Professional Documents
Culture Documents
FORM 5
Compiled by
Cikgu Desikan
Chapter 9
Electronics
Dear students,
Look at the sky. We are not alone. The whole universe is friendly
to us and conspires only to give the best to those who dream
and work.
- Dr. Abdul Kalam
FORM 5 PHYSICS
Learning Objectives :
1. Understanding the uses of the 3. Understanding transistors
Cathode Ray Oscilloscope (C.R.O.) 4. Analysing logic gates
2. Understanding semiconductor diodes
2016
Cathode
Fluorescent
6 V a.c Screen
Cathode Ray
Oscilloscope
EHT Anode
Beam of
- + electrons
4
Cathode rays
1. Thermionic emissions can be used to produce a continuous flow of electrons in a cathode ray
tube.
2. When the cathode is connected to the anode by an extra high tension (EHT) voltage supply,
a narrow beam of fast electrons will move to the anode.
3. The beam of electrons moving from the cathode to the anode is called cathode rays.
4. Cathode rays can be used in picture tube of a television, a cathode ray oscilloscope and the
visual display on a radar screen.
5
Investigate the properties of electron streams in a Maltese cross cathode ray tube
Anode Vacuum
Cathode
Fluorescent
6 V a.c Screen
EHT Maltese
cross
- +
Observation on the
Procedure Explanation
fluorescent screen
Connect only A dark shadow of the Maltese When the 6.3 V power supply is switched on,
the 6.3 V power Cross is formed on the screen the filament is heated. The Maltese cross
supply to the shadow is formed on the screen due to the
filament light from the filament.
6
Connect the A darker shadow of the 1. When the EHT power supply is switched on, a
6.3 V and EHT Maltese Cross is seen high voltage is applied between the cathode
to the on the screen. The and anode causing electrons to accelerate at
electrodes shadow is surrounded high speeds from cathode to anode. These
by green light electrons are the cathode rays .
2. The cathode rays blocked by the Maltese Cross
causing a shadow to form on the screen. The
cathode rays travel in straight lines.
3. The green screen formed around the shadow
when the EHT power supply is switched on
shows that the kinetic energy of the electron is
converted into light energy when the electrons
hit the fluorescent screen.
Bring a pole of Two shadow are seen 1. When a strong magnet is placed at the side of
a bar magnet on the screen. The light the Maltese Cross tube, the shadow formed is
near to the shadow remains at the moved and distorted.
neck of the centre of screen while 2. This shows that cathode rays are deflected by a
tube the dark one is shifted magnetic field.
7
Investigate the properties of cathode rays in an electric field
Vacuum
Anode
Cathode
+
6 V a.c EHT 2
-
- + Plates
EHT 1
1. 2. 3.
No voltage connected to the Top plate is connected to Top plate is connected to EHT
deflecting plates EHT (+) and lower plate is (-) and lower plate is
connected to EHT (-) connected to EHT (+)
No deflection The electron beam will The electron beam will deflect
deflect upward downward
Summary of Investigation
1. Cathode rays are negatively charged.
2. It attracted towards positively charged anode.
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Cathode Ray Oscilloscope
Accelerating
Anode
- EHT
+ Vacuum Fluorescent
Screen
Cathode
Bright spot
6 V a.c
Filament
Focusing Y-plate X-plate
Control grid Anode Electron
Graphite beam
coating
a. Uses a cathode ray tube that converts electronic and electrical signals to a visual display.
b. The graph produced consist of a horizontal axis which is normally a function of time, and a
vertical axis which is a function of the input voltage.
c. The components in a cathode ray tube consists of a vacuum glass tube with
i. an electron gun,
ii. a deflection system for deflecting the electron beam and
iii. a fluorescent coated screen.
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Electron Gun
Part Function
Filament Is heated when current flows through it. It is used to heat up the
cathode.
Cathode Heated cathode emits electrons through the process of thermionic
emissions.
Control grid Control the number of electrons in the electron beams.
