Advance Technical Information

TrenchT4TM IXTN660N04T4 VDSS = 40V

Power MOSFET ID25 = 660A
D
RDS(on)  
0.85m

N-Channel Enhancement Mode G

Avalanche Rated S
Fast Intrinsic Diode S
miniBLOC, SOT-227
E153432

S
Symbol Test Conditions Maximum Ratings
G
VDSS TJ = 25C to 175C 40 V
VDGR TJ = 25C to 175C, RGS = 1M 40 V
VGSM Transient 15 V
S
ID25 TC = 25C (Chip Capability) 660 A
D
IL(RMS) External Lead Current Limit 200 A
IDM TC = 25C, Pulse Width Limited by TJM 1800 A G = Gate D = Drain
S = Source
IA TC = 25C 330 A
EAS TC = 25C 5 J
Either Source Terminal S can be used as
PD TC = 25C 1040 W the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
TJ -55 ... +175 C
TJM 175 C
Tstg -55 ... +175 C
Features
VISOL 50/60 Hz, RMS t = 1 minute 2500 V~
IISOL  1mA t = 1 second 3000 V~ 
International Standard Package

Md Mounting Torque 1.5/13 Nm/lb.in miniBLOC, with Aluminium Nitride
Terminal Connection Torque 1.3/11.5 Nm/lb.in Isolation

175°C Operating Temperature
Weight 30 g 
Isolation Voltage 2500 V~

High Current Handling Capability

Fast Intrinsic Diode

Avalanche Rated

Low RDS(on)

Advantages
Symbol Test Conditions Characteristic Values

(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max. Easy to Mount

Space Savings
BVDSS VGS = 0V, ID = 250μA 40 V 
High Power Density
VGS(th) VDS = VGS, ID = 250μA 2.0 4.0 V
IGSS VGS = 15V, VDS = 0V 200 nA Applications
IDSS VDS = VDSS, VGS = 0V 10 A 
DC-DC Converters and Offi-Line UPS
TJ = 150C 1.5 mA 
Primary-Side Switch
RDS(on) VGS = 10V, ID = 100A, Note 1 0.85 m 
High Speed Power Switching
Applications

© 2016 IXYS CORPORATION, All Rights Reserved DS100728A(7/16)

 IXTN660N04T4
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max. SOT-227B (IXTN) Outline

gfs VDS = 10V, ID = 60A, Note 1 110 180 S

Ciss 44.0 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 6.5 nF
Crss 3.5 nF
RGI Gate Input Resistance 2.5 
td(on) 40 ns
Resistive Switching Times
tr 430 ns
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS
td(off) RG = 1 (External) 386 ns
tf 260 ns (M4 screws (4x) supplied)
Qg(on) 860 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS 240 nC
Qgd 290 nC
RthJC 0.144C/W
RthCS 0.05 C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
IS VGS = 0V 660 A
ISM Repetitive, Pulse Width Limited by TJM 2640 A
VSD IF = 100A, VGS = 0V, Note 1 1.4 V
trr IF = 150A, VGS = 0V 60 ns
IRM 2.1 A
-di/dt = 100A/s
QRM VR = 30V 63 nC

Note 1. Pulse test, t  300s, duty cycle, d  2%.

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
 IXTN660N04T4

Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC

350 1000
VGS = 15V VGS = 15V
10V 8V 10V 9V
300
800

250 8V
7V
I D - Amperes

I D - Amperes
600
200

6.5V
150 7V
400

100
6V
200
50 6V

5V
0 0
0 0.05 0.1 0.15 0.2 0.25 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
VDS - Volts VDS - Volts

Fig. 3. Output Characteristics @ TJ = 150ºC Fig. 4. Normalized RDS(on) vs. Junction Temperature
350 1.6
VGS = 15V
VGS = 10V
10V
300
8V ID > 100A
7V 1.4

250
R DS(on) - Normalized
I D - Amperes

1.2
200
6V

150
1.0

100

5V 0.8
50

0 0.6
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 -50 -25 0 25 50 75 100 125 150 175
VDS - Volts TJ - Degrees Centigrade

