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Transmission Electron
Microscopy
Dr Aïcha Hessler-Wyser
Bat. MXC 134, Station 12, EPFL+41.21.693.48.30.
Outline
Canon
Illumination
Echantillon
Projection
a. TEM principle
Lenses, general principle of optical geometry
First approximation: thin lens…
plan focal
plan focal
image
objet
Fi F
o
Fi’
Fo
’
fi fo
In particular, an image of the source placed at the object focal point F0 of the
condensor 2 will give a parallel illumination onto the sample
visible light
Auger electrons
Bremsstrahlung
elastically scattered
X-rays
electrons
inelastically
scattered electrons
How about
diffraction
Incident beam
Backscattered electrons secondary electrons
BSE SE Characteristic
X-rays
visible light
Auger electrons
???
“absorbed” electrons
Specimen
electron-hole pairs
direct beam
Bremsstrahlung
elastically scattered
X-rays
electrons
inelastically
scattered electrons
– We can calculate for scattering into all angles which are greater
than : 2 2
d The values of can vary form 0 to
= d = 2 d sind , depending on the specific type
of scattering.
with QT the total cross section for scattering from the specimen in
units of cm-1, N0 the Avogadro's number (atoms/mole), A the
atomic weight (g/mole) and the atomic density.
When it is scattered by a
scattering centre, a spherical
scattered wave is created, which
has amplitude sc but the same
phase:
e 2 ik r
sc ( r ) = 0 f ( )
r
d
– f() is a measure of the amplitude of an electron wave scattered
from an isolated atom.
– f()2 is proportional to the scattered intensity.
m 0c 2
f ( ) =
(Z f X )
8 2 a0 sin
2
fn : fé fX = 1 : 104 : 10
Tiré de L.H. Schwartz and J.B. Cohen, Diffraction from Materials
and K = g: K = h a * + k b* + l c *
The structure factor is given by the sum of all scattering centres (the
atoms) of the crystal that can scatter the incident wave:
sé
d iffu -
wave (transmitted, scattered or backscattered)
o
rétr
If wavelets are coherent (phase relation well defined),
resulting wave is the sum of the wavelets (interference)
and the observed intensity Ic is the squared resulting
objet wave modulus (usually called "diffraction").
2
diffu
i r r
i i
sé
sample:
nel
random atoms? Fres
lattice?
spherical
wavelets
ity
intens
f
me<<matom<<msample only i
n !!!
The energy transfer (loss) from the electron to the sample is
usually negligible.
If electrons go through a thick sample:
Multiple interaction occur: dynamical effects
Diffraction patterns complex to interpret
W crystals
a radiation
a sample
(crystal?)
Elastic diffraction
k
|k| = |k’| k’
g = k-k’
Periodic arrangement of atoms in the real space:
g : vector in the reciprocal space
c. TEM contrasts
Imaging mode
Echantillon
Lentille objectif
Plan focal
Plan image
Echantillon
Lentille objectif
Plan focal
Plan image
c. TEM contrasts
Diffraction mode
Direct correlation
between the back focal
plane (first diffraction
pattern formed in the
microscope) of the
objective lens and the
screen
Imaging mode
Direct correlation
between the image plane
(first image formed in the
microscope) of the
objective lens and the
screen
c. TEM contrasts
Diffraction patterns for fcc
SA ap.
Phase contrast
c. TEM contrasts
Bright field (BF), dark field (DF)
Bright fied (BF) : the
image is formed with
the transmitted beam
only 0
Dark field (DF): the
image is formed with
one selected
diffracted beam hkl
It gives information on
regions from the
sample that diffract in
that particular
direction.
Note the particular
case ot the DF mode:
the incident beam is
tilted.
P.-A. Buffat
c. TEM contrasts
Bright field (BF), dark field (DF)
Nickel based
superalloys
Contrast /’
Can vertical
1.1
A B
I/1 I/2
0.5
0 50 100 150 200 250 300 350
distance/nm
c. TEM contrasts
Polysilicon on Si wafer
Bright field (BF), dark field (DF)
Bright filed image. HRTEM image
The arrows point on stressed parts of the A disorganized layer is present
interface and induced strain in the substrate. between the substrate (left) and
The film has a columnar structure the polysilicon right. The polysilicon
is polycristalline and contains
stacking faults or twins
c. TEM contrasts
Exctinction distance
TEM: contrastes
Thickness fringes and chemical contrast
P.-A. Buffat
TEM: contrastes
Bended samples
c. TEM contrasts
Source project. pot. phase of exit wave
specimen atom pos.
FEG
Illumination
coherent
projected
potential
specimen
image
image of “projected
potential” defocus
Intensive SEM/TEM training: TEM January 2009 42 Aïcha Hessler-Wyser
c. TEM contrasts High Angle Annular Dark Field =HAADF
incoherent imaging:
no interference effects
dedicated STEM:
beam size ~0.1-0.2nm
Limitation: beam
formation by magnetic
lens: Cs !!!
d. Structure analysis
Zone axis
Each diffraction spot corresponds to a well defined familly of atomic
planes.
On a diffraction pattern, the distances between the diffracted spots
depend on the lattice parameter, but their ratio is constant for each
Bravais lattice.
Quick structure identification, manual or computer assisted.
d. Structure analysis
Camera length
Diffraction spots are supposed to
converge at infinity.
2hkl
The magnification of the diffraction
pattern is represented by the camera
length CL. CL
tg(2hkl) = R/CL
d. Structure analysis
Phase identification
[831]
Hexagonal -(AlFeSi)
40-3
0-20
d. Structure analysis
Powder diagram
Polycrystaline TiCl