You are on page 1of 8

FDA59N25 250V N-Channel MOSFET

September 2005
TM
UniFET
FDA59N25 VDS = 250V
VDS(Avalanche) = 300V
250V N-Channel MOSFET RDS(on) Typ. @10V = 41mΩ

Features Description
• 59A, 250V, RDS(on) = 0.049Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
• Low gate charge (typical 63 nC)
DMOS technology.
• Low Crss (typical 70 pF)
This advanced technology has been especially tailored to mini-
• Fast switching mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
• 100% avalanche tested
commutation mode. These devices are well suited for high effi-
• Improved dv/dt capability cient switched mode power supplies and active power factor
correction.

D
{

 
G{ z
z

TO-3P {
G DS FDA Series S

Absolute Maximum Ratings


Symbol Parameter FDA59N25 Unit
VDSS Drain-Source Voltage 250 V
VDS(Avalanche) Repetitive Avalanche Voltage (Note 1, 2) 300 V
ID Drain Current - Continuous (TC = 25°C) 59 A
- Continuous (TC = 100°C) 35 A
IDM Drain Current - Pulsed (Note 1) 236 A
VGSS Gate-Source voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 1458 mJ
IAR Avalanche Current (Note 1) 59 A
EAR Repetitive Avalanche Energy (Note 1) 39.2 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C) 392 W
- Derate above 25°C 3.2 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TL Maximum Lead Temperature for Soldering Purpose,
300 °C
1/8” from Case for 5 Seconds

Thermal Characteristics
Symbol Parameter Min. Max. Unit
RθJC Thermal Resistance, Junction-to-Case -- 0.32 °C/W
RθCS Thermal Resistance, Case-to-Sink 0.24 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W

©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com


FDA59N25 Rev. A
FDA59N25 250V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDA59N25 FDA59N25 TO-3P -- -- 30

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Conditions Min. Typ. Max Units


Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 250 -- -- V
∆BVDSS Breakdown Voltage Temperature
ID = 250µA, Referenced to 25°C -- 0.25 -- V/°C
/ ∆TJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V -- -- 1 µA
VDS = 200V, TC = 125°C -- -- 10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 3.0 -- 5.0 V
RDS(on) Static Drain-Source
VGS = 10V, ID = 29.5A -- 0.041 0.049 Ω
On-Resistance
gFS Forward Transconductance VDS = 40V, ID = 29.5A (Note 4) -- 45 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25V, VGS = 0V, -- 3090 4020 pF
Coss f = 1.0MHz
Output Capacitance -- 630 820 pF
Crss Reverse Transfer Capacitance -- 70 110 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 125V, ID = 59A -- 70 150 ns
RG = 25Ω
tr Turn-On Rise Time -- 480 970 ns
td(off) Turn-Off Delay Time -- 90 190 ns
(Note 4, 5)
tf Turn-Off Fall Time -- 170 350 ns
Qg Total Gate Charge VDS = 200V, ID = 59A -- 63 82 nC
Qgs Gate-Source Charge VGS = 10V -- 18.5 -- nC
Qgd Gate-Drain Charge (Note 4, 5) -- 30 -- nC

Drain-Source Diode Characteristics and Maximum Ratings


IS Maximum Continuous Drain-Source Diode Forward Current -- -- 59 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 236 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 59A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0V, IS = 59A -- 190 -- ns
dIF/dt =100A/µs (Note 4)
Qrr Reverse Recovery Charge -- 4.4 -- µC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.67mH, IAS = 59A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 59A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics

2 www.fairchildsemi.com
FDA59N25 Rev. A
FDA59N25 250V N-Channel MOSFET
Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

VGS
Top : 15.0 V
2 10.0 V
10
8.0 V 2
10
7.0 V
6.5 V
Bottom : 6.0 V
ID, Drain Current [A]

ID, Drain Current [A]


150°C

10
1 25°C
1
10

-55°C

* Notes :
* Notes : 1. VDS = 40V
1. 250µs Pulse Test
2. 250µs Pulse Test
0 2. TC = 25°C
10
0
-1 0 1
10
10 10 10 2 4 6 8 10 12

VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage


Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue

0.15

2
10
Drain-Source On-Resistance

IDR, Reverse Drain Current [A]

0.12
RDS(ON) [Ω],

0.09 VGS = 10V

1
0.06
10 150°C
25°C
VGS = 20V

0.03 * Notes :
1. VGS = 0V
* Note : TJ = 25°C 2. 250µs Pulse Test
0
0.00 10
0 25 50 75 100 125 150 175 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

ID, Drain Current [A] VSD, Source-Drain voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

12
8000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd VDS = 50V
10
Crss = Cgd
VGS, Gate-Source Voltage [V]

VDS = 125V
6000 VDS = 200V
8
Coss
Capacitances [pF]

