Conservation of Energy

Chapter One
Section 1.3
Alternative Formulations

CONSERVATION OF ENERGY
(FIRST LAW OF THERMODYNAMICS)
• An important tool in heat transfer analysis, often
providing the basis for determining the temperature
of a system.

• Alternative Formulations
Time Basis:
At an instant
or
Over a time interval

Type of System:
Control volume
Control surface
CV at an Instant and over a Time Interval

APPLICATION TO A CONTROL VOLUME

• At an Instant of Time:
Note representation of system by a
control surface (dashed line) at the boundaries.

Surface Phenomena
E in E out :
, rate of thermal and/or mechanical energy transfer across the control
surface due to heat transfer, fluid flow and/or work interactions.
Volumetric Phenomena
Eg : rate of thermal energy generation due to conversion from another enegy form
(e.g., electrical, nuclear, or chemical); energy conversion process occurs within the system.

E st : rate of change of energy storage in the system.

Conservation of Energy
dEst (1.11c)
E in  E out  E g  dt
 E st

Each term has units of J/s or W.

• Over a Time Interval

Ein  Eout  Eg  Est (1.11b)

Each term has units of J.

Closed System

• Special Cases (Linkages to Thermodynamics)

(i) Transient Process for a Closed System of Mass (M) Assuming Heat Transfer
to the System (Inflow) and Work Done by the System (Outflow).

Over a time interval

Q  W  Esttot
(1.11a)

For negligible changes in potential or kinetic energy

Q  W  U t
Internal thermal energy

At an instant
dU t
q W 
dt
Example 1.3

Example 1.3: Application to thermal response of a conductor with Ohmic

heating (generation):

• Involves change in thermal energy and for an incompressible substance.

dU t dT
 Mc
dt dt

• Heat transfer is from the conductor (negative q )

• Generation may be viewed as electrical work done on the system (negative W )
Example 1.4

Example 1.4: Application to isothermal solid-liquid phase change in a container:

Latent Heat
of Fusion

Ut  U1at  M hsf

Open System
(ii) Steady State for Flow through an Open System without Phase Change or
Generation:

At an Instant of Time:
•  
• 2 •
m  ut  pv  V  gz   q  m  ut  pv  V
2
 gz   W  0 (1.11d)
 2 in 
2
out
•  pv   flow work
•  ut  pv   i  enthalpy
• For an ideal gas with constant specific heat:
iin  iout  c p Tin  Tout 
• For an incompressible liquid:
uin  uout  c Tin  Tout 
 pv in   pv out  0
• For systems with significant heat transfer:

   
V
2
2 in
 V
2
2 out
0

 gz in   gz out  0
Surface Energy Balance

THE SURFACE ENERGY BALANCE

A special case for which no volume or mass is encompassed by the control surface.
Conservation Energy (Instant in Time):
Ein  E out  0 (1.12)

• Applies for steady-state and transient conditions.

• With no mass and volume, energy storage and generation are not pertinent to the energy
balance, even if they occur in the medium bounded by the surface.

Consider surface of wall with heat transfer by conduction, convection and radiation.

  qconv
qcond   qrad
  0

k
T1  T2
L
 
 h T2  T    2 T24  Tsur
4
0
Methodology

METHODOLOGY OF FIRST LAW ANALYSIS

• On a schematic of the system, represent the control surface by
dashed line(s).

• Choose the appropriate time basis.

• Identify relevant energy transport, generation and/or storage terms

by labeled arrows on the schematic.

• Write the governing form of the Conservation of Energy requirement.

• Substitute appropriate expressions for terms of the energy equation.

• Solve for the unknown quantity.

Problem: Silicon Wafer

Problem 1.43: Thermal processing of silicon wafers in a two-zone furnace.

Determine (a) the initial rate of change of the wafer
temperature and (b) the steady-state temperature.

KNOWN: Silicon wafer positioned in furnace with top and bottom surfaces exposed to hot
and cool zones, respectively.
FIND: (a) Initial rate of change of the wafer temperature from a value of Tw,i  300 K, and (b)
steady-state temperature. Is convection significant? Sketch the variation of wafer temperature
with vertical distance.

SCHEMATIC:

•
Problem: Silicon Wafer (cont.)
ASSUMPTIONS: (1) Wafer temperature is uniform, (2) Hot and cool zones have uniform
temperatures, (3) Radiation exchange is between small surface (wafer) and large enclosure
(chamber, hot or cold zone), and (4) Negligible heat losses from wafer to pin holder.

