TGA2597

2-6 GHz GaN Driver Amplifier

Applications
• Commercial and Military Radar
• Communications
• Electronic Warfare (EW)

Product Features Functional Block Diagram

• Frequency Range: 2-6 GHz
• Output Power: > 31.5 dBm (PIN = 18 dBm) 2 3
• PAE: > 31 % (PIN = 18 dBm)
• Large Signal Gain: > 13.5 dB (PIN = 18 dBm)
• Small Signal Gain: > 24 dB
• VD = 25 V, IDQ = 40 mA, VG = -2.5 V typ. J1 1 4 J2
RF In RF Out
• Chip Dimensions: 2.140 mm x 1.500 mm x 0.10 mm

6 5

General Description Pad Configuration

TriQuint's TGA2597 is a driver amplifier fabricated on Pad No. Symbol
TriQuint's TQGaN25 0.25um GaN on SiC production
1 RF In
process. The TGA2597 operates from 2.0 to 6.0 GHz
and provides > 31.5 dBm of output power with > 13.5 2 VD1
dB of large signal gain and > 31 % power-added 3 VD2
efficiency. 4 RF Out
5 VG2
The TGA2597 operates with the same drain bias as
corresponding GaN HPA’s making it an ideal driver 6 VG1
amplifier. It can also function as the output amplifier
in lower power applications. The TGA2597 is
internally matched to 50 ohms, and includes Ordering Information
integrated DC blocks on both RF ports allowing for
simple system integration.
Part ECCN Description
Lead-free and RoHS compliant. 2-6 GHz GaN Driver
TGA2597 EAR99
Amplifier
Evaluation boards are available upon request.

Datasheet: Rev - 10-03-14 - 1 of 14 - Disclaimer: Subject to change without notice

© 2014 TriQuint www.triquint.com
 TGA2597
2-6 GHz GaN Driver Amplifier

Absolute Maximum Ratings Recommended Operating Conditions

Parameter Value Parameter Value
Drain Voltage (VD) 40 V Drain Voltage (VD) 25 V
Gate Voltage Range (VG) -8 to 0 V Drain Current (IDQ) 40 mA
Drain Current w/ RF Drive (ID_DRIVE): Drain Current w/ RF Drive (ID_DRIVE) 250 mA
1st Stage (ID1_DRIVE) 95 mA Gate Voltage (VG), typ. -2.5 V
2nd Stage (ID2_DRIVE) 305 mA Electrical specifications are measured at specified test
Gate Current (IG): conditions. Specifications are not guaranteed over all
operating conditions.
1st Stage (IG1) (+IG1 @ TCH=200 °C) -0.2 / 1.4 mA
2nd Stage (IG2) (+IG2 @ TCH=200 °C) -0.64 / 2.8 mA
Power Dissipation (PDISS) 5.4 W
Input Power, CW, 50 Ω (PIN) 1 24 dBm
Input Power, CW, 3:1 VSWR (PIN) 1 24 dBm
Channel temperature (TCH) 275 °C
Mounting Temperature
320 °C
(30 Seconds maximum)
Storage Temperature -55 to 150 °C
Notes:
1. VD = 25 V, IDQ = 40 mA, TBASE = 85 °C
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress
ratings only, and functional operation of the device at these
conditions is not implied.

Electrical Specifications
Test conditions unless otherwise noted: 25 °C, VD = 25 V, IDQ = 40 mA, VG = -2.5 V typ., die mounted to EVB
Parameter Min Typical Max Units
Operating Frequency Range 2.0 6.0 GHz
Output Power (@ Pin = 18 dBm) > 31.5 dBm
Power Added Efficiency (@ Pin = 18 dBm) > 31 %
Small Signal Gain > 24 dB
Input Return Loss > 15 dB
Output Return Loss >5 dB
IM3 (Pout/Tone ≤ 24 dBm, 10 MHz tone spacing) < -25 dBc
Small Signal Gain Temperature Coefficient -0.050 dB/°C
Output Power Temperature Coefficient -0.001 dB/°C

Datasheet: Rev - 10-03-14 - 2 of 14 - Disclaimer: Subject to change without notice

© 2014 TriQuint www.triquint.com
 TGA2597
2-6 GHz GaN Driver Amplifier

Thermal and Reliability Information

Parameter Test Conditions Value Units
Thermal Resistance (θJC) (1) TPKG = 85°C, VD = 25 V, IDQ = 40 mA, 17.14 ºC/W
Channel Temperature (TCH) ID_DRIVE = 208 mA, PIN = 18 dBm, POUT = 145 °C
Median Lifetime (TM) 32.5 dBm, PDISS = 3.5 W 3.07E09 Hrs
Notes:
1. MMIC soldered to 40 mil thick Cu-Mo carrier plate using 1.5 mil thick AuSn solder. Thermal resistance is determined from
the channel to the back of the carrier plate (fixed 85 °C temp.).

