Substrate selection for high-temperature superconducting thin films

Julia M. Phillips

Citation: Journal of Applied Physics 79, 1829 (1996); doi: 10.1063/1.362675

View online: https://doi.org/10.1063/1.362675
View Table of Contents: http://aip.scitation.org/toc/jap/79/4
Published by the American Institute of Physics

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APPLIED PHYSICS REVIEWS

Substrate selection for high-temperature superconducting thin films

Julia M. Phillipsa)
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
~Received 1 August 1995; accepted for publication 30 October 1995!
Substrate selection presents particular challenges for the production of high-quality
high-temperature superconducting ~HTS! thin films suitable for applications. Because the substrate
is generally a passive component, it is often ignored and assumed to have a negligible effect on the
structure residing on top of it. There is also a technological motivation to use substrates that
conventional wisdom would argue are unlikely to support high-quality HTS films. These facts have
led to rediscovery of many of the fundamental issues governing the role of the substrate in
determining the properties of the thin film~s! it supports. For this reason, the study of issues in
substrate selection for HTS materials presents a microcosm for substrate selection more generally.
We consider the major issues governing the role of the substrate in HTS thin-film technology and
discuss many of the material classes and specific materials that have been studied for their suitability
as substrates for HTS films. © 1996 American Institute of Physics. @S0021-8979~96!06004-8#

TABLE OF CONTENTS HTS compounds present a particularly challenging set of

I. Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
II. Issues in substrate selection. . . . . . . . . . . . . . . . . . .
A. Overview. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B. Global issues. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C. Issues for epitaxial films. . . . . . . . . . . . . . . . . . .
D. Issues for applications. . . . . . . . . . . . . . . . . . . . .
III. Substate materials. . . . . . . . . . . . . . . . . . . . . . . . . . .
A. Overview. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B. Perovskite-structure oxides. . . . . . . . . . . . . . . . .
C. Non-perovskite-structure oxides. . . . . . . . . . . . .
D. Semiconductors. . . . . . . . . . . . . . . . . . . . . . . . . . .
E. Metals. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
F. Other materials. . . . . . . . . . . . . . . . . . . . . . . . . . .
IV. Summary. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I. INTRODUCTION
Soon after the discovery of high-temperature supercon-
ductivity ~HTS! above liquid-nitrogen temperature,1–3 the
first reports emerged of the growth of the new materials in
thin-film form.4 Thin-film research has been motivated by
two tantalizing possibilities. One is the potential of HTS thin
films to give insight into the fundamental mechanisms gov-
erning HTS.5 The other involves the various applications that
high-quality thin films might enable, including low-loss mi-
crowave cavities and filters, bolometers, various supercon-
ducting two- and three-terminal devices, flux transformers,
and dc and rf superconducting quantum interference devices
~SQUIDs!.6 There is also need for HTS interconnects to wire
together the various active devices.7
a!
Present address: Sandia National Laboratories, Albuquerque, NM 87185-
1411; Electronic mail: jmphill@sandia.gov
properties that make the realization of high-quality, repro-
1829 ducible thin films potentially problematic. They are a chal-
1830 lenge to grow under even the most ideal circumstances. A
1830 major contributor to the difficulties that arise is the sheer
1830 complexity of the materials. All of the HTS compounds are
1832 composed of a minimum of four elements that must be de-
1834 posited within close tolerance of the correct ratio in order to
1836 obtain optimized films. Most of the elements are highly re-
1836 active, leading to the potential for unwanted chemical reac-
1836 tions that lead to deviations from chemical purity in the
1840 films. Each HTS material contains oxygen, an element that is
1844 incompatible with many aspects of traditional thin-film
1844 growth methods, especially the substrate heating necessary
1845 for producing films that are superconducting upon removal
1846 from the growth chamber as well as hot filaments for evapo-
rators. The role of oxygen is also critical in determining the
properties of various film imperfections such as grain bound-
aries. The crystal structure of the materials is highly aniso-
tropic, as are the resultant electrical and superconducting
properties, meaning that crystallographic alignment in the
films is critical.
All of these considerations make the structural quality of
a HTS film critical for obtaining the desired properties in a
reproducible manner. This has meant that many of the prob-
lems that have plagued thin film growers in other materials
systems have also been encountered in HTS, exacerbated by
the special materials properties of the HTS materials that
present their own challenges.
One of the issues that presents particular challenges in
the case of HTS materials is the substrate. Because the sub-
strate is generally a passive component of the entire struc-
ture, there is a strong tendency to ignore it and to assume that
its role in the properties of the desired structure grown on top
of it is nonexistent or at worst minimal. There is also a tech-
nological motivation to use substrates that conventional wis-

J. Appl. Phys. 79 (4), 15 February 1996 0021-8979/96/79(4)/1829/20/$10.00 © 1996 American Institute of Physics 1829
TABLE I. Global issues in substrate selection.

ISSUE

Chemical Thermal exp. Surface Substrate Substrate Substrate Buffer

EFFECT compatibility match quality cleanliness homogeneity therm. stability layers

Max. processing 3 3 3 3
temperature
Reacted layer 3 3 3
at interface
Impurity in film 3 3 3
Impurity in 3 3
substrate
Film adhesion 3 3 3 3
Film buckling/ 3 3
cracking
Film 3 3 3 3 3
microstructure
Film 3 3
composition
Film 3 3 3 3 3
morphology
Film 3 3 3 3 3
uniformity
Superconducting 3 3 3 3 3 3 3
properties

dom would argue are unlikely to support high-quality HTS
films. These facts have led to rediscovery of many of the
fundamental issues governing the role of the substrate in
determining the properties of the thin film~s! it supports. In
some sense, the study of issues in substrate selection for HTS
materials presents a microcosm for substrate selection more
generally, with most of the important issues having been re-
discovered and/or elucidated in various papers over the last
10 years.
As will become obvious, the ideal substrate for HTS
films does not exist. Specific applications require different
substrate materials which offer an acceptable compromise
for the purpose at hand. Ideally, the substrate should provide
only mechanical support but not interact with the film except
for sufficient adhesion, and in many cases the provision of a
template for atomic ordering. In practice, however, the sub-
strate exerts considerable influence on film characteristics.
The search for viable substrate materials is an active area of
research. It is fair to say that significant breakthroughs are
required to identify materials that satisfy all of the require-
ments that HTS films pose. This review considers the major
issues governing the role of the substrate in HTS thin-film
technology and discusses many of the material classes and
specific materials that have been studied for their suitability
as substrates for HTS films.
II. ISSUES IN SUBSTRATE SELECTION
A. Overview
The importance of substrate selection in dictating all as-
pects of film growth from ease or even feasibility of growth
to film quality cannot be overemphasized. In some materials
systems, including HTS, the best films that can currently be
produced are grown on materials that have serious limita-
tions. The search for viable substrate materials is an active
area of research that often accompanies the investigation and
perfection of a film. Significant breakthroughs are required to
identify and produce materials that satisfy all of the require-
ments that HTS films and many of their applications pose.
The quest for substrate materials that are capable of support-
ing excellent films of HTS materials has been in progress for
nearly as long as HTS thin films have been prepared. The list
of desirable substrate properties contains a number of entries
that are common to good substrates for essentially all classes
of thin films. Some substrate requirements are independent
of the details of the film they must support. These global
requirements are discussed in Sec. II B. In many cases it is
desirable or even necessary for a film to be not only crystal-
line, often single crystalline, but also for the crystallographic
axes of the film to have well-defined orientations with re-
spect to the substrate. This usually requires that the film be
epitaxial on its substrate, a constraint that introduces addi-
tional requirements that must be fulfilled by the substrate
material. These requirements are discussed in Sec. II C. Fi-
nally, the use of films for particular applications introduces
its own constraints; these are discussed in Sec. II D.
B. Global issues
A number of issues are critical in substrate selection for
thin-film growth, regardless of the details of the film to be
produced. These are listed in Table I, together with the ma-
terials properties they affect. Each entry is discussed in more
detail in the rest of this section.
Chemical compatibility: One of the first issues that must
be dealt with in determining the suitability of a substrate for
a HTS film is the chemical compatibility of the two materi-
als. This is true whether or not the film is epitaxial. Ideally,
there should not be any chemical reactions between the film
and substrate. The constraint is especially severe for HTS

