AOD450

N-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AOD450 uses advanced trench technology and
design to provide excellent R DS(ON) with low gate VDS (V) = 200V
charge. This device is suitable for use in inverter, load ID = 3.8A (VGS = 10V)
switching and general purpose applications. RDS(ON) <0.7Ω (VGS = 10V)

-RoHS Compliant 100% UIS Tested!

-Halogen Free* 100% Rg Tested!
193
18
TO-252
D-PAK Bottom View
Top View D
D

G
S
S G

G S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 200 V
Gate-Source Voltage VGS ±30 V
Continuous Drain TC=25°C 3.8
Current TC=100°C ID 2.7 A
C
Pulsed Drain Current IDM 10
C
Avalanche Current IAR 3 A
C
Repetitive avalanche energy L=1.35mH EAR 6 mJ
TC=25°C 25
B
PD W
Power Dissipation TC=100°C 12.5
TA=25°C 2.1
A
PDSM W
Power Dissipation TA=70°C 1.3
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 17.1 30 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 50 60 °C/W
Maximum Junction-to-Case B Steady-State RθJC 4 6 °C/W

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AOD450

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=10mA, VGS=0V 200 V
VDS=160V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±30V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 3 5 6 V
ID(ON) On state drain current VGS=10V, VDS=15V 10 A
VGS=10V, ID=3.8A 0.55 0.70
RDS(ON) Static Drain-Source On-Resistance Ω
TJ=125°C 1.1 1.32
gFS Forward Transconductance VDS=15V, ID=3.8A 8.7 S
VSD Diode Forward Voltage IS=1A, VGS=0V 0.8 1 V
IS Maximum Body-Diode Continuous CurrentG 6 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 215 pF
Coss Output Capacitance VGS=0V, VDS=25V, f=1MHz 32 pF
Crss Reverse Transfer Capacitance 7.2 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 5.5 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 3.82 nC
Qg(4.5V) Total Gate Charge 0.92 nC
VGS=10V, VDS=25V, ID=3.8A
Qgs Gate Source Charge 1.42 nC
Qgd Gate Drain Charge 1.47 nC
tD(on) Turn-On DelayTime 6.3 ns
tr Turn-On Rise Time VGS=10V, VDS=25V, RL=6.5Ω, 3.3 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 10.5 ns
tf Turn-Off Fall Time 2.8 ns
trr Body Diode Reverse Recovery Time IF=3.8A, dI/dt=100A/µs 59 ns
Qrr Body Diode Reverse Recovery Charge IF=3.8A, dI/dt=100A/µs 142 nC
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any a given application depends on the
user's specific board design, and the maximum temperature fo 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev1: Sep 2008

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AOD450

TYPICAL ELECTRICAL CHARACTERISTICS

14 1.0E+02

12 VDS=15V
10V 1.0E+01
10

8 8V 1.0E+00
ID(A)

ID(A)
6 4.6325°C
1.0E-01 125°C
4 7V
1.0E-02 494 593
2
VGS=6V 692 830
0 1.0E-03
0 5 10 15 20 2 4 6 8 10
VDS(Volts)
VGS(Volts)
Figure 1:On-Region Characteristics Figure 2: Transfer Characteristics
193
800 2.4
18

2.2
Normalized On-Resistance

700
VGS=10V 2 VGS=10V, 3.8A
600
RDS(ON) (mΩ )

1.8
500
1.6

400 1.4

300 1.2

1
200
0 1 2 3 4 5 6 7 0.8
0 25 50 75 59
100 125 150 175
ID (A)
Temperature (°C)
142
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage Figure 4: On-Resistance vs. Junction Temperature

1400 1.0E+01
ID=3.8A
1200 1.0E+00
125°C 125°C
1000
RDS(ON) (mΩ )

1.0E-01
IS (A)

800 1.0E-02

600 25°C 1.0E-03

25°C
400 1.0E-04

200 1.0E-05
6 8 10 12 14 16 18 20 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

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AOD450

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 300
VDS=10V
250 Ciss
8 ID=3.8A

Capacitance (pF)
200
VGS (Volts)

6
150
4.63
4
100 Coss
494 593
2
50 Crss 692 830

0 0
0 1 2 3 4 0 5 10 15 20 25
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
193
18
100.00 200
TJ(Max)=175°C, TC=25°C
160 TJ(max)=175°C
10.00
10µs TC=25°C
Power (W)

120
ID (Amps)

RDS(ON)
1.00 limited 100µ
80
1ms
0.10 DC 40

0
0.01
0.0001 0.001 0.01 59 0.1 1 10
0.1 1 10 100 1000
Pulse Width (s)
142
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Case (Note F)
Operating Area (Note F)

10
D=Ton/T In descending order
Zθ JC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RθJC=6°C/W
1

0.1 PD

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AOD450

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5 30
ID(A), Peak Avalanche Current

25

Power Dissipation (W)

4
20
3
15
2 4.63
10
TA=25°C 494 593
1 5
692 830
0 0
0.000001 0.00001 0.0001 0.001 0 25 50 75 100 125 150 175
TCASE (°C)
Time in avalanche, tA (s) Figure 13: Power De-rating (Note B)
Figure 12: Single Pulse Avalanche capability
193
18
5 50

TA=25°C
4 40
Current rating ID(A)

Power (W)

3 30

2 20

1 10

0 0 59
0 25 50 75 100 125 150 175 0.001 0.01 0.1 1
142 10 100 1000
TCASE (°C) Pulse Width (s)
Figure 14: Current De-rating (Note B) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient
Thermal Resistance

0.1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA PD
0.01
Single Pulse RθJA=60°C/W
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AOD450

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs td(on) tr td(off) tf

ton toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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