BIRLA INSTITUTE OF TECHNOLOGY AND SCIENCE, K.K.

BIRLA CAMPUS
FIRST SEMESTER 2018-2019

MELG631 Physics and Modeling of Microelectronic Devices

Assignment-2

Due Date: 27th August 2018 (in class 4pm)

Total = 70 points

Please indicate clearly what method was used for calculation and clearly explain your thinking, that way
partial points may be awarded to you even if the final answer is incorrect. The following physical constants
and material properties may be needed to complete this assignment. Please submit original work only – DO
NOT COPY.

q=1.6x10-19C h=6.63x10-34J-s k=1.38x10-23J/K m0(electron)=9.1x10-31kg

ε0=8.85x10-12F/m mn-DOS(Si)=1.182 mp-DOS(Si)=0.81
mn-DOS(GaAs)=0.065 mp-DOS(GaAs)=0.524 EG(Si)=1.12eV@300K EG(GaAs)=1.42eV@300K
Temperature dependent BG Parameters
EG(0)-Si=1.17eV αSi=4.73x10-4 βSi=636
EG(0)-GaAs=1.519eV αGaAs=5.405x10-4 βGaAs=204
μn(Si)=1350 cm /Vs
2 μp(Si)= 480 cm /Vs
2 μn(GaAs)=8500 cm2/Vs μp(GaAs)= 400 cm2/Vs

Q1. Assuming𝑁𝐴 = 𝑁𝐷 = 0; calculate the resistivity of intrinsic Si and GaAs at 300K? What is its
resistivity at 0K and at 250K? (10 points)

Q2. Assume a p-type semiconductor that has been doped as the following where x is in

Assume that the dopants are completely ionized.

(a) Plot the band diagram of the semiconductor along x
(b) Calculate and plot the built-in electric field in the sample
(c) What impact will this have on any minority carriers that are generated at x=0 (10points)
Q3. Suppose light of flux 𝐺𝐿 is shining (ℎ𝜈 > 𝐸𝐺 ) on an N-type semiconductor and is shut off at time t=0.
Assume low level injection. Setup the continuity equation for this system. What is the time response for
the excess carriers in the semiconductor? Specifically both n and p (20 points)

Q4. As discussed in class, the surface of the semiconductor consists of dangling bonds which create traps
within the bandgap at the surface which act as R-G centers. Assume an n-type semiconductor that has
light shining on it with a flux GL. The net recombination rate at the surface can be given by
𝑈 = 𝑣𝑡ℎ 𝜎𝑁𝑡𝑠 (𝑝𝑠 − 𝑝0 )
Where 𝑁𝑡𝑠 =density of surface recombination centers
𝑆 = 𝑣𝑡ℎ 𝜎𝑁𝑡𝑠 =Surface recombination velocity
𝑝𝑠 =Surface hole concentration

Assume that this is the predominant mode of recombination at the surface (bulk recombination is
negligible).Derive the expression for the excess hole concentration in the semiconductor. Plot the
excess carrier concentration at steady state. What happens to this concentration when the surface
recombination velocity becomes infinite? (30 points)