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L EA R N I N G O B J E CT IV E S
After reading this chapter, the learner should be able to:
Characteristics of amplifiers.
Various amplifier power relations.
Basic of stability circle for input and output.
Know the gain calculation for amplifier.
Calculation of noise figure.
Know the types of matching networks and their frequency response.
Various types of microstrip matching networks.
2.1 Introduction
⌫S ⌫L
Input Output
RF Matching Matching PL
[S] Load
Source Network Network
(IMN) (OMN)
⌫out
⌫in
DC bias
The following are the various power relations available for amplifier.
They are
1. Available power (PA )
2. Transducer power gain (GT )
3. Unilateral power gain (GTU )
4. Available power gain (GA )
5. Operating power gain (G)
The power gain definitions are very critical to understand that how an RF
amplifier functions. In order to get the power flow relations Figure 2.1
is modified under some assumption that the two matching networks are
included in the source and load impedances.
The simplified diagram is shown in Figure 2.2(a). the starting point
of our power analysis is the RF source connected to the amplifier
network. The source voltage is written by,
√
ZO
bs = Vs
ZS + ZO
= b1 − a1 s
⌫S ⌫L ⌫S
a⬘2
b⬘1 a1 b2 b⬘1
Pinc PL
ZS ZS
[S] ZL
⇒
~ Zin
VS VS ~
a⬘1 b⬘2 a⬘1
b1 a2
⌫in
⌫in ⌫out
bS b⬘1 a1 S21 b2 1 a⬘2
b1‘
bS
⌫S S11 S22 ⌫L ⇒ ⌫S
⌫in
1 1
b⬘2 a⬘1
a⬘1 b1 S12 a2
Figure 2.2 Source and load connected to a single-stage amplifier network. (a)
Simplified schematics of a single-stage amplifier. (b) Signal flow graph.
a
bs = b1 1 − 1 s
b1
bs = b1 [1 − in s ] (2.1)
|b1 |2
Pinc = (2.2)
2
substitute b1 value from equation (2.1) in (2.2), that is
bs
b1 =
1 − in s
therefore
1 |bs |2
Pinc = (2.3)
2 |1 − in s |2
Which is the power launched toward the amplifier. The actual input
power (Pin ) observed at the input terminal of the amplifier is composed
of the incident and reflected power waves.
1 |bs |2
Pin = (1 − |in |2 ) (2.5)
2 |1 − in s |2
The maximum power transfer of the amplifier from the source is
achieved if the input impedance is complex conjugate matched i.e.,
(Zin = ZS∗ ) or with respect to the reflection coefficients (in = s∗ ).
1 |bs |2 (1 − |in |2 )
PA =
2 |1 − s∗ s |2
1 |bs |2 (1 − |in |2 )
PA =
2 |1 − |s |2 |2
1 |bs |2 (1 − |in |2 )
= [∵ |Z|2 = Z · Z ∗ ]
2 (1 − |s |2 )(1 − |s∗ |2 )
1 |bs |2 (1 − |in |2 )
= [∵ s∗ = in ]
2 (1 − |s |2 )(1 − |in |2 )
1 |bs |2
PA = (2.6)
2 (1 − |s |2 )
PL
∴ GT =
PA
1 2 2
2 |b2 | (1 − |L | )
=
1 |bs |2
2 1−|s |2
|b2 |2
GT = (1 − |L |2 )(1 − |s |2 ) (2.7)
|bs |2
b2
From equation (2.7) bs is unknown. Based on equation (2.2), b2 , bs is
obtained as,
S21 a1
b2 = (2.9a)
1 − S22 L
S12 S21 L
bs = 1 − S11 + s a1 (2.9b)
1 − S22 L
divide the equation (2.9(a)) and (2.9(b))
S21 a1
b2 1 − S22 L
=
bs a1 [(1 − S22 L ) − s S11 (1 − S22 L ) − S12 S21 L s ]
1 − S22 L
b2 S21
= (2.10)
bs (1 − S22 L )(1 − S11 s ) − S12 S21 L S
substitute equation (2.10) in equation (2.7),
bS = (1 − in S )a1
Now find,
b2 2 a
S21
1
= 2 2
bs (1 − S22 L ) (1 − in S ) a1
b2 |S21 |2
= (2.12c)
bs (|1 − S22 L )|2 |1 − in S |2
∗ |2 )
|S21 |2 (1 − |s |2 )(1 − |out
GA = ∗ )2 |1 − S |2
(1 − out out 11 s
∗ )
|S21 |2 (1 − |s |2 )(1 − out out
= ∗ 2
(1 − out out ) |1 − S11 s |2
|S21 |2 (1 − |s |2 )
= ∗ )2 |1 − S |2
(1 − out out 11 s
|S21 |2 (1 − |s |2 )
GA = [|Z|2 = Z · Z ∗ ] (2.16)
(1 − |out |2 )|1 − S11 s |2
PL P A
G= ·
PA Pin
PA
= GT ·
Pin
1 |bS |2
(1 − |L |2 )|S21 |2 (1 − |s |2 ) 2 1−|s |2
G= ·
|1 − s in |2 |1 − S22 L |2 1 |bs |2 (1−|in |2 )
2 |1−in s |2
(1 − |L |2 )|S21 |2
G= (2.17)
(1 − |in |2 )|1 − S22 L |2
P r o b l e m 2.1
An RF amplifier has the following S parameter: S11 = 0.3∠−70◦ ,
