FQA13N50CF 500V N-Channel MOSFET

TM
FRFET
FQA13N50CF
500V N-Channel MOSFET
Features Description
• 15A, 500V, RDS(on) = 0.48Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
• Low gate charge (typical 43 nC)
DMOS technology.
• Low Crss (typical 20pF)
This advanced technology has been especially tailored to mini-
• Fast switching mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
• 100% avalanche tested
commutation mode. These devices are well suited for high effi-
• Improved dv/dt capability ciency switched mode power supplies, active power factor cor-
rection, electronic lamp ballasts based on half bridge topology.
• Fast recovery body diode (typical 100ns)

D
!

"

! "
G! "
"

TO-3P
FQA Series !
G D S S

Absolute Maximum Ratings

Symbol Parameter FQA13N50CF Units
VDSS Drain-Source Voltage 500 V
ID Drain Current - Continuous (TC = 25°C) 15 A
- Continuous (TC = 100°C) 9.5 A
IDM Drain Current - Pulsed (Note 1) 60 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 860 mJ
IAR Avalanche Current (Note 1) 15 A
EAR Repetitive Avalanche Energy (Note 1) 21.8 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C) 218 W
- Derate above 25°C 1.56 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TL Maximum lead temperature for soldering purposes, 300 °C
1/8" from case for 5 seconds

Thermal Characteristics
Symbol Parameter Typ Max Units
RθJC Thermal Resistance, Junction-to-Case -- 0.58 °C/W
RθJS Thermal Resistance, Case-to-Sink Typ. 0.24 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W

©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FQA13N50CF Rev. A
 FQA13N50CF 500V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FQA13N50CF FQA13N50CF TO-3P

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 500 -- -- V
∆BVDSS/ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.5 -- V/°C
∆TJ
IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- -- 1 µA
VDS = 400 V, TC = 125°C -- -- 10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V
RDS(on) Static Drain-Source VGS = 10 V, ID = 7.5 A -- 0.43 0.48 Ω
On-Resistance
gFS Forward Transconductance VDS = 40 V, ID = 7.5 A (Note 4) -- 15 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 1580 2055 pF
f = 1.0 MHz
Coss Output Capacitance -- 180 235 pF
Crss Reverse Transfer Capacitance -- 20 25 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 250 V, ID = 15 A, -- 25 60 ns
tr Turn-On Rise Time RG = 25 Ω -- 100 210 ns
td(off) Turn-Off Delay Time -- 130 270 ns
tf Turn-Off Fall Time (Note 4, 5) -- 100 210 ns
Qg Total Gate Charge VDS = 400 V, ID = 15 A, -- 43 56 nC
Qgs VGS = 10 V
Gate-Source Charge -- 7.5 -- nC
Qgd Gate-Drain Charge (Note 4, 5) -- 18.5 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current -- -- 15 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 60 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 15 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 15 A, -- 100 -- ns
dIF / dt = 100 A/µs (Note 4)
Qrr Reverse Recovery Charge -- 2.1 -- µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.6mH, IAS = 15A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 15A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature

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FQA13N50CF Rev. A
 FQA13N50CF 500V N-Channel MOSFET
Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

VGS
Top : 15.0 V
10.0 V
8.0 V
1
7.0 V 1
10 6.0 V 10
150°C

ID, Drain Current [A]

ID, Drain Current [A]

5.5 V
5.0 V
Bottom : 4.5 V
-55°C
25°C

0 0
10 10

Notes :
1. 250탎 Pulse Test Notes :
2. TC = 25°C 1. VDS = 40V
2. 250µs Pulse Test
-1
10
-1 10
-1 0 1 2 4 6 8 10
10 10 10

VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue

1.5
Drain-Source On-Resistance

IDR, Reverse Drain Current [A]

1
10
VGS = 10V
RDS(ON) [Ω],

1.0

0
10

VGS = 20V
150°C
0.5 Notes :
25°C 1. VGS = 0V
Note : TJ = 25°C
2. 250µs Pulse Test
-1
10
0 5 10 15 20 25 30 35 0.2 0.4 0.6 0.8 1.0 1.2 1.4
ID, Drain Current [A] VSD, Source-Drain voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

12
3000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd VDS = 100V
Crss = Cgd 10
2500 VDS = 250V
VGS, Gate-Source Voltage [V]

Ciss
VDS = 400V
2000 8
Capacitance [pF]

Coss
1500 6

1000 Notes ; 4
1. VGS = 0 V
Crss 2. f = 1 MHz

500 2

Note : ID = 15A
0
-1 0 1 0
10 10 10
0 10 20 30 40 50
VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

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FQA13N50CF Rev. A
 FQA13N50CF 500V N-Channel MOSFET
Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

1.2 3.0
Drain-Source Breakdown Voltage

2.5

Drain-Source On-Resistance
1.1
BVDSS, (Normalized)

RDS(ON), (Normalized)
2.0

1.0 1.5

1.0

0.9 Notes :
1. VGS = 0 V Notes :
0.5
2. ID = 250 µA 1. VGS = 10 V
2. ID = 7.5 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200

TJ, Junction Temperature [°C] TJ, Junction Temperature [°C]

Figure 9-1. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature

16
Operation in This Area
2 is Limited by R DS(on)
10 14

10 µs
12
ID, Drain Current [A]

100 µs
ID, Drain Current [A]

1
1 ms 10
10
10 ms
100 ms 8
DC
6
0
10
Notes : 4
1. TC = 25°C
2. TJ = 150°C
2
3. Single Pulse
-1
10 0
0 1 2 3
10 10 10 10 25 50 75 100 125 150

VDS, Drain-Source Voltage [V] TC, Case Temperature [°C]

Figure 11. Transient Thermal Response Curve

0
10

D = 0 .5
(t), Thermal Response

0 .2 N o te s :
10
-1 1 . Z θ J C ( t) = 0 .5 8 ° C /W M a x .

0 .1 2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
0 .0 5
PDM
0 .0 2
t1
0 .0 1
θJC

t2
s i n g le p u ls e
Z

-2
10

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , S q u a r e W a v e P u ls e D u r a tio n [ s e c ]

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FQA13N50CF Rev. A
 FQA13N50CF 500V N-Channel MOSFET
Gate Charge Test Circuit & Waveform

VGS
Same Type
50KΩ
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

RL VDS
VDS 90%

VGS VDD
RG

10%
VGS
10V DUT
td(on) tr td(off)
tf
t on t off

Unclamped Inductive Switching Test Circuit & Waveforms

L BVDSS
1
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)

10V DUT VDD VDS (t)

tp
tp Time

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FQA13N50CF Rev. A
 FQA13N50CF 500V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

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FQA13N50CF Rev. A
 FQA13N50CF 500V N-Channel MOSFET
Mechanical Dimensions

TO-3P
15.60 ±0.20
4.80 ±0.20
13.60 ±0.20

3.80 ±0.20
ø3.20 ±0.10 +0.15
9.60 ±0.20 1.50 –0.05

18.70 ±0.20
12.76 ±0.20

19.90 ±0.20

23.40 ±0.20
13.90 ±0.20

2.00 ±0.20
3.50 ±0.20

3.00 ±0.20
16.50 ±0.30

1.00 ±0.20 1.40 ±0.20

+0.15
0.60 –0.05
5.45TYP 5.45TYP
[5.45 ±0.30] [5.45 ±0.30]

Dimensions in Millimeters

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FQA13N50CF Rev. A
 FQA13N50CF 500V N-Channel MOSFET
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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I15

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FQA13N50CF Rev. A