1N4001 thru 1N4007

Vishay General Semiconductor

General Purpose Plastic Rectifier

FEATURES
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Solder dip 260 °C, 40 s
DO-204AL (DO-41) • Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

TYPICAL APPLICATIONS
For use in general purpose rectification of power
PRIMARY CHARACTERISTICS supplies, inverters, converters and freewheeling
IF(AV) 1.0 A diodes application.
VRRM 50 V to 1000 V (Note: These devices are not Q101 qualified.)
IFSM (8.3 ms sine-wave) 30 A
MECHANICAL DATA
IFSM (square wave tp = 1 ms) 45 A
Case: DO-204AL, molded epoxy body
VF 1.1 V
Epoxy meets UL 94V-0 flammability rating
IR 5.0 µA
TJ max. 150 °C
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: Color band denotes cathode end

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 UNIT
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V
Maximum average forward rectified current
IF(AV) 1.0 A
0.375" (9.5 mm) lead length at TA = 75 °C
Peak forward surge current 8.3 ms single half
IFSM 30 A
sine-wave superimposed on rated load
Non-repetitive peak forward tp = 1 ms 45
surge current square waveform tp = 2 ms IFSM 35 A
TA = 25 °C (Fig. 3) tp = 5 ms 30
Maximum full load reverse current, full cycle
IR(AV) 30 µA
average 0.375" (9.5 mm) lead length TL = 75 °C
Rating for fusing (t < 8.3 ms) (1) I2 t 3.7 A2 s
Operating junction and storage temperature TJ, TSTG - 50 to + 150 °C
Note:
(1) For device using on bridge rectifier application

Document Number: 88503 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 26-Mar-08 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com 1
1N4001 thru 1N4007
Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 UNIT
Maximum instantaneous
1.0 A VF 1.1 V
forward voltage
Maximum DC reverse current TA = 25 °C 5.0
IR µA
at rated DC blocking voltage TA = 125 °C 50
Typical junction capacitance 4.0 V, 1 MHz CJ 15 pF

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 UNIT
RθJA 50
Typical thermal resistance (1) °C/W
RθJL 25

Note:
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
1N4004-E3/54 0.33 54 5500 13" diameter paper tape and reel
1N4004-E3/73 0.33 73 3000 Ammo pack packaging

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

1.0 30
Average Forward Rectified Current (A)

60 Hz Resistive or TA = 75 °C
Peak Forward Surge Current (A)

Inductive Load 8.3 ms Single Half Sine-Wave

0.8 25
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pads
0.6 20

0.4 15

0.2 10
0.375" (9.5 mm)
Lead Length
0 5
0 25 50 75 100 125 150 175 1 10 100
Junction Temperature (°C) Number of Cycles at 60 Hz

Figure 1. Forward Current Derating Curve Figure 2. Maximum Non-repetitive Peak Forward Surge Current

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88503
2 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Revision: 26-Mar-08
 1N4001 thru 1N4007
Vishay General Semiconductor

50 100
TJ = 25 °C
tp = 1 ms f = 1.0 MHz
Peak Forward Surge Current (A)

45
Vsig = 50 mVp-p

Junction Capacitance (pF)

40

35 tp = 2 ms

30 10

25 tp = 5 ms
tp
20

15
square waveform
10 1
25 50 75 100 125 0.1 1 10 100
Ambient Temperature (°C) Reverse Voltage (V)

Figure 3. Typical Instantaneous Forward Characteristics Figure 6. Typical Junction Capacitance

100 100

Transient Thermal Impedance (°C/W)

TJ = 25 °C
Instantaneous Forward Current (A)

Pulse Width = 300 µs

1 % Duty Cycle
10
10

1
0.1

0.01 0.1
0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.01 0.1 1 10 100
Instantaneous Forward Voltage (V) t - Pulse Duration (s)

Figure 4. Typical Instantaneous Forward Characteristics Figure 7. Typical Transient Thermal Impedance

1000
Instantaneous Reverse Current (µA)

TJ = 150 °C
100

10 TJ = 100 °C

TJ = 25 °C
0.1

0.01
0 20 40 60 80 100
Percentage of Peak Reverse Voltage (%)

Figure 5. Typical Reverse Characteristics

Document Number: 88503 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 26-Mar-08 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com 3
1N4001 thru 1N4007
Vishay General Semiconductor

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

DO-204AL (DO-41)

1.0 (25.4)
MIN.

0.107 (2.7)
0.080 (2.0)
DIA.

0.205 (5.2)
0.160 (4.1)

1.0 (25.4)
MIN.

0.034 (0.86)
0.028 (0.71)
DIA.
0.026 (0.66)
Note: Lead diameter is for suffix “E” part numbers
0.023 (0.58)

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88503
4 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Revision: 26-Mar-08
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Revision: 18-Jul-08 1