S21 = 3.5∠85◦ , S12 = 0.2∠−10◦ and S22 = 0.4∠−45◦ . Furthermore
the input side of the amplifier is connected to a voltage source with
VS = 5V ∠0◦ and source impedance ZS = 40. The output is utilized
to derive an antenna which has an impedance of ZL = 73. Assuming
that the S-parameter of the amplifier are measured with reference to a
ZO = 50 characteristic impedance, find the following quantities:
Solution: Given
S11 = 0.3∠−70◦
S22 = 0.4∠−45◦
S21 = 3.5∠85◦
S12 = 0.2∠−10◦
VS = 5V ∠0◦
ZS = 40
ZL = 73
ZO = 50
S12 S21 L
in = S11 +
1 − S22 L
in = 0.3∠−70◦
0.2 × 3.5∠85◦ ∠−10◦ × 0.187
+
1 − 0.4∠−45◦ × 0.187
= 0.146 − j0.151
S12 S21 S
out = S22 +
1 − S11 S
= 0.265 − j0.358
(1 − |L |2 )|S12 |2 (1 − |S |2 )
Transducer gain, GT =
|1 − L out |2 ||1 − S11 S |2
= 12.56 or 10.99 dB
(1 − |L |2 )|S21 |2 (1 − |S |2 )
Unilateral Transducer gain, GTU =
|1 − L S22 |2 ||1 − S11 S |2
= 12.67 or 11.03 dB
|S21 |2 (1 − |S |2 )
Available gain, GA =
|1 − |out |2 ||1 − S11 S |2
= 14.74 or 11.68 dB
(1 − |L |2 )|S21 |2
Operating power gain, G =
|1 − L in |2 ||1 − S22 L |2
= 13.74 or 11.38 dB
Since for a particular frequency S-parameters are fixed, the only factor
affects the stability are L and S . Let us consider the complex quantities
as
R I
S11 = S11 + jS11
R I
S22 = S22 + jS22
= R + jI
L = LR + jLI (2.20)
(LR − Cout
R 2
) + (LI − Cout
I 2 2
) = γout (2.22)
(SR − Cin
R 2
) + (SI − Cin
I 2
) = γin2 (2.25)
⌫out =1
I ⌫in =1
Y in
⌫L ⌫⬘S ⌫S =1
Yout C
in
⌫L =1 Cout
C
C in
out R
⌫L
R
⌫S
Figure 2.3 Stability circle |in = 1| in the complex L plane and stability circle
|out | = 1 in the complex S plane. (a) Output stability circle. (b) Input stability
circle.
For stability circles, the circle radius is larger than |Cin | or |Cout |.
Figure 2.6 shows the input stability circles for |S22 | < 1 and two stability
domains are possible depends on γin < |Cin | or γin > |Cin |.
The stability circles have to reside completely outside the |S | = 1 and
|L | = 1 circles. Figure 2.7(a) shows |S | = 1 circle.
∗
|(S11 − S22 )|2 = |S12 S21 |2 + (1 − |S22 |2 )|S11 |2 − ||2 (2.29c)
Let define the determinant of the S matrix and factors k and B1 as,
= S11 S22 − S12 S21 (2.30)
|2
1 − |S11 − |S22 |2 + ||2
K= (2.31)
2|S12 S21 |
B1 = 1 + |S11 |2 − |S22 |2 − ||2 (2.32)
Based on these definitions, a two port network will be unconditionally
stable if, and only if, either one of the following criteria are satisfied.
Case (i): Three-parameter test criterion:
K >1 (2.33)
1 − |S11 |2
>1 (2.34)
|S12 S21 |
1 − |S22 |2
>1 (2.35)
|S12 S21 |
Case (ii): Two-parameter test criterion (K- test)
K >1 (2.36)
|| < 1 (2.37)
This is called K- Test.
The two parameter test cannot be used to show the degree of stability
of one device to other. In order to check whether the device is stable
or not and degree of stability, a new parameter test is possible i.e.,
“µ-parameter test”.
The µ parameter is defined as,
1 − |S11 |2
µ= ∗ | + |S S | (2.43)
|S22 − S11 21 12
µA > µB (2.44)
P r o b l e m 2.2
Determine the stability of a GaAs FET that has the following S-
parameters at 2 GHz in a 50 system both graphically and mathematically.
S11 = 0.89∠−60◦
S21 = 3.1∠123◦
S12 = 0.02∠62◦
S22 = 0.78∠−27◦
CL = 1.36∠47◦
RL = 0.5
CS = 1.13∠68◦
RS = 0.2
= S11 S22 − S21 S12
= 0.03933 − 0.69j + 0.06 + (4.29 × 10−3 j)
= 0.099 − 0.68j
= 0.687∠−81.7◦
RL = 0.44
S12 S21
RS =
DS
3.099 × 0.019
= = 0.18
0.318
RS = 0.2
|in | = |S11 | = 0.89 < 1
|out | = |S22 | = 0.78 < 1
P r o b l e m 2.3
A BJT has the following S-parameters:
S11 = 0.65∠−95◦
S21 = 5.0∠115◦
S12 = 0.035∠40◦
S22 = 0.8∠−35◦
In this transistor unconditionally stable? If not, use resistive loading to
make the transistor conditionally stable. What are the resistor values?
