APPENDIX 5.

Al
CONVERSION FROM HYBRID 7T CIRCUIT TO
NORMAL 7T CIRCUIT
5.Al.l Method of Conversion
The hybrid 7T circuit of Fig. A2 can be converted to the normal7T network
of Fig. Al by equating the Y parameters of the two circuits as shown below.
The conventions adopted in these calculations for the positive directions
of currents and voltages at the terminals of the networks are indicated in
Figs. Al and A2.
For the initial calculations the circuit elements are represented as simple
admittances (E, Y2, etc.). These admittances are then expressed in the form
G + jwC for the remaining calculations.
The values of Yl and Y2 in Fig. Al are not calculated completely, since
the quantities required for unilateralized amplifier design are the total input
and output admittances of the transistor in the unilateralized condition
given by Yl +
Y3 and Y2 +
Y3 respectively. These quantities are evaluated
completely.

5.Al.2 Y Parameters of 7T Circuit

This section refers to Fig. AI, page 197.
Yn = h/ Vl = Yl + Y3
(V2 = 0)
Y22 = 12/V2 = Y2 + Y3
(Vl = 0)
Y21 = h/Vl = Gm - Y3
(V2 = 0)
Y12 = h/ V2 = - Y3
(Vl = 0)
5.Al.3 Y Parameters of Hybrid 7T Circuit
This section refers to Fig. A2, page 197.
h h
Yn = Vl = (h/Ybb') + [h/(Yb' e + Yb' c)]
(V2 = 0)
_
- ,
+
Ybb'(Yb' e
,
Yb' c)
, .... (5)
Ybb ++
yb e yb c
Yo _ h _ + Yb' C(Ybb' + Yb' e) + l/(Ybb'+ Yb' e)
22 - v
r2
- Yee yb , e + ybb , + yb , e gm [1/('ybb + yb ,e)] + (I'1 yb e)
(Vl = 0)
_ Y
- ee
+ Yb' e(Ybb'
, +
+ Yb'' e + gm)
, .... (6)
yb c ybb + yb e .
199
APPENDIX TO CHAPTER 5

Y21 = 12 = (gm - Yb' C) Vb' e

VI VI
(V2 = 0)
(gm - Yb'C)VI l/(Yb'e Yb'C) +
VI (I/Ybb') [I/(Yb' e +Yb' c)] +
Ybb'(gm - Yb' C)
= Ybb' +
Yb'e Yb'C +
Y12 = h = _ [I/(Ybb' +
Yb' e)]Ybb'
V2 (I/Yb' C) +[l/(Ybb' Yb' e)] +
(VI = 0)
Yb'eYbb'
Yb'e +
Ybb' + Yb'e
5.Al.4 Calculation of Values of 7T Circuit
From expressions (4) and (8):
__
y:a- y _ Yb'eYbb'
12-, , ,
yb e + ybb + yb c

From expressions (I), (5) and (9):

Yl = Yn - Ya
Ybb'(Yb' e + Yb' e) Yb'eYbb'
Ybb' +
Yb'e Yb'e + Yb'e + Ybb' + Yb'e
Yb'eYbb'
-
Ybb' + Yb'e + Yb'e
From expressions (2), (6) and (9):
Y2 = Y22 - Ya
_ + Yb' e(Ybb' + Yb' e + gm) _ Yb' c Ybb'
- Yce yb , c + ybb , +'yb e yb ,c + ybb ' + yb ' e
= Yee T,
I Yb' C(Yb'e
,
+ gm) ,
yb c + ybb + yb e
From expressions (3), (7) and (9):
Gm = Y21 + Ya
= ybb '(gm - yb ,c) . + yb " c ybb .
Ybb' +Yb' e +
Yb' c Ybb' +
Yb' e + Yb' e
Ybb' gm
Ybb' +
Yb'e + Yb'e
Expres:sions (9), (10), (11) and (12) completely describe the network of
Fig. At. These expressions will now be used to obtain the formulae required
for ampliifier design.
5.Al.5. Calculation of Feedback Impedance .
The feedback admittance Y3 determines the values of the external feed-
back components required to unilateralize the network. It is most con-
venient to state the value of Y3 in terms of a series resistance-capacitance
combination (R3 and C3) as shown in Fig. A3.
The values of R3 and C3 are obtained by inverting the feedback admittance
Y3 (expression (9)) to obtain the corresponding feedback impedance Z3 and
inserting the hybrid 7T circuit admittance values in the form g jwc. +
, ,
y: _ yb eybb
3 - Yb'e + Ybb' + Yb'e
Z _ yb ,e + ybb '+ yb 'e
3 - , I
yb eYbb
gb' e + jwCb' e + gbb' + gb' e + jwCb' e
= (gb' e + jWCb' e)gbb' -
gb' e(gb' e + gbb' + gb' c) + W Cb' e(Cb' e + Cb' c)2