The more negative the grid, the fewer the electrons are emitted from the
electron gun and the less the brightness of the bright spot on the
screen.
Focusing anode To focus the electrons into a beam and to attract electrons from the area
of the control grid.
Accelerating anode To accelerate the electron beam towards the screen.
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Deflection System
1. The deflection system allows the electron beam to be deflected from its straight-line path when
it leaves the electron gun.
2. Y-plates is to move the electron beam vertically up and down the screen when an input voltage
is applied across it.
No input voltage
Electron is applied No input voltage.
Screen The electron beam does not deflect
beam
and the bright spot is at the centre
A positive voltage
is applied Bright spot +ve voltage is applied.
+V The electron beam deflect upward.
The bright spot moves to the top.
Screen
Electron
beam
A positive voltage
is applied
-ve voltage is applied.
-V The electron beam deflect
Screen
downward.
The bright spot moves to the
bottom.
Electron
beam Bright spot
Electron
beam
The function of the X-plates is to sweep the electron beam across the screen
horizontally from left to right at a steady speed. 12
Fluorescent Screen
1. The fluorescent screen is coated on the inside surface with some fluorescent material such as
phosphor or zinc sulfide.
2. When electron beam strikes the screen, the material becomes glows. This enables a bright spot
to appear whenever an electron beam strikes the screen.
3. The moving electrons have kinetic energy. When this electrons strikes the screen, the
fluorescent coating on the screen converts the kinetic energy of the electrons into light energy.
Application of CRO
13
Working principle of the cathode ray oscilloscope, CRO
Y-Gain
Time base
Control knob Function
15
Control knob Function
No input
DC power
supply
Battery
AC power suppy
17
Measuring Potential Difference using the CRO
a) b)
Ans : a) 4 V b) 4 V
18
Measuring Potential Difference using the CRO
Y-gain = 2 V/div
Height of vertical trace from zero position = 4 units
Peak ac voltage = 8 V
19
Measure short time intervals
1. The time-base is set to 1 ms/div
2. It means I div = 0.001 s
3. The number of div is counted between
two crests of a wave
4. The short time interval between pulses =
Multiplying the number of division by the
a.c d.c Y-input
time-base .
5 div
Length between 2 signals = ____
Time taken, t = 50 ms
Example 3
Diagram 3 shows a wave produced by an audio generator displayed
the screen of a CRO. The length between the two crests is 3 cm. 3 cm
(Given 1 division = 1cm)
(a) What is the period of the wave?
(b) If the time-base is set to 5 ms/div, find the frequency.
(c) When the frequency of the wave is double, what is the length
between the two crests?
Ans :
a) 15 ms
b) 66.67 Hz
c) 1.5 cm
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4.2 Semiconductor Diodes
Semiconductors in terms of resistance
Metal Insulators Semiconductors
Good conductors of Poor conductors of 1. A material that has an electrical conductivity that
electricity because electricity because is between that of a conductor and an insulator.
they have free they have too few 2. The resistance of semiconductors is between
electrons that can free electrons to that of conductors and insulators.
move easily between move about. 3. Semiconductors can be pure element such as
atoms The resistance of silicon or germanium.
The resistance of insulators is very 4. At 0 Kelvin it behaves as an insulator. When the
metals is generally high. temperature increases, the conductivity of the
very low. electricity will increase because its resistance
will be lowered.
Charge Carriers
Electricity conductivity in semiconductors occurs because there is two type of charge carriers:
Free electrons
1. _______________ which is negatively charged
2. _____________which
Holes is positively charged.
22
Characteristics of a silicon atom Valence electron
1. There are four electrons in the outermost shell of a
silicon atom and they are shared between four other
neighbouring atoms to form four covalent bonds.
2. Each of the covalent bonds has a pair of electrons.
Covalent
Every atoms shares one electron with each of its
bond
neighbours.
3. Figure on the left shows the outer electrons in a silicon
crystal which all are involved in perfect covalent bonds,
leaving no free electrons to conduct electricity.
