CHAPTER 4 POWER TRANSISTORS

Problem 4-1

Vcc = 100 V, 6min = 10, 6max = 60, Rc = 5 Q, ODF = 20, VB = 8 V,

VcE(sat) = 2.5 V and VBE(sat) = 1-75 V. From Eq. (4-14), Ics = (100 - 2.5)/5 = 19.5 A

From Eq. (4-15), IBS = 19.5/6min = 19.5/10 = 1.95 A Eq. (4-16) gives the base current for a overdrive
factor of 20,

IB = 20 x 1.95 = 3 A (a) Eq. (4-9) gives the required value of RB,

RB = (VB - VBE(sat))/lB = (8 - 1.75)/3 = 0.1894 Q (b) From Eq. (4-17), Bf = 19.5/3 = 0.59 (c) Eq. (4-18)
yields the total power loss as PT = 1.75 x 3 + 2.5 x 19.5 = 106.5 W

Problem 4-2

Vcc = 40 V, 6min = 12, Bmax = 75, Rc = 1.5 Q, VB = 6 V,

VcE(sat) = 1-2 V and VBE(sat) = 1-6 V. From Eq. (4-14), Ics = (40 - 1.2)/1.5 = 25.87 A

From Eq. (4-15), IBS = 25.87/6min = 25.87/12 = 2.156 A IB = (6 -1.6)/0.7 = 4.4/0.7 = 6.286 A

(a) ODF = IB/IBS = 6.286/2.156 = 2.916 (b) From Eq. (4-17), Bf = 25.8/6.286 = 4.104

(c) Eq. (4-18) yields the total power loss as PT = 1.2 x 25.87 + 1.6 x 6.286 = 41.104 W

Problem 4-3

Vcc = 200 V, BBE(sat) = 3 V, IB = 8 A, VCE(sat) = 2 V, Ics = 100 A, td = 0.5 us, tr = lis, ts = 5 us, tf = 3
us, fs = 10 kHz, k = 0.5, T = l/fs = 100 s. kT = td + tr + tn = 50 \is and tn = 50 - 0.5 - 1 = 48.5 s, (l-k)T = ts
+ tf + t0 = 50 us and t0 = 50 - 5 - 3 = 42 jas.

(a) From Eq. (4-21), Pc(t) = 3 x 10'3 x 200 = 0.6 W Pd = 3 x 10"3 x 200 x 0.5 x 10-6 x 10 x 103 = 3 mW
During rise time, 0< t < tr: From Eq. (4-23), tm = 1 x 200/[2(200 - 2)] = 0.505 us From Eq. (4-24), Pp =
2002 x 100/[4(200 - 2)] = 5050.5 W From Eq. (4-25),

Pr = 10 x 103 x 100 x 1 x 10"6 [220/2 + (2 - 200)/3] = 34 W

Pon = Pd + Pr = 0.003 + 34 = 34.003 W (b) Conduction Period, 0 < t < tn: Pc(t) = 2 x 100 = 200 W From
Eq. (4-27), Pn = 2 x 100 x 48.5 x 10-6 x 10 x 103 = 97 W (c) Storage Period, 0 < t < ts: Pc(t) = 2 x 100 =
200 W

From Eq. (4-28), Ps = 2 x 100 x 5 x 10-6 x 10 x 103 = 10 W Fall time, 0 < t < tf:

From Eq. (4-30), Pp = 200 x 100/4 = 5000 W

From Eq. (4-31), Pf = 200 x 100 x 3 x 10-6 x 10 x 103/6 = 100 W Poff = ps + pf = 10 + 100 = 110 W

(d) Off-period, 0 < t < t0: Pc(t) = 3 x 10"3 x 200 = 0.6 W

From Eq. (4-3), Po = 3 x 10-3 x 200 x 42 x 10'6 x 10 x 103 = 0.252 W

(e) The total power loss in the transistor due to collector current is

PT = pon + Pn + poff + P0 = 34.003 + 97 + 110 + 241.255 W

Problem 4-4

Tj = 150 °C, TA = 25 °C, RJC = 0.04 °C/W, Rcs = 0.05 °C/W

From Problem 4-3, PT = 241.25 W

PT(RjC + Res + RSA) = Tj - TA = 150 - 25 = 125 RSA = 125/241.25 - 0.04 - 0.05 = 0.0681 °C/W

Problem 4-5

BBE(sat) = 3 V, IB = 8 A, T = l/fs = 100 u = 1 us, tn = 50 - 1.5 = 48.5 |as, ts = 5 ^