1830 J. Appl. Phys., Vol. 79, No. 4, 15 February 1996 Appl. Phys. Rev.: Julia M. Phillips
films since these materials are reactive with many substrates
that might otherwise be good candidates ~such as unbuffered
Si!.8,9 The relatively high temperatures required for growing
even in situ films, or films that are superconducting upon
removal from the growth chamber ~>700 °C!10 make the
compatibility requirement more critical than it would be if
high-quality films could be grown at lower temperature. The
higher the temperature, the more stringent the requirements
for chemical inertness. In the case of ex situ films, or films
that require an anneal external to the growth apparatus in
order to become superconducting, the problem is even
worse, since the maximum temperature that the film/
substrate couple must withstand is usually ;850 °C.11 The
BaF2 process, which involves formation of YBa2Cu3O7
~YBCO! films by deposition of Y, BaF2 , and Cu at low tem-
perature followed by a high-temperature ex situ anneal in wet
oxygen to hydrolyze the BaF2 is especially demanding, since
the substrate must not be sensitive to water vapor at high
temperature, in addition to the other requirements already
discussed.11
Regardless of the specific film growth method used, the
substrate must be unreactive in the oxygen-rich ambient re-
quired for growth and processing. These considerations re-
quire close examination of the composition of substrate ma-
terials and their possible chemical reactions. In general, one
is likely to encounter fewer problems with chemical compat-
ibility if the film and substrate are composed of chemically
similar species. For example, oxide substrates are more
likely to tolerate the growth of HTS materials than are non-
oxide materials.
Thermal-expansion match: Most combinations of sub-
strates and films will be more or less mismatched in regard to
thermal expansion. This may result in loss of adhesion or
film cracking during thermal cycling.
A good thermal-expansion match is necessary, whether
or not one is dealing with an epitaxial system. In the case of
HTS materials, this requirement is particularly important be-
cause of the brittleness of the superconductor. Thus, YBCO
films on bulk Si substrates, even with a buffer layer of, say
yttria-stabilized zirconia ~YSZ!, develop cracks if they are
over 50 nm thick, due to the large difference between the
coefficients of thermal expansion of Si and YBCO.12 Films
on YSZ/Si layers on bulk sapphire do not have this problem
as severely since sapphire has a thermal-expansion coeffi-
cient that is much more similar to that of YBCO, and it is
this value that dominates the system. Nevertheless, there is
even a limit to the thickness of YBCO films that can be
grown on sapphire due to the thermal-expansion mismatch.13
This ‘‘critical thickness’’ is, however, about one order of
magnitude higher than in the case of a Si substrate.
The existence of a nonzero thermal-expansion mismatch,
which is the rule rather than the exception, can have many
effects on the film. The severity of the problem depends on
several properties of the layer. For example, if the film ma-
terial is very brittle, cracking is likely if the mismatch is
severe. This is especially true if the film is in tension, i.e., if
the thermal expansion of the film exceeds that of the sub-
strate. The effect of thermal mismatch on a film may depend
on film thickness. For example, a thin film may ‘‘conform’’
J. Appl. Phys., Vol. 79, No. 4, 15 February 1996
to the thermal-expansion properties of the substrate and
therefore be under stress, whereas a thicker film may crack.
Problems introduced by thermal-expansion mismatch are
more severe if the system must tolerate extreme tempera-
tures, whether it be during film growth, processing, or the
life of the finished product. Especially in the case of crystal-
line films ~and most particularly for epitaxial ones!, a
thermal-expansion mismatch may cause the film properties
themselves to be altered from what they would be if the
mismatch were absent. For example, the lattice parameters of
a film may be altered from their equilibrium values by be-
coming ‘‘locked in’’ to those of the substrate at an elevated
growth temperature. This deviation from the equilibrium
crystal structure may modify some film properties, for ex-
ample introducing anisotropy into a usually cubic material or
otherwise modifying the electrical properties.
Surface quality: The quality of the surface is one of the
most important properties of a substrate since it is here that
the film–substrate interaction occurs. A uniform surface is
necessary ~although not sufficient! to insure a uniform, ho-
mogeneous film. If the surface is reactive with the film to be
deposited, it must be passivated in a reproducible and uni-
form manner. Various types of irregularities make up the
overall surface texture. The following categories of surface
defects may be encountered:
~1! on the atomic scale: point defects, dislocation lines,
monatomic ledges on cleavage planes, twin boundaries;
~2! submicron features: polishing scratches, pores due to
less than theoretical density of the substrate, impurity
phases;
~3! micron scale: grinding scratches, crystalline boundaries
in polycrystalline materials, pores;
~4! macrodefects: surface warp, cracks.
Surface smoothness is important for a number of rea-
sons. If a complex heterostructure involving a series of thin
films is to be fabricated, it is necessary that each layer be of
uniform thickness so that the properties of the structure are
reproducible and predictable. Asperities on a surface may
have a significant impact on film nucleation, and the mor-
phology and structure of the resulting film may be affected.
In some cases, scratches or crystallographic steps may influ-
ence the orientation of a crystalline film as well as its overall
microstructure.
The impact of surface morphology has been especially
well illustrated in the case of YBCO film growth on YSZ
substrates.14 The in-plane orientation of the films on smooth
surfaces, as observed by atomic force microscopy ~AFM!,
was found to be sensitive to the deposition conditions, often
resulting in mixed orientations. At sufficiently high growth
temperature, however, only a single orientation was ob-
tained. Films on substrates with surface steps, resulting from
the deposition of a homoepitaxial buffer layer or from sub-
strate annealing, had a different orientation at the same depo-
sition temperature due to a graphoepitaxial mechanism. The
density of substrate steps was also observed to affect the
c-axis lattice parameter, probably due to atomic scale disor-
der in the growing film resulting from a low density of ad-
sorption sites.
Appl. Phys. Rev.: Julia M. Phillips 1831
 A related result has been documented in the case of
YBCO film growth on MgO.15 The largest population of
misoriented grains and poorest overall crystallinity was
found in films grown on the substrates that were the most
featureless on an atomic scale. The best structural and super-
conducting properties resulted from growth on substrates an-
nealed to yield a high density of atomic steps.
An ideal substrate would have a flat, dense surface and
be free of twins and other structural inhomogeneities, al-
though a number of materials in current use as HTS sub-
strates do have such problems.8 LaGaO3 in particular has
been observed by optical microscopy to undergo surface
roughening at its phase transition at 140 °C,16,17 which has
serious implications for the integrity of HTS films deposited
on this material. It would be desirable, at the very least, to
grow films on a substrate that has no phase transitions within
the temperature regime required for film processing. In the
case of microwave applications, where the dielectric proper-
ties of the substrate have an important effect on device per-
formance, the existence of a twinning transition in the pro-
cessing range is entirely unacceptable, since it precludes
device modeling.18
Substrate cleanliness: The cleanliness of the substrate
surface exerts a decisive influence on film growth and adhe-
sion. A thoroughly cleaned substrate is a prerequisite for the
preparation of films with reproducible properties. The choice
of cleaning techniques depends on the nature of the sub-
strate, the type of contaminants, and the degree of cleanliness
required. Residues from manufacturing and packaging, lint,
fingerprints, oil, and airborne particulate matter are examples
of frequently encountered contaminants. Accordingly, it is
necessary to address the questions of contaminant identifica-
tion and effective removal. Suitable answers can seldom be
derived from general principles but usually require an em-
pirical approach.
Rather little work has been done to study the effect of
surface cleanliness on HTS film quality. There have been
studies of the effect of various chemical, mechanical, and
thermal treatments of the substrate on film microstructure
and morphology, but these have primarily addressed the ef-
fect of surface morphology on the film structure and super-
conducting properties and not the cleanliness issue.15 The
general protocol for substrate cleaning prior to HTS film
growth seems to be degreasing in organic solvents, possibly
followed by an anneal ~generally in oxygen if the substrate is
an oxide!. This is an issue that clearly needs further attention
as HTS film growth studies progress.
Substrate homogeneity: While issues in the surface qual-
ity of the substrate have already been dealt with, the quality
of the bulk of the substrate must also be reasonable. For
example, if a substrate is predominantly a single phase but
contains an appreciable amount of one or more additional
phases, the surface quality is likely to suffer, and the film
may not grow equally well on all of the phases present.
Grain boundaries in the substrate that appear on the surface
may affect the microstructure and morphology of the film.
The substrate should have the theoretical density of its con-
stituent, since voids will affect the quality of the growth
surface. Precipitates, dislocations, etc., throughout the bulk
1832 J. Appl. Phys., Vol. 79, No. 4, 15 February 1996
of the substrate may also affect the quality of the surface,
especially if the density is high. These are often nucleation
sites for defects in the film. Twin boundaries which propa-
gate throughout the substrate are likewise potential nucle-
ation sites for competing crystalline orientations in the film
and may have other undesirable defects as well.
Substrate thermodynamic stability: The chemical stabil-
ity of the substrate was discussed above, but it is also highly
desirable that the substrate be thermodynamically stable
within the temperature range required to grow and process
the thin film. A phase transition within this region can have
dramatic effects on the surface quality of the substrate and on
the stresses the film must undergo, even if the chemistry is
not a problem. If a phase transition is inevitable, it should be
as minor as possible, i.e., second order with no discontinuous
volume change and minimal structural change.
Buffer layers: Buffer layers have been used extensively
in the study of HTS films. These are films that are grown
directly on the substrate in order to alleviate some of the
shortcomings that a substrate may have. The most common
reason to use a buffer layer is to avoid unwanted reactions
between film and substrate. Obviously, the buffer layer must
be chemically compatible with both materials. Some reaction
between the buffer layer and substrate may be permissible if
it is confined to a region near the interface.
Buffer layers may serve other purposes, as well. If the
thermal-expansion mismatch between the HTS layer and
substrate is large, a buffer layer with intermediate thermal
properties may alleviate cracking of the film. Choosing a
buffer material with a lattice constant intermediate between
the two materials may improve the epitaxial quality of the
grown layer. In some cases, the buffer layer may even
change the epitaxial orientation of the HTS film, so that grain
boundaries can be engineered into the layer.19
Major progress has recently been reported in the use of
buffer layers for the growth of highly crystallographically
textured HTS films.20 The buffer layer texture is induced
using ion-beam-assisted deposition ~IBAD!, which estab-
lishes orientation in the buffer layer ~typically YSZ! by in-
ducing alignment of the most open crystallographic axis
@~111! in the case of YSZ# with the incident ion beam ~typi-
cally Ar with incident energy of tens to a few hundred eV!.
This development has the potential to expand greatly the set
of substrate materials that can be considered for HTS film
growth.
C. Issues for epitaxial films
The best HTS films grown to date, as determined by a
multitude of metrics including critical current density, mor-
phology, and stability over time, are epitaxial on their sub-
strates. The crystal structures of YBCO, Bi2Sr2CaCu2O8
~BSCCO!, and Tl2Ba2Ca2Cu3O10 ~TBCCO! are shown in
Fig. 1. Epitaxial growth requires the controlled crystallo-
graphic orientation of the film with respect to the substrate.
In general, this necessitates matching the film and substrate
with respect to lattice parameters, atomic positions, crystal-
lographic orientation, etc. The better the match of all of these
parameters, the more likely high-quality epitaxial growth is
Appl. Phys. Rev.: Julia M. Phillips

