EC-8261 ELECTRONIC DEVICES

TWO MARK QUESTIONS AND ANSWERS

PREPARED BY

Mrs.M.Madhumalini, AP/ ECE

 UNIT – I

SEMICONDUCTOR DIODE

1. Define semiconductor.
A semiconductor is an element with electrical properties between those of a conductor
and those of an insulator. The best semiconductor has four valance electrons.

2. Write the two types of Extrinsic Semiconductors.

1. N – Type semiconductor.
2. P – Type Semiconductor.

3. Define N – Type Semiconductor.

Silicon that has been doped with a pentavalent impurity is called an n type
semiconductor, where n stands for negative.

4. Define P – Type Semiconductor.

Silicon that has been doped with a trivalent impurity is called a P type semiconductor,
where n stands for Positive.

5. Give the value of Charge, Mass of an electron.

1. Charge of an electron – 1.6 x 10 -19 coloumbs.
2. Mass of an electron - 9.11 x 10 -31 Kgs.

6. What is doping?
Process of adding impurity to a intrinsic or pure form of semiconductor atom is doping.
The impurity is called dopant.

7. Identify the majority and minority charge carriers in a N-type Semiconductor.

Majority carrier: Electron and
Minority carrier: Holes.

8. Identify the majority and minority charge carriers in a P-type Semiconductor.

Majority carrier: Holes and
Minority carrier: Electron.

9. Define P-N junction.

When P-type and N-type are suitably joined together by the conducting surfaces of
these two semiconductors is called P-N junction

10. Define forward biasing.

When a diode is forward biased the current is produced because the holes in the P-
region and electron from N-region moves towards the junction. The depletion region formed
will be very small hence recombination occurs and current will be produced.

11. Define reverse biasing.

When a reverse biased voltage is given an electron from N-region and holes from P-
region moves away from the junction, hence the depletion region formed is very high and
hence a small current will be produced due to minority carriers.

12. Define reverse resistance.

 The resistance offered by the diode in its reversed biased condition is called reverse
resistance.

13. Define forward resistance

The resistance offered by the diode in its forward biased condition when a voltage is
given is called forward resistance.

14. Define transition capacitance.

The P-N region on either of the dielectric media act as the plates hence we have
components for making a plate capacitor the junction capacitance is called transition
capacitance.

15. Define power rating.

The power rating of a diode is defined as the maximum value of power that can be
dissipated without failure if Vf is the forward biased voltage and If is the forward biased
current.
Pd= Vf x If

16. Define diffusion capacitance.

This capacitance effect is present when the junction is forward biased it is called
diffusion capacitance.

17. Define drift velocity and drift current.

When an electric field is applied to the material the charge carriers moves in the
opposite direction and produce current this result is drift current and net average velocity
is called drift velocity.
18. Define transition time.
Only after the minority carriers are swept of the junction the diode voltage begins to
reverse and the diode current decreases exponentially the time which elapses between and
when the diode normally recovered is the called transition time.
19. Define storage time.
When the conduction diode is reverse biased the voltage doesn’t become zero.
Immediately up to time t1 the diode is conducting in the forward direction. The time
interval t = t2 –t1 during which the stored minority carriers reduces to zero is called storage
time (Ts).
20. What are valence electrons?
Electron in the outermost shell of an atom is called valence electron.
21. What is forbidden energy gap?
The space between the valence and conduction band is said to be forbidden energy gap.

22. What are conductors? Give examples?

Conductors are materials in which the valence and conduction band overlap each other
so there is a swift movement of electrons which leads to conduction. Ex.: Copper, silver.

23. What are insulators? Give examples?

Insulators are materials in which the valence and conduction band are far away from
each other. So there is no movement of free electrons and thus no conduction.
Ex glass, plastic.

24. Draw the energy band structure of an Insulator.

In Insulators there is a wide forbidden energy gap. So movement of valence
electron from valence to conduction band is not possible.
25. What is Intrinsic Semiconductor?
Pure form of semiconductors are said to be intrinsic semiconductor.
Ex: silicon, germanium.
26. Give the energy band structure of Semi conductor.
In Semiconductors there is a small forbidden energy gap. So movement of valence
electron from valence to conduction band is possible if the valence electrons are supplied
with some energy.

