774 Bibliography

Sen, P. C., Principles of Electrical Machines and Power Electronics, Wiley & Sons, 2nd Edition, 1997
Bibliography
Shepherd, W. and Zand, P., Energy Flow and Power Factor in Sinusoidal Circuits, Cambridge University
Press, 1979.
Streetman, B. G., Solid State Electronic Devices, Prentice-Hall International, 2nd Edition, 1980.
Sze, S. M., Physics of Semiconductor Devices, Wiley & Sons, 2nd Edition, 1981.
Takuechi, T. J., Theory of SCR Circuits and Application to Motor Control, Tokyo Electrical Engineering
College Press, 1968.
Thorborg, K., Power Electronics, Chatwell-Bratt, Lund, 1993.
Trzynadlowski, A. M., High Power Electronics, Wiley & Sons, 1998.
Van der Ziel, A., Solid State Physical Electronics, Prentice-Hall International, 3rd Edition, 1976.
Wolf, H. F., Semiconductors, John Wiley-Interscience, 1977.
Wood, P., Switching Power Converters, Van Nostrand Reinhold, 1981.

The following books are recommended for reading and reference purposes.

Baliga, B. J., Modern Power Devices, John Wiley & Sons, New York, 1987.
Bar-Lev, A., Semiconductors and Electronic Devices, Prentice-Hall International, 1979.
Batarseh, I., Power Electronic Circuits, 2004
Bedford, B. D. and Hoft, R. G., Principles of Inverter Circuits, John Wiley & Sons, New York, 1964.
Bird, B. M., et al., Introduction to Power Electronics, John Wiley & Sons, New York, 2nd Edition, 1993.
Blicher, A., Thyristor Physics, Springer, New York, 1976.
Chryssis, G., High Frequency Switching Power Supplies, McGraw-Hill, 2nd Edition, 1989.
Davis, R. M., Power Diode and Thyristor Circuits, Peter Peregrinus, London, 1971.
Dewan, S B. and Straughen, A., Power Semiconductor Circuits, John Wiley & Sons, New York, 1975.
Ericison, R. W., Fundamentals of Power Electronics, Kluwer, 1997.
Finney, D., The Power Thyristor and its Applications, McGraw-Hill, 1980.
Fishenden, M. and Saunders, 0. A., An Introduction to Heat Transfer, Oxford University Press, 1982.
Fraser, D. A., The Physics of Semiconductor Devices, Oxford University Press, 1977.
Gentry, F. E. et al., Semiconductor Controlled Rectifiers: Principles and Application of pnpn Devices,
Prentice-Hall, 1964.
Ghandhi, S. K., Semiconductor Power Devices, John Wiley-Interscience, New York, 1977.
Grafham, D. R. et al., SCR Manual, General Electric Company, 6th Edition, 1979.
Grove, A. S., Physics and Technology of Semiconductor Devices, John Wiley & Sons, New York, 1967.
Gyugyi, L. and Pelly, B. R., Static Power Frequency Changers, John Wiley & Sons, New York, 1976.
Harnden, J. D. and Golden, F. B., Power Semiconductor Applications, Vol. I and II, IEEE Press, 1972.
Hart, D.W., Introduction to Power Electronics, Prentice-Hall, Inc, 1997.
Hempel, H. P., Power Semiconductor Handbook, Semikron International, Nuremberg, 1980.
Hnatek, E. R., Design of Switch Mode Power Supplies, Van Nostrand Reinhold, 3rd Edition, 1989.
Hoffman, A. and Stocker, K. (Eds), Thyristor-Handbook, Siemens, Berlin, 1965.
Karady, G., ‘High-Power Electronic Devices’ in Advances in Electronics and Electron Physics, Vol. 41,
Academic Press, 1976.
Krein, P. T., Elements of Power electronics, OUPress, 1998
Kusko, A., Solid State D.C. Motor Drives, The MIT Press, 1968.
Lander, C. W., Power Electronics, McGraw-Hill, 1981.
Mazda, F. F., Thyristor Control, John Wiley and Sons, New York, 1973.
Mazda, F. F., Power Electronics Handbook: components, circuits and applications, 3rd Ed, Newnes, 1997.
McMurray, W., The Theory and Design of Cycloconverters, The MIT Press, 1972.
Mohan, N., Undeland, T. M., and Robbins, W. P., Power Electronics: Converters, applications and
design, John Wiley & Sons, New York, 2003.
Murphy, J. M. D., Thyristor Control of A. C. Motors, Pergamon, London, 1973.
Ohno, E., Introduction to Power Electronics, Oxford Science Publications, 1988.
Oxner, E. S., Power FET’s and their Applications, Prentice-Hall, 1982.
Pelly, B. R., Thyristor Phase-Controlled Converters & Cycloconverters, John Wiley & Sons, New York, 1971.
Phillips, A. B., Transistor Engineering, McGraw-Hill, 1962.
Ramshaw, R. S., Power Electronics, Chapman and Hall, 1973.
Rashid, M. H., Power Electronics: Circuits, Devices and Applications, Prentice-Hall International, 2003.
Sanders, C. W., Power Electronics, McGraw-Hill, 1981.
Schaefer, J., Rectifier Circuits, John Wiley & Sons, New York, 1965.
Seguier, G., Power Electronic Converters – AC-DC Conversion, North Oxford Academic Press, 1986
 Power Electronics 775 776 Bibliography

