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1096B
IRF7104
HEXFET® Power MOSFET
l Adavanced Process Technology
1 8
l Ultra Low On-Resistance S1 D1
VDSS = -20V
l Dual P-Channel MOSFET G1 2 7
D1
l Surface Mount 3 6
l Available in Tape & Reel
S2 D2 RDS(on) = 0.250Ω
4 5
l Dynamic dv/dt Rating G2 D2
8/25/97
IRF7104
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.015 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.19 0.25 VGS = -10V, I D = -1.0A
RDS(ON) Static Drain-to-Source On-Resistance Ω
––– 0.30 0.40 VGS = -4.5V, ID = -0.50A
VGS(th) Gate Threshold Voltage -1.0 ––– -3.0 V VDS = VGS, I D = -250µA
gfs Forward Transconductance ––– 2.5 ––– S V DS = -15V, ID = -2.3A
––– ––– -2.0 VDS = -16V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– -25 VDS = -16V, VGS = 0V, TJ = 55 °C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V
Qg Total Gate Charge ––– 9.3 25 I D = -2.3A
Q gs Gate-to-Source Charge ––– 1.6 ––– nC VDS = -10V
Q gd Gate-to-Drain ("Miller") Charge ––– 3.0 ––– VGS = -10V
t d(on) Turn-On Delay Time ––– 12 40 VDD = -10V
tr Rise Time ––– 16 40 I D = -1.0A
ns
t d(off) Turn-Off Delay Time ––– 42 90 R G = 6.0Ω
tf Fall Time ––– 30 50 RD = 10Ω
D
LD Internal Drain Inductance ––– 4.0 –––
Between lead,6mm(0.25in.)
nH G
from package and center
LS Internal Source Inductance ––– 6.0 –––
of die contact S
Notes:
Repetitive rating; pulse width limited by Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
ISD ≤ -2.3A, di/dt ≤ 100A/µs, VDD ≤ V (BR)DSS, Surface mounted on FR-4 board, t ≤ 10sec.
TJ ≤ 150°C
IRF7104
( Normalized)
-V GS , Gate-to-Source Voltage ( V )
C , Capacitance ( pF )
SEE FIGURE 12
VGS
D.U.T.
RG
-ID , Drain Current ( A )
-
+ VDD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
td(on) tr t d(off) tf
VGS
10%
TA , Ambient Temperature ( °C )
90%
VDS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature Fig 10b. Switching Time Waveforms
100
D = 0.50
(Z thJA )
0.20
10
0.10
Thermal Response
0.05
0.02
PDM
0.01
1
SINGLE PULSE t1
(THERMAL RESPONSE) t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.0001 0.001 0.01 0.1 1 10 100
t1, Rectangular Pulse Duration (sec)
Current Regulator
Same Type as D.U.T.
50KΩ
QG 12V .2µF
.3µF
-10V -
QGS QGD D.U.T. +VDS
VGS
VG
-3mA
IG ID
Charge Current Sampling Resistors
Fig 12a. Basic Gate Charge Waveform Fig 12b. Gate Charge Test Circuit
IRF7104
Peak Diode Recovery dv/dt Test Circuit
+
- +
-
RG • dv/dt controlled by RG +
• ISD controlled by Duty Factor "D" V DD
-
• D.U.T. - Device Under Test
VGS
[VGS=10V ] ***
Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5% [ ISD ]
INCHES MILLIMETERS
D DIM
5 MIN MAX MIN MAX
-B-
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
8 7 6 5
5 B .014 .018 0.36 0.46
E H
-A- 0.25 (.010) M A M C .0075 .0098 0.19 0.25
1 2 3 4
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e e .050 BASIC 1.27 BASIC
K x 45°
6X e1 e1 .025 BASIC 0.635 BASIC
θ
A H .2284 .2440 5.80 6.20
0.25 (.010) M C A S B S θ 0° 8° 0° 8°
RECOMMENDED FOOTPRINT
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 0.72 (.028 )
8X
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
6.46 ( .255 ) 1.78 (.070)
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
8X
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
1.27 ( .050 )
3X
E X A M P LE : TH IS IS A N IR F 7 101
D A T E C O D E (Y W W )
Y = LA S T D IG IT O F T H E YE A R
W W = W EEK
3 12
IN T E R N A TI ON A L XX X X
F 7 101
R E C T IF IE R W AFER
LO G O LO T C O D E
PART NUMBER
T OP (LA S T 4 D IG IT S ) B O T TO M
IRF7104
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)
T ER M IN A L N U M B E R 1
12 .3 ( .48 4 )
11 .7 ( .46 1 )
8 .1 ( .3 18 )
7 .9 ( .3 12 ) F E ED D IR E C T IO N
N O TE S:
1 . CO N TRO LL IN G D IM E N SIO N : M ILLIM E TE R.
2 . A LL DIM E NS IO NS A R E S HO W N IN M ILL IM E TER S (INC HE S ).
3 . O UTL IN E C O NFO RM S TO E IA - 48 1 & E IA -5 41 .
33 0. 00
(12 .99 2)
M A X.
1 4. 40 ( .5 66 )
1 2. 40 ( .4 88 )
N O T ES :
1. C O N T R O LL IN G D IM E N S IO N : M IL LIM E T ER .
2. O U T L IN E C O N F O R M S T O E IA -48 1 & E IA -54 1.
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http://www.irf.com/ Data and specifications subject to change without notice. 8/97