DMC1028UFDB

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Product Summary Features
ID max  Low On-Resistance
Device BVDSS RDS(ON) max
TA = +25°C  Low Input Capacitance
25mΩ @ VGS = 4.5V 6.0A  Low Profile, 0.6mm Max Height
Q1
12V 30mΩ @ VGS = 3.3V 5.5A  ESD HBM Protected up to 1.5KV, MM Protected up to 150V.
N-Channel
32mΩ @ VGS = 2.5V 5.3A  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
80mΩ @ VGS = -4.5V -3.4A  Halogen and Antimony Free. “Green” Device (Note 3)
Q2
P-Channel
-20V 90mΩ @ VGS = -3.3V -3.2A
100mΩ @ VGS = -2.5V -3.0A

Description Mechanical Data

This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Applications
Optimized for Point of Load (POL) Synchronous Buck Converter that
steps down from 3.3V to 1V for core voltage supply to ASICs. Target
applications are Ethernet Network Controllers used in:
 Routers, Switchers, Network Interface Controllers (NICs)
 Digital Subscriber Line (DSL)
 Set-Top Boxes (STBs)
U-DFN2020-6 (Type B)
S2
 Case: U-DFN2020-6 (Type B)
 Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals: Finish NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e4
 Terminals Connections: See Diagram Below
 Weight: 0.0065 grams (Approximate)
D1 D2

D2
G2 G1 G2
D1
D1
D2
ESD PROTECTED Gate Protection
G1
Diode S1 Gate Protection
Diode S2
S1
N-CHANNEL MOSFET P-CHANNEL MOSFET
Pin1
Bottom View Internal Schematic

Ordering Information (Note 4)

Part Number Case Packaging
DMC1028UFDB-7 U-DFN2020-6 (Type B) 3,000/Tape & Reel
DMC1028UFDB-13 U-DFN2020-6 (Type B) 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

D8 = Product Type Marking Code

YM

D8 YM = Date Code Marking

Y = Year (ex: C = 2015)
M = Month (ex: 9 = September)

Date Code Key

Year 2015 2016 2017 2018 2019 2020 2021
Code C D E F G H I
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D

DMC1028UFDB 1 of 10 May 2015

Document number: DS37634 Rev. 4 - 2 www.diodes.com © Diodes Incorporated
 DMC1028UFDB

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Q1 Q2
Characteristic Symbol Units
N-CHANNEL P-CHANNEL
Drain-Source Voltage VDSS 12 -20 V
Gate-Source Voltage VGSS ±8 ±8 V
Steady TA = +25°C 6.0 -3.4
ID A
State TA = +70°C 4.8 -2.7
Continuous Drain Current (Note 5) VGS = 4.5V
TA = +25°C 7.1 -4.0
t < 5s ID A
TA = +70°C 5.7 -3.2
Maximum Continuous Body Diode Forward Current (Note 5) IS 1.4 -1.4 A
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 40 -20 A
Avalanche Current L = 0.1mH IAS 12 -12 A
Avalanche Energy L = 0.1mH EAS 8.4 7.5 mJ

Thermal Characteristics
Characteristic Symbol Value Units
Steady State 1.36
Total Power Dissipation (Note 5) PD W
t < 5s 1.89
Steady State 92
Thermal Resistance, Junction to Ambient (Note 5) RθJA
t < 5s 66 °C/W
Thermal Resistance, Junction to Case (Note 5) RθJC 19
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Note: 5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.

Electrical Characteristics Q1 N-CHANNEL (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS 12 - - V VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current TJ = +25°C IDSS - - 1.0 μA VDS = 12V, VGS = 0V
Gate-Source Leakage IGSS - - ±10 μA VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS(TH) 0.4 - 1 V VDS = VGS, ID = 250μA
- 17 25 VGS = 4.5V, ID = 5.2A
- 19 30 VGS = 3.3V, ID = 5.0A
Static Drain-Source On-Resistance RDS(ON) mΩ
- 21 32 VGS = 2.5V, ID = 4.8A
- 30 40 VGS = 1.8V, ID = 2.5A
Diode Forward Voltage VSD - 0.7 1.2 V VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance Ciss - 787 - pF
VDS = 6V, VGS = 0V,
Output Capacitance Coss - 203 - pF
f = 1.0MHz
Reverse Transfer Capacitance Crss - 177 - pF
Gate Resistance Rg - 4.8 - Ω VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = 3.3V) - 7.9 - nC
Total Gate Charge (VGS = 4.5V) Qg - 10.5 - nC
Total Gate Charge (VGS = 8V) - 18.5 - nC VDS = 6V, ID = 6.8A
Gate-Source Charge Qgs - 1.2 - nC
Gate-Drain Charge Qgd - 2.9 - nC
Turn-On Delay Time tD(ON) - 4.6 - ns
Turn-On Rise Time tR - 9.4 - ns VDD = 6V, VGS = 4.5V,
Turn-Off Delay Time tD(OFF) - 15.7 - ns RL = 1.1Ω, RG = 1Ω
Turn-Off Fall Time tF - 3.7 - ns
Body Diode Reverse Recovery Time tRR - 12.0 - ns IS = 5.4A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge QRR - 1.8 - nC IS = 5.4A, dI/dt = 100A/μs