Physical Constants

Avogadro’s number N 6.022×1023 atom per mole /kg

Bohr radius ao 0.529177 Angstrom
52.9177 pm
Boltzmann’s constant k 1.38×10-23 Joule / degree Kelvin J/K
Electronic charge q 1.602×10-19 Coulomb C
Free electron rest mass mo 9.11×10-31 kilogram kg
Acceleration – gravity g 9.80665 m/s2
Permeability of free space µo 4π×10-7 Henry / metre
Permittivity of free space εo 8.854×10-12 Farad / metre 1/ µo c2
Planck’s constant h 6.626×10-34 Joule / second Js
Proton rest mass M 1.67×10-27 kilogram kg
Speed of light in vacuum c 2.998×108 metre per second m/s
Stefan-Boltzmann constant σ 5.671 W/(m2K4)
Thermal voltage @ 300K Vt 25.86 kT/q mV

Silicon Material parameters

Bandgap @ 300K Eg 1.12 eV

Breakdown field Ebr 3×107 V/m
Density ρ 2.33 g/cm3
Intrinsic concentration @ 300K ni 1.0×1010 cm-3
Electron affinity X 4.05 V
Mobility @ 300K µn 1400 electrons cm2/V-s
µp 450 holes
Relative dielectric constant εs/εo 11.9
Thermal conductivity @ 300K χ 1.5 W/cmK

Metal resistivity @ 20ºC temperature co-efficient

ρ µΩ m /K

Copper 0.01724 0.0039

Silver 0.0159 0.0041
Aluminium 0.0280 0.0043
Nichrome 1.080 0.0001
Tin 0.120 0.00046
Tantalum 0.1245 0.0038
Tungsten 0.0565 0.0045

Brass 0.062 – 0.078

Derived electromagnetic units

Energy joule J kg m2/s2

Charge coulomb C As
Voltage volt V J/C = kg m2/(A s3)
Magnetic flux weber Wb V s = kg m2/(A s2)
Magnetic flux density tesla T V s/m2 = kg/(A s2)
Magnetic field intensity amp-turn/metre A/m A/m
Resistance ohm Ω V/A = kg m2/(A2 s3)
Inductance henry H Vs/A = kg m2/(A2 s2)
Capacitance farad F C/V = A2s4/(kg m2)
Power watt W VA = J/s = kg m2/s3
 Power Electronics 777 778 Index

source 139 current

time 137 base 35
commutation circuits 332 continuous 276, 353, 372, 377, 490
commutation failure 307 discontinuous 276, 357, 365, 375, 490
commutation in current-fed gate 93
inverters 450, 451 holding 94