Solution:
S11 = 0.65∠−95◦
= −0.05665 − 0.647j
|S11 | = 0.649
S21 = 5.0∠−115◦
= −2.113 + 4.53j
|S21 | = 4.998
S12 = 0.035∠40◦
= 0.0268 + 0.022j
|S12 | = 0.034
S22 = 0.8∠−35◦
= 0.655 − 0.458j
|S22 | = 0.799
= S11 S22 − S12 S21
= ((0.65∠−95◦ )(0.8∠−35◦ )) − ((0.035∠40◦ )(5.0∠115◦ ))
= −0.175 − 0.472j
= 0.503∠−110.34◦
|| = 0.503
1 − |S11 |2 − |S22 |2 + ||2
K=
2|S12 S21 |
1 − |0.649|2 − |0.799|2 + |0.503|2
=
214.998 × 0.034|
K = 0.56
DL = |S22 |2 − ||2
= 0.385392
S12 S21
RL =
DL
0.034 × 4.998
=
0.385392
RL = 0.44
DS = |S11 |2 − ||2 = 0.6492 − 0.5032
DS = 0.168192
S12 S21
RS =
D
S
0.034 × 4.998
RS =
0.168192
RS = 1.01
CL = 1.3∠48◦
CS = 1.79∠122◦
∗ )∗
(S22 − S11
CL =
DL
[(0.655 − 0.458j) − ((−0.175 − 0.472j)(−0.05665 + 0.647j))]∗
=
0.385392
0.25 + 0.61j
=
0.385392
= 0.64 + 1.58j
CL = 1.7∠67.9◦
∗ )∗
(S11 − S22
CS =
DS
[−0.05665 − 0.647j − ((−0.175 − 0.472j × 0.665 + 0.458j))]∗
=
0.168192
−0.158201 − 0.25769j
=
0.168192
= −0.94 − 1.532j
CS = 1.797∠121.5◦
(a) (b)
R1=9Ω
R2=71Ω
(c) (d)
R3=43Ω
R4=500Ω
2.4.1 Introduction
Gain consideration in an amplifier plays a major role in design pro-
cess. In an amplifier after the stability, the power gain is an important
parameter.
PL
Transducer power gain, GT ≡ (2.48)
PAVS
PL
Operating power gain (also called power gain), GP ≡ (2.49)
Pin
PAVN
Available power gain, GA ≡ (2.50)
PAVS
1 − |S |2 2 1 − |L |
2
GT = |S21 | (2.51)
|1 − in · S |2 |1 − S22 L |2
GT = GS · GO · GL (2.52)
⌫S ⌫in ⌫out ⌫L
Zo
Input Output
+ Microwave
matching matching
E ~ Transistor
network network
− [S] M0
M1 M2
⌫a ⌫in ⌫L ⌫out ⌫L ⌫b
Lossless Lossless
Transistor PL PL
Source Pin network Pin network Load
(BJT or FET)
M1 M2
where
1 − |S |2
GS = (2.53)
|1 − in · S |2
GO = |S21 |2 (2.54)
1 − |L |2
GL = (2.55)
|1 − S22 L |2
From equation (2.52),
GO ⇒ Gain of the transistor.
GS ⇒ Effective gain of the input matching networks.
GL ⇒ Effective gain of the output matching networks.
1 − |S |2 2 1 − |L |
2
GT = |S21 | (2.56)
|1 − S11 S |2 |1 − out L |2
(b) Operating power gain (GP ),
1 2
2 1 − |L |
GP = |S21 | (2.57)
|1 − in |2 |1 − S22 L |2
(c) Available power gain (GA ),
1 − |S |2 1
GA = 2
|S21 |2 (2.58)
|1 − S11 S | |1 − out |2
where
S12 S21 L
in = S11 + (2.59)
1 − S22 L
S12 S21 S
out = S22 + (2.60)
1 − S11 S
where
therefore MS ≤ 1
GT
MS = (2.68)
GP
1 − |S |2 2 1 − |L |
2
· |S 21 |
|1 − S11 S |2 |1 − out L |2
MS =
1 2
1 − |L |2
· |S 21 |
|1 − in |2 |1 − S22 L |2
(1 − |S |2 )(1 − |L |2 )
MS = [∴ in = S11 ; out = S22 ] (2.69)
|1 − S in |2
The source mismatch factor (MS ) is used to quantify the portion of PAVS
that is delivered to the input of the transistor.
If the input part is matched (i.e., in = s∗ ) then Pin = PAVS
i.e., MS = 1. It means that all the available power from the source is
delivered to the transistor and no mismatch exists at the input port.
Pin = PAVS
in =S∗
MS = 1 (2.70)
1 − |S |2 2 1 − |L |
2
· |S 21 |
|1 − S11 S |2 |1 − S22 L |2
ML = 2
1 − S | 1
· |S21 |2
|1 − S11 S | 1 − |out |2
(1 − |L |2 )(1 − |out |2 )
ML = (2.73)
|1 − out L |2
The load mismatch factor (ML ) is used to quantify the portion of PAVN
that is delivered to the load. If the output port is matched (i.e., out = L∗ )
then PL = PAVN i.e., ML = 1.
