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Features
■ 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V
■ 100%Avalanche Tested
General Description
This N-Channel enhancement mode power field effect transistors
are produced using Winsemi's proprietary, planar stripe ,DMOS
technology. This advanced technology has been especially tailored
to minimize on-state resistance , provide superior switching
performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficiency
switch mode power supplies.
Thermal Characteristics
Value
Symbol Parameter Units
Min Typ Max
RQJC Thermal Resistance , Junction -to -Case - - 0.42 ℃/W
Rev.A Apr.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
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Electrical Characteristics(Tc=25℃)
Characteristics Symbol Test Condition Min Type Max Unit
Gate leakage current IGSS VGS=±30V,VDS=0V - - ±100 nA
VDS=900V,V GS=0V - - 10 µA
Drain cut -off current IDSS
VDS=720V,Tc=125℃ 100 µA
Qgd (Note4,5)
Gate-drain("miller") Charge - 35 -
2/7
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3/7
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4/7
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5/7
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6/7
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TO-247 Package Dimension
TO-247
Unit:mm
7/7
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