MOS FET FKV660S

Absolute Maximum Ratings (Ta=25ºC) Electrical Characteristics ( Ta=25ºC) External Dimensions TO220S
Symbol Ratings Unit Ratings
Symbol Test Conditions Unit
VDSS 60 V min typ max
VGSS +20, –10 V V(BR)DSS ID=100µA, VGS=0V 60 V 10.2±0.3 4.44±0.2
ID ±60 A VGS =+20V +10 1.3±0.2

(1.4)
IGSS µA
ID(pulse) ±180 A VGS =–10V –5
PD 60(Tc=25ºC) W IDSS VDS=60V, VGS=0V 100 µA a
1.6

+0.3
10.0 –0.5
Tch 150 ºC VTH VDS=10V, ID=250µA 1.0 2.5 V

8.6±0.3
b
Tstg –40 to +150 ºC Re (yfs) VDS=10V, ID=25A 20 S +0.2

(1.5)
0.1– 0.1
PW 100µs, duty 1% RDS(ON) VGS=10V, ID=25A 11 14 mΩ
Ciss VDS=10V 2500 pF 1.27±0.2

+0.3
3.0 –0.5
+0.2
Coss f=1.0MHz 900 pF 0.86 – 0.1 0.4±0.1
Crss VGS=0V 150 pF 1.2±0.2
t d(on) 50 ns 2.54±0.5 2.54±0.5
ID=25A
tr VDD=12V 400 ns
t d(off) RL=0.48Ω 400 ns a) Part No.
tf VGS=10V 300 ns b) Lot No.
VSD ISD=50A, VGS=0V 1.0 1.5 V (Unit : mm)

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