PD -91595A

IRG4BC30KD
INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated
ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT
C
Features
• High short circuit rating optimized for motor control, VCES = 600V
tsc =10µs, @360V VCE (start), TJ = 125°C,
VGE = 15V
• Combines low conduction losses with high
VCE(on) typ. = 2.21V
G
switching speed
• tighter parameter distribution and higher efficiency than @VGE = 15V, IC = 16A
E
previous generations
• IGBT co-packaged with HEXFREDTM ultrafast, n-ch an nel
ultrasoft recovery antiparallel diodes
Benefits
• Latest generation 4 IGBTs offer highest power density
motor controls possible
• HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
• This part replaces the IRGBC30KD2 and IRGBC30MD2
products
• For hints see design tip 97003 TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 28
IC @ TC = 100°C Continuous Collector Current 16
ICM Pulsed Collector Current Q 58 A
ILM Clamped Inductive Load Current R 58
IF @ TC = 100°C Diode Continuous Forward Current 12
IFM Diode Maximum Forward Current 58
tsc Short Circuit Withstand Time 10 µs
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 100
W
PD @ TC = 100°C Maximum Power Dissipation 42
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT ––– ––– 1.2
RθJC Junction-to-Case - Diode ––– ––– 2.5 °C/W
RθCS Case-to-Sink, flat, greased surface ––– 0.50 –––
RθJA Junction-to-Ambient, typical socket mount ––– ––– 80
Wt Weight ––– 2 (0.07) ––– g (oz)

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IRG4BC30KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown VoltageS 600 — — V VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.54 — V/°C VGE = 0V, IC = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage — 2.21 2.7 IC = 16A VGE = 15V
— 2.88 — V IC = 28A See Fig. 2, 5
— 2.36 — IC = 16A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -12 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance T 5.4 8.1 — S VCE = 100V, IC = 16A
ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V
— — 2500 VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop — 1.4 1.7 V IC = 12A See Fig. 13
— 1.3 1.6 IC = 12A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 67 100 IC = 16A
Qge Gate - Emitter Charge (turn-on) — 11 16 nC VCC = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) — 25 37 VGE = 15V
td(on) Turn-On Delay Time — 60 —
tr Rise Time — 42 — TJ = 25°C
ns
td(off) Turn-Off Delay Time — 160 250 IC = 16A, VCC = 480V
tf Fall Time — 80 120 VGE = 15V, RG = 23Ω
Eon Turn-On Switching Loss — 0.60 — Energy losses include "tail"
Eoff Turn-Off Switching Loss — 0.58 — mJ and diode reverse recovery
Ets Total Switching Loss — 1.18 1.6 See Fig. 9,10,14
tsc Short Circuit Withstand Time 10 — — µs VCC = 360V, TJ = 125°C
VGE = 15V, RG = 10Ω , VCPK < 500V
td(on) Turn-On Delay Time — 58 — TJ = 150°C, See Fig. 11,14
tr Rise Time — 42 — IC = 16A, VCC = 480V
ns
td(off) Turn-Off Delay Time — 210 — VGE = 15V, RG = 23Ω
tf Fall Time — 160 — Energy losses include "tail"
Ets Total Switching Loss — 1.69 — mJ and diode reverse recovery
LE Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Cies Input Capacitance — 920 — VGE = 0V
Coes Output Capacitance — 110 — pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance — 27 — ƒ = 1.0MHz
trr Diode Reverse Recovery Time — 42 60 ns TJ = 25°C See Fig.
— 80 120 TJ = 125°C 14 IF = 12A
Irr Diode Peak Reverse Recovery Current — 3.5 6.0 A TJ = 25°C See Fig.
— 5.6 10 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge — 80 180 nC TJ = 25°C See Fig.
— 220 600 TJ = 125°C 16 di/dt = 200Aµs
di(rec)M/dt Diode Peak Rate of Fall of Recovery — 180 — A/µs TJ = 25°C See Fig.
During tb — 160 — TJ = 125°C 17