DMC1028UFDB 2 of 10 May 2015

Document number: DS37634 Rev. 4 - 2 www.diodes.com © Diodes Incorporated
 DMC1028UFDB

Electrical Characteristics Q2 P-CHANNEL (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS -20 - - V VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current TJ = +25°C IDSS - - -1.0 μA VDS = -20V, VGS = 0V
Gate-Source Leakage IGSS - - ±10 μA VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS(TH) -0.4 - -1 V VDS = VGS, ID = -250μA
- 55 80 VGS = -4.5V, ID = -3.8A
- 63 90 VGS = -3.3V, ID = -3.5A
Static Drain-Source On-Resistance RDS(ON) - 70 100 mΩ VGS = -2.5V, ID = -3.3A
- 88 140 VGS = -1.8V, ID = -1.0A
- 110 210 VGS = -1.5V, ID = -0.5A
Diode Forward Voltage VSD - -0.7 -1.2 V VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance Ciss - 576 - pF
VDS = -10V, VGS = 0V,
Output Capacitance Coss - 87 - pF
f = 1.0MHz
Reverse Transfer Capacitance Crss - 71 - pF
Gate Resistance Rg - 15 - Ω VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = -3.3V) - 5.2 - nC
Total Gate Charge (VGS = -4.5V) Qg - 6.7 - nC
Total Gate Charge (VGS = -8V) - 11.5 - nC VDS = -10V, ID = -4.9A
Gate-Source Charge Qgs - 1.0 - nC
Gate-Drain Charge Qgd - 2.0 - nC
Turn-On Delay Time tD(ON) - 3.5 - ns
Turn-On Rise Time tR - 3.6 - ns VDD = -10V, VGS = -4.5V,
Turn-Off Delay Time tD(OFF) - 20.8 - ns RL = 2.6Ω, RG = 1Ω
Turn-Off Fall Time tF - 12.7 - ns
Body Diode Reverse Recovery Time tRR - 13.1 - ns IS = -3.9A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge QRR - 3.9 - nC IS = -3.9A, dI/dt = 100A/μs
Notes: 6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.

DMC1028UFDB 3 of 10 May 2015

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Typical Characteristics - N-CHANNEL

20.0 15
VDS= 5V
18.0 VGS = 4.5V VGS = 1.8V
16.0 12

ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

14.0 VGS = 3.5V

12.0 VGS = 3.0V 9
TA = 125oC
10.0 VGS = 2.5V TA = -55oC
VGS = 1.5V 6
8.0 VGS = 2.0V

6.0
TA = 25oC
4.0 3 TA = 150oC
VGS = 1.2V VGS = 1.1V
2.0 TA = 85oC

0.0 0
0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3
VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic Figure 2 Typical Transfer Characteristic
0.05 0.1
RD S(ON ), DRAIN-SOURCE ON-RESISTANCE ( )

0.045 0.09
VGS = 1.8V 0.08
0.04
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (Ω)

0.035 0.07

0.03 0.06

VGS = 2.5V 0.05

0.025
ID = 2.5A
0.04
0.02
0.03
0.015 ID = 4.8A
VGS = 4.5V
VGS = 3.3V 0.02
0.01
0.01
0.005 ID = 5.2A
0
0 1 2 3 4 5 6 7 8
0 2 4 6 8 10 12 14 16 18 20
VGS, GATE-SOURCE VOLTAGE (V)
I D, DRAIN-SOURCE CURRENT (A)
Figure 4 Typical Transfer Characteristic
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.03 1.8
RDS(ON), DRAIN-SOURCE ON-RESISTANCE