27. Give the energy band structure of conductor.

In conductors there is no forbidden energy gap, valence band and conduction and
overlap each other. So there is a heavy movement of valence electrons.

28. What is Extrinsic Semiconductor?

If certain amount of impurity atom is added to intrinsic semiconductor the resulting
semiconductor is Extrinsic or impure Semiconductor
29. Give the energy band structure of n- type semiconductor.

30. Give the energy band structure of P- type semiconductor.

31. What is Reverse saturation current?
The current due to the minority carriers in reverse bias is said to be reverse
saturation current. This current is independent of the value of the reverse bias voltage.

32. What is meant by biasing a PN junction?

Connecting a PN junction to an external voltage source is biasing a PN junction.

33. What is barrier potential?

Because of the oppositely charged ions present on both sides of PN junction an
electric potential is established across the junction even without any external
voltage source which is termed as barrier potential

34. What is depletion region in PN junction?

The region around the junction from which the mobile charge carriers (electrons
and holes) are depleted is called as depletion region. Since this region has immobile
ions, which are electrically charged, the depletion region is also known as space charge
region.

35. What is the static resistance of a diode?

Static resistance R of a diode can be defined as the ratio of voltage V across the
diode to the current flowing through the diode.
R = V/ I
Where
R - Static resistance of a diode
V - Voltage across the diode
I - current across the diode

36. Define dynamic resistance.

Dynamic resistance of a diode can be defined as the ratio of change in voltage
across the diode to the change in current through the diode.
r = ∆V / ∆ I
Where,
r - Dynamic resistance of a diode.
∆ V - change in voltage across the diode.
∆ I - change in current through the diode.

37. Define energy gap.

The energy required to break a covalent bond in a semi conductor is known as energy gap.

38. Define diffusion current.

A concentration gradient exists, if the number of either electrons or holes is greater in
one region of a semiconductor as compared to the rest of the region. It has been observed
that when the concentration gradient of carriers tend to move from the region of higher
concentration to the region of lower concentration. This process is called diffusion and the
electric current produced due to the process is known as diffusion current.

39. Give the expression for drift current density due to electron.
Jn = q n µnE
Where,
Jn - drift current density due to electron
q- Charge of electron
µn - Mobility of electron
E - Applied electric field
 40. Define Mass – action law.
Under thermal equilibrium the product of free electron concentration (n) and
hole concentration (p) is constant regardless of the individual magnitude.
n.p = ni2
41. Explain the term Knee voltage and breakdown voltage with respect to diodes.
Knee voltage.
The forward voltage at which the current through the PN junction starts increasing
rapidly is known as knee voltage. It is also called as cut-in –voltage or threshold voltage.
Breakdown voltage:
The reverse voltage at which the PN junction breakdown occurs is called as breakdown
voltage.

42. Give the diode current equation.

I = I0[ e(V/ηvT)- 1]
Where
I = Forward (or reverse) diode current.
I 0 = Reverse saturation current at temperature T.
V = Diode voltage.
V T = Threshold voltage
T = Temperature of diode junction.

43. Draw V-I Characteristics of a PN junction Diode.

IF

VR VB VF

IR

44. Write the application of diode.

1. As rectifiers or power diode in DC power supplies.
2. As signal diodes in commutation circuits.
3. As zener diodes in voltage stabilizing circuits.
4. As a switch in logic circuits

PART-B

1. Explain in detail about Semiconductors.

2. (i) Explain the current components in a PN junction diode. (ii) Derive the diode current
equation.
3.With a neat diagram explain the working of a PN junction diode in forward bias and reverse
bias and show the effect of temperature on its V-I characteristics.
4. Explain the switching characteristics of PN Junction diode.
5. Explain drift and diffusion current.
6. Derive the diode current equation of PN junction diode.
7. Draw and explain the energy band diagram of open circuited PN junction.
8. Describe the switching characteristics of PN junction diode.
9. Draw and explain the energy band diagram of conductor, insulator and semiconductor
10. Derive the dynamic and reverse saturation current in terms of diode current
 UNIT – II
BIPOLAR JUNCTION

1. What are transistors?

Transistors  Three terminal devices that can function as electronic switches or
as signal amplifiers. They are current operated devices with low input impedance and
high output impedance.  Since it transfers current from a low to a high resistance
region, it was named bipolar.

