KSMF2N60

600V N-Channel MOSFET

Features
• 1.6A, 600V, RDS(on) = 4.7Ω @VGS = 10 V
TO-220F
• Low gate charge ( typical 9.0 nC)
• Low Crss ( typical 5.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

General Description
These N-Channel enhancement mode power field effect
transistors are produced using Kersemi proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching D
performance, and withstand high energy pulse in the !

avalanche and commutation mode. These devices are well "

suited for high efficiency switch mode power supply.
! "
G! "
"

!
S

Absolute Maximum Ratings

TC = 25°C unless otherwise noted

Symbol Parameter KSMF2N60 Units

VDSS Drain-Source Voltage 600 V
ID Drain Current - Continuous (TC = 25°C) 1.6 A
- Continuous (TC = 100°C) 1.0 A
IDM Drain Current - Pulsed (Note 1) 6.4 A
VGSS Gate-Source Voltage ±
30 V
EAS Single Pulsed Avalanche Energy (Note 2) 140 mJ
IAR Avalanche Current (Note 1) 1.6 A
EAR Repetitive Avalanche Energy (Note 1) 2.8 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C) 28 W
- Derate above 25°C 0.22 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL 300 °C
1/8
from case for 5 seconds

Thermal Characteristics
Symbol Parameter Typ Max Units
RθJC Thermal Resistance, Junction-to-Case -- 4.46 °CW
RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °CW

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 KSMF2N60
Electrical Characteristics




T C = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 600 -- -- V
∆BVDSS Breakdown Voltage Temperature
ID = 250 µA, Referenced to 25°C -- 0.4 -- V/°C
/ ∆TJ Coefficient
IDSS VDS = 600 V, VGS = 0 V -- -- 10 µA
Zero Gate Voltage Drain Current
VDS = 480 V, TC = 125°C -- -- 100 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 3.0 -- 5.0 V
RDS(on) Static Drain-Source
VGS = 10 V, ID = 0.8 A -- 3.7 4.7 Ω
On-Resistance
gFS Forward Transconductance VDS = 50 V, ID = 0.8 A (Note 4) -- 2.0 -- S

Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 270 350 pF
Coss Output Capacitance f = 1.0 MHz -- 40 50 pF
Crss Reverse Transfer Capacitance -- 5 7 pF

Switching Characteristics
td(on) Turn-On Delay Time -- 10 30 ns
VDD = 300 V, ID = 2.4 A,
tr Turn-On Rise Time -- 25 60 ns
RG = 25 Ω
td(off) Turn-Off Delay Time -- 20 50 ns
(Note 4, 5)
tf Turn-Off Fall Time -- 25 60 ns
Qg Total Gate Charge VDS = 480 V, ID = 2.4 A, -- 9.0 11 nC
Qgs Gate-Source Charge VGS = 10 V -- 1.6 -- nC
Qgd Gate-Drain Charge (Note 4, 5) -- 4.3 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 1.6 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 6.4 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.6 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 2.4 A, -- 180 -- ns
Qrr Reverse Recovery Charge dIF / dt = 100 A/µs (Note 4)
-- 0.72 -- µC

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 100mH, IAS = 1.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD
2.4A, di/dt
200A/µs, VDD
BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width
300µs, Duty cycle
2%
5. Essentially independent of operating temperature

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 KSMF2N60
Typical Characteristics

VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
0 6.0 V
10
Bottom : 5.5 V

ID , Drain Current [A]

150

ID, Drain Current [A]

0
10
25

-55

-1
10

Notes :
Notes :
1. 250s Pulse Test 1. VDS = 50V
2. TC = 25 2. 250s Pulse Test

-2 -1
10 10
-1 0 1
10 10 10 2 4 6 8 10
VDS, Drain-Source Voltage [V] VGS , Gate-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

12

10 VGS = 10V
IDR , Reverse Drain Current [A]
Drain-Source On-Resistance

VGS = 20V
8
RDS(ON) [
],

0
10
6

4
150
25


Notes :
2 1. VGS = 0V

Note : TJ = 25 2. 250s Pulse Test

0 -1
0 1 2 3 4 5 6 10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
ID, Drain Current [A] VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperature

500 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd VDS = 120V
10 VDS = 300V
400
VGS , Gate-Source Voltage [V]

Ciss VDS = 480V

8
Capacitance [pF]

300
Coss
6

200

Notes : 4
1. VGS = 0 V
Crss 2. f = 1 MHz
100 2

Note : ID = 2.4A

0 0
-1 0 1 0 2 4 6 8 10
10 10 10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

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 KSMF2N60
Typical Characteristics (Continued)

1.2 3.0

2.5
Drain-Source Breakdown Voltage

1.1

Drain-Source On-Resistance
BV DSS , (Normalized)

RDS(ON) , (Normalized)
2.0

1.0 1.5

1.0

0.9
Notes :
1. VGS = 0 V

Notes :
2. ID = 250 A 0.5 1. VGS = 10 V
2. ID = 1.2 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

1.8

Operation in This Area

1
is Limited by R DS(on)
10 1.5

100 µs
1 ms 1.2
ID, Drain Current [A]
ID, Drain Current [A]

10 ms
0
10
100 ms
0.9
DC

0.6
-1
10

Notes :
o
1. TC = 25 C 0.3
o
2. TJ = 150 C
3. Single Pulse
-2
10 0.0
0 1 2 3
10 10 10 10 25 50 75 100 125 150

VDS, Drain-Source Voltage [V] TC, Case Temperature [
]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
( t) , T h e r m a l R e s p o n s e

D = 0 .5

0
10 0 .2

N o te s :
0 .1 1 . Z
J C ( t ) = 4 . 4 6  /W M a x .
2 . D u ty F a c t o r , D = t 1 /t 2
0 .0 5 3 . T J M - T C = P D M * Z
J C( t )

-1 0 .0 2
10
0 .0 1 PDM

JC

t1
t2
Z

s in g le p u ls e

-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

Figure 11. Transient Thermal Response Curve

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 KSMF2N60
Gate Charge Test Circuit & Waveform

VGS
Same Type
50K

as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

RL VDS
VDS 90%

VGS VDD
RG
10%
VGS
10V DUT
td(on) tr td(off)
tf
t on t off

Unclamped Inductive Switching Test Circuit & Waveforms

L 1 BVDSS
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)

10V DUT VDD VDS (t)

tp
tp Time

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 KSMF2N60

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

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 KSMF2N60

TO-220F
3.30 ±0.10

10.16 ±0.20 ø3.18 ±0.10 2.54 ±0.20

(7.00) (0.70)

6.68 ±0.20

15.87 ±0.20
15.80 ±0.20

(1.00x45°)

MAX1.47
9.75 ±0.30

0.80 ±0.10
(3
0°
)

#1
0.35 ±0.10 +0.10
0.50 –0.05 2.76 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]
4.70 ±0.20

9.40 ±0.20

2014-6-17 7 www.kersemi.com