Fig. 5. Normalized RDS(on) to ID = 100A

vs. Drain Current Fig. 6. Drain Current vs. Case Temperature
1.8

VGS = 10V 200

15V
1.6
160
RDS(on) - Normalized

TJ = 175ºC
I D - Amperes

1.4
120

1.2
80

TJ = 25ºC
1.0 40

0.8 0
0 50 100 150 200 250 300 350 -50 -25 0 25 50 75 100 125 150 175
I D - Amperes TC - Degrees Centigrade

© 2016 IXYS CORPORATION, All Rights Reserved

 IXTN660N04T4
Fig. 7. Input Admittance Fig. 8. Transconductance
800 800

VDS = 5V TJ = - 40ºC
VDS = 5V
700 700

600 600
25ºC

g f s - Siemens
500 500
I D - Amperes

150ºC
400 400

300 300
TJ = 150ºC
25ºC
- 40ºC
200 200

100 100

0 0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0 100 200 300 400 500 600 700 800
VGS - Volts I D - Amperes

Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge
1000 10

9 VDS = 20V
I D = 330A
800 8
I G = 10mA
7
I S - Amperes

600 6
VGS - Volts

400 4

TJ = 150ºC 3
TJ = 25ºC
200 2

0 0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 100 200 300 400 500 600 700 800 900
VSD - Volts QG - NanoCoulombs

Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area

100 10,000

Ciss RDS(on) Limit

Capacitance - NanoFarads

1,000 100µs
100µs
I D - Amperes

External Lead
10 Coss 100 Current Limit

1ms
10
TJ = 175ºC
Crss
f = 1 MHz TC = 25ºC 10ms
Single Pulse DC
1 1
0 5 10 15 20 25 30 35 40 1 10 100
VDS - Volts VDS - Volts

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
 IXTN660N04T4
Fig. 13. Resistive Turn-on Rise Time Fig. 14. Resistive Turn-on Rise Time
vs. Junction Temperature vs. Drain Current
1400 1200

RG = 1Ω , VGS = 10V RG = 1Ω , VGS = 10V

1200 VDS = 20V VDS = 20V
1000

I D = 660A
t r - Nanoseconds

1000

t r - Nanoseconds
TJ = 150ºC
800

800

TJ = 25ºC
600
600
I D = 330A
400
400

200 200
25 50 75 100 125 150 320 360 400 440 480 520 560 600 640 680
TJ - Degrees Centigrade I D - Amperes

Fig. 15. Resistive Turn-on Switching Times Fig. 16. Resistive Turn-off Switching Times
vs. Gate Resistance vs. Junction Temperature
1800 180 380 560

1600 tr td(on) 160 tf td(off)

360 520
TJ = 150ºC, VGS = 10V RG = 1Ω, VGS = 10V
1400 140
VDS = 20V VDS = 20V
340 480

t d(off) - Nanoseconds
1200 120
t d(on) - Nanoseconds
t r - Nanoseconds

t f - Nanoseconds

1000 100 320 440

I D = 330A
I D = 660A
800 80 300 400
I D = 330A
I D = 660A
600 60
280 360
400 40
260 320
200 20 I D = 330A

0 0 240 280
1 2 3 4 5 6 7 8 9 10 25 50 75 100 125 150
RG - Ohms TJ - Degrees Centigrade

Fig. 17. Resistive Turn-off Switching Times Fig. 18. Resistive Turn-off Switching Times
vs. Drain Current vs. Gate Resistance
440 680 1600 800

tf td(off) 1400 tf td(off) 700

400 RG = 1Ω, VGS = 10V 600 TJ = 150ºC, VGS = 10V
VDS = 20V 1200 VDS = 20V 600
t d(off) - Nanoseconds
t d(off) - Nanoseconds

360 520
t f - Nanoseconds

t f - Nanoseconds

TJ = 150ºC 1000 500

320 440 800 400

I D = 330A
I D = 660A
600 300
280 360
TJ = 25ºC
400 200

240 280
200 100

200 200 0 0
320 360 400 440 480 520 560 600 640 680 1 2 3 4 5 6 7 8 9 10
I D - Amperes RG - Ohms

© 2016 IXYS CORPORATION, All Rights Reserved

 IXTN660N04T4

Fig. 19. Maximum Transient Thermal Impedance

Fig. 19. Maximum Transient Thermal Impedance

aaaa
0.3

0.1
Z (th)JC - K / W

0.01

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS REF: T_660N04T4 (T9-M04)5-16-16

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