to occur. These additional requirements on the material are
listed in Table II and are discussed in this subsection.
Lattice match: The first requirement that is generally
considered in selecting a substrate for epitaxial growth is its
lattice match with the film. Historically, the first studies of
TABLE II. Issues in substrate selection for epitaxial films.
J. Appl. Phys., Vol. 79, No. 4, 15 February 1996
FIG. 1. Crystal structures of the most common HTS film materials: ~a!
YBa2Cu3O7 ; ~b! Bi2Sr2CaCu2O8 ; ~c! Tl2Ba2Ca2Cu3O10 .
epitaxial growth, frequently involving material on NaCl or
some other substrate very different chemically and structur-
ally from the film to be grown, indicated that a lattice mis-
match of less than 15% was required for there to be a pos-
sibility of epitaxy.21 As the field of epitaxial growth
Appl. Phys. Rev.: Julia M. Phillips 1833
concentrated on semiconductor systems, in which the chem-
istry of the film and substrate are very similar, it became
apparent that vanishingly small lattice mismatches were de-
sirable to minimize the effects of dislocations and other de-
fects brought about by lattice dissimilarities.22–24 More re-
cently, there have been attempts to combine materials with
larger lattice mismatches ~several percent or higher!. In the
case of semiconductors, this has led to rediscovery of many
of the defects that had been minimized or avoided by small
mismatch. In the case of HTS materials, the issue is more
open. In general, it seems desirable to minimize the lattice
mismatch as much as possible. This seems to improve the
ability to obtain singly oriented films. Still, as is discussed at
length later, several substrates with significant lattice
matches have been used with considerable success, although
the large lattice mismatch contributes to doubt regarding
their ability to support films of sufficient quality for some
applications.
Coincidence sites: In general, it is not enough simply to
require that there be a close lattice match between the film
and substrate. There must also be a reasonable number of
coincidence sites between the two lattices. These are atomic
positions ~preferably with the same or similar atomic sizes
and valences! that coincide on either side of the interface.
Frequently, although not always, this means that the film and
substrate should have similar crystal structures ~e.g., perov-
skite!. The higher the number of coincidence sites, the better
the chance of good epitaxy.
Similarity in structure is probably as important a crite-
rion in determining a suitable HTS epitaxial substrate as is
lattice match, although they are not independent.25 By ana-
lyzing a variety of substrate structures, it has been shown in
Ref. 25 that it is the similarity in interatomic structure, in-
cluding ionic distributions and distances, that is the primary
consideration for substrate selection. The surface termination
of the substrate is also a crucial parameter in determining the
quality of oriented or epitaxial growth. It is argued that with
this understanding, the range of potential HTS substrates can
be broadened substantially over what has been considered to
date. It must be remembered, however, that some of the other
issues already discussed, such as chemical compatibility,
must be considered simultaneously.
When the substrate crystal is of higher symmetry than
the crystal of the overgrown film, a finite number of differ-
ently oriented island nuclei develop, which leads to a finite
number of discrete epitaxial orientations within the film.26
This ‘‘degenerate epitaxy’’ is observed in the triple position-
ing of tetragonal YBCO on lattice-matched cubic SrTiO3
with 90° grain boundaries separating the different orienta-
tions. The in situ growth of YBCO films on MgO~001! is a
good example of ‘‘coincidence epitaxy,’’ where the lattice
misfit is large. Differently oriented island nuclei form to
minimize interfacial energy by maximizing the lattice coin-
cidence and minimizing the misfit and strain energy across
the film–substrate interface. These examples serve to empha-
size the importance of matching as many parameters of the
film and substrate as possible, including lattice match, coin-
cidence sites, and crystallographic symmetry.
1834 J. Appl. Phys., Vol. 79, No. 4, 15 February 1996
Surface quality: The importance of surface properties in
determining the quality of a film grown on it was discussed
in Sec. II B. It needs to be emphasized that this parameter is
even more critical for epitaxial growth. Misoriented grains
frequently nucleate on irregularities on a surface, be they
dirt, surface defects, or atomic steps due to substrate miscut
or other treatment. In some cases, the presence of atomic
steps can actually be useful in nucleating a particular epitax-
ial orientation preferentially over another orientation that oc-
curs on surfaces that do not have steps.14 The quality of a
substrate surface can be affected by a number of treatments
including cleaving, polishing of various sorts ~chemical
and/or mechanical!, and annealing in a variety of ambients.15
Slight misorientations of the substrate can have a profound
effect on the epitaxial quality. For example, in the case of
MgO, the mosaic spread of a YBCO film has been found to
increase dramatically even at a vicinal angle as small as 1°.27
Structural quality: The structural quality of the substrate
is even more important when epitaxial films are required
than when they are not. It goes without saying that a single-
crystal film is possible essentially only when the substrate
itself is single crystalline. Impurity phase inclusions in the
substrate very likely will affect the surface quality and ulti-
mately the epitaxial quality as well. Twins in the substrate in
many cases will affect the degree of orientation possible in
the film. In general the crystalline quality of the film will be
no greater than that of the substrate.
D. Issues for applications
In developing a list of materials requirements for sub-
strates for HTS films, it is first useful to enumerate some of
the actual device applications of HTS layers that are contem-
plated. Each of these potential applications poses its own
requirements for the substrates as listed in Table III and dis-
cussed below.
All-superconducting devices: The first application of su-
perconductors to electronics is for all superconducting de-
vices. Nearly all such devices that have been demonstrated to
date involve some sort of Josephson junction, or region of
restricted current flow.28,29 Possible means of accomplishing
this include lithographic patterning of a single superconduct-
ing film, incorporation of a grain boundary into a single film,
or use of a thin layer of metal or insulator between two
superconducting regions, through which superconducting
electrons can pass. The substrate must be able to support
HTS films of adequate quality for reproducible junction fab-
rication. Grain boundaries must exist only where desired, as
in the grain-boundary junction. The grain-boundary junction
requires either processing of the substrate before HTS film
growth or the production of a bicrystal substrate.
A more recent all-superconducting device that has re-
ceived attention from high-frequency circuit designers deal-
ing with HTS is the superconducting flux-flow transistor
~SFFT!.30 In this device a region of a single superconducting
film is thinned and perforated selectively, resulting in a re-
duced film cross section between the source and drain of the
device. The major requirement for the substrate, aside from
the obvious necessity that it support a device-quality HTS
Appl. Phys. Rev.: Julia M. Phillips
TABLE III. Issues in substrate selection for applications.
Hybrid HTS– Integrated HTS
SUBSTRATE All HTS semiconductor and semiconductor
REQUIREMENT devices devices
Support high- 3 3
quality films
Control grain 3 3
boundaries
Low dielectric varies
loss
Device-quality 3 3
semiconductor
layer
Low e
Large area
Isotropic
Low surface
resistance films
High-J c films
film, comes from the fact that this device is intended for
high-frequency operation. This requires that the substrate
have low dielectric losses.
Hybrid superconductor–semiconductor applications:
Hybrid superconductor–semiconductor devices and systems
have been contemplated for many years. Typically, three lev-
els of hybridization are discussed:
~1! combining superconductor and semiconductor in a single
device;
~2! combining individual superconductor devices with semi-
conductor devices in an integrated circuit; and
~3! combining superconducting circuits and semiconducting
circuits or chips into a complete system.31
An example of a single device using both superconduct-
ing and semiconducting materials is the semiconductor-
coupled Josephson junction, in which the semiconductor acts
as the weak link for tunneling between two superconducting
regions.32 In this device, the substrate must either be a semi-
conductor ~capable of supporting device-quality HTS mate-
rial at the interface! or be a material that can support both
device-quality semiconducting and HTS layers.
The combination of superconducting devices with semi-
conducting ones in an integrated circuit requires, at least for
the present, the operation of the semiconducting devices at
77 K or below. If one is to fabricate integrated circuits using
active superconductor and semiconductor, one will require
device-quality layers of both superconductors and semicon-
ductors to be combined on a single substrate that is compat-
ible with both.
At the system level, the greatest interest in combining
superconductors with semiconducting circuits has been on
superconducting interconnects, which can increase both
bandwidth and wiring density.31 In the various analyses that
have been performed, the level at which HTS interconnects
may become interesting is among gate-level circuits. Once
J. Appl. Phys., Vol. 79, No. 4, 15 February 1996
APPLICATION
Microwave Current-carrying
devices Interconnects applications applications
3 3 3 3
3
3 3 3
3
3 3
3 3 3 3
3
3
3 3
again, substrates must be able to support not only the inter-
connects but also at least some of the semiconductor circuits.
They must be low loss and compatible with both classes of
electronic material. Because of the high speeds involved, the
dielectric constant of the substrate must be as low as pos-
sible. In order to have an impact on the electronics industry,
large-area substrates are required.
Microwave applications: Microwave-frequency devices
such as filters and delay lines have been targeted by many as
potential niches for HTS devices.33 In this regime, supercon-
ductors offer a number of potential advantages such as dy-
namic range and bandwidth. The large area occupied by
many of these devices introduces the need for large-area sub-
strates. Operation at microwave frequencies imposes the
need for low substrate loss. Since the dielectric properties of
the substrate have an important effect on device perfor-
mance, the existence of a twinning transition in the process-
ing range is entirely unacceptable, since it precludes device
modeling.18
Microwave device applications impose a number of
other property requirements on the HTS substrate material.
Microwave applications are not generally very sensitive to
the dielectric constant of the substrate ~as long as it is uni-
form and, preferably, isotropic for modeling convenience!,
but they do depend on having a low value of the loss tangent.
This precludes the use of materials that contain magnetic
ions, such as most of the rare earths.
Current-carrying applications: In some cases, supercon-
ducting films are desired strictly for their ability to carry
large amounts of current with no loss. In such applications, a
metal substrate is generally preferred, since it serves as an
alternate-current path in the case of warming of the super-
conductor or other problem. In addition to being a metal,
substrates for these applications need to be able to support
superconducting films that have a high critical current den-
sity and that probably are quite thick.
Appl. Phys. Rev.: Julia M. Phillips 1835
III. SUBSTRATE MATERIALS
A. Overview
Many materials have been tried as substrates for HTS
films, but most have met with limited success. In general, the
search for substrates that can support the growth of high-
quality HTS films has centered on materials having the per-
ovskite crystal structure, usually oxides.25 Most of the other
materials that have been studied extensively and/or met with
some success have fallen into one of the following catego-
ries:
~1! oxides with a crystal structure that is not based on the
perovskite cell;
~2! semiconductors;
~3! metals.
Only a few substrates do not fall into one of these categories.

