This document analyzes the impedance and functional groups of silicon oxide (SiO2) derived from rice straw. Rice straw was treated with hydrochloric acid and burned in a furnace between 400-900°C to produce SiO2 samples. The samples were then characterized using LCR meter to analyze electrical properties and FTIR to analyze functional groups. The goal was to produce and analyze SiO2 from an agricultural waste biomass of rice straw.
This document analyzes the impedance and functional groups of silicon oxide (SiO2) derived from rice straw. Rice straw was treated with hydrochloric acid and burned in a furnace between 400-900°C to produce SiO2 samples. The samples were then characterized using LCR meter to analyze electrical properties and FTIR to analyze functional groups. The goal was to produce and analyze SiO2 from an agricultural waste biomass of rice straw.
This document analyzes the impedance and functional groups of silicon oxide (SiO2) derived from rice straw. Rice straw was treated with hydrochloric acid and burned in a furnace between 400-900°C to produce SiO2 samples. The samples were then characterized using LCR meter to analyze electrical properties and FTIR to analyze functional groups. The goal was to produce and analyze SiO2 from an agricultural waste biomass of rice straw.
Analysis of Impedance and Functional Group of Silicon Oxide
(SiO2) from Rice Straw
Nazopatul P H1, E K Palupi1, Irmansyah1, Irzaman 1,2 1 Department of Physics, Bogor Agricultural Institute, Indonesia 2 Researchers at Surfactan and Bioenergy Research Center (SBRC) of the Institute for Research and Community Service (LPPM IPB), Bogor Agricultural Institute, Indonesia nazopatul_biofis@ apps.ipb.ac.id; irzaman @ apps.ipb.ac.id Abstract. Research on silicon oxide (SiO2) from biomass has been obtained. In this study using the biomass of rice straw, which is one of the rice agricultural wastes. Rice straw was treated with acid using hydrochloric acid (HCl) before burning. Rice straw charcoal burned in the furnace at temperature of 400 oC to 900 oC with a heating rate of 1.7 oC/ minute for 2 hours. The increase in heating temperature was varied at 800 oC, 850 oC, and 900 oC. Silicon oxide samples were characterized and analyzed based on electrical properties and their functional groups using LCR- meter and FTIR.