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Application
• All types of resistive, inductive and capacitive loads
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input,
monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.
Page 1 2004-01-27
BTS 4141N
Block Diagram
+ Vbb 4
Voltage Overvoltage Current Gate
source protection limit protection
V Logic
Charge pump Limit for OUT
Voltage
unclamped 1
sensor Level shifter ind. loads Temperature
Rectifier sensor
R
3 in
IN Load
ESD Logic
GND miniPROFET®
2
Signal GND Load GND
Page 2 2004-01-27
BTS 4141N
Maximum Ratings
Parameter Symbol Value Unit
at Tj = 25°C, unless otherwise specified
Supply voltage Vbb -0,31)...48 V
Continuous input voltage2) VIN -10...Vbb
Load current (Short - circuit current, see page 5) IL self limited A
Current through input pin (DC) I IN ±5 mA
Reverse current through GND-pin 3) -I GND -0.5 A
Operating temperature Tj internal limited °C
Storage temperature T stg -55 ... +150
Power dissipation 4) Ptot 1.4 W
Inductive load switch-off energy dissipation 4)5) EAS 0.7 J
single pulse
Tj = 125 °C, IL = 0.5 A
Load dump protection 5) VLoadDump6)= VA + VS VLoaddump V
RI=2Ω, td=400ms, VIN= low or high, VA=13,5V
RL = 47 Ω 83
Electrostatic discharge voltage (Human Body Model) VESD kV
according to ANSI EOS/ESD - S5.1 - 1993
ESD STM5.1 - 1998
Input pin ±1
All other pins ±5
1defined by P
tot
2At V > Vbb, the input current is not allowed to exceed ±5 mA.
IN
3defined by P
tot
4Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for V
bb
connection. PCB is vertical without blown air.
5not subject to production test, specified by design
6V
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 .
Supply voltages higher than V bb(AZ) require an external current limit for the GND pin, e.g. with a
150Ω resistor in GND connection. A resistor for the protection of the input is integrated.
Page 3 2004-01-27
BTS 4141N
Electrical Characteristics
Parameter Symbol Values Unit
at Tj = -40...125 °C, Vbb = 15...30 V unless otherwise specified min. typ. max.
Thermal Characteristics
Thermal resistance @ min. footprint Rth(JA) - - 125 K/W
Thermal resistance @ 6 cm 2 cooling area 1) Rth(JA) - - 70
Thermal resistance, junction - soldering point RthJS - - 7 K/W
1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for V
bb
connection. PCB is vertical without blown air.
2Nominal load current is limited by the current limitation ( see page 5 )
Page 4 2004-01-27
BTS 4141N
Electrical Characteristics
Parameter Symbol Values Unit
at Tj = -40...125 °C, Vbb = 15...30 V unless otherwise specified min. typ. max.
Operating Parameters
Operating voltage Vbb(on) 12 - 45 V
Undervoltage shutdown Vbb(under) 7 - 10.5
Undervoltage restart Vbb(u rst) - - 11
Undervoltage hysteresis ∆Vbb(under) - 0.5 -
∆Vbb(under) = Vbb(u rst) - Vbb(under)
Standby current Ibb(off) µA
Tj = -40...85 °C, V IN ≤ 1,2 V - 10 25
Tj = 125 °C1) - - 50
Operating current IGND - 1 1.6 mA
Leakage output current (included in Ibb(off)) IL(off) - 3.5 10 µA
VIN ≤ 1,2 V
Protection Functions2)
Initial peak short circuit current limit IL(SCp) A
Tj = -40 °C, Vbb = 20 V, tm = 150 µs - - 2.1
Tj = 25 °C - 1.4 -
Tj = 125 °C 0.7 - -
Repetitive short circuit current limit IL(SCr) - 1.1 -
Tj = Tjt (see timing diagrams)
Output clamp (inductive load switch off) VON(CL) 62 68 - V
at VOUT = Vbb - VON(CL), I bb = 4 mA
Overvoltage protection 3) Vbb(AZ) 47 - -
Ibb = 4 mA
Thermal overload trip temperature 4) Tjt 135 - - °C
Thermal hysteresis ∆Tjt - 10 - K
1higher current due temperature sensor
2Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
3see also V
ON(CL) in circuit diagram
4 higher operating temperature at normal function available
Page 5 2004-01-27
BTS 4141N
Electrical Characteristics
Parameter Symbol Values Unit
at Tj = -40...125 °C, Vbb = 15...30 V unless otherwise specified min. typ. max.