2. What is BJT?
BJT  Bipolar Junction Transistor.
 Since the operation of a BJT depends on the interaction of both the majority and
minority carriers it is named bipolar.
 The transistor is used as an amplifier and for an amplifier to operate properly, a
steady level of current and voltage should be established.
 The steady state voltage and current in which the amplifier is operated is called
operating point or quiescent point.
 The method of establishing the operating point is called biasing.

3. Why an ordinary transistor is called bipolar?

The operation of the transistor depends on both majority and minority carriers. So it
is called bipolar device.

4. Why BJT is called current controlled device?

The output voltage, current, or power is controlled by the input current in a
transistor. So it is called the current controlled device.

5. Define Early Effect.

A variation of the base-collector voltage results in a variation of the quasi-neutral
width in the base. The gradient of the minority-carrier density in the base therefore
changes, yielding an increased collector current as the collector-base current is
increased. This effect is referred to as the Early effect.

6. What are the conditions for biasing?

The values to be maintained for perfect operation are :
1. Proper dc value of the collector current.
2. Proper value of VBE (0.7V for Si and 0.3V for Ge)
3. Proper value of VCE (1V for Si and 0.5V for Ge) at any instant.
7. Write the two types of BJT.
I) n-p-n Type. II)p-n-p Type.

8. Write the different types of configuration.

The transistors can be connected in a circuit in the following three
configurations.
1. Common base configuration.
2. Common emitter configuration.
 3. Common collector configuration.

9. Draw the input & output characteristics of common base BJT configuration.
3V 2 V
IE mA 1 V = VCB IC 8 mA
4 mA
IE = 2 mA

VEB in volts VCB

Input Characteristics Output characteristics
.
10. Define Operating Point.
The selected point on the load line (which represents the value of IC and VCE
when no signal is applied at the input) around which the output signal fluctuates is
known as quiescent operating point or Q point

11. Among CE, CB, CC which one is most popular. Why?

CE is most popular among the three because it has high gain compared to base
and collector configuration. It has the gain about to 500 that find excellent usage in
audio frequency applications.

12. Compare CE, CB, CC.

13. What are the benefits of h-parameters?

 Real numbers at audio frequencies.
 Easy to measure.
 Can be obtained from the transistor static characteristic curves.
 Convenient to use in circuit analysis and design.
 Most of the transistor manufacturers specify the h- parameters.

14.. Define the four h-parameters.

1. Input impedance 2. Reverse voltage gain 3. Forward current gain and 4. Output
admittance
ΔVBE ΔVBE
1.hie = / VCE=constant, 2.hre = / IB=constant
ΔIB ΔVCE
 ΔIc ΔIc
3. hfe = / VCE=constant and 4. hoe = / IB=constant
ΔIB Δ𝑉𝐶𝐸

15. What is base gummel number?

Total majority charge in base

16. What is emitter gummel number?

Total majority charge in emitter

17. What do you meant by thermal runway?

Due to the self heating at the collector junction, the collector current rises. This causes
damage to the device. This phenomenon is called thermal runway.

18. Why the transistor is called a current controlled device?

The BJT output current is controlled by the input current. So the transistor is called a
current controlled device.

19. Define current amplification factor.

It is defined as the ratio of change in output current to the change in input current at
constant.

20. When does a transistor act as a switch?

The transistor acts as a switch when it is operated at either cutoff region or saturation
region

21. What is biasing?

To use the transistor in any application it is necessary to provide sufficient voltage and
current to operate the transistor. This is called biasing.

22. Explain about the characteristics of a transistor.

Input characteristics: it is drawn between input voltage & input current while keeping
output voltage as constant. Output characteristics: It is drawn between the output voltage
&output current while keeping input current as constant.
 PART-B
1. Write a note on
i. Transistor construction
ii. Voltage gain and current gain expressions for CB Configuration using
transistor hybrid model

2. Explain the input and output characteristics of a common base BJT configuration.
Also draw the characteristics curves.

3. Explain the input and output characteristics of a common emitter BJT

configuration. Also define active, saturation and cut-off regions.

