Observations:

1. Semiconductor material = Germanium

2. Spacing between the probes, s = 0.24 cm

3. Thickens of the sample, W = 0.05 cm

Therefore, as per the table T1 provided in the manual f(W/s) = 6.931 Hence, the corresponding
resistivity can be calculated as,
𝜌0
𝜌=
𝑓(𝑊/𝑠)
𝑉
Where 𝜌0 = × 2𝜋 𝑠 note that V here is the measured voltage value
𝐼

Table:

(a) Constant current passed through the sample = __________ mA

Sr.No Temperature Voltage 103/T Resisitivity Log10

(K) (mV) (K-1)  ( cm) (calculated)
(calculated) (calculated)
25 (or whatever is the room temp)
30
40
50
60
70
80
90
100
110
120
130
140

Calculations
Temperature dependence of Resistivity:
𝐸𝑔
The resistivity of an intrinsic semiconductor is given as, 𝜌 = 𝐴𝑒 2𝑘𝑇 where A is some constant.
Taking logarithm, we get,

𝐸𝑔
𝑙𝑜𝑔𝑒 𝜌 = 𝑙𝑜𝑔𝑒 𝐴 +
2𝑘𝑇

Or

1 𝐸𝑔
𝑙𝑜𝑔10 𝜌 = 𝐶 +
2.3026 2𝑘𝑇

where C is the constant.

For convenience the above equation is re-written as

1 𝐸𝑔 103
𝑙𝑜𝑔10 𝜌 = 𝐶 + ∗
2.3026 ∗ 103 2𝑘 𝑇
103
Thus the graph between log of resisitivity, 𝑙𝑜𝑔10 𝜌 , and reciprocal of the temperature, 𝑇
, should be a
straight line in some range of temperature.

Band Gap:

103
The slope of the straight line between 𝑙𝑜𝑔10 𝜌 and is,
𝑇

𝐿𝑀 1 𝐸𝑔
𝑠𝑙𝑜𝑝𝑒 = = 3
∗
𝑀𝑁 2.3026 ∗ 10 2𝑘

Therefore,

𝐸𝑔 = 2.3026 × 103 × 2𝑘 × (𝑠𝑙𝑜𝑝𝑒)

Use the k = 8.617 x 10-5 eV K-1 to obtain Eg in eV

Results:
The energy band gap for the given Germanium crystal = ______________ eV