Note: The “mismatch factor” is also called “mismatch loss” which (in
dB ) signifies the amount of power loss due to mismatch. From equation
(2.62) and (2.66), ML and MS can be written as,
The mismatch factor (ML ) remains unchanged at the input and output
of the loss less matching network (M2 ) i.e.
|a | = 1 − MS (2.79)
Thus
ML = 1 − |b |2 (2.81b)
where
Z b − ZO
Rb = (2.82)
Zb + ZO
From equation (2.81(b)), we can write,
|b | = 1 − ML (2.83)
From equation (2.54), we can observe that because GO is fixed for any
given transistor, the overall gain of the amplifier is controlled by the
gain blocks GS and GL corresponding to the input and output matching
networks respectively.
Therefore, in order to obtain the maximum possible gain from the
amplifier circuit, we must maximize GS , GL values which effectively
implies that the input and output matching sections must provide a
conjugate match at the transistor’s input and output port. Furthermore,
under this conjugate matched condition at the input and the output of
the transistor, maximum power will be transferred into the input port
and out of the output port as shown in Figure 2.7.
Based on the conjugate impedance matching concept, maximum
power transfer from the input matching network to the transistor and
from the transistor to the output matching network will occur when,
(PIN)max
(Pout)max
ZO
+ Input Output
E ~ Matching Matching ZO
− Network Network
ZS ZS Z*L ZL
GS 1 − |S |2
gS = = (1 − |S11 |2 ) (2.98)
GS·max |1 − S11 S |2
GL 1 − |L |2
gL = = (1 − |S22 |2 ) (2.99)
GL·max |1 − S22 L |2
From equation (2.85) and (2.87), the values of S and L that produce
a constant gain (or normalized gain) lie in a circle in Smith chart. These
circles are called constant GS and GL circles respectively. To obtain
the equations for these circles, we start with equation (2.98) and (2.99).
It is shown that the values of S or L that produce a constant value of
gS or gL lie in a circle described by the following equations:
where the center and radius (CS , RS ) and (CL , RL ) for each of the two
circles are given by,
gS S11∗
Cgs = (2.101a)
1 − |S11 |2 (1 − gS )
(1 − gS )(1 − |S11 |2 )
Rgs = (2.101b)
1 − |S11 |2 (1 − gS )
and
gL S22∗
CgL = (2.102a)
1 − |S22 |2 (1 − gL )
(1 − gL )(1 − |S22 |2 )
RgL = (2.102b)
1 − |S22 |2 (1 − gL )
(a) (b)
Im ( ⌫L ) Im ( ⌫L )
GL
RgL
S11∗
S22∗ Cgs
CgL Rgs
α2 α1
Re (⌫L ) Re (⌫L )
2.9.1 Observations
(a) From equations (2.101) and (2.102), we note that when gS or gL = 1
(i.e., maximum gain condition), we have
RgS = 0 (2.103a)
RgL = 0 (2.103b)
∗
CgS = S11 (2.103c)
and
∗
CgL = S22 (2.103d)
This indicates that the maximum gain occurs only at one point
∗ and S ∗ in the or plane respectively. This
located at S11 22 S L
observations is in agreement with our earlier results as expressed
by the equations (2.88) and (2.89).
(b) The 0 dB circles (i.e., GS = 1, GL = 1) will always pass through
the origin (i.e., S = 0, L = 0 points). This can be shown by
noting that gS from equation (2.98) can be written as,
GS = 1 when S = 0
gS = 1 − |S11 |2
|CgS | = RgS
S11
= (2.104a)
1 + |S11 |2
Similarly for GL ,
GL = 1 when L = 0
gL = 1 − |S22 |2
|CgL | = RgL
S22
= (2.104b)
1 + |S22 |2
which shows that the radius and distance from the origin to the
center of the 0 dB constant GS or GL circle are identical and proves
our observation.
(c) At the outer stage of Smith chart.
|S | = 1 ⇒ GS = 0 = −∞ dB
|L | = 1 ⇒ GL = 0 = −∞ dB
Because this gain value is impossible to achieve, the gain circles
never intersect the outer edge of Smith chart.
(d) For particular gain value, there are an infinite number of points on
the constant gain circle that provide the same gain. Thus the choices
of S and L along the constant gain circles are not unique, but in
order to minimize mismatch loss and maximum bandwidth it is best
to choose points close to the center of Smith chart. This is true only
for cases where noise is not of importance. In fact, for low noise
amplifier design we need to use mismatch at the input matching
networks in order to obtain minimum noise from the amplifier.
GT
It can be shown that the ratio of GTU is bounded by,
1 GT 1
2
< < (2.107)
(1 + |X | ) GTU (1 − |X |2 )
when S = S11∗ and = S ∗ achieves its maximum value, G
L 22 TU ·max .
