Practice questions on Basics of semiconductors and PN junction

Q1. Given = 470 /Vs for Si, what is the hole drift velocity at = V/cm? What is the mean
path time and what is the average distance travelled between collisions, i.e., the mean free path?
Assume mass of a hole is 0.39 × and thermal velocity to be 2.2 × cm/s.

Q2. A Junction has and .What is (a) built in potential (Vbi) (b)
(c) (d)

Q3. The thermal-equilibrium concentration of hole p0 in silicon at T =300 K is 1015 cm-3. Find the value
of n0.

Q4. An ideal one-sided silicon n+-p junction has uniform doping on both sides of the abrupt junction. The
doping relation is Nd= 50×Na . The built-in potential barrier is Vbi = 0.75 V. The applied reverse bias
voltage is VR=10. What is the width of space charge region?

Q5. (a) Under equilibrium conditions at T > 0 K, what is the probability of an electron state being
occupied if it is located at the Fermi level?

(b) If EF is positioned at EC, determine (numerical answer required) the probability of finding
electrons in states at EC + kT.

(c) The probability a state is filled at EC + kT is equal to a probability a state is empty at EC + kT.
Where is the Fermi level located?

Q6. The doping around the metallurgical junction of a special diode is pictured in following figure.
Sketch the expected charge density, electric field, and electrostatic potential inside the diode based
on the depletion approximation. Properly scale and label relevant lengths. Include a few words of
explanation as necessary to forestall a misinterpretation of your sketches.
Q7. A germanium diode is formed with donor density, ND=1015 cm-3, and acceptor density NA =
1.5×1016 cm-3. Avalanche breakdown occurs in the diode when the field reaches 2.20 kV/cm.
Calculate the breakdown voltage.

Q8. Assume Si at T = 300 K, doped with arsenic at ND = 1020 cm-3. Make suitable assumption and
answer the following questions. (In this case you should assume that “heavy doping effects” cause
the dopants to be fully ionized and the band gap to shrink by 0.1 eV.)

(a) Compute the density of electrons in the conduction band.

(b) Compute the position of Fermi level.

(c) Compute the fraction of dopants that are ionized.

(d) Compute the density of holes in the valence band.

Q9. For the energy band sketched below, draw the sketches for the following.

(a) Carrier densities, n(x) and p(x) vs. position.

(b) Electrostatic potential V(x) vs. position.

(c) Electric field E vs. position.

(d) Space charge density, ρ(x) vs. position.

Q10. Find the resistivity at 300 K for a Si sample doped with 1.0×10 14 cm-3 of phosphorous atoms, 8.5×
1012 cm-3 of arsenic atoms and 1.12×1013 cm-3 of boron atoms. Assume that the impurities are
completely ionized and the mobilities are µn = 1500 cm2/Vs, µp = 500 cm2/Vs, independent of
impurity concentrations. Ni = 9.65×109 cm-3 in Si at 300 K.