Median Lifetime
Test Conditions: 40 V; Failure Criteria = 10% reduction in ID MAX

Median Lifetime vs. Channel Temperature

1E+18
1E+17
Median Lifetime, TM (Hours)

1E+16
1E+15
1E+14
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
FET13
1E+04
25 50 75 100 125 150 175 200 225 250 275
Channel Temperature, TCH (°C)

Datasheet: Rev - 10-03-14 - 3 of 14 - Disclaimer: Subject to change without notice

© 2014 TriQuint www.triquint.com
 TGA2597
2-6 GHz GaN Driver Amplifier

Typical Performance – Small Signal

Test conditions unless otherwise noted: 25 °C, VD = 25 V, IDQ = 40 mA, VG = -2.5 V typ., die mounted to EVB

Gain vs. Freq. vs. Temp. Input Return Loss vs. Freq. vs. Temp.
40 0
VD = 25 V, IDQ = 40 mA VD = 25 V, IDQ = 40 mA
35
30 -5
- 40 C
25
-10 +25 C
S21 (dB)

20

S11 (dB)
+85 C
15 -15
10
5 -20
- 40 C
0 +25 C
-25
-5 +85 C
-10 -30
1 2 3 4 5 6 7 8 1 2 3 4 5 6 7 8
Frequency (GHz) Frequency (GHz)

Output Return Loss vs. Freq. vs. Temp.

0
VD = 25 V, IDQ = 40 mA
-5

-10
S22 (dB)

-15

-20
- 40 C
-25 +25 C
+85 C
-30
1 2 3 4 5 6 7 8
Frequency (GHz)

Gain vs. Frequency vs. VD Gain vs. Frequency vs. IDQ

30 30
Temp. = 25 °C, IDQ = 40 mA VD = 25 V, Temp. = 25 °C
28 28

26 26
S21 (dB)

S21 (dB)

24 24

22 22

20 20
20 mA
20 V 25 V 28 V
18 18 40 mA
30 V 32 V 80 mA
16 16
1 2 3 4 5 6 7 8 1 2 3 4 5 6 7 8
Frequency (GHz) Frequency (GHz)

Datasheet: Rev - 10-03-14 - 4 of 14 - Disclaimer: Subject to change without notice

© 2014 TriQuint www.triquint.com
 TGA2597
2-6 GHz GaN Driver Amplifier

Typical Performance – Large Signal

Test conditions unless otherwise noted: 25 °C, VD = 25 V, IDQ = 40 mA, VG = -2.5 V typ., die mounted to EVB

Output Power vs. Frequency vs. PIN Power Added Eff.vs. Freq. vs. PIN
36 45
VD = 25 V, IDQ = 40 mA, Temp. = 25 °C VD = 25 V, IDQ = 40 mA, Temp. = 25 °C
34 40
Output Power (dBm)

Power Added Eff. (%)

32 35
30 30
28 25
26 20
24 15
22 10
20 2 dBm 6 dBm 10 dBm 5 2 dBm 6 dBm 10 dBm
14 dBm 18 dBm 14 dBm 18 dBm
18 0
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
Frequency (GHz) Frequency (GHz)

Drain Current vs. Frequency vs. PIN Power Gain vs. Frequency vs. PIN
350 30
VD = 25 V, IDQ = 40 mA, Temp. = 25 °C VD = 25 V, IDQ = 40 mA, Temp. = 25 °C
300
25
Power Gain (dB)
Drain Current (mA)

250

200 20

150 15
100
10
50 2 dBm 6 dBm 10 dBm 2 dBm 6 dBm 10 dBm
14 dBm 18 dBm 14 dBm 18 dBm
0 5
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
Frequency (GHz) Frequency (GHz)

Output Power vs. Frequency vs. Temp. Power Added Eff. vs. Freq. vs. Temp.
36 45
VD = 25 V, IDQ = 40 mA, PIN = 18 dBm VD = 25 V, IDQ = 40 mA, PIN = 18 dBm
35 40
Output Power (dBm)