VGS= 4.5V
TA = 125oC TA = 150oC
1.6
0.025
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (Ω)

VGS = 4.5V, ID = 10A

1.4
(NORMALIZED)

0.02 TA = 85oC
1.2

0.015 TA = 25oC
1 VGS = 1.8V, ID = 3A
TA = -55oC
0.01
0.8

0.005 0.6
0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 150
ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (℃)
Figure 5 Typical On-Resistance vs Drain Current Figure 6 On-Resistance Variation with
and Temperature Temperature

DMC1028UFDB 4 of 10 May 2015

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 DMC1028UFDB

Typical Characteristics - N-CHANNEL (continued)

0.05 1.2
RDS(ON), DRAIN-SOURCE ON-ESISTANCE (Ω)

VGS(th), GATE THESHOLD VOLTAGE (V)

0.045 1.1

0.04 1
0.9
0.035 VGS = 1.8V, ID = 3A
0.8
0.03 ID = 1mA
0.7
0.025 0.6
0.02 0.5
ID = 250µA
0.015 0.4
VGS = 4.5V, ID = 10A
0.01 0.3
0.2
0.005
0.1
0
0
-50 -25 0 25 50 75 100 125 150
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃)
Figure 7 On-Resistance Variation with Temperature
Figure 8 Gate Theshold Variation vs Junction
Temperature
20 10000

18 VGS = 0V f=1MHz
CT, JUNCTION CAPACITANCE (pF)

16
IS, SOURCE CURRENT (A)

14 Ciss
1000
12 TA = 125oC
10 Coss
TA = -55oC
8
100 Crss
6 TA = 150oC TA = 25oC

2 TA = 85oC

0 10
0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 12
VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance
8 100

RDS(ON)
Limited
6 10
ID, DRAIN CURRENT (A)
VGS (V)

DC
4 1
PW =10s
PW =1s
VDS = 6V, ID = 6.8A PW =100ms
2 0.1 TJ(Max)=150℃
TA=25℃ PW =10ms
VGS=4.5V
Single Pulse PW =1ms
DUT on 1*MRP Board PW =100µs
0 0.01
0 2 4 6 810 12 14 16 18 20 0.01 0.1 1 10 100
Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)
Fiure 11 Gate Charge Figure 12 SOA, Safe Operation Area

DMC1028UFDB 5 of 10 May 2015

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 DMC1028UFDB

Typical Characteristics - P-CHANNEL

20.0 10
VGS = -4.5V
18.0 VGS = -3.0V VDS = -5V
VGS = -3.5V
16.0 8

ID, DRAIN CURRENT (A)

VGS = -2.5V
ID, DRAIN CURRENT (A)

14.0

12.0 VGS = -2.0V 6

10.0
VGS = -1.8V
8.0 4

6.0 TA = 125oC
VGS = -1.5V
4.0 2 TA = -55oC
TA = 150oC
VGS = -1.2V TA = 25oC
2.0
TA = 85oC
0.0 0
0 1 2 3 0 0.5 1 1.5 2 2.5 3
VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)
Figure 13 Typical Output Characteristic Figure 14 Typical Transfer Characteristic
0.3 0.3
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( )

0.25 VGS = -1.5V 0.25

ID = -3.8A
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (Ω)

0.2 0.2

ID = -3.3A
VGS = -1.8V
0.15 0.15

VGS = -2.5V
0.1
0.1

ID = -1.0A
0.05
0.05
VGS = -4.5V VGS = -3.3V
0
0 0 2 4 6 8
1 3 5 7 9 11 13 15 17 19 21
ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)
Figure 15 Typical On-Resistance vs. Figure 16 Typical Transfer Characteristic
Drain Current and Gate Voltage

0.12 1.8
RDS(ON), DRAIN-SOURCE ON-RESISTANCE

VGS= -4.5V
1.6
0.1
RDS(ON), DRAIN-SOURCE

TA = 150oC
ON-RESISTANCE (Ω)

TA = 125oC
1.4
(NORMALIZED)

VGS = -4.5V, ID = -5.0A

0.08
1.2

0.06
1
TA = 85oC TA = 25oC VGS = -1.8V, ID = -1.0A
0.04
TA = -55oC 0.8

0.02 0.6
1 3 5 7 9 11 13 15 17 19 21 -50 -25 0 25 50 75 100 125 150
ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (℃)
Figure 17 Typical On-Resistance vs Drain Figure 18 On-Resistance Variation with
Current and Temperature Temperature

