SEMICONDUCTOR KF10N68F

N CHANNEL MOS FIELD

TECHNICAL DATA EFFECT TRANSISTOR

General Description
A C
This planar stripe MOSFET has better characteristics, such as fast

F
switching time, low on resistance, low gate charge and excellent

O
avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS

B
A 10.16 +_ 0.2
correction and switching mode power supplies.

G
B 15.87 +_ 0.2
C _ 0.2
2.54 +
_ 0.1
FEATURES D 0.8 +
E _ 0.1
3.18 +
・VDSS=680V, ID=10A

K
F _ 0.1
3.3 +
・Drain-Source ON Resistance : G 12.57 +_ 0.2
L M
R H _ 0.1
0.5 +
RDS(ON)(Max)=0.95Ω @VGS=10V

J
J 13.0 +_ 0.5
・Qg(typ.)= 24nC K _ 0.1
3.23 +
D
L 1.47 MAX
M 1.47 MAX
N N H
MAXIMUM RATING (Tc=25℃) N _ 0.2
2.54 +
O _ 0.2
6.68 +
Q _ 0.2
4.7 +
1. GATE
CHARACTERISTIC SYMBOL RATING UNIT 2. DRAIN R _ 0.2
2.76 +

Q
1 2 3
3. SOURCE

Drain-Source Voltage VDSS 680 V

Gate-Source Voltage VGSS ±30 V
TO-220IS (1)
@TC=25℃ 10*
ID
Drain Current @TC=100℃ 6* A
Pulsed (Note1) IDP 25*
Single Pulsed Avalanche Energy EAS 360 mJ
(Note 2)
Repetitive Avalanche Energy EAR 16.5 mJ
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 4.5 V/ns
(Note 3)
Drain Power Tc=25℃ 46 W
PD
Dissipation Derate above 25℃ 0.37 W/℃
Maximum Junction Temperature Tj 150 ℃
Storage Temperature Range Tstg -55～150 ℃
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 2.7 ℃/W
Thermal Resistance,
RthJA 62.5 ℃/W
Junction-to-Ambient
* : Drain current limited by maximum junction temperature.

PIN CONNECTION

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 KF10N68F

ELECTRICAL CHARACTERISTICS (Tc=25℃)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250μA, VGS=0V 680 - - V
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj ID=250μA, Referenced to 25℃ - 0.65 - V/℃
Drain Cut-off Current IDSS VDS=680V, VGS=0V - - 10 μA
Gate Threshold Voltage Vth VDS=VGS, ID=250μA 2.5 - 4.5 V
Gate Leakage Current IGSS VGS=±30V, VDS=0V - - ±100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=5A - 0.76 0.95 Ω
Dynamic
Total Gate Charge Qg - 24 -
VDS=520V, ID=10A
Gate-Source Charge Qgs - 6 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 8 -
Turn-on Delay time td(on) - 32 -
VDD=325V
Turn-on Rise time tr - 35 -
ID=10A ns
Turn-off Delay time td(off) - 88 -
RG=25Ω (Note4,5)
Turn-off Fall time tf - 30 -
Input Capacitance Ciss - 1350 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 140 - pF
Reverse Transfer Capacitance Crss - 13 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 10
VGS<Vth A
Pulsed Source Current ISP - - 40
Diode Forward Voltage VSD IS=10A, VGS=0V - - 1.4 V
Reverse Recovery Time trr IS=10A, VGS=0V, - 400 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/μs - 4.7 - μC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =6.8mH, IS=10A, VDD=50V, RG=25Ω, Starting Tj=25℃.
Note 3) IS≤10A, dI/dt≤200A/㎲, VDD≤BVDSS, Starting Tj=25℃.
Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%.
Note 5) Essentially independent of operating temperature.

Marking

1
KF10N68
F 813 2

1 PRODUCT NAME

2 LOT NO

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 KF10N68F

Fig1. ID - VDS Fig2. ID - VGS

100
VDS=30V
VGS=10V 1
10
Drain Current ID (A)

Drain Current ID (A)

VGS=7V
10

VGS=5V 100 C 25 C
0
10
1

-1
0.1 10
0.1 1 10 100 2 4 6 8 10

Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)

Fig3. BVDSS - Tj Fig4. RDS(ON) - ID

Normalized Breakdown Voltage BVDSS

1.2 3.0
VGS = 0V
On - Resistance RDS(ON) (Ω)

IDS = 250
2.5
1.1
2.0

1.0 1.5

1.0 VGS=6V
0.9 VGS=10V
0.5

0.8 0
-100 -50 0 50 100 150 0 2 4 6 8 10 12 14 16

Junction Temperature Tj ( C ) Drain Current ID (A)

Fig5. IS - VSD Fig6. RDS(ON) - Tj

2
10 3.0
VGS =10V
Reverse Drain Current IS (A)

IDS = 5A
2.5
Normalized On Resistance

100 C 25 C

1 2.0
10

1.5

0 1.0
10

0.5

-1 0.0
10
0.4 0.6 0.8 1.0 1.2 1.4 1.8 -100 -50 0 50 100 150

Source - Drain Voltage VSD (V) Junction Temperature Tj ( C)

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 KF10N68F

Fig 7. C - VDS Fig8. Qg- VGS

104 12
ID=10A

Gate - Source Voltage VGS (V)

VDS = 520V
10
Ciss
Capacitance (pF)

103 8

6
Coss
102 4

2
Crss
101 0
0 10 20 30 40 0 4 8 12 16 20 24 28 32

Gate - Charge Qg (nC)

Drain - Source Voltage VDS (V)

Fig9. Safe Operation Area Fig10. ID - Tj

101 12

10
10µs
Drain Current ID (A)

100
100µs
8
1ms
ID (A)

1 6
10ms

4
10-1 DC
2

10-2 0
100 101 102 103 0 25 50 75 100 125 150

Drain - Source Voltage VDS (V) Tc (Ƅ)

Fig11. Transient Thermal Response Curve

Transient Thermal Resistance

100 Duty=0.5

0.2

0.1
PDM
0.05
10-1 t1
0.02
t2
0.01

Single Pulse - Duty Factor, D= t1/t2

10-2
10-5 10-4 10-3 10-2 10-1 100 101

TIME (sec)

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 KF10N68F

Fig12. Gate Charge

VGS

10 V
Fast
Recovery
ID Diode

0.8 VDSS
ID
1.0 mA
Q
VDS Qgs Qgd
Qg
VGS

Fig13. Single Pulsed Avalanche Energy

1 BVDSS
EAS= LIAS2
2 BVDSS - VDD

BVDSS
L
IAS
50V

25Ω
VDS ID(t)

VGS VDD VDS(t)

10 V

Time
tp
Fig14. Resistive Load Switching

VDS
90%

RL

0.5 VDSS
VGS 10%
td(off)
25 Ω td(on) tr
VDS tf

ton toff
VGS
10V

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 KF10N68F

Fig15. Source - Drain Diode Reverse Recovery and dv /dt

DUT Body Diode Forword Current

VDS
ISD
IF (DUT) di/dt

IRM

IS
Body Diode Reverse Current

0.5 VDSS
VDS Body Diode Recovery dv/dt
(DUT)
driver VSD
VDD

10V VGS
Body Diode Forword Voltage drop

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