INDEX commutation interval 137

components
latching 94
peak let-through 2440
capacitor 572 prospective fault 244
fuse 242 current amplification factor 35
inductors 617 current de-focussing 62
ac converter buffer, n-type 62 power resistors 680 current focussing 61
constant frequency built-in potential 19 transformer 612 current ratings 71, 92
direct bus-bar, laminated 675 conducted noise 258 current sharing 236
phase controlled conduction current source inverter 450
un-modulated inverter capacitance 573 heat 100 single phase 450
sequence control input 40, 84, 153 simultaneous 425 three phase 451
PWM converter junction 19 conduction loss 110 current tailing 91, 96
ac regulators 321 output 84 conductivity, electrical 1, 17 current transfer ratio 35
integral-cycle 333 reverse transfer 84 conductivity, thermal 7 current transformer 659
integral-half-cycle 337 scl 18 contact potential 4, 30 cycloconverter 338
open-delta 332 capacitors 572 constant current 39 negative group 338
open-star 328 construction 581, 593 constant current inverter 450 positive group 338
single-phase 321 ceramic 609 constant resistance 39 single phase 339
tap-changing 337 dissipation factor 575 controlled converter 264 three phase 340
three-phase 328 dv/dt 603 convection
thyristor-diode 331 electrolytic 581, 593 forced 100, 105 damping factor 170, 175, 204
ac regulators with diodes 331 equivalent circuit 744 natural 100 Darlington transistor pair 32
ac-dc converters 264 feed-through 608 converter 489 dc blocking capacitor 548
acceptor 2 leakage 584 balanced 547 dc chopper 348
air flow lifetime 577, 589 boost 504, 514 dc converter
laminar 100 metallised 589 buck 490 analysis discontinuous 565
turbulent 100 mica 613 buck-boost 516 asymmetrical 397
air-gap ripple current 586 flyback 504, 516 back emf 353
energy 635 self-healing 580 forward 490 bipolar 393
in inductors 635 snubber 165, 211 isolated 538 boost 504
ambient 101 stray 614 overlap 504 comparison 533, 535
Ampere’s Law voltage rating 583 push-pull 547 control 495, 509, 519
amplifying gate 56 X class 260, 606 resonant dc-dc 550, 557 critical inductance 536
annealing 6 Y class 260, 608 reversible 526 Cuk 533
anode 51, 92 ringing choke 503 design 522
arc voltage 245, 247 carrier injection efficiency 34 step up 504 flyback 504, 516
asymmetrical thyristor 57 carrier multiplication 12 converters forward 490
avalanche breakdown 7, 11, 36, 70 catch winding 211 bidirectional 264 four quadrant 351, 400
avalanche multiplication 11, 28, 36, 70 cathode 51 controlled 264 full bridge 400, 549
cathode shorts 55, 57 fully controlled 264 half bridge 549
Back-emf 288 centre-tapped transformer 272 half-controlled 264 isolation538
back-to-back connected converters 481 ceramic capacitors 609 matrix 341 multi level 392, 395
barrier potential 9, 30 channel resistance 42, 83 overlap 306 multiphase
base current 35, 81 characteristic of reversible 481, 526 push-pull 547
base terminal 35 diodes 25, 71 single-phase bridge 271 quasi-resonant
base transport factor 34 fuses 242 summary 312 one-quadrant (first) 349, 351
bevelling 27,52 thyristors 52, 92 three phase 292, 296 resonant 550
bi-directional thyristor 60 transistors 32, 75 uncontrolled 264 reversible 526
bipolar diode 2 charge 153 unidirectional 264 step-down 490
bipolar transistor 33, 82 chopper 348 cooling step-down/up 516
blocking voltage 54, 92, 139, 214 cmos characteristics 148 air 102 step-up 504, 514
body diode 44 coercive force 627 convection 100 two quadrant 349, 371
boost converter 504, 514 collector current 35, 123 forced air 103, 105 zero switching 138
braking 481 collector terminal 34 heat pipe 104 dc link 432
breakdown collector-emitter voltage 36 liquid 103 dc mean value
avalanche 7, 11 common mode noise 258 cooling by convection 102 dc switching regulators 489
first 36,76 commutation cooling of semiconductor devices 102 dc to ac inverters 413, 450
punch through 11 inductance 306 core, magnetic dc to dc switch mode converters 489
second 36 interval 137 ferrite 621 dead banding 442
break-over voltage 55, 92 forced 95 iron 618 delay, angle of 274, 304, 321
bridge converters 264 group 338 core losses 627 delay angle 274, 277, 282, 296
bridge inverters 413, 424, 450, 455 line 264, 321 eddy 631 delay time 72, 80, 95, 321
bridge rectifiers 265, 271, 292, 296 load 957 hysteresis 631 demagnetising
bridge with freewheeling diode 268, 274, natural 95, 264 coupling, magnetic 212 core 540
283, 300, 303 overlap 306 critical inductance 536 winding 540, 545
buck converter 490 resonant link 95 crowbar 257 density
buck-boost converter 516 self 485
779 Power Electronics 780 Index