4. Explain the input and output characteristics of a common collector BJT

configuration.

5. (i)The h-parameters of a transistor are given below. The source and load
resistances of a CE amplifier are equal to 2 kΩ.Compute AV, Ri andRO.
(ii)If the common-emitter h –parameters of a transistor are given by hie = 2000 Ω
,hfe = 49, hre = 5.5x10-4 and hoe = 2.5x10-5, find the common base h-parameters
of the transistor.

6. Derive the expression for AI, AV, Ri and Ro for CB amplifier using h-parameter
model.

7. (a).Compare CE, CB and CC configurations.

(b). Explain the switching characteristics of transistor with neat sketch.

8. Derive the expressions of input impedance, output impedance, voltage and current
gain in CE configuration using hybrid model Explain in detail about the transistor
parameters.
9. If the base current of a transistor is 20μA and collector current is 6.38mA,
calculate α and β of a transistor.
10. Draw the Eber-moll model of a transistor
11. Describe the methods of determination of h-parameters from its static Input and
output characteristics
 UNIT – 3
FIELD EFFECT TRANSISTORS
1. What is a FET?
A field effect transistor is a three terminal semiconductor device in which current
conduction is by one type of carriers (either electrons or holes) and is controlled by an
electric field.
2. Which device is called as unipolar device? Why?
The operation of FET depends upon the flow of majority carriers (either the
electrons or holes) only, the FET is said to be unipolar device.

3. What is pinch off voltage?

Drain source voltage above which the drain current become constant is known as
pinch off voltage. The point N is called as pinch off point. Above the pinch off voltage the
channel width becomes narrow and drain current remains constant.

4. What are advantages of FET?

i. It is a voltage control, constant current driven device that is the variation in input
voltage controls the output current.
ii. The input impedance is very high so it allows a high degree of isolation between the
input and the output circuit.
iii. The carriers are not crossing the junction hence the noise is highly reduced.
iv. It has a negative temperature co-efficient of resistance. This can avoid thermal
runaway.
5. Define transconductance.
It is the ratio of change in drain current to the change in gate source voltage at
constant drain source voltage.

6. Define amplification factor.

It is the product of drain resistance (rd) and transconductance (gm).
7. State the two types of MOSFET. State also the modes in which they operate.
i. Types: (a) N- channel MOSFET, (b) P-channel MOSFET
ii. Depletion mode: In this mode the gate is maintained at positive potential with respect
to source.
iii. Enhancement mode: In this mode both the gate and drain are maintained at positive
potential with respect to source.

8. Why the input impedance of FET is more than that of a BJT?

The input impedance of FET is more than that of BJT because the input circuit
of FET is reversing biased whereas the input circuit of BJT is forward biased.
9. What is MOSFET?
The MOSFET is an abbreviation for Metal Oxide Semiconductor Field Effect
Transistor. It is a three terminal semiconductor device similar to FET with gate
insulated from the channel.
10. Difference between FET and BJT
S.no. FET BJT
1. It is a unipolar device. It is a bipolar device
2. It is a voltage controlled device It is a current driven device
3. Its input resistance is very high. Its input resistance is very low
4. It is less noisy. It is comparatively more noisy.
5. No thermal runaway There is thermal runaway
6. High switching speed Lower switching speed.

11. Difference between MOSFET and FET

S.no. FET MOSFET
1. Input impedance is of the order of 10 Input impedance is of the order or
2. It is operated only in depletion mode The depletion MOSFET can be operated
in both depletion mode and
enhancement mode.

3. Gate current is high. Gate current is low.

4. High drain resistance. Higher drain resistance.

12. Name the special features of a FET.

High input resistance
Low noise
Better thermal stability
High power gain
High frequency reponse.

13. Define voltage variable resistance.

FET can also be used in the region before pinch off. FET can also be used as a voltage
control resistor. For this operation the drain to source resistance is controlled by the voltage
VGS. Hence it is called as voltage variable resistor VBR.

