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J O U R N A L O F M A T E R I A L S S C I E N C E L E T T E R S 2 2, 2 0 0 3, 737 – 738

Third order nonlinear polymer materials for photonics


S. K. SHARMA, GOEL, S. A. REZAN
Faculty of Engineering and Technology, Multimedia University, Melaka Campus, 75450 Melaka, Malaysia
E-mail: sudhir73 2000@yahoo.com; sudhir.sharma@mmu.edu.my

V. N. MISRA
Faculty of Engineering, Multimedia University, Cyberjaya Campus, 63100 Cyberjaya, Selangor, Malaysia

K. N. TRIPATHI
Department of Electronic Science, University of Delhi, South Campus, New Delhi, India

We are living in an age where speed and efficiency quired for designing prototype devices is not yet widely
are very important to us. Light wave technology of- available. It is known that the key to device operation
fers promise in these regards where photons instead of is the maximum nonlinear phase shift which can be
electrons are used to acquire, process, store and trans- optically produced in a material,
fer information. This technology is called photonics.
The most important advantage of photonics over elec- ϑ NL = n 2 I k0 L eff (2)
tronics is the gain in speed; this results from the sim-
ple fact that a photon travels much faster than an elec- where L eff is the effective interaction length, n 2 is non-
tron. Also, one can store information more compactly. linear coefficient, I is local intensity and ϑ NL is non-
Very stringent demands are placed on new technologies. linear phase shift [1]. A fundamental limitation to L eff
Some of the important features required from a new is the material absorption which has both a linear α0 and
technology suitable for the next generation are listed a nonlinear contribution γ I where γ is the two photon
in Fig 1. First, the operating speed of the devices is coefficient, usually in cm/GW. As the intensity is in-
very important; second the technology should involve creased, a maximum in index change, n sat , is always
light-weight components so that it can also easily inter- reached due to saturation of the nonlinear mechanism
face with space based systems. Other important require- or due to material damage. This leads to a maximum
ments are compactness, ability to integrate into a system nonlinear phase shift of
network, and device components which have exponen-
tial durability. The success of these new technologies 2π n sat
is crucially dependent on the availability of advanced 2π W = (3)
new materials which are highly efficient, durable in α0 λ
their performance and simultaneously perform more
than one function. These are the high performance where n sat is saturation index change, α0 is linear
multifunctional materials. absorption coefficient, W is phase shift and λ is wave-
Although third order nonlinearities can have many length. The minimum value of W required varies from
possible applications, the most interesting ones are device to device with W > 1 being typical. However,
based on a refractive index which varies with the local the value of W is known for only a handful of mate-
intensity of light inside the materials. This is commonly rials, none of them having an optimum value. On the
written as other hand, if the maximum phase shift is limited by
two photon absorption, we can define another figure of
merit
n = n0 + n2 I (1)
2λγ
T = (4)
where n 0 is the low power refractive index, I is the local n2
intensity and n 2 is the nonlinear coefficient in inverse
intensity units, for example cm2 /W. A power dependent with T < 1 being required for device purposes [2]. Typ-
refractive index leads to a power dependent wavevector ically n 2 has been the measured at only a few wave-
and a power dependent phase shift after some propa- lengths near or at the electronic resonance of the ma-
gation distance L. This in turn means that wavevector terial, and rarely is the absorption coefficient, linear or
matching, interactions and interference effects can all nonlinear also reported. In fact, summarized in Table I
be controlled by changing intensity. Most applications are the very few cases for which the parameters of in-
stem from these two concepts. terest are known [3, 4].
To date very few all-optical devices based on nonlin- Despite these limitations, a number of device related
ear polymer materials have been reported. An impor- experiments have been performed on the best materials
tant reason is that the search for appropriate materials available at the time. These include absorption bleach-
is still in its infancy. Furthermore, the information re- ing, optical bistability, nonlinear grating distributed
0261–8028 
C 2003 Kluwer Academic Publishers 737
Affordable

Light Weight Ultrafast Speed

New Technology

Compactness Exceptional Durability System Integration

(High Density

Information
Storage)

High Performance

Multifunctional Materials

Figure 1

feedback and coupling, optical limiting and all-optical tical properties as a function of wavelength. It is in this
switching [5, 6]. area that progress needs to be made.
A nonlinear directional coupler for all-optical Nonlinear polymer materials have shown real
switching has been made out of polystyrene. Switching promise for applications in nonlinear optics over the
due to thermal effects was observed, as well as due to last few years. New materials have been synthesized,
two photon absorption [7]. In retrospect the two photon characterized, and in some cases already used in proto-
absorption coefficient was too large, resulting in a value type devices. For second order nonlinearities the future
of T > 10. Subsequent material studies of polystyrene is very promising indeed since efficient doublers ap-
at wavelength 1.30 microns indicate that switching due pear to have found a nich in data storage for which
to electronic nonlinearities should be possible at that their properties are near-ideal. In the case of third order
wavelength in this material. nonlinearities it is still too early to predict where the
Optical limiting for protecting sensors against strong ultimate applications will occur.
optical spikes has also been demonstrated with silicon-
napth-phthalocyanine [8]. The device relied on an ab-
sorption coefficient which was proportional to the in- References
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However, in this case there was one photon absorption Electron. 22 (1990) 95.
2. V. MIZRAHI, K. W. DELONG, G. I. STEGEMAN, M. A.
to an excited state which was connected by another S A F I and M . J . A N D R E J C O , Opt. Lett. 14 (1989) 1140.
very efficient one photon process to a higher excited 3. M. B. MARQUES, G. ASSANTO, G. I. STEGEMAN, G. R.
state. The cascading of these two processes exhibited a M O H L M A N N and E . W . P . E R D H U I S E N , Appl. Phys. Lett. 58
response similar to two photon absorption. (1991) 2613.
4. D . M . K R O L and M . T H A K U R , ibid. 56 (1990) 1406.
For the useful application of third order polymer non-
5. W . B L A U , Opt. Commun. 64 (1987) 85.
linearities, the major hurdle is to identify appropriate 6. J. W. WU,J. R. HELFIN,R. A. NORWOOD,K. Y. WONG,
materials. In order to choose materials, it is necessary O . Z A M A N I - K A M I R I and A . F . G A R I T O , J. Opt. Soc. Amer.
to completely characterize the linear and nonlinear op- B 9 (1989) 707.
7. P. D. TOWNSEND, J. L. JACKEL, G. L. BAKER, J. A.
S H E L B O U R N E I I I and S . E T E M A D , Appl. Phys. Lett. 55 (1989)
T A B L E I Waveguide compatible polymer materials with ultrafast 1829.
nonlinearities and their all-optical switching figures of merit 8. D. R. COULTER,V. M. MISKOWSKI,J. W. PERRY,T. H.
W E I , E . W . V A N S T R Y L A N D and D . J . H A G A N , in Proc.
Material n 2 cm2 /W α cm−1 W T λ microns of SPIE Meeting on Materials for Optical Switches, Isolaters and
Limiters, SPIE 1105, (1989) p. 42.
Polycarbonate −2.99 × 10−11 0.82 345 0.4 1.03
Polyacrylate −10−12 0.82 16 25 1.03
Polystyrene 1.35 × 10−13 2.1 2.4 128 1.3
Received 2 October 2002
and accepted 21 January 2003

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