Input
Continuous input voltage1) VIN -102) - Vbb V
Input turn-on threshold voltage VIN(T+) - - 3.0
Input turn-off threshold voltage VIN(T-) 1.82 - -
Input threshold hysteresis ∆VIN(T) - 0.2 -
Off state input current IIN(off) µA
VIN ≤ 1,8 V 20 - -
On state input current IIN(on) - - 110
Input delay time at switch on Vbb td(Vbbon) 150 340 - µs
Input resistance (see page 8) RI 1.5 3 5 kΩ
Reverse Battery
Reverse battery voltage3)2) -Vbb V
RGND = 0 Ω - - 0.3
RGND = 150 Ω - - 45
Continuous reverse drain current2) IS - - 1 A
Tj = 25 °C
Drain-source diode voltage (VOUT > Vbb) -VON - 0.6 1.2 V
IF = 1 A
1At V > Vbb, the input current is not allowed to exceed ±5 mA.
IN
2not subject to production test, guaranted by design
3defined by P
tot
Page 6 2004-01-27
BTS 4141N
EMC-Characteristics
All EMC-Characteristics are based on limited number of sampels and no part of production test.
Test Conditions:
If not other specified the test circuitry is the minimal functional configuration without any external
components for protection or filtering.
Test Pulse Test Level Test Results Pulse Cycle Time and
On Off Generator Impedance
1 -200 V C C 500ms ; 10Ω
2 +200 V C C 500ms ; 10Ω
3a -200 V C C 100ms ; 50Ω
3b + 200 V C C 100ms ; 50Ω
41) -7 V C C 0,01Ω
5 175 V E (70V) E (70V) 400ms ; 2Ω
The test pulses are applied at Vbb
Class Content
C All functions of the device are performed as designed after exposure to disturbance.
E One or more function of a device does not perform as designed after exposure
and can not be returned to proper operation without repairing or replacing the
device. The value after the character shows the limit.
Test circuit:
Pulse
Bat.
Vbb
IN PROFET OUT
GND
RL
R GND
Page 7 2004-01-27
BTS 4141N
Conducted Emission
Acc. IEC 61967-4 (1Ω / 150Ω method)
90 1 5 0 o h m C la s s 6
1 5 0 o h m C la s s 1
80 V B B , n o is e f lo o r
VBB, ON
70
60
50
1 5 0 Ω / 8 -H
dBµV
40
30
20
1 5 0 Ω / 1 3 -N
10
-1 0
-2 0
0 ,1 1 10 100 1000
f / MHz
90 1 5 0 o h m C la s s 6
1 5 0 o h m C la s s 1
80 V B B , n o is e f lo o r
VBB, PW M
70
60
50
1 5 0 Ω / 8 -H
dBµV
40
30
20
1 5 0 Ω / 1 3 -N
10
-1 0
-2 0
0 ,1 1 10 100 1000
f / MHz
Test circuit:
5µH 150Ω-Network
Vbb
IN PROFET OUT
GND 5µH
R GND R
For defined decoupling and high reproducibility a defined choke (5µH at 1 MHz)
is inserted between supply and Vbb-pin.
Page 8 2004-01-27
BTS 4141N
Conducted Susceptibility
Acc. 47A/658/CD IEC 62132-4 (Direct Power Injection)
35
30
25
dBm
20
15 L im it D e v ic e : BTS 4142
Load: 47 O hm s
VBB, ON
O -M o d e : O N / O FF / PW M
10 C o u p lin g P o in t : VBB
VBB, OFF
M o n it o r in g : O ut
M o d u la t io n : CW
5
0
1 10 100 1000
f / MHz
35
30
25
dBm
20
15 L im it D e v ic e : BTS 4142
VBB, PW M Load: 47 O hm s
O -M o d e : ON / OFF / PW M
10 C o u p lin g P o in t : VBB
M o n it o r in g : O ut
M o d u la t io n : CW
5
0
1 10 100 1000
f / MHz
Test circuit:
HF
5µH
Vbb
6,8nF
R GND RL
6,8nF
For defined decoupling and high reproducibility the same choke and the same
150Ω -matching network as for the emission measurement is used.