B. Perovskite-structure oxides
The most studied and most successful substrates for HTS
materials to date are nearly all oxides with the perovskite
crystal structure. This arises quite naturally, since the crystal
structures of the HTS compounds are closely related to the
perovskite structure, giving a large number of coincidence
sites as shown in Fig. 2. The lattice constants also tend to be
quite similar. Finally, since these substrate materials are
themselves oxides, the chemical compatibility between them
and the HTS materials tends to be good. Some of the funda-
mental properties of these materials are discussed in Refs. 8
and 34 –37. The properties most relevant to the growth of
HTS films are listed in Table IV. The lattice mismatches
indicated are with YBCO.
SrTiO3 saw early success as a substrate material,4 which
is not surprising in view of its rather small lattice mismatch
with YBCO ~its lattice constant is a50.3905 nm! and its
ready availability. The prohibitively large dielectric constant
of this material ~e5277 at room temperature!, coupled with FIG. 2. ~a! The perovskite crystal structure, shown here for SrTiO3 . ~b! The
its unavailability in reasonable sizes, has spurred the search crystal structure of YBa2Cu3O7 . It is obvious that the two structures are
for alternatives. Still, SrTiO3 is able to support high-quality closely related, making epitaxial growth likely. The chemical compatibility
YBCO films with state-of-the-art properties, i.e., T c ;90 K between perovskite structure oxides and the HTS materials tends to be good.
Some of the fundamental properties of these materials are discussed in Refs.
and J c ~77 K!;53106 A/cm2 ~e.g., see Ref. 38!. Representa- 8 and 22–37. The properties most relevant to the growth of HTS films are
tive data for YBCO film resistivity as a function of tempera- listed in Table IV. The lattice mismatches indicated are with YBCO.
ture are shown in Fig. 3. Critical current density data are
plotted in Fig. 4.
The situation is not so clear for Biv Srw Cax Cuy Oz sputtering.41 The films consisted largely of the ~1201! phase
~BSCCO!. Liquid-phase-epitaxial ~LPE! films of the ~2212! with the c axis perpendicular to the plane of the film. T c 585
phase have T c 575 K ~see Fig. 5! and, as shown in Fig. 6, K; J c ~50 K!513103 A/cm2; J c ~5 K!513104 A/cm2. The
J c 533104 A/cm2 3° below the T c .39 Tlv Baw Cax Cuy Oz room-temperature resistivity of these films is a high 20–100
~TBCCO! ~2212! films on SrTiO3 have also been studied.40 mV cm.
The lattice mismatch in this case is 1.28%. In spite of the LaGaO3 was identified as a potential substrate material
rather small lattice mismatch, the film is not epitaxial; the c rather early.42 Its lattice matches and thermal-expansion
axis is predominantly perpendicular to the film surface, but match with HTS materials are quite good ~the lattice con-
the a axes are not aligned in the plane of the film. There is a stants are a50.5519 nm, b50.5494 nm, and c50.7770 nm!,
large amount of second-phase material in the film, as well as and its dielectric constant at room temperature is smaller
evidence for strong film–substrate reactions, with Sr and Ti than that of SrTiO3 by one order of magnitude ~e525!. The
present in the HTS film itself. The superconducting transition crystal structure is shown in Fig. 8. It is possible to grow
is at about 100 K ~see Fig. 7!, but there is an indication of LaGaO3 crystals by the Czochralski technique, so that large-
two transitions. The only report of Hgv Baw Cax Cuy Oz films area substrates are available, although demand for this mate-
involves their growth on SrTiO3 substrates by rf magnetron rial has been largely supplanted by that for more desirable

1836 J. Appl. Phys., Vol. 79, No. 4, 15 February 1996 Appl. Phys. Rev.: Julia M. Phillips
 TABLE IV. Properties of perovskite substrates for HTS materials.

Da/a Db/b Dc/c CTE Phase mp

~%! ~%! ~%! ~ppm! e36 tan d36 transf. ~K! ~K!

SrTiO3 12.0 10.7 10.1 10.4 277a 631022 110b 2353

~100 K, 300 GHz!
LaGaO3 11.5 10.7 20.5 10.3 25 631023 420c 2023
~100 K, 500 GHz!
LaAlO3 20.9 22.2 23.0 11 23 331025 800b 2453
~77 K, 5 GHz!
NdGaO3 10.3 10.3 21.3 8.0 20 331024 .1300 1873
~77 K, 5 GHz!
NdAlO3 12.2 14.0 14.4 17 1820b 2363
YAlO3 24.5 25.4 24.0 5–10 16 131025 .1573 2148
~77 K, 10 GHz!
PrGaO3 20.9 20.2 10.8 7– 8 24 3.631024 .1300
~300 K, 1 kHz!
KTaO3 24.2 22.9 22.2 6.8 1630
YbFeO3 11.0 20.3 10.5 4 –5 yes
Sr2AlTaO6 11.7 20.1 0.0 9.0 23–30 431024
~100 K, 10 kHz!
GdBa2NbO6 210 28.8 28.0
a
Room-temperature values.
b
Second-order phase transformation.
c
First-order phase transformation.

substrates. There were early reports of the growth of high-
quality films on this substrate, with high T c ~;90 K for
YBCO! and J c ~2.33106 A/cm2 at 77 K for YBCO!.38
LaGaO3 has one serious drawback, however, namely its first-
order phase transition at 420 K,8 well within the processing
region for HTS films grown by any technique. This transition
gives rise to steps on the surface of the substrate, which can
be particularly detrimental in the case of very thin or pat-
terned films.17 YBCO films grown by the BaF2 process are
not as good as those grown on other substrates,43 possibly
due to chemical reactions at the high temperatures required
to grow the best films by this technique.
BSCCO ~2212!,39 and TBCCO ~2212!,40 films have also
been grown on LaGaO3 , although the results have not been
quite as good as on some other materials. BSCCO films
grown by LPE show three peaks in the rocking curve, pre-
sumably arising from the twinning transition in the
substrate.39 The T c of these films is about 70 K, and J c ~4.2
K!533104 A/cm2 as shown in Fig. 6. The T c of TBCCO
~2212! film is as high as 99 K in a two-step growth process.40
The films are predominantly c-axis oriented, but there is
some a-axis materials as well. Cracks in the films have been
attributed to the phase change in the substrate during film
processing. There is no evidence of chemical interaction with
the substrate.
LaAlO3 also offers small lattice and thermal mismatches
with HTS materials.44 The pseudocubic lattice constant is
0.5377 nm. The dielectric constant is 24, and tan d

FIG. 3. Resistivity as a function of temperature for a YBCO film grown on FIG. 4. log J c (t) vs log~12t! for YBCO films grown on SrTiO3 , LaAlO3 ,
SrTiO3 by PLD ~after Ref. 38!. and YSZ by PLD, where t is the reduced temperature ~after Ref. 38!.

