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Latching Current:
The latching Current “ IL “ is the minimum anode current
required to maintain the thyristor in the On state immediately after a
thyristor has been turned on and the gate signal has been removed.
…(3)
► The sum of the two collector currents given by equations (2) and
(3) is equal to the anode current Ia.
…(4)
►
…(5)
Contd.
► …(6)
…(7)
► It is clear from eq. (7), that α1+α2 → 1 causes the thyristor to turn on i.e.
the anode current reaches a high value or the SCR starts conducting.
► Rise Time:
It is the time interval between 10% of on-
state current and 90% of on-state current.
Turn-On Time:
It is the time interval between 10% of
gate current and 90% of on-state anode current.
Switching times
Application of SCR
► Typical applications include :
1) DC motor control.
2) generator field regulation.
3) Variable Frequency Drive (VFD) DC Bus
voltage control.
4) Solid State Relays.
5) lighting system control.
Problems
Q1:
Determine the minimum duration of gate
pulse to turn the SCR On while Latching
current is 300mA, Input voltage 100V ,
R=20ohm, L=1H.
Q2:
Determine the value of Resistor to turn Off
Thyristor while Vs=330V and Holding Current
is 150 mA.
Types of Thyristor
► SiliconControlled Switch (SCS)
► Mosfet controlled thyristor (MCT)
► Gate turn-Off Thyristor (GTO)
► Reverse conducting thyristor (RCT)
► A-symmetrical Thyristor (ASCR)
SILICON-CONTROLLED
SWITCH
Silicon-Controlled Switch
► It is a four-layer pnpn device
► Its basic construction is the same with the SCR with the
addition of the second gate terminal.
► Terminals are
Anode, cathode, Anode gate Ga, and Cathode gate Gk.
ANODE ANODE
P ANODE
N ANODE GATE
P GATE
N
CATHODE
CATHODE
GATE
GATE CATHODE
CATHODE
A.) SCS BASIC B.) SCS GRAPHIC
CONSTRUCTION SYMBOL
Switching of SCS
► Turn on switching of the SCS is as follows
Anode
Q1
Anode gate
pnp
GA
IC1
Cathode
gate Q2
npn
IGK Cathode
Operation
(To turn on the device, a negative pulse must
be applied to the Anode gate terminal, or
you can apply positive pulse on Cathode
gate terminal).
OFF-FET shunts base current away from the higher gain BJT
in the thyristor equivalent circuit and forces it to cut-off.
Cut-off of higher gain BJT then forces low-gain BJT into cut-
off. So that MCT will turn Off.
Gate Turn-off Thyristors GTO
► The GTO is a non latching device
1) DIAC
2) UJT
3) PUT
• .
DIAC
► A relaxation oscillator is an
oscillator in which a capacitor is
charged gradually and then
discharged rapidly.
VC =V p e τ2
Since .(VC =VV ) & (τ2 = (( rB1 + R1 )C )
−t 2
( rB 1 +R1 ) C
VV =V p e
−t 2
( rB 1 +R1 ) C VV
e =
VP
−t 2 VV
= log( )
( rB1 + R1 )C VP
Contd.
−t 2 VV
= log( )
( rB1 + R1 )C VP
Vp
t 2 = ( rB1 + R1 )C
log(
→(C )
VV
T = (t1 +t 2 )
1
f =
T
Programmable Unijunction
Transistor PUT
R2
VP =( )VS
R1 +R2
► Intrinsic standoff ratio is
► Period VP
of Oscillation R2
η= =( )
VS R1 +R2
1 Vs R2
T = = RC ln( ) = RC ln(1 + )
f Vs − V p R1
PUT Characteristics Curve
PUT as Relaxation Oscillator
Advantages over UJT
► RG1V can control the frequency of oscillation with a
constant charging rate.