- (gb' e + W Cb' e )gbb'

2 2 2

- jw [Cb' e(gb' e + gbb' + gb' c) - gb' e(Cb' e + Cb' c)]

(gb' e + W Cb' e )gbb'
2 2 2

The real part of expression (13) gives the value of the feedback resistance R3.
:. R = gb'e(gb'e + gbb' + gb'e) + W2Cb'e(Cb'e + Cb'e) .... (14)
3
(gb' e2 + W Cb' e )gbb'
2 2

Taking typical values of 0·4 micro mho of gb' e and 10 pF for Cb' e, the term
gb' e2 in the denominator could be ignored at frequencies above say 80 kc!sec,
where the error produced would be about 1 per cent. This error would
decrease rapidly with increasing frequency.
Making this approximation, and ignoring gb' e compared with gbb' + gb' e
the above expression becomes:
R3 = _1_, (1 + Cb:e) + gb' e[l + (g?' e!gbb')]
gbb Cb e W2Cb e2

R 3 = rbb ' (1 + Cb'e)

C be'
1
+ +, (rbb'!rb'e)
2C' 2rbew be
The value of the feedback capacitance C3 is found from the imaginary part
of expression (13). Again assuming that gb' e2 ~ W2Cb'e2, and ignoring gb' e
compared with gbb' +
gb' e, and Cb' e compared with Cb' e, the value of C3
is given by:
. 1
-J-=
- jW[Cb'e(gb'e +
gbb') - Cb'egb'e]
WC3 gbb' W2Cb' e2
Cb'e
C3 = [1 + (gb' e!gbb')] - (Cb' e!Cb' e)(gb' e!gbb')
Cb'e
C3 = [1 + (rbb'!rb'e)] - [(Cb'e!Cb'e)(rbb'/rb'e)]
201
5.Al.6. Calculation of Mutual Conductance
The mutual conductance Gm in Figs. Al and A3 can be obtained from
expression (12), as follows:
G _ Ybb' gm
m - Ybb' Yb'e +
Yb'C +
gbb' gm
gbb' + gb' e + gb' c + jW(Cb' e + Cb' c)
For unilateralized operation only the modulus of this quantity is required.
Also, gb' C may be ignored compared with gbb' + gb' e.
G - gm
m- v{[l + (gb' e/gbb')J2 + [(W/gbb')(Cb' e + Cb' c)]2}
G - gm
m- v{[l + (rbb' /rb' e)J2 + [rbb' w( Cb' e + Cb' c)]2}
5.Al.7. Calculation of Input Resistance
In the unilateralized condition (see Section 5.3.3) the input admittance of
the transistor alone is Yl +
Y3 (see Fig. AI). Similarly the output admittance
is Y2 + Y3. The quantities Yl and Y2 need not be evaluated independently
therefore if unilateralization is employed. From expressions (1) and (5) the
total input admittance in the unilateralized condition is given by:
y
11-
_ y
1
+ y;3-_ ,
+
Ybb'(Yb'e
,
Yb'c)
,
+ +
ybb yb e yb c
_ gbb'[gb' e + gb' c + jW(Cb' e + Cb' c)]
- gbb' + gb'e + gb'C + jW(Cb'e + Cb'c)
Ignoring gb' c which is small compared with gb' e :
y _ gbb'gb'e +jwgbb'(Cb'e + Cb'c)
11 - gbb , + '+'
gb e JW (C'b e + Cb' C)
_ gbb'gb' e(gbb' + gb' e) + W2gbb'(Cb' e + Cb' c)2 + jwgbb'2(Cb' e + Cb' c)
- (gbb' + gb' e)2 + w Cb' e + Cb' c)2 2(

.. , .(22)
Taking the real part of this expression, the input conductance G11 is given by

G11 = gbb'gb' e(g~b~ ~b' e) + + ~2 g~b'( Cb' e +2Cb' c)2 .... (23)
(gbb gb e)2 + + (Cb e + Cb'C)
W