J. Appl. Phys., Vol. 79, No. 4, 15 February 1996 Appl. Phys. Rev.: Julia M. Phillips 1837
FIG. 5. Resistivity vs temperature for a BSCCO film grown on SrTiO3 by
LPE ~after Ref. 39!.
5331025.45 It, too, has a phase transition within the film
processing regime ~at 800 K!, but this transition is second
order.16 While this leads to substrate twinning, there is no
discontinuous volume change and surface steps are not a
problem. The twinning has not prevented the growth of high-
quality films on this substrate, but it does make the fabrica-
tion of complex microwave devices such as filters impos-
sible, since the dielectric properties of the substrate vary
from point to point in a manner that cannot be controlled or
predicted. LaAlO3 has emerged as one of the most favored
HTS substrates, which has stimulated considerable work on
scaling up the diameter of crystals that can be grown by the
Czochralski technique. 100-cm-diam substrates are currently
available. There is no indication that larger diameters cannot
be grown given sufficient demand.
As with all the other substrate materials, more work has
been done with YBCO films on LaAlO3 substrates than with
other HTS films. State-of-the-art T c ~.90 K! and J c
~.53106 A/cm2 at 77 K! have been reported for films grown
by a wide variety of growth techniques. The films are typi-
cally highly epitaxial with strong c-axis orientation. In fact,
LaAlO3 seems to have become the substrate of choice for
‘‘standard’’ YBCO films. The temperature dependence of the
resistivity of a typical YBCO film on LaAlO3 is shown in
Fig. 9.
Epitaxial BSCCO ~2212! films have been grown on
LaAlO3 .46 The T c was measured to be 89 K ~see Fig. 10!,
and J c 523105 A/cm2 at 77 K and 13106 A/cm2 at 45 K.
FIG. 6. J c vs reduced temperature for LPE-grown BSCCO films on ~d!
SrTiO3 and ~s! LaGaO3 . The line represents the theoretical depairing cur-
rent density for BSCCO ~after Ref. 39!.
1838 J. Appl. Phys., Vol. 79, No. 4, 15 February 1996
FIG. 7. ac inductance resonant frequency, indicating superconducting tran-
sitions, as a function of temperature for TBCCO films prepared on different
substrates by a two-step process ~after Ref. 4!.
TBCCO ~2212! and ~2223! films of high quality have
also been grown, due in large part to the small ~1.63%! lat-
tice mismatch with the substrate.40,47– 49 There is no evidence
of film–substrate reaction. T c as high as 106 K ~2212! and
123 K ~1223! have been measured. J c for the ~2212! phase
has been measured to be 23106 A/cm2 at 80 K and 13107
A/cm2 at 4.2 K.49 For the ~2223! phase, J c 55.53105 ~77
K!.47 The J c of films deposited on LaAlO3 are reported to be
;20 times higher than for those deposited on YSZ and MgO
and the magnetic-field dependence of the ac susceptibility of
the films is lower.48 This has been attributed to less well-
defined boundaries between grains during film growth for
films on LaAlO3 .48
NdGaO3 ~e520! was introduced as a possible alternative
to the La-containing perovskites.44 With an orthorhombic
crystal structure and a50.5417 nm, b50.5499 nm, and
c50.7717 nm, it has smaller lattice mismatches than either
LaGaO3 or LaAlO3 . The coefficient of thermal expansion is
5.831026/K,50 making this mismatch somewhat larger than
FIG. 8. The crystal structure of LaGaO3 . HTS films grow at epitaxially at a
45° angle to the a 0 and b 0 axes, so that a c is the relevant ‘‘lattice constant’’
to be used in calculating the lattice match.
Appl. Phys. Rev.: Julia M. Phillips

FIG. 9. Resistivity vs temperature for a YBCO film grown on LaAlO3 by
the BaF2 process.
that of some of the other perovskite materials. It also has the
advantage of having no phase transitions between its melting
point and room temperature, so twin-free substrates are
available for YBCO growth. Na31 is a magnetic ion, how-
ever, which precludes its use as a substrate for microwave
devices. There have been conflicting reports regarding the
quality of film that can be grown on this substrate. Using
LPE,51 or pulsed laser deposition ~PLD!,52 high T c values
.89 K have been obtained. The PLD-grown films also have
J c ~77 K!.23106 A/cm2.
NdGaO3 is quite an attractive substrate for the growth of
a-axis-oriented YBCO films because of the low mismatch in
this orientation: 0.28% for the c axis and 0.10% for the b
axis.50 Some of the better a-axis-oriented films that have
been reported have been grown on this substrate.
Results for TBCCO ~2212! films on NdGaO3 have also
been somewhat mixed.40,45 In both reports T c ;100 K. J c ~77
K! is 53105 A/cm2.45 The orientation of the films is excel-
lent, although there is a small amount of a-axis material in
the c-axis films.40 There is also evidence for a small amount
of chemical reaction between the film and substrate.
Like LaGaO3 and LaAlO3 , NdGaO3 can be grown by the
Czochralski technique, and the process has been scaled up to
about 50-cm-diam boules. Further scale-up should be pos-
sible given sufficient demand, although there have been
some problems with crystal cracking during growth.
FIG. 10. Resistivity vs temperature for a BSCCO film grown on LaAlO3 by
metalorganic deposition ~after Ref. 46!.
J. Appl. Phys., Vol. 79, No. 4, 15 February 1996
NdAlO3 has been less studied than the perovskite mate-
rials already discussed. It has somewhat larger lattice mis-
matches with HTS compounds than the other materials, al-
though still smaller than some other heteroepitaxial systems
of current interest, e.g., GaAs on Si.37 Its main potential
advantage is the very high temperature of its second-order
phase transition, 1820 K. Only films grown by the BaF2 pro-
cess have been reported.43 These have T c 589.7 K, but the
J c ~77 K! is quite low, only 33104 A/cm2.
YAlO3 has been investigated to some extent as a poten-
tial HTS substrate material.6,53 Among its strengths is the
lack of twinning or phase transitions in the processing tem-
perature window required for HTS films. Its dielectric con-
stant of 16 is smaller than that of most of the perovskites. It
also has a promising loss tangent, with values at 10 GHz of
7.331025 at 300 K, 131025 at 77 K, and 231026 at 40 K. It
does, however, have a large mismatch with YBCO, given its
pseudocubic lattice parameters of a50.3662 nm, b50.3768
nm, and c50.3685 nm. Only small substrate sizes are avail-
able, probably because of the lack of motivation for scale-up.
The substrate supports YBCO films with T c .91 K and J c ~77
K!.7.23105 A/cm2.
PrGaO3 has a distorted perovskite structure with
a50.5462 nm, b50.5493 nm, and c50.7740 nm. YBCO
films have been grown on this material with T c 590 K.54 No
J c data have been reported.
There has been one report of a YBCO film on KTaO3 ,
which is cubic with a50.399 nm.55 The lattice mismatches
are somewhat larger than those of some of the other perov-
skite substrates, and the films are not as good. While T c is
quite high ~90 K!, J c is about 33105 A/cm2 at 77 K.
YbFeO3 and other magnetic orthoferrite materials could
be of interest as HTS substrates because of their magnetic
properties and structural compatibility with the films.56 This
material has lattice constants a50.536 nm, b50.550 nm, and
c50.777 nm. The dielectric constant is much lower than that
of most of the other HTS substrate candidates, having a
value of 4 –5. YBCO films grown on YbFeO3 have T c 588 K
and J c ~77 K!,13105 A/cm2. There is a twinning transition
in this substrate in the HTS processing range which leads
both to twin formation in the substrate ~and hence unpredict-
able dielectric variations across the substrate! and to twin-
ning in the film beyond what might normally be expected.56
A number of complex perovskite materials has been pro-
posed as potential HTS substrates.57,58 Unfortunately, there
have been almost no reports of film growth on these materi-
als because of the unavailability of single-crystal substrates,
although there has been some success using Sr2AlTaO6 as
part of multilayer HTS structures.59,60 There is one report of
YBCO growth on GdBa2NbO6 substrates, although the sub-
strate itself was polycrystalline, which undoubtedly affected
the quality of the film.61 This material is cubic with a50.843
nm. The dielectric constant is ;26, and tan d;431024. A
YBCO film grown on this material by PLD had T c 590 K.
Other properties of the films were not reported. Work on
these materials is too premature to know what the prospects
are with regard to obtaining large area substrates.
Appl. Phys. Rev.: Julia M. Phillips 1839
 TABLE V. Properties of non-perovskite structure oxide substrates for HTS materials.

Da/a Db/b Dc/c CTE Phase mp

~%! ~%! ~%! ~ppm! e36 tan d36 transf. ~K! ~K!

MgO 29.0 26.7 27.4 10.5 9.65 531024 ••• 3100

~100 K, 300 GHz!
Al2O3 29.4 27.0 211.2 8.4 9.34 331025 ••• 2300
~77 K, 5 GHz!
YSZ 13.6 16.3 15.8 8.8 25 831023 ••• 3000
~100 K, 300 GHz!
CeO2 0.0 11.3 11.9 17 ••• 2900
CaNdAlO4 13.6 14.9 13.8 19 131024 ••• 2093
~77 K, 5 GHz!
CaYAlO4 14.7 15.9 21.5 20 431025 •••
~77 K, 5 GHz!
SrLaAlO4 21.9 13.2 13.8 7.4 17 531024 ••• 1923
~100 K, 8 GHz!
SrLaGaO4 10.4 20.9 27.7 10–19 22–26 531025 ••• 1793
~77 K, 5 GHz!
Sr2RuO4 21.1 10.2 28.8
Mg2TiO4 210 28.8 28.1 12 10–15 1.531023 ••• 2029
MgAl2O4 25.6 24.2 23.5 12 531024 ••• 2408
~300 K, 1 MHz!
Y3Al5O12 24.6 23.2 22.6 10 931024 2243 2383
~300 K, 1 MHz!
Gd3Ga5O12 27.9 26.5 25.8 15 1.131023
~300 K, 1 MHz!
LiNbO3 14.8 16.2 16.7 23– 44 231023 1526
~300 K, 1 GHz!
MgLaAl11O19 23.2 21.8 16.3 11 731024
~300 K, 9.4 GHz!

