THE HONG KONG

POLYTECHNIC UNIVERSITY_________________________________________________ ___

Department of Electrical Engineering

TUTORIAL OF INTRODUCTION TO POWER ELECTRONICS

(1) Fig. 1 shows a circuit diagram with a MOSFET, T, connected to
iin
a voltage source with the voltage, Vin, and a resistive load, R. +
Assuming all components are ideal except the on-state resistance Vin T R Vo
-
of T, Rds, is 0.1Ω, calculate the conduction loss of T. Duty ratio
of the gate signal of T is 0.4. Switching frequency is 100kHz.
Resistance of R is 1Ω. Vin is 10V. Fig. 1.

If the MOSFET is replaced by an IGBT with 1V of its on-state voltage, Von, what is the
conduction loss of the IGBT?

ANS:

When T is on:
Vin 10
iin( on)    9.091A
R  Rds 1  0.1
When T is off iin(off) is zero.
Rms value of iin is:

 i  i 
T DT T DT
 dt   
2 2 2 2
iin dt in( on) in( off ) dt iin( on) dt
iin( rms)  0
 0 DT
 0

T T T
iin( rms)  (9.091) 2 D  9.0912 0.4
iin( rms)  5.75 A
Conduction loss of the MOSFET, T is:
PT  iin( rms) Rds
2

PT  5.75 0.1  3.306W

2

If an IGBT is replaced by a MOSFET with Von = 1V, the current of the IGBT when on is:
V  Von 10  1
iin( on)  in   9A
R 1
Average current of IGBT is:
Iin  iinonD  90.4  3.6 A
The conduction loss of the IGBT is:
PT  IGBT   Von Iin
PT  IGBT   13.6  3.6W

EE4211 Advanced Power Electronics Page 1

 THE HONG KONG
POLYTECHNIC UNIVERSITY_________________________________________________ ___
Department of Electrical Engineering

(2) A MOSFET is installed on a heat sink as shown in Fig. 2.

The junction-to-case thermal resistance and the case-to-
sink thermal resistance of the MOSFET are 1.6°C/W and
0.5°C/W, respectively. Power loss of the MOSFET is 4W.
If the maximum operating temperature of the MOSFET is IRF540N

60°C and the temperature of the ambient environment is

30°C, calculate the minimum thermal resistance of the heat
sink.
Fig. 2.
ANS:
R j c  1.6C / W
Rch  0.5C / W

The change of temperature of the junction of the MOSFET is:

T  T j  Ta  Ploss R j c  Rch  Rha 
60  30  41.6  0.5  Rha 
The thermal resistance of the heat sink, Rh-a is:
Rha  5.4C / W

EE4211 Advanced Power Electronics Page 2