Power Added Eff. (%)

34 35
30
33
25
32
20
31
15
30 10
29 5
- 40 C +25 C +85 C - 40 C +25 C +85 C
28 0
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
Frequency (GHz) Frequency (GHz)

Datasheet: Rev - 10-03-14 - 5 of 14 - Disclaimer: Subject to change without notice

© 2014 TriQuint www.triquint.com
 TGA2597
2-6 GHz GaN Driver Amplifier

Typical Performance – Large Signal

Test conditions unless otherwise noted: 25 °C, VD = 25 V, IDQ = 40 mA, VG = -2.5 V typ., die mounted to EVB

Drain Current vs. Frequency vs. Temp. Power Gain vs. Frequency vs. Temp.
350 25
VD = 25 V, IDQ = 40 mA, PIN = 18 dBm VD = 25 V, IDQ = 40 mA, PIN = 18 dBm
300
20

Power Gain (dB)

Drain Current (mA)

250

200 15

150 10
100
5
50
- 40 C +25 C +85 C - 40 C +25 C +85 C
0 0
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
Frequency (GHz) Frequency (GHz)

Gate Current vs. Frequency vs. Temp.

10
VD = 25 V, IDQ = 40 mA, PIN = 18 dBm
9
8
Gate Current (mA)

7
6
5 - 40 C
4 +25 C
3 +85 C
2
1
0
-1
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
Frequency (GHz)

Output Power vs. Frequency vs. VD Power Added Eff. vs. Frequency vs. VD
36 45
PIN = 18 dBm, IDQ = 40 mA, Temp. = 25 °C PIN = 18 dBm, IDQ = 40 mA, Temp. = 25 °C
35
40
Output Power (dBm)

Power Added Eff. (%)

34
35
33

32 30

31
25
30
20
29
20 V 25 V 28 V 30 V 32 V 20 V 25 V 28 V 30 V 32 V
28 15
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
Frequency (GHz) Frequency (GHz)

Datasheet: Rev - 10-03-14 - 6 of 14 - Disclaimer: Subject to change without notice

© 2014 TriQuint www.triquint.com
 TGA2597
2-6 GHz GaN Driver Amplifier

Typical Performance – Large Signal

Test conditions unless otherwise noted: 25 °C, VD = 25 V, IDQ = 40 mA, VG = -2.5 V typ., die mounted to EVB

Output Power vs. Input Power vs. Temp. PAE vs. Input Power vs. Temp.
36 50
VD = 25 V, IDQ = 40 mA, Freq. = 2.0 GHz VD = 25 V, IDQ = 40 mA, Freq. = 2.0 GHz
34 45
40
Output Power (dBm)

32
35
30

PAE (%)
30
28
25
26
20
24
15
22 10
20 5
- 40 C +25 C +85 C - 40 C +25 C +85 C
18 0
0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20
Input Power (dBm) Input Power (dBm)

Power Gain vs. Input Power vs. Temp. Output Power vs. Input Power vs. Temp.
35 36
VD = 25 V, IDQ = 40 mA, Freq. = 2.0 GHz VD = 25 V, IDQ = 40 mA, Freq. = 4.0 GHz
34
30
Power Gain (dB)

Output Power (dBm)

32
25
30
20 28

15 26
24
10
22
5
20
- 40 C +25 C +85 C - 40 C +25 C +85 C
0 18
0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20
Input Power (dBm) Input Power (dBm)

PAE vs. Input Power vs. Temp. Power Gain vs. Input Power vs. Temp.
50 35
VD = 25 V, IDQ = 40 mA, Freq. = 4.0 GHz VD = 25 V, IDQ = 40 mA, Freq. = 4.0 GHz
45
30
40
Power Gain (dB)

35 25
PAE (%)

30 20
25
20 15

15 10
10
5
5 - 40 C +25 C +85 C - 40 C +25 C +85 C
0 0
0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20
Input Power (dBm) Input Power (dBm)

Datasheet: Rev - 10-03-14 - 7 of 14 - Disclaimer: Subject to change without notice

© 2014 TriQuint www.triquint.com
 TGA2597
2-6 GHz GaN Driver Amplifier

Typical Performance – Large Signal, Harmonics

Test conditions unless otherwise noted: 25 °C, VD = 25 V, IDQ = 40 mA, VG = -2.5 V typ., die mounted to EVB

Output Power vs. Input Power vs. Temp. PAE vs. Input Power vs. Temp.
36 50
VD = 25 V, IDQ = 40 mA, Freq. = 6.0 GHz VD = 25 V, IDQ = 40 mA, Freq. = 6.0 GHz
34 45
40
Output Power (dBm)

32
35
30

PAE (%)
30
28
25
26
20
24
15
22 10
20 5
- 40 C +25 C +85 C - 40 C +25 C +85 C
18 0
0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20
Input Power (dBm) Input Power (dBm)

Power Gain vs. Input Power vs. Temp.