14. The noise level in FET is very small. Why?

In FET, for current conduction no junction is involved. The conduction is either
through an N- type or P-type semiconductor. Therefore, the noise level is very small.
15. What are the types of FET?
i. JFET
N- Channel JFET
P- Channel JFET
ii. MOSFET
 (a) Depletion MOSFET
N- Channel Depletion MOSFET
P- Channel Depletion MOSFET
(b) Enhancement MOSFET
N- Channel Enhancement MOSFET
P- Channel Enhancement MOSFET

16. Difference between N- Channel and P- Channel MOSFET .

S.no. N- Channel P- Channel
1. Mobility of electron Mobility of electron (500cm2/v.sec).So
(1300cm2/v.sec).So it is occupied high it is occupied less area.
area.
2. Fast Working. Slow Working.
3. Small device. Big device.
4. It is not easily produced. Enhancement is very popular. It is easily
produced.
5. Packing density is high. Packing density is less.

17. Name the Operating modes of MOSFET.

Depletion mode, Enhancement mode

18. Sketch the dual gate MOSFET.

19. Give the advantages of dual gate MOSFET.

 Reduction of leakage current
 Low noise
 Good power gain
 Better control of short channel effects

20 Give the Application of dual gate MOSFET.

o Used in Automatic gain control
o Used as Mixer in RF circuits
o Used as RF amplifier

21. Give the Advantages of fin FET.

 Better electro static control over the channel
  Reduces short channel effects
 Lower leakage current

22. Give the applications of fin FET.

 Low power design in digital circuits.
 Power amplifier

23. What are disadvantages of JFET?

i. Voltage gain is low.
ii. Gain – bandwidth product is low.
iii. Over load voltages are induced.
iv. Careful usages.

PART-B

1. How does the FET differ from the junction type version?
2. Write the construction, operation and characteristics behavior of JFET under various
biasing conditions. Give necessary figures.
3. Explain with the help of neat diagrams, the structure of an N-channel FET and its Volt-
ampere characteristics. In what ways it is different from a bipolar transistor.
4. Explain why the input resistance of the field –effect transistor is so very high
5. Explain the construction, working and operating characteristics of N-Channel JFET’s
with relevant diagrams. Give the application of JFET’s.
6. Explain the construction and working of enhancement MOSFET and compare it with
JFET.
7. Explain the working of depletion MOSFET and draw its characteristics
8. Compare JFET and MOSFET.
9. Write Short notes on dual gate MOSFET and finFET.
10. Explain the drain and transfer characteristics of FET.
 UNIT – IV
SPECIAL SEMICONDUCTOR DEVICES

1. Define Zener break down.

The break down occurs in junctions, which are heavily doped. The heavily
doped junctions have a narrow depletion layer. When the reverse voltage is increased,
the electric field at the junction also increases. A strong electric field causes a covalent
bond to break from the crystal structure. As a result of this, a large number of minority
carries are generated and a large current flows through the junction

2. What is a tunnel diode?

The tunnel diode is a pn junction diode in which the impurity concentration is
greatly increased about 1000 times higher than a conventional PN junction diode thus
yielding a very thin depletion layer. This diode utilizes a phenomenon called tunneling
and hence the diode is referred as tunnel diode.

3. What is tunneling phenomenon?

The phenomenon of penetration of the charge carriers directly though the
potential barrier instead of climbing over it is called as tunneling

4. Write the application of zener diode.

1. As a voltage regulator.
2. As a fixed reference voltage in transistor biasing circuits.
3. As peak clippers or limited in wave shaping circuits.
4.
5. Draw the VI Characteristics of Zener diode.
IF

VR vF

IR

6. What is photo conductive effect?

It means that the conductivity of a semiconductor depends on light intensity
falling on it

7. What is photo voltaic effect?

It means that a voltage will appear across an open circuited PN junction when it
is Strike by radiation of photo diode.
 8. What is dark current?
When no light is applied in a photodiode there is a minimum reverses leakage
current called dark current.

9. Give the Application of photodiode.

They are used in optical communication system demodulators, encoders, light
operated switches, high speed counting.
10. Distinguish between zener breakdown and Avalanche breakdown.