The maximum error introduced using the unilateral assumption (i.e.,)
using GTU instead of GT is bounded by,
1 GT 1
2
< < (2.108)
|1 + U | GTU ·max |1 − U |2
where
|S12 ||S21 ||S11 ||S22 |
U= (2.109)
(1 − |S11 |2 )(1 − |S22 |2 )
U is defined to be the unilateral figure of merit which varies with the
frequency due to its S-parameter dependence. Thus U needs to be calcu-
lated at each frequency in order to obtain the limits of the error involved
due to the unilateral assumption. From the Table 2.1 which lists various
values of U versus GGTUT
, we can determine if the calculated value of U
gives a tolerable error value for GGUT .
Usually an error of a few tenths of a dB in the GTUGT·max ratio is
justifiable when using the unilateral assumption.
GT
Table 2.1 Tabulation of values of ‘U ’ versus GTU ·max .
U R = GT /GU
(Ratio) (dB) (Ratio) (dB)
0.010 −20.0 0.980 < R < 1.020 −0.086 < R < 0.087
0.020 −17.0 0.961 < R < 1.041 −0.170 < R < 0.180
0.030 −15.2 0.943 < R < 1.063 −0.26 < R < 0.26
0.040 −14.0 0.925 < R < 1.085 −0.34 < R < 0.36
0.050 −13.0 0.907 < R < 1.108 −0.42 < R < 0.45
0.060 −12.2 0.890 < R < 1.132 −0.51 < R < 0.59
0.070 −11.5 0.873 < R < 1.156 −0.59 < R < 0.63
0.080 −11.0 0.857 < R < 1.181 −0.67 < R < 0.72
0.090 −10.5 0.842 < R < 1.208 −0.75 < R < 0.82
0.10 −10.0 0.826 < R < 1.235 −0.83 < R < 0.92
0.11 −9.6 0.812 < R < 1.262 −0.91 < R < 1.01
0.12 −9.2 0.797 < R < 1.291 −0.98 < R < 1.11
0.13 −8.9 0.783 < R < 1.321 −1.06 < R < 1.21
0.14 −8.5 0.769 < R < 1.352 −1.13 < R < 1.31
0.15 −8.2 0.756 < R < 1.384 −1.25 < R < 1.41
S12 S21 L
in = S∗ = S11 + (2.110)
1 − S22 L
S12 S21 S
out = L∗ = S22 + (2.111)
1 − S11 S
1 2
2 1 − |L |
GT = |S21 | (2.112)
1 − |S |2 |1 − S22 L |2
where
substitute for MS and ML from equations (2.113a) and (2.113b) and
(2.117), we obtain,
|S21 |
GT ·max = (K − K 2 − 1) (2.118)
|S12 |
where K was defined earlier as one of the stability and it is defined as,
Pn = GA KTe B (2.119a)
(Po )i = GA PNi = GA KBio (2.119b)
(Po )tot = PN o = Pn + (Po )i (2.120)
T0 PNO
GABTe
R
(Po )tot
F= (2.119)
(Po )i
(PO )i + Pn
=
(Po )t
Pn
=1 + (2.121a)
GA PNi
or
ie
F =1+ (2.121b)
T0
or in dB we can write,
ie
F = 10 log10 1+ (2.122)
T0
1≥F ≥∞ (2.123)
The lower boundary (F = 1) is the best case scenario and is the noise
figure of an ideal noiseless amplifier where Te = 0. From equation
(2.121b), we can write,
Te = (F − 1)T0 (2.124)
PNo PNo
F= = (2.127)
(Po )i GA PNi
Pso
GA =
Psi
where Pso and Psi are the available signal power at the output and the
input respectively. Thus equation (2.127) can now be written as,
Psi /PNi
F=
Pso /PNo
(SNR)i
= (2.128)
(SNR)o
where (SNR)i and (SNR)0 are the available signal to noise ratio at the
input and output parts respectively. Equation (2.128) indicates that the
noise figure can also be defined in terms of the ratio of the available
SNR ratio to the input to the available SNR at the output.
1
GA = (GA < 1) (2.129)
L
Because of the gain of a lossy network is less than unity it follows that the
loss can attenuation factor (L) is more than unity (i.e., L = Pi /Po > 1)
for any lossy network or component.
Expressing the attenuation factor (L) in dB gives the following.
Pi
L(dB) = 10 log10 (2.130)
Po
Lossy network
GA1 B1 T R
T0
For example, if the lossy component attenuates the input power by ten
times then we can write,
Po 1
GA = = 0.1 ⇒ L = = 10 dB
Pi GA
If the lossy network is held at temperature (T ), the total variable output
noise power according to the equation PN = KTB is given by,
PNo = KTB (2.131)
On the other hand, from equation (2.125) the available output noise
power is also given by the addition of the input noise power and the
generated noise inside the circuit (Pn ).
PNo = GA KTB + Pn
KTB
= + Pn (2.132)
L
where Pn is the noise generated inside the two port network. Equating
equations (2.131) and (2.132), we obtain Pn as,
L−1
Pn = KTB (2.133a)
L
(Pn )i = Pn /GA = LPn = (L − 1)KTB (2.133b)
using equation (2.133(b)), we can now define the equivalent noise tem-
perature (Te ) of a lossy two port network referred to the input terminals
as,
(Pn )i
Te = ⇒ Te = (L − 1)T (2.134)
KB
Thus the noise figure of a lossy network is given by,
Te T
F =1+ = 1 + (L − 1) (2.135)
T0 T0
Special Case
RN
GA1 GA1
TO
PNo2 PNo1 50Ω
Te1 Te1
PNS
F1 F1
The overall noise figure (F) for the two-stage amplifier is found by
using equation (2.141).
