2N5114/5115/5116

P-Channel JFETs

Product Summary
Part Number VGS(off) (V) rDS(on) Max (
) ID(off) Typ (pA) tON Max (ns)
2N5114 5 to 10 75 –10 16
2N5115 3 to 6 100 –10 30
2N5116 1 to 4 150 –10 42

2N5116, For applications information see AN104, page 1.

Features Benefits Applications

Low On-Resistance: 2N5114 <75

Low Error Voltage
Analog Switches

Fast Switching—tON: 16 ns
High-Speed Analog Circuit Performance
Choppers

High Off-Isolation—ID(off): –10 pA
Negligible “Off-Error,” Excellent Accuracy
Sample-and-Hold

Low Capacitance: 6 pF
Good Frequency Response
Normally “On” Switches

Low Insertion Loss
Eliminates Additional Buffering
Current Limiters

Description
The 2N5114 series consists of p-channel JFET analog The 2N5114 series is available with JAN, JANTX, or
switches designed to provide low on-resistance, good JANTXV level processing, (see 2N5114 JAN series data
off-isolation, and fast switching. These JFETs are sheet).
optimized for use in complementary switching
applications with the Siliconix 2N4856A series.

TO-206AA
(TO-18)

2 3
G D
Case
Top View

Absolute Maximum Ratings

Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . –55 to 200C
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . 300C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Notes
a. Derate 3 mW/C above 25C

Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70260.
Applications information may also be obtained via FaxBack, request document #70597.

Siliconix 1
P-37410—Rev. D, 04-Jul-94
2N5114/5115/5116
Specificationsa
Limits
2N5114 2N5115 2N5116
Parameter Symbol Test Conditions Typb Min Max Min Max Min Max Unit
Static
Gate-Source
V(BR)GSS IG = 1 mA , VDS = 0 V 45 30 30 30
Breakdown Voltage V
Gate-Source Cutoff Voltage VGS(off) VDS = –15 V, ID = –1 nA 5 10 3 6 1 4
VDS = –18 V –30 –90
Saturation Drain Currentc IDSS VGS = 0 V mA
VDS = –15 V –15 –60 –5 –25
VGS = 20 V, VDS = 0 V 5 500 500 500 pA
Gate Reverse Current IGSS
TA = 150
C 0.01 1 1 1 mA
Gate Operating Currentd IG VDG = –15 V, ID = –1 mA –5
VGS = 12 V –10 –500
pA
VDS = –15 V VGS = 7 V –10 –500
VGS = 5 V –10 –500
Drain Cutoff Current ID(off)
VGS = 12 V –0.02 –1
VDS = –15
15 V
VGS = 7 V –0.02 –1 mA
TA = 150
150
CC
VGS = 5 V –0.02 –1
ID = –15 mA –1.0 –1.3
Drain-Source On-Voltage VDS(on)
( ) VGS = 0 V ID = –7 mA –0.7 –0.8 V
ID = –3 mA –0.5 –0.6
Drain-Source
rDS(on) VGS = 0 V, ID = –1 mA 75 100 150 W
On-Resistance
Gate-Source
VGS(F) IG = –1 mA , VDS = 0 V –0.7 –1 –1 –1 V
Forward Voltage

Dynamic
Common-Source
gfs 4.5 mS
Forward Transconductance d VDS = –15 V,, ID = –1 mA
Common-Source f = 1 kHz
kH
gos 20 mS
Output Conductanced
Drain-Source
rds(on) VGS = 0 V, ID = 0 mA , f = 1 kHz 75 100 150 W
On-Resistance
Common-Source VDS = –15 V, VGS = 0 V
Ciss 20 25 25 25
Input Capacitance f = 1 MHz
VGS = 12 V 5 7 ppF
Common Source
Common-Source
VDS = 0 V
Reverse Transfer Crss VGS = 7 V 6 7
f = 1 MHz
Capacitance
VGS = 5 V 6 7
Equivalent Input VDS = 10 V, ID = 10 mA nV⁄
en 20
Noise Voltaged f = 1 kHz √Hz

Switching
td(on) 6 10 12
Turn-On Time
tr 10 20 30
See Switching Circuit ns
td(off) 6 8 10
Turn-Off Time
tf 15 30 50

Notes
a. TA = 25
C unless otherwise noted. PSCIA
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. Pulse test: PW
300 ms duty cycle
3%.
d. This parameter not registered with JEDEC.

2 Siliconix
P-37410—Rev. D, 04-Jul-94
 2N5114/5115/5116
Typical Characteristics
On-Resistance and Drain Current Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage vs. Gate-Source Cutoff Voltage
200 –100 18 250
gfs and gos @ VDS = –15 V
rDS(on) – Drain-Source On-Resistance ( W )

IDSS VGS = 0 V, f = 1 kHz

g fs – Forward Transconductance (mS)

I DSS – Saturation Drain Current (mA)
160 –80 15 200

g  – Output Conductance ( mS)

rDS gfs
120 –60 12 150
gos

80 –40 9 100

40 –20 6 50
rDS @ ID = –1 mA, VGS = 0 V
IDSS @ VDS = –15 V, VGS = 0 V

0 0 3 0
0 2 4 6 8 10 0 2 4 6 8 10
VGS(off) – Gate-Source Cutoff Voltage (V) VGS(off) – Gate-Source Cutoff Voltage (V)

