IGBT MODULE Spec.No.

IGBT-SP-15002 R2 P1

MBN1200F33F-C Preliminary Specification

3300V Silicon N-channel IGBT F version with SiC Diode

FEATURES
 Soft switching & low conduction loss IGBT :
Soft low-injection punch-through
High conductivity IGBT with advanced trench MOS gate.
 Low driving power due to low input capacitance.
 Ultra low recovery loss with SiC diode.
 High Current rate Package.
 Low stray inductance.
 RoHS

ABSOLUTE MAXIMUM RATINGS (Tc=25oC )

Item Symbol Unit MBN1200F33F-C

Collector Emitter Voltage VCES V 3,300
Gate Emitter Voltage VGES V 20
DC IC 1,200
Collector Current A
1ms ICp 2,400
DC IF 1,200
Forward Current A
1ms IFM 2,400
oC
Junction Temperature Tj -40 ~ +150
oC
Storage Temperature Tstg -40 ~ +150
Isolation Voltage VISO VRMS 6,000(AC 1 minute)
Terminals (M4/M8) - 2/15 (1)
Screw Torque N·m
Mounting (M6) - 6 (2)
+0
Notes: (1) Recommended Value 1.80.2/15 -3N·m (2) Recommended Value 5.50.5N·m

ELECTRICAL CHARACTERISTICS

Item Symbol Unit Min. Typ. Max. Test Conditions

- - 12 VCE=3,300V, VGE=0V, Tj=25oC
Collector Emitter Cut-Off Current I CES mA
- 25 - VCE=3,300V, VGE=0V, Tj=150oC
Gate Emitter Leakage Current IGES nA -500 - +500 VGE=20V, VCE=0V, Tj=25oC
Collector Emitter Saturation Voltage VCE(sat) V - 2.85 - IC=1200A, VGE=15V, Tj=150oC
Gate Emitter Threshold Voltage VGE(TO) V - 6.5 - VCE=10V, IC=1200mA, Tj=25oC
Input Capacitance Cies nF - 88 - VCE=10V, VGE=0V, f=100kHz, Tj=25oC
Internal Gate Resistance Rg(int) Ω - 1.9 - VCE=10V, VGE=0V, f=100kHz, Tj=25oC
Rise Time tr - 0.2 - VCC=1,800V, Ic=1200A
Turn On Time ton - 1.1 - Ls=100nH
Switching Times s RG(on/off)=6.8/6.8Ω (3)
Fall Time tf - 2.0 -
Turn Off Time toff - 4.2 - VGE=15V, Tj=150oC
Peak Forward Voltage Drop VFM V - 4.75 - IF=1200A, VGE=0V, Tj=150oC
VCC=1,800V, IF=1200A, Ls=100nH
Reverse Recovery Time trr s - 0.1 -
Tj=150oC
Turn On Loss Eon J/P - 1.4 - VCC=1,800V, Ic(IF)=1200A, Ls=100nH
Turn Off Loss Eoff J/P - 2.2 - RG(on/off)=6.8/6.8Ω (3)
Reverse Recovery Loss Err J/P - (0.1) - VGE=15V, Tj=150oC
Stray inductance module LSCE nH - 10 -
IGBT Rth(j-c) - - 0.010
Thermal Impedance K/W Junction to case
FWD Rth(j-c) - - (0.017)
Contact Thermal Impedance Rth(c-f) K/W - 0.008 - Case to fin
Notes: (3) RG value is a test condition value for evaluation, not recommended value.
Please, determine the suitable RG value by measuring switching behaviors.
* Please contact our representatives at order.
* For improvement, specifications are subject to change without notice.
* For actual application, please confirm this spec sheet is the newest revision.
* ELECTRICAL CHARACTERISTIC values according to IEC 60747–2 and IEC 60747–9
IGBT MODULE Spec.No.IGBT-SP-15002 R2 P2

MBN1200F33F-C Preliminary Specification

Typical Typical
2400 2400
Tj=25℃ Tj=150℃
VGE=15V
13V
VGE= 15V
2000 2000 13V
11V
Collector Current IC (A)

Collector Current IC (A)

1600 1600
11V

1200 1200

800 800
9V
9V

400 400

7V
7V
0 0
0 1 2 3 4 5 0 1 2 3 4 5

Collector - Emitter Voltage VCE (V) Collector - Emitter Voltage VCE (V)

IC vs. VCE (Tj=25℃) IC vs. VCE(Tj=150 oC)

Typical
2400
VGE=0V

2000
Tj=150℃
Tj=25℃
Forward Current IF (A)

1600

1200

800

400

0
0 2 4 6 8 10 12

Forward Voltage VF (V)

