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UVLS
2015
7 NXE:3350B 16 nm 70 nm 1.5/2.5 nm 3.5 nm
D1L
UVLS – Mk2
SMASH – MkX
3.x
Lens thermal
NXE:3450C 13 nm 50 nm 1.2/<1.7 nm 2.0 nm
<D1L
2~2.5
High NA <8 nm <40 nm 1.0/<1.4 nm 1.5 nm
Anamorphic lens
Stages, handlers
Roadmap: Nov 2015
Products under study
#Critical exposures for critical logic
Public
Further reduction of # exposures using EUV 0.55 NA Slide 4
25 February 2016
High-
NA
Source: Luc van den Hove, IMEC, ”Technologies for the intuitive internet of everything”, ITPC 2015,
Larger NA reduces Local CDU
Public
Due to larger aerial image contrast Slide 5
25 February 2016
0.33NA
0.55NA
200
180
Effective TPT [wf/hr]*
160
0.55NA @ 500W
140
120 0.33NA @ 350W
100 Quasar Illumination
80 LCDU = 2.0nm 0.33
Source
• Increased power
Source
• Increased power
30deg!!
EUV Optical Train
Public
Slide 10
25 February 2016
Reticle (mask)
field facet mirror
projection
intermediate focus optics
illuminator
Two key-area’s
where High-NA
imposes large
angles
plasma
source
collector wafer
W. Kaiser, J. van Schoot, Sematech Workshop on High-NA, 9 July 2013
Simple model of the optical column
Public
Bending out the light cones at the mask reduces contrast strongly Slide 11
25 February 2016
4x10nm = 40nm
𝑁𝐴𝑤𝑎𝑓𝑒𝑟
𝑁𝐴𝑚𝑎𝑠𝑘 = effective line effective line
mask
~120nm
illumination optics w w
j
NAmask projection
Small angle optics
Large angle
Mag=4
source wafer
Image contrast increases with a larger magnification
Public
But only needed in one orientation Slide 12
25 February 2016
2 requirement
2
NILS*
NILS*
1 13 nm L/S, 0.33 NA (k1=0.318) 1 13 nm L/S, 0.33 NA (k1=0.318)
8 nm L/S, 0.55 NA (k1=0.326) 8 nm L/S, 0.55 NA (k1=0.326)
0 0
4 5 6 7 8 4 5 6 7 8
Magnification Magnification
Anamorphic
High-NA tool
magnification needed
for High-NA
*NILS = Normalized Image Log Slope, J. Van Schoot, et al, “EUV lithography scanner for
measure for image contrast sub-8nm resolution,” Proc. SPIE 9422, (2015).
High-NA >0.5NA 4x/8x anamorphic magnification
Public
Chief Ray Angle at Mask can be maintained Slide 13
25 February 2016
scan
pupil
scan
High-NA Anamorphic Lens prints a half field
By utilizing the current 6” mask Public
Slide 14
25 February 2016
Mask
field
132 mm
132 mm
size
Lens 4x 4x/8x
26 mm 26 mm
16.5 mm
Wafer QF
33 mm
Wafer FF field
size HF
16x9 16x9
“The Mask”
(24x36mm2)
Anamorphic
Camera
Anamorphic
Projector
High-NA optics design concepts available
Public
Larger elements with tighter specifications, no showstoppers Slide 16
25 February 2016
Wafer
level NA 0.25 NA 0.33 NA >0.5 Design examples
B. Kneer, et al, “EUV lithography optics for sub-9nm resolution,” Proc. SPIE 9422, (2015).
Imaging verification of the new Half Field concept
Public
Logic N5 clip Metal-1, 11nm lines, SMO is done at 8x Slide 17
25 February 2016
FF QFHF
unobscured
obscured
Angles and
Substrate
angular spread
decrease
wafer
HighNA
• Start pitch: 24nm for high-NA, 40nm for NA 0.33 k1 = 0.49 in both cases. obscured pupil
• Anamorphic high NA w/ central obscuration: comparable exposure latitude, @ smaller pitches.
• Lower Best Focus variation for high NA.
Overview main System Changes High-NA tool Public
Slide 20
29 September 2015
Mask Stage Illuminator
• 4x current acceleration • Improved
New Frames • Same for REMA transmission
• Larger to
support Lens
Source
• Increased power
Intermediate
Focus
Pupil Facet Mirror
Overview main System Changes High-NA tool Public
Slide 22
29 September 2015
Mask Stage Illuminator
• 4x current acceleration • Improved
New Frames • Same for REMA transmission
• Larger to
support Lens
Source
• Increased power
Y-magnification 4x 8x
Full Fields Half Fields
• 2x wafer acceleration results in 4x
mask acceleration
∞!
Improved RS motor Power ~ 𝐼 2 ∙ 𝑅
Current RS Power: 9 x ref
No solution
= 𝑘 ∙ 𝑎𝑐𝑐 ∙ 𝑚𝑎𝑠𝑠 2 ∙ 𝑅𝑚𝑜𝑡𝑜𝑟
200 10 x
185
870%
140
120 HF
100
80
60 500W Watt
500 Watt
60mJ/cm2 30mJ/cm2
40
High-NA Half Field scanner
20
needs 500W for
0
0 5 10 15 20 25 30 35
150wph at 60mJ/cm2
Source Power/Dose [W/(mJ/cm2]
Overview main System Changes High-NA tool Public
Slide 26
29 September 2015
Mask Stage Illuminator
• 4x current acceleration • Improved
New Frames • Same for REMA transmission
• Larger to
support Lens
Source
• Increased power
k2 = 1
Rayleigh NXE:3300
λ
𝐷𝑜𝐹 = 𝑘2 focus control budget High-NA
𝑁𝐴2 at introduction
Focus latitude scales according expectation
Public
Spaces through pitch with small annular illumination Slide 28
25 February 2016
1.6 1.6
I0 [a.u.]
I0 [a.u.]
1.4 1.4
1.2 1.2
1.0 1.0
-150 -75 0 75 -150 -50 -25 0 25 -50
Focus [nm] Focus [nm]
150nm 50nm
Overlapping process window @ 8%EL 45nm
NA=0.55, Random cuts, 24nm minimum pitch Public
Slide 29
25 February 2016
Dose [a.u.]
1.05 8
6
1.00
4
0.95 2
0
-30 -20 -10 0 10 20 30 0 10 20 30 40 50 60
Focus [nm] DoF [nm]
(4x)
*L. de Winter, Understanding the Litho-impact of Phase due to 3D Mask-Effects when using off-axis illumination, EMLC 2015
Way forward to 30 nm focus control
Public
Slide 31
25 February 2016
120
100
Focus Control [nm]
80
60
40
20
0
3300 Machine Optics Product wafer
performance improvements improvements flatness
(level sensor,
stages, etc.)
Summary
Public
Slide 32
25 February 2016
Thank you
for your attention