KSC5027

KSC5027

High Voltage and High Reliability

• High Speed Switching
• Wide SOA

1 TO-220

1.Base 2.Collector 3.Emitter

NPN Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 1100 V
VCEO Collector-Emitter Voltage 800 V
VEBO Emitter-Base Voltage 7 V
IC Collector Current (DC) 3 A
ICP Collector Current (Pulse) 10 A
IB Base Current 1.5 A
PC Collector Dissipation ( TC=25°C) 50 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C

Electrical Characteristics TC=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC = 1mA, IE = 0 1100 V
BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, RBE =∞ 800 V
BVEBO Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 7 V
VCEX(sus) Collector-Emitter Sustaining Voltage IC = 1.5A, IB1 = -IB2 = 0.3A 800 V
L = 2mH, Clamped
ICBO Collector Cut-off Current VCB = 800V, IE = 0 10 µA
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 10 µA
hFE1 DC Current Gain VCE = 5V, IC = 0.2A 10 40
hFE2 VCE = 5V, IC = 1A 8
VCE(sat) Collector-Emitter Saturation Voltage IC = 1.5A, IB = 0.3A 2 V
VBE(sat) Base-Emitter Saturation Voltage IC = 1.5A, IB = 0.3A 1.5 V
Cob Output Capacitance VCB = 10V, IE = 0, f = 1MHz 60 pF
fT Current Gain Bandwidth Product VCE = 10V, IC = 0.2A 15 MHz
tON Turn ON Time VCC = 400V 0.5 µs
tSTG Storage Time IC = 5IB1 = -2.5IB2 = 2A 3 µs
RL = 200Ω
tF Fall Time 0.3 µs

hFE Classification
Classification N R O
hFE1 10 ~ 20 15 ~ 30 20 ~ 40

©2000 Fairchild Semiconductor International Rev. A, February 2000

 KSC5027
Typical Characteristics

4.0 1000
VCE = 5V
3.6
IC[A], COLLECTOR CURRENT

3.2

hFE, DC CURRENT GAIN

2.8
100
2.4
IB = 250mA
2.0 IB = 200mA
IB = 150mA
1.6
IB = 100mA
IB = 80mA 10
1.2 IB = 60mA
IB = 50mA
0.8
IB = 40mA
IB = 30mA
IB = 20mA
0.4
IB = 10mA
IB = 0
0.0 1
0 1 2 3 4 5 6 7 8 9 10 0.01 0.1 1 10

VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. DC current Gain

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

10 4.0
IC = 5 IB VCE = 5V
3.5
IC[A], COLLECTOR CURRENT

3.0

1 V BE(sat)
2.5

2.0

1.5
0.1 V CE(sat)

1.0

0.5

0.01 0.0
0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2

IC[A], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE

Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage

Collector-Emitter Saturation Voltage

10 100

VCC = 400V
tSTG 5.IB1 = -2.5.IB2 = IC
ICMAX.(Pulse)
10
IC[A], COLLECTOR CURRENT

ICMAX(Continuous)
tON, tSTG, tF [µ s], TIME

10

10
m

1
1m

0µ
s

DC
s

tON 1

tF
0.1
0.1

0.01

0.01 1E-3
0.1 1 10 1 10 100 1000 10000

IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Switching Time Figure 6. Safe Operating Area

©2000 Fairchild Semiconductor International Rev. A, February 2000

 KSC5027
Typical Characteristics (Continued)

100 80
IB2 = -0.3A
70
IC[A], COLLECTOR CURRENT

PC[W], POWER DISSIPATION

10 60

50

1 40

30

0.1 20

10

0.01 0
10 100 1000 10000 0 25 50 75 100 125 150 175

o
VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE

Figure 7. Reverse Bias Operating Area Figure 8. Power Derating

©2000 Fairchild Semiconductor International Rev. A, February 2000

 KSC5027
Package Demensions

TO-220

1.30 ±0.10 9.90 ±0.20 4.50 ±0.20

(8.70)

2.80 ±0.10
(1.70)

+0.10
ø3.60 ±0.10 1.30 –0.05

18.95MAX.
(3.70)

15.90 ±0.20
9.20 ±0.20

(1.46)

(3.00)
(45°
)
(1.00)
13.08 ±0.20

10.08 ±0.30

1.27 ±0.10 1.52 ±0.10

0.80 ±0.10 +0.10

0.50 –0.05 2.40 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]

10.00 ±0.20

Dimensions in Millimeters

©2000 Fairchild Semiconductor International Rev. A, February 2000

 TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™ HiSeC™ SuperSOT™-8

Bottomless™ ISOPLANAR™ SyncFET™
CoolFET™ MICROWIRE™ TinyLogic™
CROSSVOLT™ POP™ UHC™
E2CMOS™ PowerTrench® VCX™
FACT™ QFET™
FACT Quiet Series™ QS™
FAST® Quiet Series™
FASTr™ SuperSOT™-3
GTO™ SuperSOT™-6

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2000 Fairchild Semiconductor International Rev. E