The reciprocal of this quantity gives the input resistance Rin

R. _ (gbb' gb'e)2 + W2(Cb'e +Cb'c)2 +
lU - gbb'gb'e(gbb' gb'e) +
w2gbb'(Cb'e+ Cb'c)2 +
= -.!, + , , ~bb' + g:' e , 2 •... (24)
gbb gb egbb + gb e2 + W (Cb e + Cb'c)
 5.Al.8. Calculation of Input Capacitance
The input capacitance is obtained from the imaginary part of expression
(22) which is equal to the input susceptance jwCin .
. C. _ jwgbb'2(Cb'e + Cb'c)
JW III - (gbb' + gb' e)2 + w2( Cb' e + Cb' c)2

. Cb'e + Cb'c
., Cin = [1 + (gb' e/gbb')]2 + w2( Cb' e + Cb' c)2/gbb'2

C- _ Cb'e + Cb'c
m - [1 + (rbb' /rb' e)]2 + w2( Cb' e + Cb' c)2rbb'2

5.Al.9. Calculation of Output Resistance

In the unilateralized condition the output admittance of the transistor
alone is equal to Y2 + Y3 (see Fig. AI).
From expressions (2) and (6):
v.l 22 -_ .lv 2 + .lv 3 --:r:ce + Yb'C(Ybb'
, + Yb'e
, + ,gm)
yb c + ybb + yb e

_ + (gb' c + jwCb' c)(gbb' + gm + gb' e + jwCb' e)

- g ce gbb ",.+ gb e + gb c + JW(C'b e + Cb' c)
_ + gb' C(gbb' + gm + gb' e)(gbb' + gb' e + gb' c) +
- gce (gbb' + gb'e + gb'c)2,+ W2(Cb'e + Cb'c)2

+ W2[Cb'cgm(Cb'e + Cb'c) + Cb'e2gb'c + Cb'C2(gbb' + gb'e)] +

(gbb' + gb' e + gb' c)2 w2( Cb' e +
Cb' c)2 +
+j Cb' C(gbb' + gb' e)(gbb' + gm + gb' e) - Cb' egb' c(gm - gb' c) +
w (gbb' + gb'e + gb'c)2 + W2(Cb'e + Cb'c)2
W2Cb'cCb' e(Cb' e + Cb' c)
(gbb' + gb' e + gb' c)2 +
W2(Cb'e + Cb' c)2

Taking the real part of this expression and ignoring gb' c in comparison with
gbb' + gb' e, and Cb' c in comparison with Cb' e, and simplifying, the output
conductance G22 is given by:
G - g + ' + gb' cgm(gbb' + gb'e) + W2Cb'dCb' egm + Cb' c(gbb' + gb' e)]
22 - ce gb c ('gbb + gb ')2
e + W 2C'be 2
'" .(29)
Taking typical values of 1,000 pF for Cb' e, 10 pF for Cb' c, 39 millimho for gm,
14 millimho for gbb', and 0·7 millimho for gb'e, the term Cb'C(gbb' + gb'e) is
equal to only about 0·4 per cent of Cb' egm. Therefore, ignoring
Cb' C(gbb' + gb' e), the output resistance Rout is given by:

_1 __ G _ g + ' + gb' c(gbb' + gb' e) + W2Cb'cCb' e (30)

R out - 22 - ce gb c gm - ( , + ')2 + 2C' 2 ....
gbb gb e W be
203
5.Al.lO. Calculation of Output Capacitance
The output capacitance is obtained from the imaginary part of expression
(28), which equals the output susceptance jwCout.
Cb' C(gbb'+ gb' e)(gbb' + gm + gb' e) - Cb' egb' c(gm - gb' c) +
+ W2Cb'cCb'e(Cb'e + Cb'c)
(gbb' + gb' e + gb' c)2 + w Cb' e + Cb' c)2
2(

Neglecting gb' c compared with gm and gbb' + gb' e, and Cb' c compared with
Cb' e, and simplifying:
C - C' + gm[Cb'c(gbb' + gb'e) - Cb'egb'c]
out - bc ('gbb + gb ')2
e + 2C'be 2
W