IF vs. VF
IGBT MODULE Spec.No.IGBT-SP-15002 R2 P3

MBN1200F33F-C Preliminary Specification

Typical Typical
10 10
【Conditions】 【Conditions】
VCC=1800V VCC=1800V
VGE=±15V VGE=±15V
RG=6.8Ω RG=6.8Ω
Ls=100nH Ls=100nH
8 Tj=150oC Tj=150oC
8
Turn-on Loss, Eon (J/pulse)

Turn-of f Loss, Eof f (J/pulse)

6 6
2 2
y = 6E-07x + 0.0003x + 0.0811 y = 6E-08x + 0.0016x + 0.2667

4 4

2 2

0 0
0 500 1000 1500 2000 2500 0 500 1000 1500 2000 2500
Collector Current, IC (A) Collector Current, IC (A)

Turn-on loss vs. Collector current Turn-off loss vs. Collector current
Typical Typical
1 8
【Conditions】
VCC=1800V 【Conditions】
VGE=±15V VCC=1800V
RG=6.8Ω VGE=±15V
Ls=100nH RG=6.8Ω
Tj=150oC Ls=100nH
0.8 Tj=150oC

6
Reverse Recovery Loss, Err (J/pulse)

Swiching time, ton,tr,tof f,tf,trr (us)

0.6

toff
2
4
y = -2E-08x + 0.0001x + 0.0052

0.4

tf
2
0.2

ton

tr
trr
0 0
0 500 1000 1500 2000 2500 0 500 1000 1500 2000 2500
Forward Current, IF (A) Collector Current, IC,IF (A)

Recovery loss vs. Forward current Switching time vs. Collector current
IGBT MODULE Spec.No.IGBT-SP-15002 R2 P4

MBN1200F33F-C Preliminary Specification

Typical Typical
5 5
【Conditions】 【Conditions】
VCC=1800V VCC=1800V
IC=1200A IC=1200A
VGE=±15V VGE=±15V
Ls=100nH Ls=100nH
4 Tj=150oC Tj=150oC
4
Turn-on Loss, Eon (J/pulse)

Turn-of f Loss, Eof f (J/pulse)

3 3

2 2

1 1

0 0
0 5 10 15 20 25 0 5 10 15 20 25

Gate Resistance, RG (Ω) Gate Resistance, RG (Ω)

Turn-on loss vs. Gate Resistance Turn-off loss vs. Gate Resistance

Typical Typical
1 10
【Conditions】 【Conditions】
VCC=1800V VCC=1800V
IF=1200A IC,IF=1200A
VGE=±15V VGE=±15V
Ls=100nH Ls=100nH
Tj=150oC Tj=150oC
0.8 8
Reverse Recovery Loss, Err (J/pulse)

Swiching time, ton,tr,tof f,tf,trr (us)

0.6 6

toff

0.4 4

tf
0.2 2

ton
tr
trr
0 0
0 5 10 15 20 25 0 5 10 15 20 25

Gate Resistance, RG (Ω) Gate Resistance, RG (Ω)

Recovery loss vs. Gate Resistance Switching time vs. Gate Resistance
IGBT MODULE Spec.No.IGBT-SP-15002 R2 P5

MBN1200F33F-C Preliminary Specification

1000 Typical 15 Typical

Tj=25℃
f=100kHz

10

Cies
100 5

Gate-Emitter Voltage VGE (V)

Cies, Coes, Cres (nF)

10 -5
Coes

Cres -10
VCC=1800V, IC=1200A
VGE=±15V,Ls=100nH
Tj=25o C

1 -15
0.1 1 10 100 -5 -4 -3 -2 -1 0 1 2 3 4 5
Collector-Emitter Voltage VCE (V) Gate Charge QG (uC)

Cies, Coes, Cres - VCE QG - VGE

3000

2500

2000
IC (A)

1500

1000

500
VCC≦2200V, Tj=150oC
VGE=±15V, RG(off)=6.8Ω
Ls≦100nH, Pulse width≧10us

0
0 1000 2000 3000 4000 5000

VCE (V) *Def ined at auxiliary terminals

RBSOA
IGBT MODULE Spec.No.IGBT-SP-15002 R2 P6

MBN1200F33F-C Preliminary Specification

OUTLINE DRAWINGS

Fig.1 Outline Drawings

C C
C

E E E

Fig.2 Circuit diagram

IGBT MODULE Spec.No.IGBT-SP-15002 R2 P7

MBN1200F33F-C Preliminary Specification

HITACHI POWER SEMICONDUCTORS

Notices
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