Zener Breakdown Avalanche Breakdown

It occurs in heavily doped It occurs in lightly doped diodes

bodies
Breaking of covalent Breaking of covalent bonds is due to
bonds is due to intense collision of thermally generated charge
electric field across the carriers having high velocity and kinetic
narrow energy with adjacent atom, this process is
depletion region it a
generates large number cumulative process hence the charge
of free electrons to cause carriers are multiplied hence it is known
breakdown as carrier multiplication or avalanche
multiplication.
The temperature The temperature Coefficients is positive.
coefficient is negative.
This occurs with This occurs with breakdown voltage
breakdown voltage 6Vor above 6V.
less than it.
The reverse characteristics The reverse characteristics are not sharp
is very sharp in breakdown in breakdown region.
region.

11. Define Negative resistance of tunnel diode.

It is defined as the property of a tunnel diode, during its forward biased voltage
increases current decreasing as a result of its dynamic resistance is negative; hence it is called
as negative resistance of the device.

12. State the advantages of tunnel diode.

a. environmental immunity.
b. Low cost
c. Simplicity
d. Low noise
e. High speed
f. Low power consumption

13. Give the disadvantages of tunnel diode.

Only disadvantage of tunnel diode are its low output voltage swing and it is a two
terminal device. Hence there is no isolation between input and output .hence transistor is used
along with a tunnel diode for frequencies below 1 GHz

14 .Give the Applications of tunnel diode.

(i) . As a high speed switch.
 (ii) In pulse and digital circuits.
(iii) In negative resistance and high frequency (micro wave ) oscillator .
(iv) In switch networks
v) In timing and computer logic circuitry.
(vi) Design of pulse generators and amplifiers

15. What is a varactor diode?

The varactor diode is a semiconductor, voltage dependent variable capacitor diode. This
special diode which is made for the application utilization of voltage variable properly hence it
is called varactor diode or Varicaps (or) voltage cap. It is operated under reverse biased
conditions so as to yield a variable junction capacitance.

16. What is LDR?

It is light dependent resistor whose resistance decreases with increasing incident light
intensity.
17. Draw the structures of MESFET.

18. Give the Features of GaAs MESFET.

 Electronmobilty very high
 Reduced parasitic capacitance.
 Fabrication process simple
19. Write the Application of metal semiconductor junction.
 As ohmic contacts in many electronics devices
 Microwave diode
 Ultraviolet detectors
20. Give the Application of LDR.
 Camera Light Meter,
 Clocks,
 Security Alarms

PART-B
1. Explain the operations of tunnel diode
2. Write the short notes on varactor diode.
3. Explain the operation of a zener diode and discuss its V-I characteristics. Also discuss
zener diode as a voltage regulator.
4. Give Comparison between avalanche and zener breakdown.
5. Write Short notes on
o MESFET.
o Schottky Barrier Diode
6. Explain the operation of LASER diode.
7. Explain the operation of LDR.
8. Explain the tunnelling process with neat diagrams.
9. Brief about the operation of photodiode.
10. Discuss the construction of LASER and LDR.
 UNIT – V
POWER DEVICES AND DISPLAY DEVICES

1. What is a LED?
A PN junction diode which emits light when forward biased is known as Light emitting
diode (LED).
2. What is photo electric emission?
When a photon of light strike on the metal surface it may transfer enough energy to the
electrons at the surface of the metal to escape from the surface this called as photo electric
emission.

3. What are the Materials are used for manufacturing LED?

The semi conducting materials used for manufacturing light emitting diodes are
Gallium phosphide and gallium arsenide phosphide.

4. What is a TRIAC?
TRIAC is a three terminal bidirectional semiconductor switching device. It can conduct
in both the directions for any desired period. In operation it is equivalent to two SCR’s
connected in antiparallel.

5. Give the application of TRIAC.

1. Heater control
2. Motor speed control
3. Phase control
4. Static switches

6. What are the different operating modes of TRIAC?

1. Keeping MT2 and G positive
2. Keeping MT2 and G negative.
3. Keeping MT2 positive and G negative.
4. Keeping MT2 negative and G positive.

7. What are the regions in the VI characteristics of UJT?

1. Cut-off region
2. Negative resistance region.
3. Saturation region

8. What is meant by negative resistance region of UJT?

In a UJT when the emitter voltage reaches the peak point voltage, emitter current starts
flowing. After the peak point any effort to increase in emitter voltage further leads to sudden
increase in the emitter current with corresponding decrease in emitter voltage, exhibiting
negative resistance. This takes place until the valley point is reached. This region between the
peak point and valley point is called negative resistance region.