Taking typical values of 10 pF for Cb' c, 1,000 pF for Cb' e, 14 millimho for
gbb', 0·7 millimho for gb' e, and 0·4 micromho for gb' c, the term Cb' egb' c is
less than 0·3 per cent of Cb' c(gbb' +gb' e). Therefore, ignoring Cb' egb' c, the
output capacitance is given by:
_ ' [
+ gm (gbb , +gbb' + gb' e ]
Cout - Cb c 1 e + 2C'be 2
gb ')2 W
 APPENDIX 5.A2
CONDITIONS FOR MINIMUM LOSS OF POWER GAIN DUE
TO DISSIPATION IN UNILATERALIZING NETWORK
To reduce to its simplest form the problem of finding the conditions for
minimum loss of power gain due to dissipation in the external feedback path,
the transistor may be represented by the circuit shown in Fig. A4. This
figure is the same as Fig. 5.5, except that the feedback elements are converted
from a series into a parallel combination of resistance and capacitance.
The phase-changing transformer can be regarded as 10ssless, since its
actual loss is taken into account when designing the interstage coupling.
In the uni1ateralized condition the admittance of the external feedback
path is n times that of the internal feedback path as shown (where n is the
transformer ratio). Also, in this condition, the input admittance of the
amplifier is the same for any value of load across the output terminals, and
can be evaluated by considering the case of a short-circuit on the output
terminals.
Therefore, the input admittance is given by:
Yin = gl + ga + nga + jW(Cl + Ca + nCa)
Similarly, the output admittance is given by:
Yout = g2 + ga + (gain) + jW[C2 + Ca + (Cain)]
The input and output capacitances are taken up in the resonant circuits
which are connected to the input and output terminals, so these capacitances
can be ignored. Flence:
Input Power = V12(gl + ga + nga)
For maximum power transfer the load conductance gL is made equal to the
output conductance [g2 + ga + (gain)].
Therefore:
Output Power = (GmVl)2.
2 g2
1 ( I
+ ga + ga n)
Power Gain G = Gm2 • 1
4 [g2 + ga + (galn)](gl + ga + nga)
Differentiating this expression with respect to n, and equating to zero to
obtain the condition for maximum power gain yields the result:
n =Jgl +ga
g2+ga
or n =JRout
Rin
 APPENDIX 5.A3
INTERSTAGE COUPLING
5.A3.1. Conditions for Maximum Power Transfer
Consider Fig. AS, which shows the output circuit of an amplifier stage
together with a resonant circuit coupled to a load R2.
Cl = amplifier output capacitance Known
Rl = amplifier output resistance Known
Ca = added tuning capacitance Unknown
L = inductance to resonate with Cl + Ca Unknown
Ra = coi110ss resistance (= QowL) Unknown
R2 = load resistance Unknown
Qo = undamped coil Q Assumed known
Qw = working Q required Known
x = reactance of L at Ir = reactance of total tuning C Unknown
Zn = dynamic impedance of total circuit at resonance Unknown
To find R2 and x for max. gain and given bandwidth:
Qw = Zn = (RIQox/Rl + QOX)R2 !.
X (RIQox/Rl + Qox) + R2 x
Solving expression (34) for x:
RIR2( Qo - Qw)
x=------
(Rl + R2)QOQw
Power in load, P = y2 = J2(Qwx)2
R2 R2
(where Y = voltage across load R2).
Substituting expression (35) for x,
P = J2Qw2 [RIR2(QO - Qw)] 2
R2 (Rl + R2)QOQw
Differentiating with respect to R2, and equating to zero to obtain condition
for max. power P yields result:
R2=Rl .... (36)
Therefore for max. power gain and fixed bandwidth the load resistance R2 is
made equal to the source resistance Rl irrespective of the value of the coil
loss resistance Ra.

5.A3.2. Tuning Inductance Required for given working Q

Inserting R2 = Rl in expression (35):
Rl Qo - Qw
x=-----
2 QoQw
206
 APPENDIX 5.A3

From this formula the required total tuning capacitance (Cl + Ca) and
the inductance L are easily obtained.
L=~
27rfr
where fr = resonant frequency.
5.A3.3. Coil Insertion Loss
To obtain coil loss :
Volts across load [with coil Q = 00] = Vmax. = I~l

with coil Q = Qo )
Volts across load ( d. . = Vw = IQwx
an CircUltQ = Qw
Vw 2Qwx
.. Vmax. =~
Substitute expression (37) for x:
Vw _ 2Qw Rl Qo - Qw
Vmax. - Rl 2 Qo Qw
Qo - Qw
Qo
Power output with practical coil = (Qo - Qw)2
Power output with perfect coil Qo

Insertion loss = 20 log ~- dB

Qo - Qw

From this formula Fig. 5.11, showing dB coil loss against Qo may be
Qw
 APPENDIX 5.A4
CALCULATION OF INPUT AND OUTPUT IMPEDANCE
OF APPROXIMATE HIGH FREQUENCY
EQUIVALENT CIRCUIT
This section refers to Fig. A6, page 198.