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 IRG4BC30KD
16

For both:
14
D uty cy cle: 50%
TJ = 125°C
12 T s ink = 90°C
LOAD CURRENT (A)

G ate drive as specified

P ow e r Dis sip ation = 21 W
10
S q u a re w a v e :

8 6 0% of rate d
volta ge

6
I

4
Id e a l d io d e s
2

0
0.1 1 10 100
f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

100 100


TJ = 25 o C
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)


TJ = 150 o C

TJ = 150 o C
10 10


TJ = 25 oC
1 1

0.1

V GE = 15V
20µs PULSE WIDTH
0.1

V CC= 50V
5µs PULSE WIDTH
1 10 5 10 15
VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

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IRG4BC30KD

30 4.0
V GE = 15V
80 us PULSE WIDTH 
I C = 32 A

VCE , Collector-to-Emitter Voltage(V)

25
Maximum DC Collector Current(A)

20 3.0

15 
I C = 16 A

10 2.0 
I C = 8.0A
8A

0 1.0
25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160
TC , Case Temperature ( ° C) TT , Junction Temperature ( °C)
J J, Junction Temperature ( °C )

Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature vs. Junction Temperature

10
Thermal Response (Z thJC )

1
D = 0.50


0.20

0.10 P DM
0.1 0.05 t1
0.02 t2


0.01 SINGLE PULSE
(THERMAL RESPONSE) Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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 IRG4BC30KD


1500


20
VGE = 0V, f = 1MHz VCC = 400V
Cies = Cge + Cgc , Cce SHORTED I C = 16A
Cres = Cgc

VGE , Gate-to-Emitter Voltage (V)

1200 Coes = Cce + Cgc 16
C, Capacitance (pF)

900

Cies
12

600 8

300 C
oes 4

C
res
0 0
1 10 100 0 20 40 60 80
VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC)

Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.

Collector-to-Emitter Voltage Gate-to-Emitter Voltage


10


23Ω
1.50
V CC = 480V RG = Ohm
V GE = 15V VGE = 15V
TJ = 25 ° C VCC = 480V 
IC = 32 A
1.40 I C = 16A
Total Switching Losses (mJ)
Total Switching Losses (mJ)


IC = 16 A
1.30

1

IC = 8.0A
8A
1.20

1.10

1.00 0.1
0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160
RG, ,Gate
RG Gate Resistance Ω)
Resistance ((Ohm) TJ , Junction Temperature ( °C )

Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs.
Resistance Junction Temperature

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IRG4BC30KD


5.0
Ω

100
RG = 23
Ohm VGE = 20V
TJ = 150 ° C T J = 125 oC
125°C
VCC = 480V

I C , Collector-to-Emitter Current (A)

4.0 VGE = 15V
Total Switching Losses (mJ)

3.0

10

2.0

1.0

SAFE OPERATING AREA

0.0 1
0 8 16 24 32 40 1 10 100 1000
I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V)

Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA

Collector-to-Emitter Current
100
Insta ntane ous Forward C urrent - I F (A )

TJ = 15 0°C

10 TJ = 12 5°C

TJ = 2 5°C

1
0.4 0.8 1.2 1.6 2.0 2.4
Fo rwa rd V oltage D rop - V F M (V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

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 IRG4BC30KD
160 100

VR = 2 0 0 V VR = 2 0 0 V
T J = 1 2 5 °C T J = 1 2 5 °C
T J = 2 5 °C T J = 2 5 °C

120

I F = 24 A
I F = 2 4A

I IR R M - (A )
t rr - (ns)

I F = 1 2A
I F = 1 2A
80 10
I F = 6 .0 A
I F = 6 .0A

40

0 1
100 1000 100 1000
d i f /d t - (A /µ s) di f /dt - (A /µs)
Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt

600 10000

VR = 2 0 0 V VR = 2 0 0 V
T J = 1 2 5 °C T J = 1 2 5 °C
T J = 2 5 °C T J = 2 5 °C
d i(re c )M /d t - (A /µ s)

400 1000
IF = 6.0 A
Q R R - (n C )

I F = 24 A
I F = 12 A
I F = 12 A
200 100

I F = 2 4A
I F = 6.0 A

0 10
100 1000 100 1000
d i f /dt - (A /µs) d i f /d t - (A /µ s)

Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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IRG4BC30KD

90% Vge
Same ty pe
device as +Vge
D .U.T.