Ciss
6
4000

4
* Note ;
2000 1. VGS = 0 V
Crss 2. f = 1 MHz 2

* Note : ID = 59A

0 0
-1 0 1
10 10 10 0 10 20 30 40 50 60 70

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

3 www.fairchildsemi.com
FDA59N25 Rev. A
FDA59N25 250V N-Channel MOSFET
Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation


vs. Temperature vs. Temperature

1.2 3.0
Drain-Source Breakdown Voltage

2.5

Drain-Source On-Resistance
BVDSS, (Normalized)

1.1

RDS(ON), (Normalized)
2.0

1.0 1.5

1.0

0.9 * Notes :
1. VGS = 0 V * Notes :
2. ID = 250µA 0.5 1. VGS = 10 V
2. ID = 29.5 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200

TJ, Junction Temperature [°C] TJ, Junction Temperature [°C]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature

3
10 70

10 µs
60
10
2
100 µs
1 ms
ID, Drain Current [A]

50
ID, Drain Current [A]

10 ms
1 100 ms
10
DC 40
Operation in This Area
is Limited by R DS(on)
10
0 30

* Notes :
1. TC = 25°C 20
-1
10 2. TJ = 150°C
3. Single Pulse 10

-2
10 0
0 1 2
10 10 10 25 50 75 100 125 150

VDS, Drain-Source Voltage [V] TC, Case Temperature [°C]

Figure 11. Transient Thermal Response Curve

D = 0.5
ZθJC(t), Thermal Response

-1
10
0.2

0.1
* N otes :
1. Z θ JC (t) = 0.32 ° C /W M ax.
0.05 2. D u ty F actor, D =t 1 /t 2

0.02 3. T JM - T C = P D M * Z θ JC (t)
-2
10 0.01
PDM
single pulse
t1
t2
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , S q u are W ave P ulse D uration [se c]

4 www.fairchildsemi.com
FDA59N25 Rev. A
FDA59N25 250V N-Channel MOSFET
Gate Charge Test Circuit & Waveform

VGS
Same Type
50KΩ
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

RL VDS
VDS 90%

VGS VDD
RG

10%
VGS
10V DUT
td(on) tr td(off)
tf
t on t off

Unclamped Inductive Switching Test Circuit & Waveforms

L BVDSS
1
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)

10V DUT VDD VDS (t)


tp
tp Time

5 www.fairchildsemi.com
FDA59N25 Rev. A
FDA59N25 250V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG


• ISD controlled by pulse period

Gate Pulse Width


VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current


I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current


VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

6 www.fairchildsemi.com
FDA59N25 Rev. A
FDA59N25 250V N-Channel MOSFET
Mechanical Dimensions

TO-3P
15.60 ±0.20
4.80 ±0.20
13.60 ±0.20

3.80 ±0.20
ø3.20 ±0.10 +0.15
9.60 ±0.20 1.50 –0.05

18.70 ±0.20
12.76 ±0.20

19.90 ±0.20

23.40 ±0.20
13.90 ±0.20

2.00 ±0.20
3.50 ±0.20

3.00 ±0.20
16.50 ±0.30

1.00 ±0.20 1.40 ±0.20

+0.15
0.60 –0.05
5.45TYP 5.45TYP
[5.45 ±0.30] [5.45 ±0.30]

Dimensions in Millimeters

7 www.fairchildsemi.com
FDA59N25 Rev. A
FDA59N25 250V N-Channel MOSFET
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
ACEx™ FAST® ISOPLANAR™ PowerSaver™ SuperSOT™-8
ActiveArray™ FASTr™ LittleFET™ PowerTrench® SyncFET™
Bottomless™ FPS™ MICROCOUPLER™ QFET® TinyLogic®
Build it Now™ FRFET™ MicroFET™ QS™ TINYOPTO™
CoolFET™ GlobalOptoisolator™ MicroPak™ QT Optoelectronics™ TruTranslation™
CROSSVOLT™ GTO™ MICROWIRE™ Quiet Series™ UHC™
DOME™ HiSeC™ MSX™ RapidConfigure™ UltraFET®
EcoSPARK™ I2C™ MSXPro™ RapidConnect™ UniFET™
E2CMOS™ i-Lo™ OCX™ µSerDes™ VCX™
EnSigna™ ImpliedDisconnect™ OCXPro™ SILENT SWITCHER® Wire™
FACT™ IntelliMAX™ OPTOLOGIC® SMART START™
FACT Quiet Series™ OPTOPLANAR™ SPM™
PACMAN™ Stealth™
Across the board. Around the world.™
POP™ SuperFET™
The Power Franchise®
Power247™ SuperSOT™-3
Programmable Active Droop™
PowerEdge™ SuperSOT™-6

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein: 2. A critical component is any component of a life support device
1. Life support devices or systems are devices or systems which, or system whose failure to perform can be reasonably expected
(a) are intended for surgical implant into the body, or (b) support to cause the failure of the life support device or system, or to
or sustain life, or (c) whose failure to perform when properly used affect its safety or effectiveness.
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS


Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and


supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product


that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I16

8 www.fairchildsemi.com
FDA59N25 Rev. A