C. Non-perovskite-structure oxides tensive investigations of substrate materials that have other

As discussed in the previous subsection, a number of
problems have emerged with HTS substrate materials with
perovskite-related crystal structures. These include high sub-
strate cost, dielectric constant values that are higher than
desired for many applications, twinning transitions within
the HTS processing range in a number of the materials, ques-
tions of the scalability of substrate size to arbitrary diameter,
and large dielectric losses in many of the substrates due to
the presence of magnetic ions. These issues have led to ex-
crystal structures. Many of these materials are oxides and, as
such, their chemical compatibility with HTS films may still
be good. In general, however, the structural matching be-
tween film and substrate is poorer for non-perovskite sub-
strates, making the growth of films with multiple orientations
and many grain boundaries more likely. On the other hand, a
number of these substrates are already available in large
sizes at reasonable cost. They may also have more favorable
dielectric properties and be known to be compatible with
other technologically important materials such as semicon-
ductors. Some of the properties of the most studied of these

FIG. 12. Resistivity vs temperature for YBCO films grown on: ~a! chemi-
cally polished MgO~100!; ~b! mechanically polished MgO; ~c! thermally
FIG. 11. The crystal structure of MgO ~after Ref. 142!. annealed MgO ~after Ref. 15!.

1840 J. Appl. Phys., Vol. 79, No. 4, 15 February 1996 Appl. Phys. Rev.: Julia M. Phillips

FIG. 13. The crystal structure of sapphire ~after Ref. 142!.
oxides with non-perovskite crystal structures are listed in
Table V. The lattice mismatches indicated are with YBCO.
MgO, with the NaCl crystal structure shown in Fig. 11,
has received a good deal of interest in light of its ready
availability and its modest dielectric constant ~e59.65!.15 It
has a 9% lattice mismatch with YBCO, but with proper sub-
strate preparation high-quality epitaxial films can be grown.
Substrate preparation has been shown to have a major effect
on the properties of YBCO films on MgO. Thermal anneal-
ing of the substrates produces films with good structural and
superconducting properties at reasonable growth tempera-
tures, whereas alternative chemical and mechanical treat-
ments lead to the formation of large-angle tilt boundaries and
degraded superconducting properties, such as the supercon-
ducting transition shown in Fig. 12.15 Such annealing treat-
ment has been shown to be responsible for improving the
properties of YBCO films as thin as 5 nm.62 The miscut of
the substrate is also very important in determining the mo-
saic spread in the film.27 In the case of films grown by metal-
organic chemical-vapor deposition ~MOCVD!, epitaxial
grains predominate in the films only when there is a high
density of steps on the MgO surface. Even the best films,
however, tend to have some high-angle grain boundaries,
which is probably responsible for the fact that such films
have poorer high-frequency characteristics than do the best
films grown on other substrates. MgO also reacts with water
vapor, which precludes its use as a substrate for films grown
by methods that require the presence of water.
MgO is one of the substrates that has been used to sup-
port a-axis-oriented YBCO layers,63,64 but the level of suc-
cess reported has been mixed,38 possibly due to the sensitiv-
ity of film quality to substrate surface preparation for this
material. The best a-axis films 100–200 nm thick have
T c 590 K and J c 53–53106 A/cm2. Even 10-nm-thick films
of this orientation have T c 589 K.63
There has been a number of studies of BSCCO film
growth on MgO, using a variety of film growth techniques
including sputtering,65 PLD,66 and LPE.67 It seems to be rela-
tively straightforward to produce ~2212! films with T c .80
K. The J c values tend to be rather modest, the best report to
date being a value of 13104 A/cm2 at 65 K.66
J. Appl. Phys., Vol. 79, No. 4, 15 February 1996
FIG. 14. The cubic fluorite crystal structure. YSZ, CeO2 , CaF2 , SrF2 , and
BaF2 have this structure.
MgO has also been investigated as a substrate for
TBCCO ~2212! films, where the lattice mismatch is
8.45%.40,68 This gives rise to weak in-plane orientation, al-
though the c axis of the film is perpendicular to the substrate
surface. There is little evidence of chemical reaction between
MgO and the film.40 T c ;105 K has been reported,68 with
J c ~77 K!51.23105 A/cm2 and J c ~4.2 K!51.13106 A/cm2.
Sapphire ~Al2O3! is of considerable interest as a sub-
strate in view of its modest dielectric constant ~e59.34! and
its commercial availability in large-diameter wafers as well
as its demonstrated compatibility with silicon in the silicon-
on-sapphire technology. Its crystal structure is shown in Fig.
13. Sapphire reacts with HTS materials, making growth on
unbuffered substrates challenging. The best results for
YBCO films on unbuffered sapphire give T c 585– 88 K,69
and J c ~67 K!513106 A/cm2.70 A buffer layer ~such as
SrTiO3 , MgO, or LaAlO3! must be used in order to obtain
high-quality films. Using a SrTiO3 buffer layer, T c 587 K
and J c ~74 K!523106 A/cm2.70 Because the crystal structure
is not cubic, the dielectric properties of sapphire are aniso-
tropic, which makes the modeling of microwave device per-
formance difficult. ZrO2 has served as a buffer layer for
YBCO growth on ~11̄02! sapphire substrates.71 This yields
T c 589.5 K and J c ~77 K!51.53106 A/cm2. In this structure
there is evidence of Al in the ZrO2 layer but not in the
YBCO. CeO2 has also been used as a buffer layer between
sapphire and YBCO.6,72 Only a 20 nm layer is necessary to
passivate the Al2O3 . These buffer layers still do not alleviate
the mismatch in the thermal-expansion coefficient of the sap-
phire and HTS materials, which causes films thicker than
;400 nm to crack. Even thinner films can develop microc-
racks with thermal cycling.6
TBCCO films have been grown on sapphire ~0001! using
a two-step postdeposition anneal.40 These films were not
aligned with the substrate and showed a large population of
secondary phases along with strong film–substrate reactions.
The interface was seen to be Tl deficient, and there was
evidence of BaAl2O4 . The T c onset from ac susceptibility
measurements was 99.5 K, but the transition was not com-
plete at 77 K. The film consisted mostly of the 2212 phase,
but a small amount of the 2223 phase was also observed.
Appl. Phys. Rev.: Julia M. Phillips 1841
 Yttria-stabilized ZrO2 ~YSZ! has been investigated ex-
tensively both as a substrate in its own right and as a buffer
layer between other substrates and HTS films.38 It has the
cubic fluorite crystal structure shown in Fig. 14. The interest
stems from its availability, fair lattice match with both
YBCO and Si, and the ability to grow it in thin-film form.
State-of-the-art T c ~92 K! and J c ~77 K! ~53106 A/cm2! have
been reported for YBCO films grown on YSZ,73 but the sub-
strate is not without its challenges. There have been numer-
ous reports of misoriented subgrains in generally epitaxial
layers, with well-defined misorientation angles.73 There are
also many reports of BaZrO3 at the film–substrate interface,
indicating chemical reactions, although they seem to be con-
fined to the near-interface region.73 A recent report demon-
strates that the in-plane orientation of YBCO films on YSZ
substrates depends strongly on the deposition conditions.14
On smooth substrates ~i.e., no intentional miscut!, the epitax-
ial orientation is @110#YBCOi@110#YSZ. Surface steps can
be produced on such YSZ substrates by homoepitaxial
growth or by suitable annealing. Such surfaces give a differ-
ent epitaxial orientation: @110#YBCOi@100#YSZ. These films
have better superconducting properties than do those on
smooth surfaces.
The growth of highly oriented YBCO films on both rigid
and flexible randomly oriented polycrystalline YSZ sub-
strates has also been reported.74 c-axis perpendicular films
with mosaic spread of ;1° can be obtained. T c 589 K on
well-polished substrates. J c ~77 K!51.43103 A/cm2 on rigid
substrates. The T c of films deposited on flexible substrates
does not change on repeated bending, but the resistivity of FIG. 15. The K2NiF4 crystal structure, shown here as CaNdAlO4 .
the films increases, presumably due to the development of
microcracks. These findings are rather encouraging for appli-
cations requiring flexible substrates and/or current-carrying A number of oxides with the tetragonal K2NiF4 structure
ability in the HTS film. shown in Fig. 15 have been investigated as potential HTS
The quality of TBCCO films on YSZ substrates has gen- substrate materials. In general, they have dielectric properties
erally not been as high as that of films produced on other that are rather similar to those of the perovskite-based oxides
materials. The best results for the ~2212! phase yield T c 5106 and reasonable lattice matches with the HTS materials. One
K and J c ~77 K!51.73104 A/cm2.75 Interestingly, TBCCO advantage that they pose compared with some of the near-
films grown on flexible polycrystalline substrates yielded the perovskite materials is the lack of twinning. One of these
same properties.76 YSZ has successfully supported the materials is CaNdAlO4 .45,79– 82 It has a dielectric constant
growth of the ~2223! phase of TBCCO, with a T c of 121 K.77 e519 and tan d5131024. Its lattice constants of a50.369
No J c data were reported. nm and c51.215 nm give a reasonable lattice match to the
CeO2 , with the same crystal structure ~inverse fluorite— HTS materials. The YBCO films were grown by pulsed laser
see Fig. 14! as that of YSZ has also received attention as a deposition, while the TBCCO films were grown by a two-
buffer layer, although not as a bulk substrate. The properties step process. Films on YBCO have been grown with T c as
of films are similar to those on YSZ. For example, use of a high as 88 K and J c ~77 K!51.03106 A/cm2.45 BSCCO films
double YSZ/CeO2 buffer layer on silicon on sapphire allows grown by sputtering have T c ;75 K.79 Films of TBCCO have
the growth of YBCO films with T c .90 K and J c ~77 T c 5100 K and J c ~77 K!53.53105 A/cm2.45 The chemical
K!.23106 A/cm2.78 The discovery of high-angle grain- reactivity of the substrate with HTS materials is the subject
boundary junctions with reproducible characteristics moti- of some debate. One report indicates that the interface of
vated the search for convenient ways to grow such bound- BSCCO films with CaNdAlO4 is sharper by Auger electron
aries reliably. The finding that different classes of substrate spectroscopy than that between BSCCO and LaGaO3 ,79,80
support different orientations of YBCO under the same while another indicates that the chemical instability of the
growth conditions19 offered such an opportunity. By starting material at high process temperatures will probably limit the
with a substrate of, say, MgO, it is possible to grow a buffer attractiveness of this material as an HTS substrate.45 Another
layer of another material such as SrTiO3 or CeO2 on part of problem with CaNdAlO4 is the sharp increase in microwave
the substrate. The different orientations of the YBCO on the loss at temperatures below 100 K.83 This is explained by
buffered and unbuffered regions give a reproducible grain magnetic ordering of the Nd ions and limits the appeal of the
boundary at the edge of the buffered film. substrate for many HTS film applications.

