THIN FILM CERAMIC METALLISATION THIN FILM CIRCUITS Thin film circuit metallization schemes at HHV are deposited by magnetron sputtering method and the deposited metal layers show excellent adhesion compared to other non vacuum deposition methods. These metallization schemes start with a bonding layer of TIW or Cr and a conductive layer of Au/Cu on the ceramic substrates. For the resistor applications TaN or NiCr layer and for the solderable applications Ni or Cu is added ta ‘the metallization scheme. The sheet resistance of TaN and NiCr layers is available from 10 - 250 Q/sar depending upon the application. All layers can be deposited in one cycle without breaking the vacuurn by sputtering method. 1S0-7 Class clean room is specifically established at HHV for the purpose of depositing defect free metallization coatings. Standard Metallization schemes: Tiw 400 - 500A" SURLY Au 5.0 - 7.0 um TaN 10 - 250 Dsqr If resistor layer is required Tiw 400 - 500A* ; Au 3.03.5 im TOY NIV. o5eaerm Au 2.0 2.54um cr 200 - 800A" cu 4.0 - 5.0 umm Au 1.8-2.0um Nicr 200 Oisar cu 10.0 -15.0m Nicr 200 O/sqr Ni 0.1 - 0.15 um Au 3.0 um Ti 200 - 800A" Au 0.5 to um Standard Metallizatfon thickness: Ti: 200 - 800A" Cr: 200 - 8004" Ni: 0.2 = 1.0m TaN ar NiGr: 20 - 250 Qisar TiW: 200 - 2008 Cu: 0.5 - 124m NiV: 0.5 - 2.0m Au: 0.5 - 8.Qum Al: 150A" 2.0um Applications: * RF /Mlicrowave integrated circuits + Hybrid micro circuits + SAW devices + RADAR + Thin film resistors posLITHOGRAPHY HEV has added a new photolithography facility to develop a thin film circuit fabrication facility Starting from the metallization of coatings, finished products with patterned circuits can be realized at this facility. This facility has been built in an [S0-7 clean room environment and 1SQ-5 class laminar flow stations. Spin coater, Laser writer, mask aligner & UV exposure system, wet chemical benches, ultrasonic cleaning machines, baking ovens, microscopes and profile projectors are available at this facility to make the full circuit, generation over different types of substrates. Applicatio “+ RF/Microwave integrated circuits ‘+ Hybrid microwave integrated circuits + Thin film resistors + SAW devices + Reticles II Space Appcatons Cente ‘Departmen of oct Government of Inn Amedad— 380013, Goji ‘Gamay ka Siyoyc/ 201703 ‘Suey ro sc Site No. 17, Phas 1, Peeys Indust Arey, Bangor 56058, lds been Qualia by Space Applctons Cente fr 3- jer (Ce-Cu-Aw) metalation proces ‘on 25 mul ick lumina subset ia acondane with ISRO PAX SOS, fe Flight Hardware Realzaion. Dts of Quad Process ae a under, SeNa, Process Type Capabities ‘Mealiations Cx Cabo S-layer metlisation proces on 25 mil hick lamina | Sputer Chromium: 200 30 ‘brat uring Magnemon Spring Sytem Sputer Copper 5 Miso Spuiter Gold 8-2 Micons ag were Ural t4, ode a Ht B | This Coriicate valid up w February 15, 2020 Heat EEA /Reteence Documents 2 sabarer Rete. SAC/SRGIGEN/QTR/L, 207 / Qualication Test Report No. SAC/SRGIGEN/QTR/L0, 2017 > fran pera CEA ¥.: HHV/TFD/MSS/SAC/CCA/05/October, 216 Process Mdentfication Document ID: HIV /TFD/MSS/8AC/CCA/05/October, 2016 7 - san Hoke nt we : . Shem ie a = mais getaee pent mee Smee) eatery) tence ca