DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK2480
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE

DESCRIPTION
The 2SK2480 is N-Channel MOS Field Effect Transistor designed PACKAGE DIMENSIONS
for high voltage switching applications. (in millimeter)

FEATURES 10.0±0.3 4.5±0.2

• Low On-Resistance 3.2±0.2
2.7±0.2
RDS (on) = 4.0 Ω (VGS = 10 V, ID = 2.0 A)
• Low Ciss Ciss = 900 pF TYP.
• High Avalanche Capability Ratings

15.0±0.3

3±0.1
12.0±0.2
• Isolated TO-220 Package

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

4±0.2
Drain to Source Voltage VDSS 900 V

13.5MIN.
Gate to Source Voltage VGSS ±30 V
Drain Current (DC) ID(DC) ±3.0 A
Drain Current (pulse)* ID(pulse) ±12 A
Total Power Dissipation (Tc = 25 ˚C) PT1 35 W 0.7±0.1 1.3±0.2 2.5±0.1
1.5±0.2 0.65±0.1
Total Power Dissipation (TA = 25 ˚C) PT2 2.0 W 2.54
2.54
Channel Temperature Tch 150 ˚C
1. Gate
Storage Temperature Tstg –55 to +150 ˚C 2. Drain
Single Avalanche Current** IAS 3.0 A 3. Source

Single Avalanche Energy** EAS 37.1 mJ 1 2 3

* PW ≤ 10 µs, Duty Cycle ≤ 1 %
MP-45F (ISOLATED TO-220)
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
Drain

Body
Diode
Gate

Source

Document No. D10272EJ1V0DS00 (1st edition)

Date Published August 1995 P
Printed in Japan
© 1995
 2SK2480

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS

Drain to Source On-Resistance RDS (on) 3.2 4.0 Ω VGS = 10 V, ID = 2.0 A

Gate to Source Cutoff Voltage VGS (off) 2.5 3.5 V VDS = 10 V, ID = 1 mA

Forward Transfer Admittance | yfs | 1.0 S VDS = 20 V, ID = 2.0 A
Drain Leakage Current IDSS 100 µA VDS = VDSS, VGS = 0

Gate to Source Leakage Current IGSS ±100 nA VGS = ±30 V, VDS = 0

Input Capacitance Ciss 900 pF VDS = 10 V
Output Capacitance Coss 130 pF VGS = 0

Reverse Transfer Capacitance Crss 25 pF f = 1 MHz

Turn-On Delay Time td (on) 17 ns ID = 2.0 A
Rise Time tr 7 ns VGS = 10 V

Turn-Off Delay Time td (off) 63 ns VDD = 150 V

Fall Time tf 8 ns RG = 75 Ω

Total Gate Charge QG 30 nC ID = 3.0 A

Gate to Source Charge QGS 5 nC VDD = 450 V

Gate to Drain Charge QGD 16 nC VGS = 10 V
Body Diode Forward Voltage VF (S-D) 1.0 V IF = 3.0 A, VGS = 0

Reverse Recovery Time trr 650 ns IF = 3.0 A, VGS = 0

Reverse Recovery Charge Qrr 2.8 µC di/dt = 50 A/µs

Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time

D.U.T. D.U.T.
RG = 25 Ω L RL VGS
VGS 90 %
VGS (on)
RG Wave Form 10 %
0
PG 50 Ω VDD PG. RG = 10 Ω VDD
VGS = 20 - 0 V ID 90 %
90 %
VGS ID
BVDSS I 10 % 10 %
0 D 0
Wave Form
IAS
ID VDS t td (on) tr td (off) tf
VDD
ton toff
t = 1us
Duty Cycle ≤ 1 %
Starting Tch

Test Circuit 3 Gate Charge

D.U.T.
IG = 2 mA RL

PG. 50 Ω VDD

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

2
 2SK2480

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

DERATING FACTOR OF FORWARD BIAS TOTAL POWER DISSIPATION vs.

SAFE OPERATING AREA CASE TEMPERATURE
35
dT - Percentage of Rated Power - %

PT - Total Power Dissipation - W

100 30

25
80
20
60
15
40
10

20 5

0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

TC - Case Temperature - ˚C TC - Case Temperature - ˚C

DRAIN CURRENT vs.