35
VD = 25 V, IDQ = 40 mA, Freq. = 6.0 GHz
30
Power Gain (dB)

25

20

15

10

5
- 40 C +25 C +85 C
0
0 2 4 6 8 10 12 14 16 18 20
Input Power (dBm)

2nd Harmonic vs. POUT vs. Freq. 3rd Harmonic vs. POUT vs. Freq.
0 0
VD = 25 V, IDQ = 40 mA, Temp = VD = 25 V, IDQ = 40 mA, Temp =
-10 25 C -10 25 C
Harmonic Level (dBc)

Harmonic Level (dBc)

-20 -20

-30 -30

-40 -40

-50 -50

-60 2 GHz -60 2 GHz

-70 4 GHz -70 4 GHz
6 GHz 6 GHz
-80 -80
5 10 15 20 25 30 35 5 10 15 20 25 30 35
Output Power (dBm) Output Power (dBm)

Datasheet: Rev - 10-03-14 - 8 of 14 - Disclaimer: Subject to change without notice

© 2014 TriQuint www.triquint.com
 TGA2597
2-6 GHz GaN Driver Amplifier

Typical Performance – Harmonics, Linearity

Test conditions unless otherwise noted: 25 °C, VD = 25 V, IDQ = 40 mA, VG = -2.5 V typ., die mounted to EVB

2nd Harmonic vs. POUT vs. Temp. 3rd Harmonic vs. POUT vs. Temp.
0 0
VD = 25 V, IDQ = 40 mA, F0 = 4.0 GHz VD = 25 V, IDQ = 40 mA, F0 = 4.0 GHz
-10 -10
Harmonic Level (dBc)

Harmonic Level (dBc)

-20 -20

-30 -30

-40 -40

-50 -50

-60 - 40 C -60 - 40 C
-70 +25 C -70 +25 C
+85 C +85 C
-80 -80
5 10 15 20 25 30 35 5 10 15 20 25 30 35
Output Power (dBm) Output Power (dBm)

IM3 vs. Output Power vs. Frequency IM3 vs. Output Power vs. Temperature
0 0
VD = 25 V, IDQ = 40 mA, Temp. = 25 C, 10 MHz Spacing VD = 25 V, IDQ = 40 mA, Freq. = 4.0 GHz, 10 MHz Spacing

-10 -10

-20 -20
IM3 (dBc)
IM3 (dBc)

-30 -30

-40 -40
2 GHz - 40 C
-50 4 GHz -50 +25 C
6 GHz +85 C
-60 -60
2 6 10 14 18 22 26 30 2 6 10 14 18 22 26 30
Output Power per Tone (dBm) Output Power per Tone (dBm)

IM5 vs. Output Power vs. Temperature IM5 vs. Output Power vs. Frequency
0 0
VD = 25 V, IDQ = 40 mA, Freq. = 4.0 GHz, 10 MHz Spacing VD = 25 V, IDQ = 40 mA, Temp. = 25 C, 10 MHz Spacing
-10 -10
-20 -20
-30 -30
IM5 (dBc)

IM5 (dBc)

-40 -40
-50 -50
-60 -60
-70 - 40 C -70 2 GHz
+25 C -80 4 GHz
-80
+85 C 6 GHz
-90 -90
2 6 10 14 18 22 26 30 2 6 10 14 18 22 26 30
Output Power per Tone (dBm) Output Power per Tone (dBm)

Datasheet: Rev - 10-03-14 - 9 of 14 - Disclaimer: Subject to change without notice

© 2014 TriQuint www.triquint.com
 TGA2597
2-6 GHz GaN Driver Amplifier

Application Circuit

C9
Vds = 25 V 0.01 uF C10
0.01 uF

2 3

J1 1 4 J2
RF In RF Out

Vgs = -2.5 V
Typical 6 5 R8
R7 5.1 Ω
5.1 Ω C12
C7 0.01 uF
1.0 uF C11
0.01 uF
C8
1.0 uF