1842 J. Appl. Phys., Vol. 79, No. 4, 15 February 1996 Appl. Phys. Rev.: Julia M. Phillips

FIG. 16. The crystal structure of LiNbO3 ~after Ref. 142!.
CaYAlO4 is another potential substrate material with the
K2NiF4 structure.84 It has lattice parameters a5b50.3648
nm and c51.189 nm. The dielectric constant is 20;
tan d5431025 at 77 K and 5 GHz. YBCO and TBCCO
~2212! films on this substrate have worse properties than
those on CaNdAlO4 . In the case of YBCO T c ;86 K and
J c ~77 K!523105 A/cm2. For TBCCO films T c ;90 K and
J c ~77 K!523105 A/cm2. As in the case of CaNdAlO4 , reac-
tions between the film and substrate were cited as being a
significant problem.
LaSrAlO4 has a 3% lattice mismatch with YBCO, with
a5b50.3754 nm and c51.1263 nm.81,85,86 Its dielectric
properties are quoted as being ‘‘similar’’ to those of LaAlO3 ,
while the coefficient of thermal expansion is less than that of
the perovskites. Films have been grown on the ~001! and
~111̄8̄! orientations. On ~001!, YBCO films have a high de-
gree of a-axis orientation and T c 580 K. On ~111̄8̄!, T c .90
K, and J c ~77 K!52–33105 A/cm2.
LaSrGaO4 also has the K2NiF4 structure, with lattice pa-
rameters a50.384 nm and c51.2676 nm. The coefficient of
thermal expansion is 1031026/K. The dielectric constant is
22; tan d has been measured to be 531025.87 Only YBCO
films have been reported on this substrate. In the first report
on this substrate, it was stated that a-axis YBCO films re-
sulted from PLD growth under the same conditions that give
rise to c-axis-oriented films on other substrates.88 The sub-
strate supports high-quality films, with T c 591 K and J c ~77
K!53.53106 A/cm2.87
Sr2RuO4 is of interest because it exhibits metallic con-
ductivity in two dimensions, with rab 51024 V at 300 K.89 It
is semiconducting in the third dimension. The other oxide
substrate materials discussed in this subsection are all insu-
lators or semiconductors. The metallic nature of the conduc-
tivity, coupled with the potential chemical and structural
compatibility of the material with HTS compounds, is a very
attractive combination of properties for some applications.
Sr2RuO4 has a tetragonal crystal structure with a50.387 nm
and c51.274 nm. YBCO films on this substrate have T c 586
J. Appl. Phys., Vol. 79, No. 4, 15 February 1996
K. The measurement of J c is difficult due to the conductivity
of the substrate.
Mg2TiO4 has been grown on MgO by solid-state reaction
and then investigated as a substrate for YBCO.90–93 It is a
cubic material with a50.844 nm. The coefficient of thermal
expansion is 1231026/K, matching quite well with the HTS
materials. The dielectric constant is 12; tan d has been mea-
sured to be 1531024.90 The highest T c reported to date is
86.5 K. No J c values are in the literature.
MgAl2O4 ~spinel! is a cubic material with lattice param-
eter a50.8083 nm. The dielectric constant at 9.1 GHz is 12.
YBCO films with T c 577 K have been grown on this sub-
strate by PLD.94 BaF2 process films grown by the same
group were considerably worse.
Y3Al5O12 @yttrium aluminum garnet ~YAG!# is also cu-
bic with a lattice parameter a51.2009 nm. The dielectric
constant at 9.1 GHz is 10. PLD-deposited films have T c 587
K.94 Gd3Ga5O12 @gallium gadolinium garnet, ~GGG!# has
also been shown to support YBCO films with T c 591 K.
These films have primarily the a-axis orientation.95
LiNbO3 , with the crystal structure shown in Fig. 16, has
been tested as a substrate for YBCO, but the results have
been rather inconsistent.96 –98 This is a hexagonal crystal,
with a50.5148 nm and c51.3868 nm. In two cases, films of
fair quality with the c axis perpendicular to the growth di-
rection were grown on unbuffered substrates with T c 588 K
and J c ~77 K!;23105 A/cm2.96,97 In this case, T c 590 K for
films more than 100 nm thick. The T c was degraded for
thinner films, with T c 576 K for 50 nm layers. For the thick-
est films studied ~600 nm!, J c ~77 K!523105 A/cm2 and
J c ~4.2 K!583105 A/cm2. The room-temperature resistivity
of the films is quite high, 1 mV cm. The dependence of the
film properties on thickness is indicative of serious film–
substrate interactions, which was substantiated by the work
of another group.98 This report stated that the T c of the films
is seriously degraded if there is no buffer, being in the range
50–70 K. YSZ is a good buffer in this case, raising T c to 89
K. No J c values were reported.
MgLaAl11O19 is another hexagonal material with
a50.5583 nm and c52.1953 nm, giving a lattice mismatch
with YBCO of less than 2%.99,100 The dielectric constant of
11 is lower than that of many candidate substrate materials.
tan d seems to be rather high, measured as 731024 at 9.4
GHz. Films grown on the ~110! surface of this material by
PLD have the c axis perpendicular to the growth direction
and T c 589.5 K.
Substrate materials with the gehlenite structure, such as
BaLaGa3O7 and SrLaGa3O7 have received a limited amount
of attention.80,101 Both have tetragonal crystal structures,
with a50.815 nm and c50.5399 nm for BaLaGa3O7 and
a50.806 nm and c50.534 nm for SrLaGa3O7 . The dielectric
constants for both materials are rather promising, lying in the
range of 9–13. Attempts to grow YBCO and BSCCO films
on these substrates have been unsuccessful due to diffusion
of Ba and Ga into the film.
Y2BaCuO5 has been investigated as a polycrystalline
substrate for relatively thick films ~10 mm! deposited by rf
sputtering and silk-screen printing.102,103 Needless to say, the
Appl. Phys. Rev.: Julia M. Phillips 1843
FIG. 17. Resistivity vs temperature for a 50 nm PLD-grown YBCO film on
YSZ/Si ~after Ref. 12!.
films are not epitaxial. T c 588 K and J c ~77 K!513103
A/cm2.
Sr2Ca2Cu4Oy substrates have been investigated for
BSCCO films produced by a rather novel process.104 The
polycrystalline ceramic substrates had a layer of Bi evapo-
rated on them, followed by an anneal, so that the HTS layer
was formed by reaction of the Bi with the substrate itself.
The ~2212! phase predominated. A T c of 78 K and J c ~70 K!
of 13103 A/cm2 were measured for 1-mm-thick films.
D. Semiconductors
In spite of serious problems with chemical reactivity, Si
has received considerable attention as a substrate material
due to the tantalizing possibilities of integrating semiconduc-
tors with superconductors. Some of the potential applications
of HTS films outlined in Sec. II D require intimate contact
between semiconducting and superconducting layers. One
natural way of accomplishing this is to have the semiconduc-
tor serve as the substrate. Si is by far the most common
semiconductor in use today. It also offers a reasonable lattice
match with the HTS compounds. Unfortunately, the good
points of Si as a substrate for HTS films stop there. The
reactivity between Si and HTS materials is extremely severe.
In addition, the coefficients of thermal expansion are very
badly matched, being 3– 4 times less in Si than in the HTS
compounds. For these reasons, the results on YBCO films
grown on Si have been extremely disappointing. The T c of
YBCO grown on bare Si is typically in the range of 50 K.105
The best results on bare Si, reported to be T c 581.5 K and
J c ~4.2 K!;104 A/cm2, have been achieved at growth tem-
peratures much lower than those required to obtain state-of-
the-art films, due to the reactivity of the substrate.106 Under
these conditions, the films are granular and/or porous and
contain several atomic percent Si.
The best results that have been achieved to date for
YBCO films on Si have involved the use of YSZ as a buffer
layer.12 In this case, as shown in Fig. 17, T c 586 – 88 K, and
J c ~77 K!52.23106 A/cm2. The best films are less than 50
nm thick, unrelaxed and under tensile strain, exhibiting a
distorted unit cell. The thermal mismatch of Si and YBCO is
a serious problem that limits the ultimate YBCO thickness
that can be grown without film cracking to about 50 nm.
CeO2 has also been used as a buffer layer.107 It promotes the
1844 J. Appl. Phys., Vol. 79, No. 4, 15 February 1996
FIG. 18. Resistance vs temperature of a YBCO film on MgO/GaAs ~after
Ref. 113!.
growth of c-axis-oriented YBCO films. The best T c that has
been obtained with this structure is 84 K. Use of CaF2 as a
buffer layer has not been very successful: T c 569 K.108
There are no reports of TBCCO films on either buffered
or unbuffered Si, but there have been several attempts to
grow BSCCO layers.105,109 As with YBCO, the only success
has involved buffer layers. In the case of TiN/Ti/Ag buffers,
a T c of 78 K was reported.105 For MgO buffer layers, T c 580
K and J c ~77 K!513104 A/cm2.
Growth of HTS films on GaAs has proven to be even
more difficult than similar depositions on Si because of the
lower temperatures tolerated by the compound semiconduc-
tor. A number of buffer layers has been tried, mostly with
limited success. Examples include CaF2 , AlGaO3 , indium tin
oxide, Al2O3 , YSZ, and a YSZ/Si3N4 double-buffer
layer.110–112 Of these, the Al2O3 buffer gave the best results,
with T c 580 K and J c ~5 K!513106 A/cm2. Recent progress
has included the growth of reasonable quality YBCO films
~T c 587 K; J c ~77 K!51.53105 A/cm2! on GaAs using a
MgO buffer layer ~see Fig. 18!, possibly coupled with a
BaTiO3 layer on top of that.113 It has been found that the
MgO buffer layer may be nonuniform and rough unless the
GaAs surface is passivated by Sb prior to the MgO
growth.114
E. Metals
Attempts to grow high-quality HTS films on metallic
substrates have been proceeding almost as long as HTS films
have been grown on any substrate. This interest has been
spurred by the desirability of metallic substrates as an alter-
native current-carrying path, which is desirable for a number
of applications. The flexibility of thin metal substrates is also
attractive for many purposes. These applications usually re-
quire thick films so that the techniques used for film deposi-
tion tend to be different from those used on nonmetallic sub-
strates. Whereas physical vapor deposition techniques of
various sorts tend to be favored for growth on nonmetallic
substrates of HTS films that are perhaps a few hundred nm
thick, various chemical and spray deposition techniques have
been studied most extensively for films on metal substrates.
This by itself tends to result in a difference in the film quality
that has been reported, since physical deposition techniques
have been more highly developed to give optimized super-
Appl. Phys. Rev.: Julia M. Phillips
FIG. 19. J c ~77 K! dependence on in-plane texturing for YBCO films on
~d! YSZ/Pt/Hastelloy and ~s! YSZ/Hastelloy ~after Ref. 123!.
conducting properties. Whether this will remain an obstacle
to high-quality HTS films on metals remains to be seen. Un-
fortunately, metallic substrates pose many other challenges
as HTS substrates. First, the crystal structures of metals is
very different from that of the HTS compounds, so that epi-
taxy is not likely or even possible on most metal substrates.
Second, many metals react strongly with the HTS materials,
degrading the superconducting properties substantially. Fi-
nally, the coefficient of thermal expansion of metals tends to
be quite different from that of HTS films, giving problems
with film cracking, etc. Nevertheless, the growth of HTS
films on metal substrates continues to be an active area of
research that has met with some success.
Silver is one of the metals that has received the most
attention as a HTS substrate115–119 because it does not react
with HTS compounds in a detrimental way and, in fact, is
used to improve the transport properties of bulk HTS mate-
rial. MOCVD-deposited YBCO films on Ag substrates have
T c .85 K,117 and J c ~77 K!;1.53104 A/cm2. BSCCO films
with mixed phases have been deposited on both YSZ buff-
ered and unbuffered Ag.118 The T c of the films is 80 K in
both cases. The J c of films on the unbuffered substrate is
3.93105 A/cm2 at 5.5 K.120
Gold has not been used as successfully as a HTS sub-
strate because it has a more detrimental effect on the super-
conducting properties of the film. There is, however, a report
of its use as a substrate for TBCCO ~2212! films grown by
MOCVD.121 The film is highly textured with the crystallite c
axes oriented perpendicular to the substrate surface. The
magnetically derived T c is about 80 K. No J c data were
reported.
Copper also tends to react with HTS materials unless a
buffer layer is used.122 In this report, the Cu substrate was
first coated with a layer of Ti, followed with a layer of MgO.
The highest T c of YBCO films deposited by sputtering on
such substrates was 85.9 K, with a J c ~77 K! of 1.53104
A/cm2.
Hastelloy ~Ni–Cr–Mo alloy! has been studied exten-
sively as a potential HTS substrate.120,123–129 A buffer layer is
essential to prevent harmful film–substrate reactions. The
buffer layers that have been studied include YSZ,120,123,125,128
Pt,123 SrTiO3 ,124 TiN,127 and BaTiO3 .126,129 SrTiO3 was re-
ported to give poor results. Most of the other buffer layers
gave T c for YBCO between 80 and 85 K and J c ~77
J. Appl. Phys., Vol. 79, No. 4, 15 February 1996
FIG. 20. The crystal structure of MgF2 ~after Ref. 142!.
K!;1–23104 A/cm2. Until recently, the best results, perhaps
for any metal substrate, involved the growth of a biaxially
textured YSZ layer obtained by a bias sputtering technique
on Hastelloy.123 YBCO films grown on this substrate had
T c 590 K and J c ~77 K!533105 A/cm2, as shown in Fig. 19.
The rough morphology resulting from this protocol could be
largely eliminated by interposing a thin Pt layer between the
Hastelloy and YSZ. The superconducting properties of this
more complex structure were not reported. Elemental nickel
has also been investigated as a HTS substrate.130–132 The
results are quite similar to those for Hastelloy. Recently, a
substantial improvement in the properties of YBCO films on
YSZ-buffered Hastelloy has been reported.133,134 The crystal-
lographic alignment of the YSZ buffer layer grown by ion-
beam-assisted deposition in this work is dramatically im-
proved over previous results, which is likely a significant
contributor to the improved superconducting properties.
YBCO films as thick as 1 mm have been grown with J c ~77
K! of 13106 A/cm2. The films, which were grown on 130-
mm-thick Hastelloy, can undergo considerable and repeated
bending without loss of superconducting quality.
F. Other materials
Of the substrate materials that have been considered for
HTS films that do not fall into one of the categories already
discussed, the alkaline earth fluorides, MgF2 , CaF2 , SrF2 ,
and BaF2 , have probably received the most attention.135–138
MgF2 has the crystal structure shown in Fig. 20. CaF2 , SrF2 ,
and BaF2 have the cubic fluorite structure shown in Fig. 14.
They are attractive because of their reasonable dielectric
properties @e in the range of 6 –7 ~Ref. 139!# and coefficients
of thermal expansion that rather closely match those of the
HTS materials ~between 931026/K for MgF2 and
1831026/K for CaF2!.135,139 The investigations have been
confined to YBCO. The quality of films grown directly on
fluoride substrates depends strongly on which fluoride is be-
ing considered. CaF2 is reported as being the worst substrate
in this family, reacting strongly with the films and yielding
insulating layers under all conditions studied. The reports on
MgF2 as a substrate vary substantially, ranging from reports
of extensive reaction at elevated temperature, weak film ori-
entation, and no T c ,136,137 to giving the best result of all
Appl. Phys. Rev.: Julia M. Phillips 1845