4. At very low temperature, pure silicon crystal is an
insulator and has a high resistance to current flow.
Pure semiconductor at 0 Kelvin
5. As the temperature of pure silicon crystal increases, the energy of the vibrating atoms in the
silicon crystal causes some electrons to break free.
6. For every electron that is broken free, there is a hole in the bonding structure between the
atoms of the crystal. (atom X)
7. These holes are said to be carriers of positive charge
8. One outer electron from the neighboring atom (Y) will fill the hole and at the same time will
produce a hole at Y.
9. When the valence/outer electron moves to the left, the hole ‘move’ to the right
10. This is the physical origin of the increase in the electrical conductivity of semiconductors with
temperature
23
Hole Hole
X Y
Electron ( - )
Hole ( + )
Doping process
Doping is a process of adding a certain amount of specific impurities called dopants to a
pure semiconductor to increase its electricity conductivity.
n-type semiconductor
1. n-type doping is to produce an abundance of electrons in the semiconductor
2. A silicon atom has four valence / outer electrons which each electron is covalently bonded with
one of four adjacent silicon atoms
24
Phosphorus atom
Phosphorus
atom
3. If atoms with five valence electrons (pentavalent atoms) are doped into the pure
semiconductor, then each of the pentavalent atoms will have four covalent bonds and one extra
electrons.
4. It takes only a very small quantity of the impurity to create enough free electrons to allow
electric current to flow through silicon.
5. The free electrons are the majority carriers and the holes are the minority carriers
6. Since the pentavalent atom donates an extra electron it is therefore called the donor atom.
7. Example: phosphorus, arsenic, or antimony
25
p-type semiconductor
Electronic Structure of
Aluminium (Al)
Aluminium
(Al)
26
Comparison between the n-type and p-type semiconductor
n-type p-type
Aspect
Semiconductor Semiconductor
Valens electrons
of the dopant 5 3
material
Majority charge
Free electrons Holes
carriers
Minority charge
Holes Free electrons
carriers
27
Semiconductor diodes
1. The simplest semiconductor device is a diode. p n
2. A diode is made by joining a p-type and n-type
semiconductors Structure
3. A diode is a device that allows current to flow in one
direction only but blocks it in the opposite directions.
Anode (+) Cathode (-)
Symbol
p-n junction
1. A p-n junction is formed when a n-type and p-
type semiconductors are joined together. p n
2. The boundary between the p-type and n-type
regions is called the junction.
3. At the p-n junction, electrons from the n-side
move to the p-side and recombine with the
holes.
4. Holes from the p-side similarly move into the n-
side, where they recombine with electrons. Junction electron
5. As a result of this flow, the n-side has a net hole
positive charge, and the p-side has a net
negative charge.
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Depletion Layer
1. The region around the junction is left with p n
neither holes nor free electrons.
2. This neutral region which has no charge carriers
is called the ______________________.
depletion layer
- +
3. This layer which has no charge carrier is a poor - +
conductor of electricity.
Junction
hole electron
Forward bias Depletion layer
29
What is reversed bias?
1. The n-type is connected to the positive terminal and
the p-type is connected to the negative terminal of
Wide depletion layer
the battery.
2. The reversed polarity causes a very small current to
flow as both electrons and holes are pulled away
from the junction.
3. When the potential difference due to the widen
depletion region equals the voltage of the battery,
the current will cease. Therefore the bulb does not
light up.
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Diodes as rectifiers
1. A rectifier is an electrical device that converts alternating current to direct current.
2. Rectification is a process to convert an alternating current into a direct current by using a diode.
3. Two type of rectification:
a. Half-wave rectification
b. Full-wave rectification
Half-wave rectification
A process where only half of every cycle of an alternating current is made to flow in one
direction only.
U 31
Full-wave rectification
1. A process where both halves of every cycle of an alternating current is made to flow in the
same direction.