On-Resistance vs. Drain Current On-Resistance vs. Temperature

250 300
ID = –1 mA
rDS(on) – Drain-Source On-Resistance ( W )

rDS(on) – Drain-Source On-Resistance ( W )

TA = 25
C

rDS changes X 0.7%/
C
200 240
VGS(off) = 1.5 V

150 180 VGS(off) = 1.5 V

3V

3V
100 120
5V
5V
50 60

0 0
–1 –10 –100 –55 –35 –15 5 25 45 65 85 105 125
ID – Drain Current (mA) TA – Temperature (
C)

Turn-On Switching Turn-Off Switching

50 20
tr approximately independent of ID
VDD = –10 V, RG = 220 W tf VGS(off) = 1.5 V
VGS(H) = 10 V, VGS(L) = 0 V
40 16
5V
Switching Time (ns)

Switching Time (ns)

30 tON @ ID = –5 mA 12
tON @ ID = –10 mA
td(off) VGS(off) = 1.5 V

20 8
5V

10 4
tr @ ID = –5 mA VDD = –10 V, VGS(H) = 10 V, VGS(L) = 0 V
0 0
0 1 2 3 4 5 0 –3 –6 –9 –12 –15
VGS(off) – Gate-Source Cutoff Voltage (V) ID – Drain Current (mA)

Siliconix 3
P-37410—Rev. D, 04-Jul-94
2N5114/5115/5116
Typical Characteristics (Cont’d)
Output Characteristics Output Characteristics
–2 –2
VGS = 0 V VGS = 0 V 0.2 V 0.4 V
1.5 V
0.5 V
–1.6 –1.6
I D – Drain Current (mA)

I D – Drain Current (mA)

1.0 V 0.6 V

–1.2 –1.2
2.0 V

–0.8 –0.8
0.8 V

–0.4 –0.4
VGS(off) = 3 V VGS(off) = 1.5 V
0 0
0 –0.1 –0.2 –0.3 –0.4 –0.5 0 –0.2 –0.4 –0.6 –0.8 –1.0
VDS – Drain-Source Voltage (V) VDS – Drain-Source Voltage (V)

Output Characteristics Output Characteristics

–25 –2
VGS = 0 V
VGS(off) = 3 V VGS = 0 V
–20 –1.6 3V
I D – Drain Current (mA)

I D – Drain Current (mA)

0.5 V
–15 –1.2 2V
4V
1.0 V 1V
–10 –0.8

1.5 V
–5 –0.4
2.0 V
VGS(off) = 5 V
0 0
0 –4 –8 –12 –16 –20 0 –0.1 –0.2 –0.3 –0.4 –0.5
VDS – Drain-Source Voltage (V) VDS – Drain-Source Voltage (V)

Capacitance vs. Gate-Source Voltage Gate Leakage Current

30 100 nA
VDS = 0 V
f = 1 MHz 10 nA ID= –10 mA
24 –1 mA
TA = 125
C
1 nA
I G – Gate Leakage
Capacitance (pF)

18
IGSS @ 125
C
Ciss 100 pA
–10 mA
12
10 pA
TA = 25
C
Crss
6 1 pA IGSS @ 25
C
–1 mA

0 0.1 pA
0 4 8 12 16 20 0 –10 –20 –30 –40 –50
VGS – Gate-Source Voltage (V) VDG – Drain-Gate Voltage (V)

4 Siliconix
P-37410—Rev. D, 04-Jul-94
 2N5114/5115/5116
Typical Characteristics (Cont’d)
Transfer Characteristics Transfer Characteristics
–10 –40
VGS(off) = 1.5 V VDS = –15 V VGS(off) = 3 V VDS = –15 V

–8 –32

I D – Drain Current (mA)

I D – Drain Current (mA)

–6 TA = –55
C –24
TA = –55
C

25
C 25
C
–4 –16

–2 –8
125
C
125
C

0 0
0 0.2 0.4 0.6 0.8 1.0 0 1 2 3 4 5
VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V)

Transfer Characteristics Noise Voltage vs. Frequency

–80 100
VGS(off) = 5 V VDS = –15 V
(nV / √ Hz)

–64 ID = –0.1 mA
I D – Drain Current (mA)

–48 –1 mA
TA = –55
C
e n – Noise Voltage

10
25
C
–32

–16
125
C VDS = –10 V

0 1
0 1 2 3 4 5 10 100 1k 10 k 100 k

Switching Time Test Circuit

2N5114 2N5115 2N5116 VGG –VDD

VDD –10 V –6 V –6 V
VGG 20 V 12 V 8V 1.2 kW RL
RL* 430 W 910 W 2 kW
VGS(H)
RG* 100 W 220 W 390 W
ID(on) –15 mA –7 mA –3 mA 0.1 mF RG
VGS(L)
VGS(H) 0V 0V 0V
7.5 kW
VGS(L) –11 V –7 V –5 V
*Non-inductive 51 W 1.2 kW
Input Pulse Sampling Scope
Sampling
Rise Time < 1 ns Rise Time 0.4 ns Scope
Fall Time < 1 ns Input Resistance 10 MW 51 W
51 W
Pulse Width 100 ns Input Capacitance 1.5 pF
PRF 1 MHz
See Typical Characteristics curves for changes.

Siliconix 5
P-37410—Rev. D, 04-Jul-94