FORWARD BIAS SAFE OPERATING AREA DRAIN TO SOURCE VOLTAGE
100
Pulsed
10
P
ID(pulse) W =
ID - Drain Current - A

ID - Drain Current - A
10 ) 10
0V 0 VGS = 20 V
=
1 µs
GS 10 V
atV ID(DC)
1
m
d( s 8V
ite 10 5 6V
Lim Po
n) w m
DS
(o er 10 s
1 R Di 0
ss m
ip s
at
io
n
Li
TC = 25 ˚C m
ite
Single Pulse d
0.1
1 10 100 1000 0 10 20 30 40
VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V

FORWARD TRANSFER CHARACTERISTICS

100
Pulsed
VDS = 10 V
TA = –25 ˚C
25 ˚C
75 ˚C
ID - Drain Current - A

10
125 ˚C

1.0

0.1

0 5 10 15
VGS - Gate to Source Voltage - V

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 2SK2480

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1 000

rth(t) - Transient Thermal Resistance - ˚C/W

100 Rth(ch-a) = 62.5(˚C/W)

10
Rth(ch-c) = 3.57(˚C/W)

0.1

0.01
Single Pulse
Tc = 25 ˚C
0.001
10 µ 100 µ 1m 10 m 100 m 1 10 100 1 000

PW - Pulse Width - s

FORWARD TRANSFER ADMITTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN CURRENT RDS(on) - Drain to Source On-State Resistance - Ω GATE TO SOURCE VOLTAGE
100
| yfs | - Forward Transfer Admittance - S

VDS = 20 V Pulsed
Pulsed

10 10
TA = –25 ˚C
25 ˚C
75 ˚C
125 ˚C
ID = 3A
1.0 5 1.5 A
0.6 A

0.1
0.01 0.1 1.0 10 0 10 20 30
ID - Drain Current - A VGS - Gate to Source Voltage - V

DRAIN TO SOURCE ON-STATE GATE TO SOURCE CUTOFF VOLTAGE vs.

RDS(on) - Drain to Source On-State Resistance - Ω

RESISTANCE vs. DRAIN CURRENT CHANNEL TEMPERATURE

8
VGS(off) - Gate to Source Cutoff Voltage - V

Pulsed VDS = 10 V
VGS = 10 V ID = 1 mA
7

5
5
4

0 0
1.0 10 100 –50 0 50 100 150
ID - Drain Current - A Tch - Channel Temperature - ˚C

4
 2SK2480

SOURCE TO DRAIN DIODE

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

RDS(on) - Drain to Source On-State Resistance - Ω

FORWARD VOLTAGE
CHANNEL TEMPERATURE
Pulsed
100

ISD - Diode Forward Current - A

10
5

1
VGS = 10 V
VGS = 0 V
0.1
VGS = 10 V
0 ID = 2 A
–50 0 50 100 150 0 0.5 1.0 1.5
Tch - Channel Temperature - ˚C VSD - Source to Drain Voltage - V

CAPACITANCE vs. DRAIN TO

SOURCE VOLTAGE SWITCHING CHARACTERISTICS
10 000 VGS = 0 1 000
f = 1 MHz

td(on), tr, td(off), tf - Switching Time - ns

Ciss, Coss, Crss - Capacitance - pF

1 000 Ciss 100

td(off)
tr
td(on)
tf
100 10

Coss VDD = 150 V

VGS = 10 V
10 Crss 1.0 RG = 10 Ω
1.0 10 100 1000 0.1 1.0 10 100
VDS - Drain to Source Voltage - V ID - Drain Current - A

REVERSE RECOVERY TIME vs.

DRAIN CURRENT DYNAMIC INPUT/OUTPUT CHARACTERISTICS
10 000 di/dt = 50 A/µs 16
VGS = 0 ID = 3.0 A
trr - Reverse Recovery time - ns

VGS - Gate to Source Voltage - V

14

12
1 000
10 VDD = 450 V
300 V
8 150 V

100 6

2
10
0.1 1.0 10 100 0
4 8 12 16 20 24 28
ID - Drain Current - A Qg - Gate Charge - nC

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 2SK2480

SINGLE AVALANCHE CURRENT vs. SINGLE AVALANCHE ENERGY

INDUCTIVE LOAD DERATING FACTOR
100 160
VDD = 150 V
RG = 25 Ω
IAS - Single Avalanche Current - A

140
VGS = 20 V → 0

Energy Derating Factor - %

IAS ≤ 3.0 A
120
10
100
IAS = 3 A
EAS 80
=3
7.1
mJ 60
1.0
40
VDD = 150 V 20
VGS = 20 V → 0
RG = 25 Ω 0
100 µ 1m 10 m 100 m 25 50 75 100 125 150
L - Inductive Load - H Starting Tch - Starting Channel Temperature - ˚C

6
 2SK2480

REFERENCE

Document Name Document No.

NEC semiconductor device reliability/quality control system. TEI-1202

Quality grade on NEC semiconductor devices. IEI-1209

Semiconductor device mounting technology manual. IEI-1207
Semiconductor device package manual. IEI-1213

Guide to quality assurance for semiconductor devices. MEI-1202

Semiconductor selection guide. MF-1134
Power MOS FET features and application switching power supply. TEA-1034

Application circuits using Power MOS FET. TEA-1035

Safe operating area of Power MOS FET. TEA-1037

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 2SK2480

[MEMO]

No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.

M4 94.11

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