THE HONG KONG

POLYTECHNIC UNIVERSITY_________________________________________________ ___

Department of Electrical Engineering

ANSWERS OF TEST 2 OF ADVANCED POWER ELECTRONICS (2015/16)

Q1 Input voltage of a buck converter is 5V. The output power is 100W. Switching frequency is
300kHz. Output voltage is 2V. Comparing with IGBT and MOSFET, which one is the most
suitable for the buck converter as its active switching device? Briefly state ONE poins to support
your answer. (Only the first point will be taken into account if more than one points are provided.)
(30 marks)

ANS: MOSFET is more suitable. 20 marks

On-state resistance (Rds) of a MOSFET can be very low but on-state voltage of IGBT cannot be
very small. Power loss of MOSFET can be lower than IGBT. MOSFET is more suitable for low
voltage high current applications.

OR

Switching frequency of the converter is 300kHz which is too high for IGBT but MOSFET can
handle this high frequency. 10 marks

Q2 Specifications of a boost converter operating in discontinuous mode are that the input voltage is
100V, voltage conversion ratio is 2, output power is 200W, switching frequency is 100kHz. If the
forward voltage drop of the diode of the boost converter is 2V, calculate the conduction loss on
the diode. Recovery of the diode is neglected. (20 marks)

ANS: Vo  2Vin  2(100)  200V

The output power is 200W and the output voltage is 2x100V=200V. Hence, the average output
current is:
P 200
Io  o   1A 10 marks
Vo 200
The conduction loss of the diode is:
PD  VF I o  (2)(1)  2W 10 marks

EE4211 Advanced Power Electronics Page 1

 THE HONG KONG
POLYTECHNIC UNIVERSITY_________________________________________________ ___
Department of Electrical Engineering

Q3 (a) Sketch a circuit diagram of a forward converter with a single transistor. (10 marks)

ANS:
10 marks
vD2 vL
N1 : N3 : N2
D2 L
vD1 C

+
v1 v3 v2 D1 R Vo
iC
+ Tx i2 iD1 iL
Vin -
T vT D3 vD3
i1 i3

(b) Roughly sketch the idealised waveforms the gate signals and the current of each winding of
the transformer. (15 marks)

ANS: 15 marks

vgs
0 t
ip
ΔIM
N2Io / N1
0 t
is
Io
t
0
iD3
N1ΔIM / N3
0 t

EE4211 Advanced Power Electronics Page 2

 THE HONG KONG
POLYTECHNIC UNIVERSITY_________________________________________________ ___
Department of Electrical Engineering

(c) The converter is operating in continuous mode. Let the number of turns of the transformer
of the windings for the input side, the windings for the output side and the windings for
demagnetization as N1, N2, N3, respectively, the specifications of the converter are that the
input voltage is 100V, the output voltage is 20V, the switching frequency is 60kHz and the
output power is 200W. Also, the number of turns of N1 is 100 turns and N2 is 50 turns. All
components and conductors are assumed as ideal with no power losses, the inductance and
the output filtering capacitance are very high so that the inductor current and the voltage of
the output has no ripple. Calculate the maximum number of turns of N3. (25 marks)

ANS: Voltage conversion ratio of a forward converter is:

Vo 20
  0.2 5 marks
Vin 100
N2 50
D D  0.20
N1 100
The duty ratio of the gate signal is:
D  0 .4 5 marks
For complete demagnetizing of the transformer,
N1
D 5 marks
N 3  N1

N3 
1  D N1
D
(1  0.4)(100)
N3 
0.4
N3  150 5 marks
Hence the maximum number of turns of the demagnetizing winding is:
N 3(max)  150 5 marks

N1
Proving D  for your reference:
N 3  N1
Let the change of magnetizing current of the transformer is ΔIM, on the primary side when T is on,
di p I V DT
Lp  L p M  Vin , hence I M  in
dt DT Lp
When T is off, on the demagnetizing winding for complete demagnetization,

1  D T  LT N1I M , substituting I M to it, it gives:

N 3Vin
 L  N D   N 2  N D 
1  D   T  1  , then 1  D   32  1 
L  N
 p  3   N1  N 3 
N1
D
N 3  N1

EE4211 Advanced Power Electronics Page 3