= ts + tf = 5 + 3 = 8 is (a) During the period, 0 <t< (ton + tn):

k = 0.5, kT = 50 us, td = 0.5 us, tr tf = 3 5, ton = td + tr = 1.5 jS, toff

VBE(t) = VBE(sat) The instantaneous power due to the base current is

Pb(t) = ib VBE = IBS VBE(sat) = 8 x 3 = 24 W During the period, 0 < t < t0 = (T - ton - tn): Pb(t) = 0 From
Eq. (4-35), the average power loss is

PB = IBS VBE(sat) (ton + tn + ts)fs = 8 x 3 x (1.5 + 48.5 + 5) x 10'6 x 10 x 103 = 13.2 W

Problem 4-6
Vcc = 200 V, BBE(sat) = 2.3 V, IB = 8 A, VCE(sat) = 1.4 V, Ics = 100 A, td = 0.1 (as, tr = 0.45 us, ts = 3.2
s, tf = 1.1 s, fs = 10 kHz, k = 0.5, T = l/fs = 100

US. kT = td + tr + tn = 50 us and tn = 50 - 0.45 - 0.1 = 49.45 us, (l-k)T = ts + tf + t0 = 50 us and to = 50 -

3.2 - 1.1 = 45.7 jas.
(a) From Eq. (4-21), Pc(t) = 3 x 10'3 x 200 = 0.6 W Pd = 3 x 10'3 x 200 x 0.1 x 10"6 x 10 x 103 = 0.6 mW
During rise time, 0 < t < tr:

From Eq. (4-23), tm = 0.45 x 200/[2(200 - 1.4)] = 0.26 Ds

From Eq. (4-24), Pp = 2002 x 100/[4(200 - 1.4)] = 5035.25 W From Eq. (4-25),

Pr = 10 x 103 x 100 x 0.45 x 10"6 [220/2 + (1.4 - 200)/3] = 15.21 W

Pon = Pd + Pr = 0.0006 + 15.21 W = 15.21 W (b) Conduction Period, 0 < t < tn:

Pc(t) = 1.4 x 100 = 280 W From Eq. (4-27), Pn = 1.4 x 100 x 49.45 x 10"5 x 10 x 103 = 69.23 W (c)
Storage Period, 0 < t < ts: Pc(t) = 1.4 x 100 = 140 W

From Eq. (4-28), Ps =1.4 x 100 x 3.2 x 10"6 x 10 x 103 = 4.48 W

Fall time, 0 < t < tf: From Eq. (4-30), Pp = 200 x 100/4 = 5000 W From Eq. (4-31), Pf = 200 x 100 x 1.1 x
10'6 x 10 x 103/6 = 36.67 W p = Ps + Pf = 4.48 + 36.67 = 41.15 W

(d) Off-period, 0 < t < t0: Pc(t) = 3 x 10"3 x 200 = 0.6 W

From Eq. (4-3), P0 = 3 x 10"3 x 200 x 45.7 x 10"6 x 10 x 103 = 0.274 W

(e) The total power loss in the transistor due to collector current is PT = pon + Pn + p + P0 = 15.21 +
69.23 + 41.15 + 0.274 = 125.87 W

Problem 4-7

VDD = 40 V, ID = 35 A, IDSS = 250 nA, RDS = 28 mQ, VGS = 10 V, td(0n) = 25 ns, tr = 60 ns, td(0ff) =
70 ns, tf = 25 ns, fs = 20 kHz, k = 0.6, T = l/fs = 50 us. kT = td(on) + tr + tn = 50000 ns and tn = 50000 -
25 - 60 = 29915 ns, (1- k)T = tf + td(off) + t0 = 20000 ns and t0 = 20000 - 70 - 25 = 19905 ns.

(a) During delay time, 0 < t < td(0n): 37 io(t) = loss vDs(t) = VDD The instantaneous power due to the
collector current is

Po(t) = ID VDS = loss VDD = 250 x 1CT3 x 40 = 0.01 W The average power loss during the delay time is

From Eq. (4-21), Pd = IDSs VDD td(on) fs = 250 x 10'3 x 40 x 25 x 10'9 x 20 x 103 = 5 mW

During rise time, 0 < t < tr:

From Eq. (4-2)

PS t

~ VDD ~ r
VDD+(<RDSIDS VDD) t r

From Eq. (4-23) the power Po(t) will be maximum when t = tm/ where f.Fnn 60xl(T9x40 on c-7 «= 30.67
ns"2x(40-25xl(T3x35) and Eq. (4-24) yields the peak power
From Eq. (4-25).