9. Mention the applications of UJT.

1. It is used in timing circuits
 2. It is used in switching circuits
3. It is used in phase control circuits
4. It can be used as trigger device for SCR and triac.
5. It is used in saw tooth generator.
6. It is used for pulse generation.
10. What is a DIAC?
DIAC is a two terminal bidirectional semiconductor switching device. . It can conduct in
either direction depending upon the polarity of the voltage applied across its main terminals. In
operation DIAC is equivalent to two 4 layer diodes connected in antiparallel.

11. Give some applications of DIAC.

1. To trigger TRIAC
2. Motor speed control
3. Heat control
4. Light dimmer circuits
12. What is a SCR?
A silicon controller rectifier (SCR) is a three terminal, three junction semiconductor
device that acts as a true electronic switch. It is a unidirectional device. It converts alternating
current into direct current and controls the amount of power fed to the load.

13. Define break over voltage of SCR.

Break over voltage is defined as the minimum forward voltage with gate open at which
the SCR starts conducting heavily.

14. Why SCR cannot be used as a bidirectional switch?

SCR can do conduction only when anode is positive with respect to cathode with proper
gate current. Therefore, SCR operates only in one direction and cannot be used as bidirectional
switch.
15. How turning on of SCR is done?
1. By increasing the voltage across SCR above forward break over voltage.
2. By applying a small positive voltage at gate.
3. By rapidly increasing the anode to cathode voltage.
4. By irradiating SCR with light.

16. How turning off of SCR is done?

1. By reversing the polarity of anode to cathode voltage.
2. By reducing the current through the SCR below holding current.
3. By interrupting anode current by means of momentarily series or parallel switching

17. Define holding current in a SCR.

Holding current is defined as the minimum value of anode current to keep the SCR ON.

18. List the advantages of SCR.

1. SCR can handle and control large currents.
2. Its switching speed is very high
3. It has no moving parts, therefore it gives noiseless operation.
4. Its operating efficiency is high.

19. List the application of SCR.

1. It can be used as a speed controller in DC and AC motors.
2. It can be used as an inverter.
3. It can be used as a converter
4. It is used in battery chargers.
5. It is used for phase control and heater control.
 6. It is used in light dimming control circuits.

20. What is meant by latching?

The ability of SCR to remain conducting even when the gate signal is removed is called as
latching.
21. Define forward current rating of a SCR.
Forward current rating of a SCR is the maximum anode current that it can handle without
destruction.

22. List the important ratings of SCR.

1. Forward break over voltage
2. Holding current
3. Gate trigger current
4. Average forward current
5. Reverse break down voltage.

23. Differentiate BJT and UJT.

BJT
1. It has two PN junctions
2. Three terminals present
are emitter, base, collector
3. Basically a amplifying device
UJT
1. It has only one PN junctions
2. Three terminals present are emitter,
base1,base2
3. Basically a switching device

24. What is meant by solar cell?

A solar cell is basically a PN junction diode which converts solar energy into electric
energy. It is also called a solar energy converter.

25. Compare SCR with TRIAC.

SCR TRIAC

1 It is a unidirectional device. It is a bidirectional device.

2 It is triggered by a narrow It is triggered by a narrow pulse

positive pulse
applied at the gate.
3 SCR are available only with
large current rating.
4 It has fast turn off.
5 UJT is used for triggering.
of the
either polarity to the gate.
Triac are available for both
lower current and large current
rating.
The turn off time is less than
SCR.
Diac is used for triggering

6 Applications: Applications:
Phase control, protection of Phase control, light dimmer.
power suppliers.

26. Write the two types of display of LCD.

i) Filed effect display
ii) Dynamic scattering display
 PART B

1. Explain the construction and working of a LED and LCD

2. Explain the operation and characteristics of TRIAC.
3. Explain the operation and characteristics of DIAC.
4. Write the short note on light activated SCR.
5. Describe the characteristics of laser diode.
6. Draw the equivalent circuit of UJT and explain its operation.
7. Write short notes on
 Power-BJT
 DMOS and VMOS
 Photo transistor,
 optocoupler
 Solar cell
 CCD