acceptor 2 emissivity 103 radiation 99

donor 2 emitter terminal 34 holding current 94 jfet, SiC 50
free electron 1 energy, air-gap 635 holes 1 junction
depletion energy, trapped 325, 333, 354 hot spot 37 capacitance 18
layer 9, 18 energy recovery 211 hysteresis loss 631 pn 2
width 20 enhancement mode 37 potential 9
depletion mode 37 epi-diode 26 i-region 27 virtual 101
derating, percentage 227, 413 epitaxial 4, 6, 26 ideal switch 1 junction breakdown 11
design equal area criterion 266 igbt 46, 90, 145 junction temperature 101, 107
base drive 153 equivalent series latch up 48
current transformer 659 inductance ESL 498, 511 on-state 47 laminations, iron 631
gate drive 155, 156, 158 resistance ESR 497 turn-of 48 latching current 94
heat sink 110 extinction angle 2775 turn-on 47 latch-up 48
inductor 637, 668 extrinsic 1 impact ionisation 12 lateral sheet resistance 61
saturable inductor 196, 645 impedance L-C circuit 432, 455
smps 215, 227, 489 Faraday’s Voltage Law 619 thermal 106, 117 leakage
snubber LRD 188, 192 ferrite magnetic material 617, 619 transient thermal 106, 117 current 11, 30, 92
snubber RC 166 fibre optics 147, 163 implantation 4, 6 inductance
snubber RCD 178, 185, 205 filter 251 induction heating 455 Lenz’s law 631
soft clamp 172 input 261 inductive current switching 129 level shift circuit 147, 157
unified 200 output 487 inductor 617 lifetime 2, 5, 27, 53, 59, 577, 589
voltage transformer 650 firing angle 274 air core 188 light dimmer 160
di/dt, initial 51, 92, 172, 188, 233 flyback converter 504 design 637 light triggered thyristor 64
dielectric constant 5, 8 forced commutation 95 energy storage 131, 189, 635 line commutation 321
differential mode noise 261 forced convection 105 ferrite core 196, 617, 619 Litz wire 632
diffusion 3 forward biased 10 ideal load current 122
diode 9 forward recovery 60 iron core 618 capacitive 122
bridge 271, 413 forward converter 490 iron powder 618 continuous 276, 353, 372, 377
epitaxial 26 four quadrant operation 400 linear 620 discontinuous 276, 357, 365, 375
fast recovery 25, 71 free electrons 1 saturable 196, 647 inductive 129
form factor 314 freewheel diodes 132, 268 smoothing resistive 123
hot electron 31 frequency conversion 338 steel 618, 631 load commutated converter
model 14, 15, 18 full bridge 271 injection efficiency 34 parallel 465
one sided 21 full wave 271, 286 input filter 261 series 460
parasitic 44 fuses instability, thermal 78 loop gain 54
p-i-n 27 current limiting 242 insulated gate bipolar transistor 46, 90 loss
2
Schottky 29 I t of 243, 245 integral-half-cycle control 337 Eddy current 631
SiC 13, 32 protection by 246 interdigitation 61 hysteresis 631