P = f J tIr JS*DSlr VDD RDS JDS VCC

= 20 x 103 x 35 x 60 x 10"9 [40/2 + (25 x 10~3 x 35 - 40)/3] = 1.3877 W The total power loss during the
turn-on is

Ron = Pd + Pr = 0.005 + 1.3877 = 1.39275 W

(b) Conduction Period, 0 < t < tn:

io(t) = IDS

Vos(t) = RDS IDS Po(t) = ID VDS = RDS IDS IDS = 25 x 10"3 x 352 = 30.625 W

From Eq. (4-27), Pn = RDS IDS IDS tn fs = 25 x 10'3 x352 x 29915 x 10'9 x 20 x 103 = 18.32 W

(c) Storage Period, 0 < t < td(0ff):

io(t) = IDS Vos(t) = RDS IDS Pc(t) = ID VDS = RDS IDS IDS = 25 x 10"3 x 352 = 30.625 W

Po(off) = RDS IDS IDS td(off) fs = 25 x 10"3 x352 x 70 x 10'9 x 20 x 103 = 42.87 mW

Fall time, 0 < t < tf:

tV

This power loss during fall time will be maximum when t = tf/2 = 12.5 ns. From Eq. (4-30), the peak
power,

PD = VDD IDS /4 = 40 x 35/4 = 350 W From Eq. (4-31), Pf = VDD IDS tf fs/6 = 40 x 35 x 25 x 10"9 x 20 x
103/6 = 0.117 W The power loss during turn-off is

Poff = Po(off) + Pf = 0.04287 + 0.117 = 0.15987 W (d) Off-period, 0<t<t0: 39

«o(t) = loss vDs(t) = VDD

PD(t) = ID vDS = IDSS VDD = 250 x ID'6 x 40 = 10 mW

PO = IDSS VDD t0 fs = 250 x 10"6 x 40 x 19905 x 10"9 x 20 x 103 = 3.981 mW

(e) The total power loss in the transistor due to collector current is
PT = Pon + Pn + Poff + PO = 1.3927 + 18.32 + 0.04287 + 0.01 = 20.466 W

Problem 4-8

From Problem 4-7, PT = 20.466 W

RJC = 1 °K/W, Rcs = 1 °K/W, Tj = 150 °C, TA = 30 °C Tj = 150 °C + 273 = 423 °K

TA = 30 °C + 273 = 303 °K
PT(Rjc + Res + RSA) = Tj - TA = 423 - 303 = 120 RSA = 120/20.466 - 1 -1 = 3.863 °K/W

Problem 4-9
IT = 200 A, VCEI = 1.5 V, VCE2 = 1.1 V (a) Rei = 10 mQ, R62 = 20 mQ

IEI +IE2 = IT VcEl + IEI Rei = VCE2 + IE2 Re2 or IEI = (VCE2 - VCEI + IT Re2)/(Rei + Re2) = (1.1 - 1.5 +
200 x 20 x 10-3)/(0.01 + 0.02) = 120 A or 60 %

IE2 = 200 - 120 = 80 A or 40 %. Al = 60 - 40 = 20 %

(b) Rei = R62 = 20 mQ

IEI = (1.1 - 1.5 + 200 x 20 x 10"3)/(0.01 + 0.02) = 90 A or 45 % IE2 = 200 - 90v= 110 A or 5 %. AI = 5 - 45
= 10 %

Problem 4-10

IL = 100 A, \/5 = 400 V, fs = 20 kHz, tr = 1 is, and tf = 3 s. (a) From Eq. (4-4), Ls = 40 x 1/100 = 4 H

(b) From Eq. (4-46), Cs = 100 x 3/400 = 0.75 F (c) From Eq. (4-47), Rs = 2 V(4/0.75) = 4.62 Q (d) From
Eq. (4-48), Rs = 103/(3 x 20 x 0.75) = 2.2 2 Q (e) Vs/Rs = 0.05 x IL or 400/RS = 0.05 x 100 or Rs = 80 Q
(f) From Eq. (4-49), the snubber loss is

Ps =0.5 Cs Vs2 fs = 0.5 x 0.75 x 10'6x4002 x 20 x 103 = 1200 W

Problem 4-11

IL = 40jVVs = 30 V, fs = 50 kHz, tr = 60 ns, and tf = 25 ns (a) From Eq. (4-4), Ls = 30 x 60 x 10"9/40 =

0.045

(b) From Eq. (4-46), Cs = 40 x 25 x 10'9/30 = 0.0333 (c) From Eq. (4-47), Rs = 2 V(45/3.3) = 2.324 Q

(d) From Eq. (4-48), Rs = 106/(3 x 50 x 3.3 = 200 Q

(e) Vs/Rs = 0.05 x IL or 30/RS = 0.05 x 40 or Rs = 15 Q (f) From Eq. (4-49), the snubber loss is Ps =
0.5CsVs2fs = 0.5 x 3.3 x 10"9x 302x 50 x 103= 0.75 W