BUT12/12A

BUT12/12A

High Voltage Power Switching Applications

1 TO-220

1.Base 2.Collector 3.Emitter

NPN Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage
: BUT12 850 V
: BUT12A 1000 V
VCEO Collector-Emitter Voltage
: BUT12 400 V
: BUT12A 450 V
IC Collector Current (DC) 8 A
ICP *Collector Current (Pulse) 20 A
IB Base Current 4 A
PC Collector Dissipation (TC=25°C) 100 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 175 °C

Electrical Characteristics TC=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) * Collector-Emitter Sustaining Voltage IC = 100mA, L = 25mH 400 V
ICES Collector Cut-off Current VCE = VCES, VBE = 0 1 mA
IEBO Emitter Cut-off Current VBE = 9V, IC = 0 10 mA
VCE(sat) * Collector-Emitter Saturation Voltage IC = 6A, IB = 1.2A 1.5 V
VBE(sat) * Base-Emitter Saturation Voltage IC = 6A, IB = 1.2A 1.5 V
tON Turn On Time VCC = 250V, IC = 6A 1 µs
tSTG Storage Time IB1 = - IB2 = 1.2A 4 µs
RL = 41.6Ω
tF Fall Time 0.8 µs
* Pulsed Test: PW = 300µs, duty cycle = 1.5%

©2001 Fairchild Semiconductor Corporation Rev. A1, August 2001

 BUT12/12A
Package Demensions

TO-220

1.30 ±0.10 9.90 ±0.20 4.50 ±0.20

(8.70)

2.80 ±0.10
(1.70)

+0.10
ø3.60 ±0.10 1.30 –0.05

18.95MAX.
(3.70)

15.90 ±0.20
9.20 ±0.20

(1.46)

(3.00)
(45°
)
(1.00)
13.08 ±0.20

10.08 ±0.30

1.27 ±0.10 1.52 ±0.10

0.80 ±0.10 +0.10

0.50 –0.05 2.40 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]

10.00 ±0.20

Dimensions in Millimeters

©2001 Fairchild Semiconductor Corporation Rev. A1, August 2001

 TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™ FAST® OPTOPLANAR™ STAR*POWER™
Bottomless™ FASTr™ PACMAN™ Stealth™
CoolFET™ FRFET™ POP™ SuperSOT™-3
CROSSVOLT™ GlobalOptoisolator™ Power247™ SuperSOT™-6
DenseTrench™ GTO™ PowerTrench® SuperSOT™-8
DOME™ HiSeC™ QFET™ SyncFET™
EcoSPARK™ ISOPLANAR™ QS™ TruTranslation™
E2CMOS™ LittleFET™ QT Optoelectronics™ TinyLogic™
EnSigna™ MicroFET™ Quiet Series™ UHC™
FACT™ MICROWIRE™ SLIENT SWITCHER® UltraFET®
FACT Quiet Series™ OPTOLOGIC™ SMART START™ VCX™
STAR*POWER is used under license

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2001 Fairchild Semiconductor Corporation Rev. H3