diodes ratings and characteristics of 242 intergroup reactor 333 off-state 110
avalanche of 11 fuses in dc circuits 248 intrinsic carrier concentration 1 on-state 108
characteristics of 25, 71 inversion 291, 310 snubber 167, 171, 175, 182, 189, 196, 200, 211
construction of 25 Galvanic isolation 151 inverter switching transient 109
forward loss in 113 gate, amplifying 56 multilevel 472
parallel operation of 236 gate characteristics 93 regeneration 481 magnetic materials 617
series operation of 227 gate commutated thyristor (GCT) 62, 98 single-phase 413 core losses 627, 631
single phase rectifier 271 gate drive 145, 151 static 412 ferrites 619, 621
switching behaviour of 72 boot strap 153, 163 three-phase bridge 424 magnetising current 240, 544
three-phase rectifier 295 charge coupled 153, 163 180° conduction 429 permeability 622
discrimination 242 negative 152 120° conduction 425 shielding 260
displacement factor 312, 344 transformer 147, 163 inverter with inductive load 413 steels 618
distortion factor 344, 412, 421 gate pilot 57 inverters temperature effects 633
dmos 38 gate pulse 156 bridge 413, 424 majority carriers 2, 46
donor 2 gate ratings 93 control of 431 matrix converter 341
dopant 1 gate terminal 52 current-fed 412 Maxwell’s Equations
drain 37, 83 gate turn-off (GTO) thyristor 61, 96, 161 load commutated 455 mcb 249
drive circuits 146, 157 gate drive design 161 multilevel 472 mean value
high side 151 generation-recombination 1 pulse-width modulation 435 metal oxide variator (MOV) 252
isolated 147 graphical analysis 109 resonant 455 metallisation 4, 6
low side 151 guard ring 27 standby 485 mica capacitors 613
dv/dt 55 voltage-fed 412, 424 Miller effect 86, 153
applied 55, 95 half-bridge converter 278 inverting mode 291, 310 minimum, GTO
reapplied 95 half-bridge inverter 459, 549 ion implantation 4, 6 off-time 97
snubber 168 half-controlled 265, 281 iron on-time 97
dynamic latch-up, IGBT 50 half cycle control 337 laminations 631 minority carriers 2, 46
half-wave 268 power core 641 modulation 359
Eddy current losses 631 harmonics 303 irradiation asynchronous 437
efficiency harmonic factor 412, 421 electron 5 dead banding 442
efficiency, load 343, 345 H-bridge 413 neutron 2 multi-level 478
electric field stopper 57 heat sink 102, 104 proton 5 multi-pulse 431, 434
electric shielding 259 heat transfer 99 i-region 27 pulse-width 431, 435
electrolytic capacitors 581, 589 conduction 100 isolated drive techniques 163 selected notching 431, 434
2
electrons 1 convection 100 I t of fuses, pre-arcing 243, 258 single-pulse 431, 432
781 Power Electronics 782 Index

