PD - 97587A

IRFML8244TRPbF
HEXFET® Power MOSFET
VDS 25 V
VGS Max ± 20 V * 
RDS(on) max
24 m  '
(@VGS = 10V)
RDS(on) max
41 m 6  Micro3TM (SOT-23)
(@VGS = 4.5V)
IRFML8244TRPbF

Application(s)
Load/ System Switch

Features and Benefits

Features Benefits
Low RDS(on) (  24m) Lower switching losses
Industry-standard pinout Multi-vendor compatibility
Compatible with existing Surface Mount Techniques results in Easier manufacturing
RoHS compliant containing no lead, no bromide and no halogen  Environmentally friendly
MSL1, Consumer qualification Increased reliability

Absolute Maximum Ratings

Symbol Parameter Max. Units
VDS Drain-Source Voltage 25 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 5.8
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 4.6 A
IDM Pulsed Drain Current 24
PD @TA = 25°C Maximum Power Dissipation 1.25
W
PD @TA = 70°C Maximum Power Dissipation 0.80
Linear Derating Factor 0.01 W/°C
VGS Gate-to-Source Voltage ± 20 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance
Symbol Parameter Typ. Max. Units
RJA Junction-to-Ambient e ––– 100
°C/W
RJA Junction-to-Ambient (t<10s) f ––– 99

ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.

Notes  through „ are on page 10

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IRFML8244TRPbF

Electric Characteristics @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 25 ––– ––– V VGS = 0V, ID = 250μA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C Reference to 25°C, ID = 1mA
––– 20 24 VGS = 10V, ID = 5.8A d
= 4.6A d
RDS(on) Static Drain-to-Source On-Resistance m
––– 32 41 VGS = 4.5V, ID
VGS(th) Gate Threshold Voltage 1.35 1.7 2.35 V VDS = VGS, ID = 10μA
IDSS ––– ––– 1.0 VDS = 20V, VGS = 0V
Drain-to-Source Leakage Current μA
––– ––– 150 VDS = 20V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
RG Internal Gate Resistance ––– 1.6 ––– 
gfs Forward Transconductance 10 ––– ––– S VDS = 10V, ID = 5.8A
Qg Total Gate Charge ––– 5.4 ––– ID = 5.8A
Qgs Gate-to-Source Charge ––– 1.0 ––– nC VDS =13V
Qgd Gate-to-Drain ("Miller") Charge ––– 0.81 ––– VGS = 10V d
td(on) Turn-On Delay Time ––– 2.7 ––– VDD =13Vd
tr Rise Time ––– 2.1 ––– ID = 1.0A
ns
td(off) Turn-Off Delay Time ––– 9.0 ––– RG = 6.8
tf Fall Time ––– 2.9 ––– VGS = 10V
Ciss Input Capacitance ––– 430 ––– VGS = 0V
Coss Output Capacitance ––– 110 ––– pF VDS = 10V
Crss Reverse Transfer Capacitance ––– 49 ––– ƒ = 1.0MHz

Source - Drain Ratings and Characteristics

Symbol Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D
––– ––– 1.25
(Body Diode) showing the
A G
ISM Pulsed Source Current integral reverse
c ––– ––– 24 S

(Body Diode) p-n junction diode.

VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 5.8A, VGS = 0V d
trr Reverse Recovery Time ––– 11 17 ns TJ = 25°C, VR = 20V, IF=5.8A
Qrr Reverse Recovery Charge ––– 4.2 6.3 nC di/dt = 100A/μs d

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 IRFML8244TRPbF
100 100
VGS VGS
TOP 15V TOP 15V
10V 10V
4.5V 4.5V
ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

4.0V 4.0V
3.8V 3.8V
3.5V 3.5V
10 3.3V 3.3V
BOTTOM 3.0V BOTTOM 3.0V

10

1 3.0V

3.0V
60μs PULSE WIDTH 60μs PULSE WIDTH
Tj = 25°C Tj = 150°C
0.1 1
0.1 1 10 100 0.1 1 10 100
V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 1.6
ID = 5.8A
RDS(on) , Drain-to-Source On Resistance

VGS = 10V
ID, Drain-to-Source Current (A)

1.4

10
1.2
(Normalized)

T J = 150°C

1.0
T J = 25°C
1

0.8
VDS = 15V
60μs PULSE WIDTH
0.1 0.6
2.0 2.5 3.0 3.5 4.0 4.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

vs. Temperature
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IRFML8244TRPbF

10000 14.0
VGS = 0V, f = 1 MHZ
ID= 5.8A
C iss = C gs + C gd, C ds SHORTED
C rss = C gd 12.0

VGS, Gate-to-Source Voltage (V)

C oss = C ds + C gd VDS= 20V
10.0 VDS= 13V
C, Capacitance (pF)

1000
VDS= 5.0V
Ciss 8.0

Coss 6.0
100
Crss 4.0

2.0

10 0.0
1 10 100 0 1 2 3 4 5 6 7 8
VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC)

Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)