Te
F =1+
T0
Te2
= 1 + Te1 + T0 (2.142)
GA1
By noting that,
Te1
F1 = 1 + (2.143)
T0
Te2
F2 = 1 + (2.144)
T0
Equation (2.142) can be written as,
F2 − 1
F = F1 + (2.145)
GA1
Equation (2.141), (2.142) shows that the first stage noise figure F1
(or noise temperature Te1 ) and gain (GA1 ) have a large influence on the
overall noise figure (or noise temperature). This is because the 2nd stage
noise figure F2 (or noise temperature, Te2 ) is reduced by gain of the first
stage (GA1 ).
Thus the key to low overall noise figure, is a primary focus on the
first stage by reducing its noise and increasing its gain. Later stages
have a generally reduced effect on the overall noise figure.
Noise Measure
50Ω
Te1 Te2 Ten
F1 F2 Fn
Case II: M2 > M1 , then amp2 should preceede amp1, because F21 <
F12 .
where F12 is a overall noise figure of the two-stage amplifier when ampl
precedes amp2, and vice versa, F21 is for the case when amp2 precedes
amp1.
Note: It can be easily be shown mathematically that, for example if
M1 < M2 then
F12 < F21 (2.147)
where
F2 − 1
F12 = F1 + (2.148)
GA1
F1 − 1
F21 = F2 + (2.149)
GA2
Special Case
F −1
M= (2.158)
1 − 1/GA
Fmin − 1
Mmin = (2.160)
1 − 1/GA
GA −→ ∞ ⇒ M = F − 1 (2.162)
Te,cas = Te (2.163a)
Fcas = F (2.163b)
It can be shown that the noise figure of a two port networks is given by,
rn
F = Fmin + |Ys − Yopt |2 (2.164)
gs
1 − s
Ys = (2.165)
1 + s
1 − opt
Yopt = (2.166)
1 + opt
|s − opt |2
N = (2.168)
1 − |s |2
4rn N
F = Fmin + (2.169)
|1 + opt |2
|s − opt |2
N =
1 − |s |2
F − Fmin
= |1 + opt |2 (2.170)
4rn
From equation (2.170) we can see that for a fixed (F), the
parameter (N ) is a positive real number (because F ≥ Fmin ).
Note 2: Noise parameter may also be determined experimentally by
the following procedure.
(a) Vary s until a minimum noise figure occurs. This is
recorded as Fmin .
(b) Now, using a vector network analyzer, measure s , which
provides the value for opt .
(c) We find rn , by setting s to zero and then measure the noise
figure F0 at this point. By using the equation (2.167) and
the value of opt from the second step, we can obtain rn
as,
|1 + opt |2
rn = F (2.171)
4|opt |2
where
F = F0 − Fmin
2.14.1 Analysis
By using equation (2.170) and through rearranging terms and further
mathematical manipulation of equation (2.167) we obtain an equation
for a circle in the s plane as,
|s − CF | = RF (2.172)
where CF and RF are the center and radius of noise figure circles given
by,
opt
CF = (2.173)
N +1
N 2 + N (1 − |opt |2 )
RF = (2.174)
1+N
Equation (2.173) represents a family of noise figure circles with the
noise figure (F) value as a parameter.
Note: For the derivation of constant noise figure circles. Derivation
of the constant gain and noise figure circles. When F = Fmin then
s = opt ⇒ N = 0 (2.175)
CF = opt (2.176)
RF = 0 (2.177)
Fmin
⌫opt
F1
F2
F3
⌫S Plane
Figure 2.13 Family of noise figure circles all located on opt vector.
Equations (2.176) and (2.177) indicate that Fmin is a point uniquely
located at opt . Furthermore from equation (2.170) we can see that
because W is a positive real number, then all noise figure circles have
centers located along opt vector in the s plane as shown in Figure
2.13.
∗ + ∗
2
s opt s opt |opt |2 N
|s | − + =
1+N 1+N 1+N
Now add |opt |2 /(N + 1)2 to both sides of the above equation to obtain
the desired relation for the constant noise circle (center and radius) as
given by the equations (2.176) and (2.177).
For many practical circuits matching networks are not only designed
to meet the requirements of minimum power loss but are also based on
additional constraints such as minimizing the noise influence, maxi-
mizing the power handling capabilities and linearizing the frequency
response.
The first approach yields very precise results and is suitable for computer
synthesis. Alternatively, the second approach is more intuitive easier to
verify and faster for an initial design, since it does not require any
complicated computations.