space vector 431, 445 power factor 316, 327, 344 with rectifiers 331 silicon dioxide 35
spectra 441 power factor displacement 316 regulators (switching) 489 silicon carbide 6
synchronous 435 power transistor 33, 75 step-down 490 jfet 50
triplen injection 443 protection step-up 504 silicon-controlled rectifier 51, 92
mosfet 37, 83, 117, 145 overcurrent 242 reliability simultaneous conduction 425
MOV, see metal oxide varistor overvoltage 172, 251 failure rate 577 single-phase bridge 272
mtbf 579 protection by fuses 242, 250 fit 578 six-step inverter 424
multilevel inverters 472 p-type 2 lifetime 577 skin effect 631
cascaded bridges 477 pulse number 264, 292, 298, 315 mtbf 579 smps
diode clamped 472 pulse-width control 432 remanence 627 bridge 549
flying capacitor 475 pulse-width modulation 433 resistance 686 comparison 533, 535
pwm 478 punch-through 11, 22 on-state 42 Cuk 533
svm 478 push-pull inverter 547 thermal 78 forward (buck) 490
multiplication breakdown 11 pwm 435 resistor 680 isolation 538
asymmetrical 437, 441 construction 681 push-pull 547
natural convection 100 asynchronous 437 current sensing 702 reversible 526
natural sampling 435 multilevel 478 fusible 700 step up (boost) 504, 514
n-channel 37 natural sampling 435 heat sinking 692 step up/down (buck-boost) 516
neutral point converter, NPC 474 regular sampling 437 properties 685 snap-off 75
neutron transmutation doping 2 space vector 431, 445 power 689 snubber
noise 258, 261 spectra 441 pulse rating 693, 695 bridge leg 201, 224
conducted 258 symmetrical 435, 440 stability 697 energy recovery 212
common mode 261 synchronous 435 temperature sensing 701 turn-off 215
differential mode 261 types 681, 699 turn-on 211
electric field 259 Q-factor 457 resonant frequency 456 R-C design 166,178, 204
magnetic field 259 quadrant, operation resonant dc-dc converter soft clamp 172
radiated 259 four 440 series 550 unified 200
non-linear switching transition 127 single 351, 371 parallel 553 snubber circuit
notching 307 two 380, 389 resonant switch 557 turn-off 172, 177, 205
n-type 4 quasi-resonant converter resonant converter 455 turn-on 174, 188, 196
quasi-square wave 416 current source, parallel- 455, 458, soft ferrite data 667
ohmic contacts 4 465 soft voltage clamp 129, 172
ohmic region 39 radio frequency interference 261 resonant 455 source terminal 37
oil cooling 103 conducted 258 resonant switch 138 space charge layer, scl 9, 18
on-resistance 40, 42, 44 radiated 259 series resonance 455, 460 space voltage vector 425
opto-coupler 146, 163 ratings zero current 455 minimum ripple current 447
oscillation circuit 456, 550 current 71 zero voltage 455 minimum loss 447
output voltage ripple 496 maximum 68 reverse biased 11 square-wave 413
overcurrent protection 242 power 71 reverse blocking 10 standby power supply 485
overlap 306 temperature 71 reverse recovery 73, 115 single-phase 485
over-modulation 448 voltage 69, 76 reverse recovery time 73, 115 three-phase 484
overvoltage protection 251 ratings of fuses 242 reverse-conducting thyristor 57 state
oxide capacitor 5 R-C circuit 129, 166 reversible converters 481 cut-off 36
R-C snubber, see R-C circuit rfi 258 inverter 412
parallel connection of devices 236 recombination lifetime 2 ride-through 342 off 36
parallel load resonant converter 465 recovery ripple current 586 on- 36
parallel resonant circuits 458 active 214, 222 ripple factor 294 static igbt latch-up 48
parasitic charge 73 RMS value 15 step-down converter 490
bjt in mosfet 33, 44, 82 forward 72 R-L circuit step junction 9
bjt in igbt 33, 82 hard 75 step response 204
diode in mosfet 33, 44 passive 212, 215 safe operating area 78, 84, 125, 135 step-up converter 504
p-channel 42 reverse 73, 115 saturable inductor 196, 645 storage charge 74
permeability 622 soft 75 saturable reactors 196, 645 storage energy 573, 635
amplitude 6226 unified active 224 saturation flux density, 667 stray capacitance 614
complex 626 unified passive 222 saturation, transistor 36 stray inductance 670
effective 625 rectification 265 saturation voltage 36 superposition 109
incremental 623 rectification efficiency 314 Schottky diode 4, 29, 75 super junction 45
initial 622 rectifier 9 scr 57 surge suppressors 252, 254
phase angle control 274, 321 single-phase bridge 271 selected harmonic reduction 434 sustaining current 76
piecewise-linear 14 three-phase bridge 294 self commutating converters 450, 455 sustaining voltage 76
pilot scr 57 rectifier ripple 273 semiconductor switch
pin diode 28 rectifying mode 264, 307 intrinsic 1 bidirectional 139
pinch-off 40 regular sampling 437 n-type 2 unidirectional 139
plastic capacitors 589, 592 regenerative braking 481 p-type 2 switched-mode power supply 225
pn junction 2, 10, 25 regulators (ac) 321 series connection of devices 227 switching classification
polysilicon 5 integral cycle 333 sharing hard 138
potential barrier 30 integral half-cycle 337 parallel 236 soft 138
power 99 open-delta 332 series 227 resonant 138
apparent 344 open-star 328 shorted natural commutation 139
reactive 344 single-phase 321 anode 62, 97 zero current 138
real 344 tap changing 337 cathode 55, 82 zero voltage 138
power dissipation 98, 108 thyristor-diode 331 silicon 1 switching frequency 109
783 Power Electronics