2. In the first half, the current flows from A to P to TU to R to B
3. In the second half, the current flows from B to S to TU to Q to A.
4. The direction of the ac current passing through the resistor for each half cycle is the same ie T
to U.
Input
ac current
T
Output
(varying dc)
P Q
A
U
B
S R
32
Use of a capacitor to smooth out output current and output voltage in a rectifier circuit
1. When the current pass through the resistor and capacitor, the capacitor is charged and stores
energy.
2. When there is no current pass through the resistor and capacitor, the capacitor discharge and
the energy from it is used to produce voltage across the resistor. As a result it produces a
smooth dc output.
Input
ac current
Circuit Diagram
T
Output ( V – t Graph )
I (A)
P Q
A
U t (s)
B
S R charged discharge
33
9.3 Transistor
1. A transistor has three leads connected to the emitter, base and
collector.
2. The emitter emits or sends charge carriers through the thin base n
layer to be collected by the collector.
3. There is two-type of transistor: npn transistor and pnp transistor. p
4. In an npn transistor the emitter sends negative electrons to the
collector. n
5. In an pnp transistor, the p-type emitter sends positive holes to the
collector.
6. In both cases, the arrow on the emitter shows the direction of
current flow. npn transistor
7. The output current, of a transistor flows between the emitter and
the collector.
8. The current in the collector lead is called collector current, IC. p
9. The base current, IB is used to control the collector current
through the transistor. The base current can be used to switch the n
collector current on or off. B
p
pnp transistor
34
Base current is too small compared to the
collector current. The unit of base current
is μA while the unit for the collector
R2 current is mA.
IC >>>> IB
IC
R1 C Emitter current, IE is equal the sum of
B E2 base current and collector current :
IE = IB + IC
E
E1 Therefore,
IB
IE > IC > IB
36
Transistor as a Current Amplifier
Current Amplification =
37
A light controlled switch
1. The LDR has a very high resistance in darkness and a low resistance in light. R is a fixed
resistor.
2. The LDR and R form a potential divider in the circuit.
Circuit switches on the light at daytime and Circuit switches on the bulb at night and
switches off the bulb at night automatically switches off the bulb at day time automatically
Z
Z
Bulb Bulb
5 kΩ
LDR 50 kΩ 50 kΩ
6V 6V
Y Y
5 kΩ
LDR
X
X
1. In daylight, the LDR has a very low 1. In daylight, the LDR has a very low
resistance as compared to R. resistance as compared to R.
38
2. Therefore the base voltage is high enough 2. Therefore the base voltage is too low to
to switch the transistor on and to light up switch the transistor on
the bulb.
3. In darkness, the LDR has a very high 3. In darkness, the LDR has a very high
resistance and therefore the base voltage is resistance and the base voltage is high to
too low to switch the transistor on. The bulb switch the transistor on to light on the bulb.
light off.
Loud speaker
40 kΩ
50 kΩ 6V
10 kΩ
Microphone
electrical
1. Microphone converts audio (sound) signal into ______________signal (varying current).
2. Capasitor allows the varying current flow it ( and prevent direct current to flow from
the battery to the transistor and the loudspeaker).
3. Base current is changed and causes large change in the collector current, IB.
4. Collector current flows in loudspeaker.
5. Sound waves with higher amplitude is produced.
41
9.4 Logic Gates
Logic gates as switching circuits in electronic systems
1. Security lamps, alarm systems, and washing machines can make some simple decisions.
2. The switching on and off operations are controlled by electronic switches made up of logic
gates.
3. Logic gates work using tiny transistors as switches. They are manufactured as integrated circuit
(IC), with each chip holding several gates.
4. A logic gate is a circuit that has one or more input signals but only one output signal.
5. For each gate, the input or inputs are on the left of the symbol. The output is on the right
6. Each input and output can be either high (logic 1) or low (logic 0).
7. A binary “0” represents 0 V, and a binary “1” represents a non zero voltage.
Truth table
A truth table lists all input possibilities and the corresponding output for each input.
Gates Truth Table Action
1 0 0
1 1 0
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