DMC1028UFDB 6 of 10 May 2015

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 DMC1028UFDB

Typical Characteristics - P-CHANNEL (continued)

0.14 1

VGS(th), GATE THESHOLD VOLTAGE (V)

0.12
VGS = -1.8V, ID = -1.0A 0.8
RDS(ON), DRAIN-SOURCE
ON-ESISTANCE (Ω)

0.1
ID = -1mA
0.6
0.08

0.06
0.4
ID = -250µA
0.04 VGS = -4.5V, ID = -5.0A
0.2
0.02

0 0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃)
Figure 19 On-Resistance Variation with Figure 20 Gate Theshold Variation vs Junction
Temperature Temperature
20 10000

18 f=1MHz
VGS = 0V CT, JUNCTION CAPACITANCE (pF)
16
IS, SOURCE CURRENT (A)

14
1000 Ciss
12

10

8 TA = 150oC
Coss
100
6 TA = 125oC
4 TA = 25oC Crss
TA = 85oC
2 TA = -55oC
0 10
0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 12 14 16 18 20
VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 21 Diode Forward Voltage vs. Current Figure 22 Typical Junction Capacitance

DMC1028UFDB 7 of 10 May 2015

Document number: DS37634 Rev. 4 - 2 www.diodes.com © Diodes Incorporated
 8 100
RDS(ON) DMC1028UFDB
Limited

PW =100ms

ID, DRAIN CURRENT (A)

6 10
VGS (V)

4 1 DC
PW =10s
PW =1s
VDS = -10V, ID = -4.9A TJ(Max)=150℃
2 0.1
TA=25℃ PW =10ms
VGS=4.5V
Single Pulse PW =1ms
DUT on 1*MRP Board PW =100µs
0 0.01
0 2 4 6 8 10 12 0.1 1 10 100
Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 23 Gate Charge Figure 24 SOA, Safe Operation Area

Typical Characteristics - P-CHANNEL (cont.)

1
r(t), TRANSIENT THERMAL RESISTANCE

D=0.5 D=0.9
D=0.3 D=0.7

0.1
D=0.1

D=0.05

D=0.02
0.01
D=0.01

D=0.005 RθJA(t)=r(t) * RθJA

RθJA=166℃/W
Duty Cycle, D=t1/t2
D=Single Pulse
0.001
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, PULSE DURATION TIME (sec)
Figure 25 Transient Thermal Resistance

DMC1028UFDB 8 of 10 May 2015

Document number: DS37634 Rev. 4 - 2 www.diodes.com © Diodes Incorporated
 DMC1028UFDB

Typical Application Circuit

DMC1028UFDB is designed for Point-of-Load (POL) converter that is stepping down from a nominal 3.3V to 1V with a load current up to 3A. This
is implemented with a separate ASIC that is PWM signaling the complementary MOSFETs to act as a synchronous buck converter. The control
switch (Q2) is implemented with P-channel MOSFETs to avoid needing a charge pump and with the 3.3V to 1V step down, which has a duty cycle
of 33%. This means that for 67% of the cycle, the synchronous switch (Q1) is on and efficiency is dominated by the conduction losses; hence, the
need for low RDS(on) N-channel MOSFETs. Whereas for the control switch (Q2), the gate charge needs to be minimized as the switching losses
become significant.

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

U-DFN2020-6
A A3 Type B
SEATING PLANE Dim Min Max Typ
A1 A 0.545 0.605 0.575
D
A1 0 0.05 0.02
A3   0.13
Pin#1 ID
D2 b 0.20 0.30 0.25
D 1.95 2.075 2.00
z
d   0.45
d D2 0.50 0.70 0.60
E e   0.65
E2
f f E 1.95 2.075 2.00
E2 0.90 1.10 1.00
L
f   0.15
L 0.25 0.35 0.30
e b z   0.225
All Dimensions in mm

DMC1028UFDB 9 of 10 May 2015

Document number: DS37634 Rev. 4 - 2 www.diodes.com © Diodes Incorporated
 DMC1028UFDB

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Y C

G
X2 Dimensions Value (in mm)
Z 1.67
G1 G 0.20
X1 G1 0.40
X1 1.0
X2 0.45
G Y 0.37
Y1 Y1 0.70
Z C 0.65

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Copyright © 2015, Diodes Incorporated

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DMC1028UFDB 10 of 10 May 2015

Document number: DS37634 Rev. 4 - 2 www.diodes.com © Diodes Incorporated