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transistors are produced using high cell density, DMOS trench ● RDS(ON) ≦36mΩ@VGS=-4.5V
PIN CONFIGURATION
(DFN 3.3x3.3)
Top View
May, 2010-Ver1.2 01
ME7835/ME7835-G
P-Channel Enhancement Mode Mosfet
DCC
正式發行
May, 2010-Ver1.2 02
ME7835/ME7835-G
P-Channel Enhancement Mode Mosfet
Typical Characteristics (TJ =25℃ Noted)
DCC
正式發行
May, 2010-Ver1.2 03
ME7835/ME7835-G
P-Channel Enhancement Mode Mosfet
Typical Characteristics (TJ =25℃ Noted)
DCC
正式發行
May, 2010-Ver1.2 04
ME7835/ME7835-G
P-Channel Enhancement Mode Mosfet
Unit:mm
DCC
正式發行
May, 2010-Ver1.2 05