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IRF8915PbF
HEXFET® Power MOSFET
Applications
Dual SO-8 MOSFET for POL
VDSS RDS(on) max ID
converters in desktop, servers, 20V 18.3m:@VGS = 10V 8.9A
graphics cards, game consoles
and set-top box
l Lead-Free
1 8
S1 D1
2 7
G1 D1
3 6
S2 D2
Benefits
4 5
G2 D2
l Ultra-Low Gate Impedance
l Very Low RDS(on) Top View SO-8
l Fully Characterized Avalanche Voltage
and Current
Thermal Resistance
Parameter Typ. Max. Units
RθJL Junction-to-Drain Lead ––– 42 °C/W
RθJA Junction-to-Ambient f ––– 62.5
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy d ––– 15 mJ
IAR Avalanche Current c ––– 7.1 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 2.5 MOSFET symbol D
VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 7.1A, VGS = 0V e
trr Reverse Recovery Time ––– 13 19 ns TJ = 25°C, IF = 7.1A, VDD = 10V
Qrr Reverse Recovery Charge ––– 3.5 5.2 nC di/dt = 100A/µs e
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IRF8915PbF
100 100
VGS VGS
TOP 10V TOP 10V
8.0V 8.0V
5.5V 5.5V
10
ID, Drain-to-Source Current (A)
0.1
1
2.5V
2.5V
0.01
≤60µs PULSE WIDTH ≤60µs PULSE WIDTH
Tj = 25°C Tj = 150°C
0.001 0.1
0.1 1 10 100 0.1 1 10 100
V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V)
100 1.5
ID = 8.9A
RDS(on) , Drain-to-Source On Resistance
VGS = 10V
ID, Drain-to-Source Current (Α)
10
(Normalized)
T J = 150°C
1.0
T J = 25°C
1
VDS = 10V
≤60µs PULSE WIDTH
0.1 0.5
1 2 3 4 5 6 7 -60 -40 -20 0 20 40 60 80 100 120 140 160
1000 4.0
Ciss
3.0
Coss
1.0
10 0.0
1 10 100 0 1 2 3 4 5 6 7
VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC)
100.00 1000
100
TJ = 150°C
10.00
10
100µsec
T J = 25°C
1.00 1msec
1
10msec
T A = 25°C
Tj = 150°C
VGS = 0V Single Pulse
0.10 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1 10 100 1000
VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)
5
2.0
4 ID = 250µA
3
1.5
2
0 1.0
-75 -50 -25 0 25 50 75 100 125 150
25 50 75 100 125 150
T A , Ambient Temperature (°C) T J , Temperature ( °C )
Fig 9. Maximum Drain Current vs. Fig 10. Threshold Voltage vs. Temperature
Ambient Temperature
100
D = 0.50
Thermal Response ( Z thJA )
0.20
10
0.10
0.05 R1 R2 R3 R4 Ri (°C/W) τi (sec)
R1 R2 R3 R4
τJ τC 3.68799 0.000349
1 0.02 τJ τ
0.01 τ1 2.18971 0.005246
τ2 τ3 τ4
τ1 τ2 τ3 τ4 34.7298 0.470610
Ci= τi/Ri 21.8971 13.52000
Ci i/Ri
0.1 P DM
SINGLE PULSE t1
( THERMAL RESPONSE ) t2
Notes:
1. Duty factor D = t 1/ t 2
2. Peak T J = P DM x Z thJA +T A
0.01
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100
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IRF8915PbF
40
RDS(on) , Drain-to -Source On Resistance (m Ω)
60
ID
25 30
T J = 125°C
20 20
TJ = 25°C
15 10
10 0
1 2 3 4 5 6 7 8 9 10 25 50 75 100 125 150
VGS, Gate -to -Source Voltage (V) Starting T J , Junction Temperature (°C)
Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy
vs. Drain Current
Current Regulator
Same Type as D.U.T.
V(BR)DSS
15V tp 50KΩ
12V .2µF
.3µF
VDS L DRIVER
+
V
D.U.T. - DS
RG D.U.T +
- VDD
IAS A
VGS
20V
VGS
tp 0.01Ω
I AS 3mA
IG ID
Fig 14. Unclamped Inductive Test Circuit Current Sampling Resistors
and Waveform
LD Fig 15. Gate Charge Test Circuit
VDS
VDS
+ 90%
V DD -
D.U.T
10%
VGS
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
td(on) tr td(off) tf
Fig 16. Switching Time Test Circuit Fig 17. Switching Time Waveforms
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IRF8915PbF
Driver Gate Drive
P.W.
D.U.T P.W.
Period D=
Period
+
VGS=10V *
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance
D.U.T. ISD Waveform
Current Transformer
+
Reverse
Recovery Body Diode Forward
-
+ Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
Ripple ≤ 5% ISD
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
Vgs(th)
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IRF8915PbF
Power MOSFET Selection for Non-Isolated DC/DC Converters
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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRF8915PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 ) FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.59mH, RG = 25Ω, IAS = 7.1A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
Rθ is measured at TJ of approximately 90°C.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/2008
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