switching loss 109 current 659

switching regulators 490 design 650
switching time 86, 137 pulse 147, 157
switching transition volt-second imbalance 265
co-sinusoidal 127 zig-zag 296
linear 123, 136 transformer magnetising
switching-aid circuits 176,211 inductance 294, 646, 660
transparent emitter 62
tap-changer, thyristor 337 transient, thermal impedance 106
tail current 91, 96 transient sharing
GTO anode 96 parallel 236
igbt 91 series 227
temperature transient suppression 29
ambient 101 transistor
case 80, 101 bipolar 32, 75
junction 80, 101 Darlington 32
temperature ratings 71 igbt 33, 116
temperature rise 99 mosfet 33
thermal conductance 103 planar epitaxial 33
thermal conductivity 7, 99, 103 triple-diffused 33
thermal derating 13, 80 unipolar 33
thermal cycling 106 transistor in common emitter mode 33
thermal design 109 trench gate 45
thermal impedance, transient 106, 107 triac 64
thermal inertia 108 trickle charge 487
thermal instability 35 triggering of thyristors 156, 162
thermal resistance 71, 100 ttl characteristics 150
conduction 100 turn-off delay 81, 88
convection 100 turn-off gain 61, 96
radiation 99 turn-off loss 126, 136
thermal runaway 69,92 turn-off snubber 178
third harmonic injection 443 turn-off time 81, 88, 96
three phase inverter 424 turn-on delay 80, 86, 95
threshold voltage 37 turn-on loss 125, 135, 193
thyristor turn-on snubber 172, 188, 196
amplifying gate 56 turn-on time 80, 95, 124
asymmetrical 57
bi-directional 60 uncontrolled converters 264
gate commutated 62 uninterruptible supply UPS 485
gate drive 156 single-phase 485
gate turn-off 61, 96 three-phase 486
light triggered 64
pilot 57 variable dc link 432
reverse-conducting 57 varistor 252
scr 51 vertical superjunction 45
shorted cathode 57 virtual junction 68
snubber 168, 171 v-layer 27
triac 64 voltage breakdown 36
thyristor inverter 331 voltage source inverter VSI 4112
thyristor-diode regulators 331 voltage threshold 37, 41
thyristors voltage transformer 650
avalanche of 56 volt-second 266
characteristics of 51, 92
di/dt in 51, 64, 93 winding, inductors 668
dv/dt in 55 wire, copper 670
firing of 156, 158 wire, Litz 632
parallel connection of 236
ratings of 51, 92 Zener breakdown 13, 28
series connection of 227 Zener diode 28, 129, 157, 251
time Zener diode clamp 130, 251
arcing 243 Zener effect 13, 29
fuse clearing 244 zero bias junction capacitance 18
melting 243 zero bias potential 9, 18, 20
total harmonic distortion THD 412, zero current switching 138, 558
transconductance 41 zero volts loop 415
transfer ratio 35 zero voltage switching 138, 560
transformer 650 zig-zag connection 294
ampere-turns balance
421