Page 9 2004-01-27
BTS 4141N
+ V bb
Ibb
V
Z
Vbb V
ON
I IN IL VON
IN PROFET OUT
OUT
GND
V
IN GND
V I
bb GND VOUT
R
GND
R
I V
Z2
IN
IN
Logic
I
I
GND
GND
R GND
optional
The use of ESD zener diodes as voltage clamp
Signal GND
at DC conditions is not recommended
- Vbb
RI
IN
OUT
Power
Logic Inverse
Diode
GND
RGND
RL
optional
Page 10 2004-01-27
BTS 4141N
E bb
Vbb E AS
ELoad
IN OUT Vbb
PROFET
IN PROFET OUT
GND L
=
{
EL
V V V GND
bb IN GND ZL
ER
R
L
GND IL * L IL * R L
E AS = * ( V b b + | V O U T ( C L )| ) * ln (1 + )
2 * RL | V O U T ( C L )|
V V
V IN GND
bb
Vbb
high
IN PROFET OUT
GND
V
bb
Page 11 2004-01-27
BTS 4141N
K/W K/W
10 1
Z thJA
10 1
ZthJA
D=0,5
D=0,5 D=0,2
10 0 D=0,2 D=0,1
10 0
D=0,1 D=0,05
D=0,05 D=0,02
D=0,02 D=0,01
D=0,01 D=0
D=0
10 -1 -5 -4 -3 -2 -1 0 1 2 4 10 -1 -5 -4 -3 -2 -1 0 1 3
10 10 10 10 10 10 10 10 s 10 10 10 10 10 10 10 10 s 10
tp tp
300 300
mΩ mΩ
125°C
RON
RON
200 200
150 150
25°C
100 100
-40°C
50 50
0 0
-40 -20 0 20 40 60 80 100 °C 140 0 5 10 15 20 25 30 35 40 V 50
Tj Vbb
Page 12 2004-01-27
BTS 4141N
100 120
µs
µs 15...30V
15V
30V 80
ton
toff
60
60
40
40
20
20
0 0
-40 -20 0 20 40 60 80 100 °C 140 -40 -20 0 20 40 60 80 100 °C 140
Tj Tj
2 4
V/µs
V/µs
1.6
3
dton
dtoff
-dV
dV
1.4
2.5
1.2
30V
1 2
0.8
1.5
15V
0.6 30V
1
0.4 15V
0.5
0.2
0 0
-40 -20 0 20 40 60 80 100 °C 140 -40 -20 0 20 40 60 80 100 °C 140
Tj Tj
Page 13 2004-01-27
BTS 4141N
Typ. initial peak short circuit current limit Typ. initial short circuit shutdown time
IL(SCp) = f(Tj) ; Vbb = 20V; tm = 150µs toff(SC) = f(Tj,start) ; Vbb = 20V
2 300
A
ms
1.6
I L(SCp)
t off(SC)
1.4
200
1.2
1 150
0.8
100
0.6
0.4
50
0.2
0 0
-40 -20 0 20 40 60 80 100 °C 140 -40 -20 0 20 40 60 80 100 °C 140
Tj Tj
Typ. initial peak short circuit current limit Typ. input current
IL(SCp) = f(Vbb); tm = 150µs IIN(on/off) = f(Tj); V bb = 15 V; VIN = low/high
VINlow ≤ 1,8V; VINhigh = 5V
2 60
-40°C
A
µA
1.5 25°C
I L(SCp)
40 on
I IN
1.25
125°C
1 30 off
0.75
20
0.5
10
0.25
0 0
0 5 10 15 20 25 30 35 40 V 50 -40 -20 0 20 40 60 80 100 °C 140
Vbb Tj
Page 14 2004-01-27
BTS 4141N
60 -40°C 3
on
µA 25°C V
off
VIN(th)
40 125°C 2
IIN
30 1.5
20 1
10 0.5
0 0
0 2.5 5 7.5 10 12.5 15 V 20 -40 -20 0 20 40 60 80 100 °C 140
VIN Tj
Typ. input threshold voltage Typ. standby current
VIN(th) = f(Vbb) ; Tj = 25°C I bb(off) = f(T j) ; V bb = 32V ; VIN ≤ 1,2 V
3 22
µA
V
18
on
16
V IN(th)
Ibb(off)
2
off 14
12
1.5
10
1 8
0.5 4
0 0
0 10 20 30 V 50 -40 -20 0 20 40 60 80 100 140
°C
Vbb Tj
Page 15 2004-01-27
BTS 4141N
µA
J
3
IL(off)
EAS
2.5
1.5
1
1.5
1
0.5
0.5
0 0
0.2 0.4 0.6 0.8 1 A 1.4 -40 -20 0 20 40 60 80 100 °C 140
IL Tj
400
µs
300
td(Vbbon)
250
200
150
100
50
0
0 5 10 15 20 25 30 35 40 V 50
Vbb
Page 16 2004-01-27
BTS 4141N
Timing diagrams
IN IN
Vbb
V
OUT
IL
IL
t
t d(Vbbon)
t
Figure 2a: Switching a resistive load, Figure 2c: Switching an inductive load
turn-on/off time and slew rate definition
IN IN
V OUT
VOUT
90%
t on dV/ dtoff
dV/dton t off
10%
IL
IL
t
t
Page 17 2004-01-27
BTS 4141N
Figure 3a: Turn on into short circuit, Figure 3b: Short circuit in on-state
shut down by overtemperature, restart by cooling shut down by overtemperature, restart by cooling
IN IN
V OUT V OUT
I I I
L L(SCp) L
I I
L(SCr) L(SCr)
t t
IN IN
Vbb
VOUT
10,5V
Vout
TJ
t
t t d(Vbbon) t d(Vbbon)
Page 18 2004-01-27
BTS 4141N
B
4 +0.2
15˚ max
acc. to
DIN 6784
7 ±0.3
3.5±0.2
0.5 min
1 2 3
4.6
0.25 M A 0.25 M B
GPS05560
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee
of characteristics.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices please contact your
nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide
(see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the
types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 19 2004-01-27
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