Bias-up Procedure Bias-down Procedure

1. Set ID limit to 400 mA, IG limit to 4.5 mA 1. Turn off RF signal
2. Set VG to -5.0V 2. Set VG to -5.0V. Ensure IDQ ~ 0mA
3. Set VD +25V 3. Set VD to 0V
4. Adjust VG more positive until IDQ = 40 mA. 4. Turn off VD supply
5. Apply RF signal 5. Turn off VG supply

Datasheet: Rev - 10-03-14 - 10 of 14 - Disclaimer: Subject to change without notice

© 2014 TriQuint www.triquint.com
 TGA2597
2-6 GHz GaN Driver Amplifier

Evaluation Board

Bill of Materials
Ref. Designation Value Description Manufacturer Part Number
R7 – R8 5.1 Ohm Res, 0402, 5% ROHS Various
C7 – C8 1.0 uF Cap, 1206, 16V, 20%, X5R Various
C9 – C12 0.01 uF Cap, 0402, 50V, 10%, X7R Various

RF Layer is 0.008” thick Rogers Corp. RO4003C, εr = 3.38. Metal layers are 0.5 oz. copper. The microstrip line at the
connector interface is optimized for the Southwest Microwave end launch connector 1092-01A-5. Die attach is
accomplished with conductive epoxy. The PCB land pattern has been developed to accommodate bond wire and die
tolerances.

Datasheet: Rev - 10-03-14 - 11 of 14 - Disclaimer: Subject to change without notice

© 2014 TriQuint www.triquint.com
 TGA2597
2-6 GHz GaN Driver Amplifier

Mechanical Drawing & Bond Pad Description

Unit: millimeters
Thickness: 0.10
Die x, y size tolerance: +/- 0.050
Chip edge to bond pad dimensions are shown to center of pad
Ground is backside of die

Bond Pad Symbol Description Pad Size (um x um)

1 RF In RF Input; matched to 50 ohms; AC coupled. 100 x 200
2 VD1 Drain voltage, first stage. 100 x 100
3 VD2 Drain voltage, second stage. 100 x 100
4 RF Out RF Output; matched to 50 ohms; AC coupled. 100 x 200
5 VG2 Gate voltage, second stage. 100 x 100
6 VG1 Gate voltage, first stage. 100 x 100

Datasheet: Rev - 10-03-14 - 12 of 14 - Disclaimer: Subject to change without notice

© 2014 TriQuint www.triquint.com
 TGA2597
2-6 GHz GaN Driver Amplifier

Assembly Notes
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment (i.e. epoxy) can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.

Reflow process assembly notes:

• Use AuSn (80/20) solder and limit exposure to temperatures above 300°C to 3-4 minutes, maximum.
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• Do not use any kind of flux.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.

Interconnect process assembly notes:

• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonics are critical parameters.
• Aluminum wire should not be used.
• Devices with small pad sizes should be bonded with 0.0007-inch wire.

Datasheet: Rev - 10-03-14 - 13 of 14 - Disclaimer: Subject to change without notice

© 2014 TriQuint www.triquint.com
 TGA2597
2-6 GHz GaN Driver Amplifier

Product Compliance Information

ESD Sensitivity Ratings Solderability
Use only AuSn (80/20) solder and limit exposure to
Caution! ESD-Sensitive Device temperatures above 300 °C to 3-4 minutes, maximum.

RoHS-Compliance
ESD Rating: TBD
This part is compliant with EU 2002/95/EC RoHS
Value: TBD
directive (Restrictions on the Use of Certain Hazardous
Test: Human Body Model (HBM)
Substances in Electrical and Electronic Equipment).
Standard: JEDEC Standard JESD22-A114

ECCN This product also has the following attributes:

• Lead Free
US Department of Commerce: EAR99 • Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free

Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information
about TriQuint:

Web: www.triquint.com Tel: +1.972.994.8465

Email: info-sales@triquint.com Fax: +1.972.994.8504

For technical questions and application information: Email: info-products@triquint.com

Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein.
The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated
with such information is entirely with the user. All information contained herein is subject to change without notice.
Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The
information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or
anything described by such information.

TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-
sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.

Datasheet: Rev - 10-03-14 - 14 of 14 - Disclaimer: Subject to change without notice

© 2014 TriQuint www.triquint.com