Instead of these methods we can use the smith chart for the rapid
and relatively precise designs of matching circuits. The appeal of this
c c c2 c1
ZS ZL ZS ZL ZS ZL ZS ZL
L L c1 c2
ZS L1 ZL ZS L2 ZL ZS ZL ZS ZL
c c
ZL
ZL
(b)
(d)
ZS
ZS
0.2
0.2
0.2
0.2
5.0
5.0
5.0
5.0
0.2 0.2
5.0 5.0
0.5 0.5
0.5
2.0 0.5
2.0
2.0 2.0
2.0 2.0
2.0 2.0
0.5 0.5
2.0 2.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
1.0 1.0 1.0 1.0 1.0 1.0
1.0 1.0 1.0 1.0 1.0 1.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
2.0 2.0
0.5 0.5
2.0 2.0
2.0 2.0
2.0 2.0
2.0
0.5 2.0
0.5
0.5 0.5
5.0 5.0
0.2 0.2
5.0
5.0
5.0
5.0
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
5.0
5.0
5.0
5.0
0.2 0.2
5.0 5.0
0.5 0.5
0.5
2.0 0.5 2.0
2.0 2.0
2.0 2.0
2.0 2.0
0.5 0.5
2.0 2.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
2.0 2.0
0.5 0.5
2.0 2.0
2.0 2.0
2.0 2.0
2.0
0.5 2.0 0.5
0.5 0.5
5.0 5.0
0.2 0.2
5.0
5.0
5.0
5.0
0.2
0.2
0.2
0.2
ZL
ZL
(a)
(c)
ZS
ZS
(a)
1.0
1.0
2.
0
2.
0.
0
5
0.
5
0.5
0.5
A
2.0
2.0
5.0
5.0
0.2
0.2
2.
0
2.
0
0.5
0.5
zS
0.2
0.5
1.0
2.0
5.0
5.0
2.0
1.0
0.5
0.2
0.5
0.5
2.
0
2.
0
zL 0.2
0.2
5.0
5.0
2.0
2.0
B
0.5
0.5
0.
5
0.
2.
5
0
2.
0
1.0
1.0
VS
VS ~ L=10 nH RL ~ C=0.6 RL
(b) (c)
Resulting Matching Networks
CT = C + CLP
(a) (b)
1 -3
Input reflection coefficient |⌫in|
Transfer function H , dB
Figure 2.??(b)
0.7 -4.5
0.6 -5 Circuit in
0.5 -5.5 Figure
in
it .8 (c)
0.4 2.??(c)
ircu re 8
0.3 C gu -6.5
0.2 Fi -7
0.1 -7.5
0 -8
0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3
Frequency t (GHz) Frequency t (GHz)
The equivalent band pass filter analysis allows us to explain the bell
shaped response of the matching network in the neighbor hood of F0
and provides us with a good estimation of the BW of the circuit. The
only drawback is its complexity.
In Figure 2.16(a) the impedance transformation is illustrated by
moving one node of the circuit to another. And each node can be
expressed in terms of the impedance ZS = Rs + jXS (or) admittances
1/p = Gp + jBp. Hence, at each node we can calculate the nodal quality
factor Qn as
|Xs |
QN = (2.181)
RS
|Bp |
QN = (2.182)
GP
|1.23|
QN =
1
QN = 1.23 (2.183)
(a)
RST=125.Ω
Vb
LN=
~ CT 16.2nH RLP=125.1Ω
1.55 pF
(b)
⫺2
⫺3 Equivalant
Transfer function H , dB
filter
⫺4
⫺5
Circuit
⫺6 in
Fig 2.16(c)
⫺7
⫺8
Qn
QL =
2
Z = r + jx
1 − r2 − j2 2i
= +j (2.184)
(1 − r )2 + i2 (1 − r )2 + r2
1.0
1.0
Qn =10
2.
0
Qn =3
2.
0.
5
0. 0
5
0.5
0.5
Qn =1
2.0
2.0
5.0
5.0
0.2
0.2
2.
0
2.
Qn =0.3
0
0.5
0.5
0.2
0.5
1.0
2.0
5.0
5.0
2.0
1.0
0.5
0.2
Qn =0.3
0.5
0.5
2.
0
2.
0
0.2
5.0 Qn =1 0.2
5.0
2.0
2.0
0.5
0.5
Qn =3
0.
5
0.
2.
0
2. 5
0
Qn =10
1.0
1.0
Figure 2.19
x
QN =
r
2|i |
= (2.185)
1 − r2 − i2
where the “plus” sign is taken from positive reactance and the “minus”
sign for the negative X .
ZL
C3 C1
Zin
ZOL ZOL lL
ZOS ZOS
ZL ZL
LS LS
Zin Zin
Zin=ZO ZOL Z4 Z3 Z2 ZC ZD l1
ZL ZL ZL
Open (or)
short circuit
(or) between the stub and load impedance. And this drawback can be
avoided by double stub matching networks.
In this double stub matching networks, two short (or) open circuit
stubs are connected in parallel with a fixed length transmission line
placed in between. The length l2 of this line is usually chosen to be one-
eight three-eight and five eights of wavelengths. The 3/8th and 5/8th
are mostly used in the high frequency applications.
The length of the line segment between two stubs is l2 = (3/8)λ. For
a perfect match it is required that Zin = ZO and YA = 1. Since the lines
are assumed to be lossless, the normalized admittance YB = YA − jbs2
is located in the constant circle J = 1.
For l2 = (3/8)λ line the g = 1 circle is rotated by α/3l2 = 3π/2
radians (or) 270◦ towards the load. The admittance ye needs to reside on
this rotated g = 1 circle called yc circle in order to tp ensure matching.
