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CS740 A8H
General Description: VDSS 400 V
CS740 A8H, the silicon N-channel Enhanced ID 10 A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (T C=25℃) 120 W
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CS740 A8H ○
R
ON Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
R DS(ON) Drain-to-Source On-Resistance VGS=10V,ID =5A -- 0.36 0.50 Ω
VGS(TH) Gate Threshold Voltage VDS = V GS , ID = 250µA 2.0 4.0 V
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
g fs Forward Trans conductance VDS=15V, ID =5A -- 10 -- S
C iss Input Capacitance -- 1254 --
VGS = 0V V DS = 25V
C oss Output Capacitance f = 1.0MHz -- 150 -- pF
C rss Reverse Transfer Capacitance -- 21 --
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 2 of 10 2 0 1 5 V0 1
CS740 A8H ○
R
a1
:Repetitive rating; pulse width limited by maximum junction temperature
a2
:L=10.0mH, ID=11.4A, Start T J =25℃
a3
:ISD =10A,di/dt ≤100A/us,VDD≤BV DS, Start T J=25℃
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 3 of 10 2 0 1 5 V0 1
CS740 A8H ○
R
Characteristics Curve:
100 135
120
Id,Drain Current,Amps
10 100μs 105
VGS=10V
10
Id,Drain Source,Volts
12
Id , Drain Current ,Amps
8
VGS=8V
6 8
4 VGS=7V
4
2 VGS=6V
0 0
0 25 50 75 100 125 150 0 10 20 30 40 50
Tc , Case Temperature ,C Vds,Drain Source Voltage,Volts
Figure 3 Maximum Continuous Drain Current vs Case Temperature Figure 4 Typical Output Characteristics
1
Thermal impeddance,Normalized
50%
20%
10%
0.1 PDM
5% t1
t2
2%
NOTES:
1% DUTY FACTOR :D=t1/ t2
Single pulse PEAK Tj=PDM*ZthJC*RthJC+TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
Rectangular Pulse Duration,seconds
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 4 of 10 2 0 1 5 V0 1
CS740 A8H ○
R
100
TRANSCONDUCTANCE MAY LIMIT
Idm , Peak Current , Amps
VGS=10V
1
1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00 1.00E+01
t Pulse W idth , Seconds
1.5 Tc =25 ℃
Rds(on), Drain to Source ON
ID= 11A
12
1.2 ID= 5.5A
Resistance ,Ohms
VDS=25V
ID= 2.75A
8 0.9
0.6
4
0.3
0 0
0 2 4 6 8 10 4 6 8 10 12
Vgs,Gate to source Voltage,Volts Vgs , Gate to Source Voltage,Volts
Figure 7 Typical Transfer Characteristics Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
1.2 2.5
Rds(on), Drain to Source ON
1 2 VGS=10V
Resistance,Normalized
ID=5.5A
VGS=10V
0.8 1.5
0.6 1
0.4 0.5
0.2 0
0 2 4 6 8 10 -100 -50 0 50 100 150 200
Id , Drain Current(A) Tj,Junction Temperature.C
Figure 9 Typical Drain to Source ON Resistance Figure 10 Typical Drian to Source on Resistance
vs Drain Current vs Junction Temperature
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CS740 A8H ○
R
1.4
1.08
VGS=0
ID=250μA
Normalized
1 1.03
0.8 0.98
0.6 0.93
0.4 0.88
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
Tj,Junction Temperature Tj, Junction temperature,C
Figure 11 Typical Theshold Voltage vs Junction Temperature Figure 12 Typical Breakdown Voltage vs Junction Temperature
1400 20
VGS=0V , f=1MHz
1200 Ciss=Cgs+Cgd Vgs , Gate to Source Voltage ,Volts
Coss=Cds+Cgd 16
Ciss Crss=Cgd
1000 VDS=400V
Capacitance , pF
12 ID.=11.0A
800
600 8
400
4
200
Coss
Crss 0
0
0 10 20 30
0 10 20 30 40 50 60 Qg , Total Gate Charge , nC
Vds , Drain - Source Voltage , Volts
Figure 13 Typical Capacitance vs Drain to Source Voltage Figure 14 Typical Gate Charge vs Gate to Source Voltage
12.5 100
Isd,Reverse Drain Current,Amps
10
Id , Drain Current , Amps
STARTING Tj = 25℃
10 STARTING Tj = 150℃
7.5
5 +150℃
1
+25℃
2.5 -55℃
If R=0: tAV=(L* IAS) / (1.38VDSS-VDD)
If R≠0: tAV=(L/R) In[IAS*R/ (1.38VDSS-VDD)+1]
R equals total Series resistance of Drain circuit
0 0.1
0 0.2 0.4 0.6 0.8 1 1.2 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00
Vs,Source-Drain Voltage,Volts tav,Time in Avalanche,Seconds
Figure 15 Typical Body Diode Transfer Characteristics Figure 16 Unclamped Inductive Switching Capability
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 6 of 10 2 0 1 5 V0 1
CS740 A8H ○
R
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 7 of 10 2 0 1 5 V0 1
CS740 A8H ○
R
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 8 of 10 2 0 1 5 V0 1
CS740 A8H ○
R
Package Information:
Values(mm)
Items
MIN MAX
A 10.00 10.60
B 15.0 16.0
B1 8.90 9.50
C 4.30 4.80
C1 2.30 3.10
D 1.20 1.40
E 0.70 0.90
F 0.30 0.60
G 1.17 1.37
H 3.30 3.80
L 12.7 14.7
N 2.34 2.74
Q 2.40 3.00
3.50 3.90
TO-220AB Package
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 9 of 10 2 0 1 5 V0 1
CS740 A8H ○
R
Lead Frame ○ ○ ○ ○ ○ ○
Molding Compound ○ ○ ○ ○ ○ ○
Chip ○ ○ ○ ○ ○ ○
Wire Bonding ○ ○ ○ ○ ○ ○
Solder × ○ ○ ○ ○ ○
○:means the hazardous material is under the criterion of SJ/T11363-2006.
×:means the hazardous material exceeds the criterion of SJ/T11363-2006.
Note
The plumbum element of solder exist in products presently, but within the allowed
range of Eurogroup’s RoHS.
Warnings
1. Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested
to be used under 80 percent of the maximum ratings of the device.
2. When installing the heatsink, please pay attention to the torsional moment and the smoothness
of the heatsink.
3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect
the device from being damaged by the static electricity when using it.
4. This publication is made by Huajing Microelectronics and subject to regular change without
notice.
Add: No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn HTU UTH
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