100μsec
10 T J = 150°C 10 1msec

10msec

T J = 25°C
1 1

T A = 25°C
Tj = 150°C
VGS = 0V
Single Pulse
0.1 0.1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.10 1.0 10 100
VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage

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 IRFML8244TRPbF

6 RD
V DS

5 VGS
D.U.T.
RG
ID, Drain Current (A)

+
4 - VDD

VGS
3 Pulse Width µs
Duty Factor 

2
Fig 10a. Switching Time Test Circuit
1
VDS
90%
0
25 50 75 100 125 150
T A , Ambient Temperature (°C)

10%
Fig 9. Maximum Drain Current vs. VGS
Ambient Temperature td(on) tr t d(off) tf

Fig 10b. Switching Time Waveforms

1000
Thermal Response ( Z thJA ) °C/W

100
D = 0.50
0.20
10 0.10
0.05
0.02
1 0.01

0.1

Notes:
0.01 SINGLE PULSE 1. Duty Factor D = t1/t2
( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthja + T A
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10
t1 , Rectangular Pulse Duration (sec)

Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient

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 IRFML8244TRPbF

80 50
RDS(on), Drain-to -Source On Resistance (m )

RDS(on), Drain-to -Source On Resistance ( m)

ID = 5.8A
70 45

40
60 Vgs = 4.5V
35
50
30
40 25
T J = 125°C
30 20
Vgs = 10V
15
20
10
10 T J = 25°C
5
0 0
2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 25

VGS, Gate -to -Source Voltage (V) ID, Drain Current (A)

Fig 12. Typical On-Resistance vs. Gate Fig 13. Typical On-Resistance vs. Drain
Voltage Current

Current Regulator
Same Type as D.U.T.

50K
QG
12V .2F
.3F
VGS +
QGS QGD V
D.U.T. - DS

VG VGS

3mA

Charge IG ID
Current Sampling Resistors

Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit
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 IRFML8244TRPbF

2.6 1000

2.4
VGS(th) , Gate threshold Voltage (V)

2.2 800

Single Pulse Power (W)

2.0
600
1.8
ID = 10μA
1.6
ID = 250μA 400
1.4

1.2
200
1.0

0.8 0
-75 -50 -25 0 25 50 75 100 125 150 1E-7 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0
T J , Temperature ( °C ) Time (sec)

Fig 15. Typical Threshold Voltage vs. Fig 16. Typical Power vs. Time
Junction Temperature

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IRFML8244TRPbF
Micro3 (SOT-23) Package Outline
Dimensions are shown in millimeters (inches)
DIMENSIONS
6 A 5
MILLIMETERS INCHES
D SYMBOL
MIN MAX MIN MAX
A 0.89 1.12  
A
A2 C
A1 0.01 0.10 0.0004 
3 E A2 0.88 1.02  
6 E1
0.15 [0.006] M C B A b 0.30 0.50  
1 2
0.10 [0.004] C c 0.08 0.20  
A1
3X b D 2.80 3.04  
e
5 B 0.20 [0.008] M C B A E 2.10 2.64  
NOTES:
e1 E1 1.20 1.40  
e 0.95 BSC  %6&
e1 1.90 BSC  %6&
L 0.40 0.60  
H 4 L1 L1 0.54 REF  REF
Recommended Footprint
L2 0.25 BSC  BSC
c
0.972 0 8 0 8

0.950
2.742
L2 0.802

1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994

3X L 2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: MILLIMETER.
7 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
1.900 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS
OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.

Micro3 (SOT-23/TO-236AB) Part Marking Information

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DATE CODE MARKING INSTRUCTIONS
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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8 www.irf.com
 IRFML8244TRPbF

Micro3Tape & Reel Information

Dimensions are shown in millimeters (inches)

2.05 ( .080 ) 1.6 ( .062 ) 1.32 ( .051 )

1.95 ( .077 ) 1.5 ( .060 )
1.85 ( .072 ) 1.12 ( .045 )
4.1 ( .161 )
3.9 ( .154 ) 1.65 ( .065 )

TR 3.55 ( .139 ) 8.3 ( .326 )

3.45 ( .136 ) 7.9 ( .312 )

FEED DIRECTION 4.1 ( .161 )

3.9 ( .154 ) 1.1 ( .043 ) 0.35 ( .013 )
0.9 ( .036 ) 0.25 ( .010 )

178.00
( 7.008 )
MAX.

9.90 ( .390 )
8.40 ( .331 )

NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

www.irf.com 9
 IRFML8244TRPbF

Orderable part number Package Type Standard Pack Note

Form Quantity
IRFML8244TRPbF Micro3 (SOT-23) Tape and Reel 3000

Qualification information†
Cons umer††
Qualification level †††
(per JE DE C JE S D47F guidelines )
MS L1
Moisture Sensitivity Level Micro3 (SOT-23)
(per IP C/JE DE C J-S TD-020D††† )
RoHS compliant Yes

† Qualification standards can be found at International Rectifier’s web site

http://www.irf.com/product-info/reliability
†† Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.

Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Pulse width  400μs; duty cycle  2%.
ƒ Surface mounted on 1 in square Cu board.
„ Refer to application note #AN-994.

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.02/2012
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