5.A4.1. Input Impedance with Open-circuited Output (Zln, ole)

From Fig. A6;

5.A4.2. Input Impedance with Short-circuited Output (Zin, sic)

From Fig. A6 [where (reactance of Ce) ~ Ybb'] :

¥'in. sic = ieYe + (ie - rxie)Ybb'

:. Zln, sic = Ye + (1 - rx)Ybb'

5.A4.3. Output Impedance with Open-circuited Input (Zout. ole)

From Fig. A6:
Zout, ole = Ybb' - jxCe where xCe = reactance of Ce
, . 1
=Ybb -J-
wCe

5.A4.4. Output Impedance with Short-circuited Input (Zout, sic)

From Fig. A7 :
. . i2
V = leYe -J-
wCe
=I YeYbb' . I - rxie
Ye + Ybb' - J wCe

=I YeYb~ _ jI 1 - rx[Ybb' j(Ye + Ybb')]

Ye + Ybb' wCe

YeYbb' . 1 [ rx]
Zout, sic = Ye +
Ybb; - J wCe 1 - 1 + (YejYbb')
208
 APPENDIX 5.A4

For very high values of 'bb' or very low values of 'e, this expression tends
to:
Zout sic ='e - j _1_ (1 - ex) '" .(45)
• wCe

Inserting ex = -
1 +J W .t/ ) Wccx
in expression (44):

Z t I = 'e'bb~ _ j _1_ + j _1_ 1 exoL~ - j(w/wecx)]

ou,sc 'e + 'bb' wCe wCe 1 +~ [1 + (W2/Wecx2)]
'bb

5.A4.5. Calculation of Output Impedance with Complex Source Impedance

From Fig. A8:
1= ie + ib
= · + Ie. 'e + 's +
Ie ,
jxs
'bb

_. ('bt' +'e
-Ie
'bb
, +'s + J-,
. xs)
'bb

i2 = 1- exie

= · ('bb' + 'e + 'a +.J -,

Ie , Xa - ex )
'bb 'bb
. exo
smce ex = 1 + J.(W / Wecx)

. = . ['bb' + 'e + 'a +.J -

12 Ie -----
Xs
- 1 - j(w/wea-)]
exo -----
'bb' 'bb' +
1 (w2/wecx2)

= · {'bb' + 'e + 's

Ie ----- - ----- exo + J. [- Xs + -----
CXO(w/wecx)]}
'bb' 1 + (w2/wecx2) 'bb' 1 2 + (w /wecx )
2

V = ie['e + 's + jxs] - j _1_ ie X

wCe

X {_'b_b_' _+_'e_+_'_s ex_o__ + j [_x_s + _ex_o_(w_/_w_e_cx)_] }

'bb' 1 + (w2/Wecx2) 'bb' 1 + (w2/wecx2)
V
Zout = - = A
I
+B
where A = 'e + 's + jxs
[('bb' + 'e + 's)/'bb'] + j(xs/'bb')
209
 APPENDIX TO CHAPTER 5

+ rs + jxs){[(rbb' + re + rs)/rbb'] - j(xS/rbb')}

(re
[(rbb' + re + rS)/rbb'J2 + (xS/rbb')2

{ere + rs)[(rbb' + re + rs)/rbb'] + (xS2/rbb')} + jxs

[(rbb' + re + rs)/rbb']2 + (xS/rbb')2

This term is the impedance of the left-hand part of Fig. A8 (Le. rs, Xs, re
and rbb'), and has a maximum value of rbb'.
B = _ . _1_ {1 _ ao/[l + (w2/Wca2)] - j[ao(w/Wca)]/[1 + (w2/Wca2)]
J wCc [(rbb' + re + rs)/rbb'] + j(xs/rbb')

=_j_1_ 1
wCc

. 1 1
-J-
wCc

1 { 0:0/[1 + (W2/wca2)](1 /rbb') }

= wCc [(rbb' + re + r3)/rbb']2 + [xS/rbb'J2 X

X {w~a [rbb' +'e + 's].+ xs} -

This term, (B), is the effective impedance of the collector circuit, which
includes the collector capacitance and the o:ie current generator.
The source reactance Xs may be either positive (for inductive source) or
210
negative (for capacitive source). When Xs is negative the real part of term B
becomes negative when Xs exceeds
wjWca(rbb' + re + rs).
Since term B is the major part of the transistor output impedance, oscillation
may occur if the transistor is connected to a high Q inductive load and to a
capacitive source impedance.