By varying the length of ls stub we can transform point Y0 such a
way that the resulting Yc is indeed located on the rotated g = 1 circle.
This procedure can be done for any load impedance except Yd as it is
located in g = 2 circle. This represents the forbidden region.
To overcome this problem in practical applications, commercial
double stub tunnel are usually have input and output transmission lines
whose lengths are related according to l1 = l3 ± λ4 . In this case if
particular load impedance cannot be matched, one simply connects the
load to the opposite end of the tuner which moves YD,out of forbidden
region.
• Class A
• Class B
• Class AB
• Class D
Ideal transfer
Linear function IC
region
Quiescent Quiescent
Point Point
VA YB YB
Cutoff Output
region wave form QB=180°
Input
wave form
(a) Class A (b) Class B
IC IC
t
oin
tP
tin
en
Po
c
ies
nt
Qu
sce
ie
Qu
YBE YBE
There are generally two types of biasing networks passive and active.
Passive networks are the simplest type of biasing circuits and usually
incorporate a resistive network, which provides the appropriate voltages
and currents for the RF transistor.
The main advantages of such networks are that they are very sen-
sitive to changes in transistor parameters and that they provide poor
temperature stability. To compensate for these drawbacks active biasing
networks are employed.
The combination of the blocking capacitor CB and RFc connected
to the base and collector terminals of the transistor in Figure 2.24 serve
the purpose to isolate the RF signal from DC power source. At high
VCC VCC
I1
R1 R2
IB
CB R4
CB
IC RFc RFc
R2 R2
RFout IB
RFc R3 RFout
Vx
RFc
Ix
R1 CB
CB
RFin
RFin
VCC
I1
RC2
CB
RC1
IC RFc
IB2
RB1 RB2
Q2
IB1 RFc
Q1 CB
RFin
point. If Q1 and Q2 have the same thermal properties then this biasing
network also results in good temperature stability.
Another active biasing network for a BJT in a common emitter
configuration is showing Figure 2.26. Here diodes D1 and D2 provide
a fixed reference for the voltage drop across the base-emitter junction
of both transistors. Resistors R1 is used to adjust the biasing current to
the base transistor Q1 and R2 limits the range of this adjustment. Ideally
for the temperature compensation, transistor Q1 and one of the diodes
should remain at the ambient temperature whereas the second diode
should be placed on the same heat sink as RF transistor Q2 .
Vcc
R2
CB
RFC
RFC
R1 Q1
D1 RF out
D2 RFC
Q2
CB
RFin
Figure 2.26 Active biasing network containing low frequency transistor and
two diodes.
VG VD
CB
CB
RFc RFc
RFout
RFin
The biasing networks for field effect transistors are in many ways similar
to the BJT networks covered in the previous section one key distinction
is that MESFET usually require a negative voltage as part of bias condi-
tions. The most basic passive bipolar biasing network for FETs shown
in Figure 2.28.
The main disadvantage of such a network is the need of a bipolar
power supply for VG < 0 and VD > 0. If such a bipolar power supply
is unavailable one can resort to a strategy where instead of the gate,
the source terminal of the transistor is biased. The gate in this case is
grounded. Ten examples of such networks are shown in Figure 8.38.
VG VD
CB
CB
RFc RFc
RFout
RFin
Input Output
RF Matching Matching PL
[S] Load
Source Network Network
(IMN) (OMN)
⌫out
⌫in
DC bias
where
1 |bs |2
(1 − in )2 =
2 |1 − S |2
5. Define transducer power gain.
The transducer power gain GT , which quantifies the gain of the
amplifier placed between source and load
1 − |S |2 2 1 − |L |2
GTU = × |S 21 | ×
|1 − S11 2 | |1 − L S22 |2
GTU = GS × G0 × GL
1 1
Gs max = and GL max =
1 − |S11 |2 1 − |S22 |2
21. What are the contributions from Gs and GL ?
The contributions from Gs and Gl can be normalized with respect
to their maximum values such that
Gs 1 − |S |2 |
gs = = (1 − |S11 |2 )
Gs max 1 − S11 S |2
GL 1 − |L |2 |
gL = = (1 − |S22 |2 )
GL max 1 − S22 L |2
22. Give the circle equation for constant gain?
The circle equations are
∗
gi S11
λgi =
1 − |S11 |2 (1 − gi )
radius rgi = 0.
• The constant gain circles all have their centers on a line connect-
∗ . The smaller the gain values, closer to the
ing the origin to S11
centre λgi moves to origin and the larger the radius rgi .
• For a special case type i = 0 the normalized gain becomes as
gi = 1 − |S11 |2 and both λgi and rgi have the same value.
24. What is the advantage of unilateral approximation?
The unilateral approximation neglects the reverse gain so that the
gain associated with the matched input port is not affected by the
output port.
∗
S = in
RN
F = Fmin + |YS − Yopt |2
GS
Impedance form:
GN
F = Fmin + |ZS − Zopt |2
RS
ZOS ZL
ZOS
ZL lS
Zin lS
Open
Open
(or)
(or)
Short circuit
Short circuit
lS2 lS1 ZL