ANALYSIS: The energy balance on the wafer includes convection from the upper (u) and
lower (l) surfaces with the ambient gas, radiation exchange with the hot- and cool-zone and an
energy storage term for the transient condition. Hence, from Eq. (1.11c),

E in  E out  E st
or, per unit surface area
d Tw
 , h  qrad
qrad  , c  qcv
 ,u  qcv
 ,l   cd
dt
4

 Tsur 4
 4
 4

, h  Tw   Tsur , c  Tw  hu Tw  T   hl Tw  T    cd
d Tw
dt
(a) For the initial condition, the time rate of change of the wafer temperature is determined
using the foregoing energy balance with Tw  Tw,i  300 K,

   
0.65  5.67  108 W / m2  K 4 15004  3004 K 4  0.65  5.67  108 W / m2  K 4 3304  3004 K 4

8 W / m2  K  300  700  K  4 W / m2  K 300  700  K 

2700 kg / m3  875J / kg  K 0.00078 m  d Tw / dt i

 d Tw / dt i  104 K / s
Problem: Silicon Wafer (cont.)
(b) For the steady-state condition, the energy storage term is zero, and the energy balance can
be solved for the steady-state wafer temperature, Tw  Tw,ss .


0.65 15004  Tw,ss
4
 
K 4  0.65 3304  Tw,ss
4

K4

   
8 W / m2  K Tw,ss  700 K  4 W / m2  K Tw,ss  700 K  0

Tw,ss  1251 K

To assess the relative importance of convection, solve the energy balances assuming no
convection. With  d Tw / dt i  101 K / s and Tw,ss  1262 K. , we conclude that the radiation
exchange processes control the initial rate of change and the steady-state temperature.

If the wafer were elevated above the present operating position, its temperature would
increase, since the lower surface would begin to experience radiant exchange with
progressively more of the hot zone. Conversely, by lowering the wafer, the upper surface
would experience less radiant exchange with the hot zone, and its temperature would decrease.
The temperature-distance relation might appear as shown in the sketch.
Problem Cooling of Spherical Canister

Problem 1.48: Cooling of spherical canister used to store reacting chemicals.

Determine (a) the initial rate of change of the canister temperature,
(b) the steady-state temperature, and (c) the effect of convection
on the steady-state temperature.

535 J/kg·K

KNOWN: Inner surface heating and new environmental conditions associated with a spherical
shell of prescribed dimensions and material.

FIND: (a) Governing equation for variation of wall temperature with time and the initial rate of
change, (b) Steady-state wall temperature and, (c) Effect of convection coefficient on canister
temperature.
Problem Cooling of Spherical Canister

SCHEMATIC:

ASSUMPTIONS: (1) Negligible temperature gradients in wall, (2) Constant properties, (3) Uniform,
time-independent heat flux at inner surface.

PROPERTIES: Table A.1, Stainless Steel, AISI 302:  = 8055 kg/m3, c p = 535 J/kgK.

ANALYSIS: (a) Performing an energy balance on the shell at an instant of time, Ein  Eout  Est .
Identifying relevant processes and solving for dT/dt,

    4

qi 4 ri2  h 4 ro2  T  T     ro3  ri3 cp
3
 dT
dt
dT

3 q  r 2  hr 2  T  T   .
 
 
dt  c r3  r3  i
i o
p o i
Problem Cooling of Spherical Canister

Substituting numerical values for the initial condition, find

 W W 
3 105  0.5m   500
2
 0.6m   500  300  K 
2
dT   m2 m2  K 
 
J 
dt i 0.6    0.5  m3
kg
8055 535  3 3
m3 kg  K  
dT 
  0.084 K/s
dt i

(b) Under steady-state conditions with Est = 0, it follows that

   
qi 4 ri2  h 4 ro2  T  T 

2 2
qi  ri  105 W/m2  0.5m 
T  T     300K     439K
h  ro  2
500W/m  K  0.6m 

(c) Parametric calculations show a sharp increase in temperature with decreasing values of h < 1000
W/m2K. For T > 380 K, boiling will occur at the canister surface, and for T > 410 K a condition known
as film boiling (Chapter 10) will occur. The condition corresponds to a precipitous reduction in h and
increase in T.
Problem Cooling of Spherical Canister

1000

900

800

Temperature, T(K)
700

600

500

400

300
100 400 800 2000 6000 10000

Convection coefficient, h(W/m^2.K)

Although the canister remains well below the melting point of stainless steel for h = 100 W/m2K, boiling
should be avoided, in which case the convection coefficient should be maintained at h > 1000 W/m2K.

COMMENTS: The governing equation of part (a) is a first order, nonhomogenous differential equation


with constant coefficients. Its solution is    S/R  1  eRt  i eRt , where   T  T ,
   
S  3qi ri2 /  cp ro3  ri3 , R  3hro2 / cp ro3  ri3 . Note results for t   and for S = 0.