FIG. 21. Resistance vs temperature of a YBCO film grown by PLD on
SrTiO3/MgO/MgF2 ~after Ref. 135!.
materials in this class, with a T c of 83 K.138 SrF2 is reported
as being one of the better substrates in this class, with little
obvious reaction with the film136 and T c 573 K.138 BaF2 is
the preferred substrate, with good c-axis orientation, no ob-
vious reaction with the film, and T c 579– 80 K.136
The best films on alkaline earth fluoride substrates have
been achieved on MgF2 using a double-buffer layer of 10 nm
SrTiO3 on top of 80 nm of MgO on MgF2 .135 This treatment
gives strong c-axis orientation with T c 588 – 89 K and
J c 543106 A/cm2 at 77 K, making these YBCO layers ap-
pear quite competitive with layers grown on other substrates.
The dependence of film resistance on temperature is shown
in Fig. 21. MgF2 is attractive because it is available in boules
up to 12 in. in diameter13 due to its development for low-loss
optical components.
LiBaF3 has lattice matches comparable in magnitude to
those of NdAlO3 discussed in Sec. III B, although opposite
in sign.140 It has the perovskite crystal structure shown in
Fig. 2~a!. In addition, its dielectric constant is roughly half
that of the gallates and aluminates, at about 13.5. Potential
disadvantages of LiBaF3 are its larger thermal mismatch with
HTS materials ~the coefficient of thermal expansion is
2531026/K! and its low melting point ~1120 K!. While it has
been used successfully for the growth of ~Ba,K!BiO3 super-
conducting films,141 which require low growth temperatures
compared with the HTS materials, it has not been used suc-
cessfully for HTS films.43 This result emphasizes the over-
riding importance of chemical compatibility in determining
the suitability of a substrate for HTS film growth. If the
chemical compatibility is poor, a good structural match be-
comes irrelevant.
IV. SUMMARY
Progress in the identification and utilization of substrate
materials for HTS films has been substantial, but less impres-
sive than progress in the films themselves. Considerable
work is needed, since some of the remaining problems in the
films are almost certainly connected with the lack of an ideal
substrate on which to grow them. Work continues in this
1846 J. Appl. Phys., Vol. 79, No. 4, 15 February 1996
field, and it is likely that much better substrate materials will
be available in the relatively near future than can be obtained
today.
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