Si4834BDY

Vishay Siliconix

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

PRODUCT SUMMARY FEATURES

VDS (V) RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21
Definition
0.022 at VGS = 10 V 7.5
30 • TrenchFET® Power MOSFET
0.030 at VGS = 4.5 V 6.5
• PWM Optimized
• 100 % Rg Tested
SCHOTTKY PRODUCT SUMMARY • Compliant to RoHS Directive 2002/95/EC
VSD (V)
VDS (V) Diode Forward Voltage IF (A) APPLICATIONS
30 0.50 V at 1.0 A 2.0 • Symmetrical Buck-Boost DC/DC Converter
D1 D2

SO-8

S1 1 8 D1

G1 2 7 D1 Schottky Diode
G1 G2
S2 3 6 D2

G2 4 5 D2

Top View
S1 S2
Ordering Information: Si4834BDY-T1-E3 (Lead (Pb)-free)
Si4834BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS ± 20
TA = 25 °C 7.5 5.7
Continuous Drain Current (TJ = 150 °C)a ID
TA = 70 °C 6.0 4.6
A
Pulsed Drain Current IDM 30
Continuous Source Current (Diode Conduction)a IS 1.7 0.9
TA = 25 °C 2.0 1.1
Maximum Power Dissipationa PD W
TA = 70 °C 1.3 0.7
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

THERMAL RESISTANCE RATINGS

MOSFET Schottky
Parameter Symbol Typ. Max. Typ. Max. Unit
t ≤ 10 s 52 62.5 53 62.5
Maximum Junction-to-Ambienta RthJA
Steady State 93 110 93 110 °C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 35 40 35 40
Notes:
a. Surface Mounted on 1" x 1" FR4 board.

Document Number: 72064 www.vishay.com

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Vishay Siliconix

MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ.a Max. Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.8 3.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
Ch-1 100
VDS = 30 V, VGS = 0 V
Ch-2 1
Zero Gate Voltage Drain Current IDSS µA
Ch-1 2000
VDS = 30 V, VGS = 0 V, TJ = 85 °C
Ch-2 15
On-State Drain Current b ID(on) VDS = 5 V, VGS = 10 V 20 A
VGS = 10 V, ID = 7.5 A 0.017 0.022
Drain-Source On-State Resistanceb RDS(on) Ω
VGS = 4.5 V, ID = 6.5 A 0.024 0.030
Forward Transconductanceb gfs VDS = 15 V, ID = 7.5 A 19 S
Ch-1 0.47 0.5
Diode Forward Voltageb VSD IS = 1 A, VGS = 0 V V
Ch-2 0.75 1.2
Dynamica
Total Gate Charge Qg 7 11
Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 7.5 A 2.9 nC
Gate-Drain Charge Qgd 2.5
Gate Resistance Rg 0.5 1.5 2.6 Ω
Turn-On Delay Time td(on) 9 15
Rise Time tr VDD = 15 V, RL = 15 Ω 10 17
Turn-Off Delay Time td(off) ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 19 30
ns
Fall Time tf 9 15
Ch-1 32 55
Source-Drain Reverse Recovery Time trr IF = 1.7 A, dI/dt = 100 A/µs
Ch-2 35 55
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit
IF = 1.0 A 0.47 0.50
Forward Voltage Drop VF V
IF = 1.0 A, TJ = 125 °C 0.36 0.42
VR = 30 V 0.004 0.100
Maximum Reverse Leakage Current Irm VR = 30 V, TJ = 100 °C 0.7 10 mA
VR = - 30 V, TJ = 125 °C 3.0 20
Junction Capacitance CT VR = 10 V 50 pF

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

www.vishay.com Document Number: 72064

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 Si4834BDY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
30 30
VGS = 10 V thru 5 V
4V
25 25

I D - Drain Current (A)

I D - Drain Current (A)

20 20

15 15

10 10
TC = 125 °C

5 5
25 °C
3V - 55 °C
0 0
0 2 4 6 8 10 0 1 2 3 4 5

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

1200
0.040

Ciss
960
RDS(on) - On-Resistance (Ω)

0.030
C - Capacitance (pF)

VGS = 4.5 V
720

0.020 VGS = 10 V
480

Coss
0.010 240
Crss

0
0.000
0 5 10 15 20 25 30
0 5 10 15 20 25 30

VDS - Drain-to-Source Voltage (V)

I D - Drain Current (A)
On-Resistance vs. Drain Current Capacitance

10 1.8
VDS = 15 V VGS = 10 V
VGS - Gate-to-Source Voltage (V)

ID = 7.5 A ID = 7.5 A
1.6
8
R DS(on) - On-Resistance

1.4
(Normalized)

1.2

4
1.0

2
0.8

0 0.6
0 3 6 9 12 15 - 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature

Document Number: 72064 www.vishay.com

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Si4834BDY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C unless otherwise noted

20 0.06

10
0.05

R DS(on) - On-Resistance (Ω)

I S - Source Current (A)

0.04

ID = 7.5 A
TJ = 150 °C
0.03
1
0.02
TJ = 25 °C
0.01

0.1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

0.4 100

0.2
80
ID = 250 µA
V GS(th) Variance (V)

0.0
60
Power (W)

- 0.2

40
- 0.4

- 0.6 20

- 0.8 0
- 50 - 25 0 25 50 75 100 125 150 10- 3 10- 2 10- 1 1 10
TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power, Junction-to-Ambient

100
Limited by RDS(on)*
1 ms

10
ID - Drain Current (A)

1 10 ms

100 ms

1s
0.1
TC = 25 °C 10 s
Single Pulse
DC

0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VDS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Foot

www.vishay.com Document Number: 72064

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 Si4834BDY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C unless otherwise noted

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = R thJA = 93 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10- 4 10- 3 10- 2 10- 1 1 10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
10- 4 10- 3 10- 2 10- 1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot

Document Number: 72064 www.vishay.com

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Si4834BDY
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
20 10
10
TJ = 150 °C
I R - Reverse Current (mA)

I F - Forward Current (A)

1

0.1 30 V TJ = 25 °C
24 V
0.01

0.001

0.0001 1
0 25 50 75 100 125 150 0.0 0.3 0.6 0.9 1.2 1.5

TJ - Temperature (°C) VF - Forward Voltage Drop (V)

Reverse Current vs. Junction Temperature Forward Voltage Drop

200

160
C - Capacitance (pF)

120

80
Coss

40

0
0 6 12 18 24 30

VDS - Drain-to-Source Voltage (V)

Capacitance

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72064.

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6 S09-0869-Rev. D, 18-May-09
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Revision: 08-Feb-17 1 Document Number: 91000