V ce

430µF
80%
of Vce D .U .T. 9 0 % Ic
10% Vce
Ic Ic
5 % Ic

td (o ff) tf

∫
t1 + 5 µ S

Fig. 18a - Test Circuit for Measurement of E o ff = Vce

V c e icIcd tdt
t1
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf

t1 t2

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

Eoff, td(off), tf

∫
trr
G A T E V O L T A G E D .U .T . trr
Ic
Q rr = Ic ddt
id t
tx
1 0 % +V g
+Vg
tx
1 0 % Irr
10% Vcc
V cc
D UT VO LTAG E
Vce
AN D CU RRE NT V pk
Irr
1 0 % Ic
Vcc Ip k
9 0 % Ic
Ic
D IO D E R E C O V E R Y
W A V E FO R M S
5% Vce
td (o n ) tr

∫
t2
Vce
ce ieIcd t dt

∫
E on = V t4
t1 E re c = VVd
d idIc
d t dt
t3
t1 t2 D IO D E R E V E R S E
REC OVERY ENER GY

t3 t4

Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr Defining Erec, trr, Qrr, Irr

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 IRG4BC30KD

V g G A T E S IG N A L
D E V IC E U N D E R T E S T

C U R R E N T D .U .T .

V O L T A G E IN D .U .T .

C U R R E N T IN D 1

t0 t1 t2

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

L D.U.T. 480V
RL=
4 X IC @25°C
1000V Vc*
0 - 480V
50V
6000µ F
100 V

Figure 19. Clamped Inductive Load Test Figure 20. Pulsed Collector Current
Circuit Test Circuit

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IRG4BC30KD
Notes:
Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature
(figure 20)
R VCC=80%(VCES), VGE=20V, L=10µH, RG= 23Ω (figure 19)
S Pulse width ≤ 80µs; duty factor ≤ 0.1%.
T Pulse width 5.0µs, single shot.

Case Outline — TO-220AB

1 0 .5 4 (.41 5 ) 3.78 (.149) -B - N O TE S :

2 .8 7 (.1 1 3 ) 1 0 .2 9 (.40 5 ) 4.69 (.185) 1 D IM E N S IO N S & T O L E R A N C IN G
3.54 (.139)
2 .6 2 (.1 0 3 ) 4.20 (.165) P E R A N S I Y 14 .5 M , 1 9 8 2 .
-A- 1.32 (.052)
1.22 (.048) 2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 D IM E N S IO N S A R E S H O W N
6.47 (.255 )
M ILL IM E T E R S (IN C H E S ).
4 6.10 (.240 )
4 C O N F O R M S T O JE D E C O U T L IN E
1 5 .2 4 (.6 0 0 ) T O -2 2 0 A B .
1 4 .8 4 (.5 8 4 )
1.15 (.045)
M IN LEAD A S S IG N M E N T S
1 2 3 1- GA TE
3.96 (.160) 2- C O L LE C T O R
3X 3- E M IT T E R
3.55 (.140)
4- C O L LE C T O R
1 4 .0 9 (.5 5 5 )
1 3 .4 7 (.5 3 0 ) 4.06 (.160 )
3.55 (.140 )

0.93 (.037) 0.55 (.022)

3X 3X
1 .4 0 (.0 5 5 ) 0.69 (.027) 0.46 (.018)
3 X 1 .1 5 (.0 4 5 )
0 .3 6 (.01 4 ) M B A M
2.92 (.115)
2 .5 4 (.1 0 0) 2.64 (.104)
2X

CONFORMS TO JEDEC OUTLINE TO-220AB

D im e ns io ns in M illim e ters a nd (In c he s )

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
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IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 10/00

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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/