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Phase Shifter Design Tutorial

Introduction

Phase shifters are devices used to adjust transmission phase in a system, they can be fixed
phase digital phase shifters or analogue variable types.

Switched-Line Phase shifter

These phase shifters are similar to their attenuator equivalent where two SPDT switches are
used to switch two line lengths, one of which is X degrees longer in electrical length than the
other. The circuit is shown in Figure 1.

Vcontrol

Line length 2

Line length 1

Figure 1 Switched-line phase shifter. Line length 2 has a longer electrical length than
line length 1 so when switched in line will cause an in-line phase shift ∆φ=β(l2-l1).

Required phase shift ∆φ = β(l 2 − l 1 )

ω 1
Where β = and Vp =
Vp ε eff

Example

Design a switched-line phase shifter with a 22.5 degree phase shift at 4GHz, on a substrate
with a dielectric constant of 9.9.

∆φ 22.5
∆l = 22.5degree s = .2ω = 0.392rad
β 360

c 3x10 8
@ 4GHz , λair = = = 0.075m
f 4x10 9

λair 0.075 2π
λg = = = 0.0238m β =
ε eff 9.9 λg

∆φ λ g .∆φ 0.0238 * 0.392


∴ ∆l = = = = 1.485x10 −3 m = 1.485mm
β 2π 2π

So we design the micro-strip lines such that line length 2 is 1.485mm longer than line length
1.
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However, we have to be careful in our choice of line lengths so that we don’t get lines lengths
of 180 degrees (or multiples of 180 degrees) which, would then form a resonator when
switched out of circuit.

Loaded-Line Phase shifter

For phase shifts of <45 degrees we can make use of loaded-line phase shifters as shown in .

These phase shifters work by adding a shunt reactance to the micro-strip line (in the form of
an inductor or capacitor) causing the incident signal to undergo a phase shift.

(Note in micro-strip the reactive component can be formed by a micro-strip stub).

OR

-jb +jb

Figure 2 Switched-line phase shifter. A shunt susceptance inductive (-jB) or capacitive


(+jB) is switched in across the line causing a phase shift on the incident signal.

Let jb be the normalised susceptanc e (from shunt elemant) ie jb = jB.Zo

⎛b⎞ ⎛ b2 ⎞
∆φ = -tan -1 ⎜ ⎟ and insertion loss of phase shifter will be 10log10 ⎜⎜1 + ⎟ (dB)
⎝ 2⎠ ⎝ 4 ⎟⎠
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Example

Like the previous phase shifter we shall design for a phase shift of 22.5 degrees @4GHz.

Rearrange above b = -2.tan∆φ b = - 0.8285 ie inductive susceptanc e

Normalise back to 50ohms = 0.8285 * 50 = 41.4ohms

XL 41.4
L= = = 1.65nH
2π .f 2π .4x10 9


With a resulting insertion loss of 10log10 ⎜⎜1 +
(− 0.8285 )2 ⎞
⎟ = 0.68dB
4 ⎟
⎝ ⎠

The disadvantage of these phase shifters, are that in order to large values of phase shift, high
values of b are required thus increasing the insertion loss.

45-degree phase shift (b = 2) will incur an insertion loss of 3dB. Also as these phase shifters
rely on reflecting signals their return losses are very poor.

Modified loaded-line Phase shifter

The return losses of loaded-line phase shifters can be greatly improved by having two shunt
susceptances separated by 90 degrees. If these susceptances are switched in or out by Pin
diodes then a switchable phase shifter can be made as below. The equivalent circuit is a
transmission line with phase θe.

90 degree line

+jb
-jb +jb

-jb

Figure 3 Improved switched-line phase shifter using two shunt susceptances and a
quarter-wave length of transmission line. This circuit has very good input/output return
losses.
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Equivalent phase length ϑ e = cos −1 (− b )

Zo
Also, Impedance of circuit Ze =
1- b2

So, b < 1 and ⇒ Ze > Zo

N
L=
ω .B

B
C=
2πf.N

This time we have a 4GHz phase shifter where two switched states give susceptances of
+10Ω and -10Ω, and we wish to know the resulting phase shift and equivalent line
impedance.

b on = 10 / 50 (capacitiv e) = 0.2 &


b off = - 10/50 (inductive ) = - 0.2

∴ cosθ eon = - b on = - 0.2 θ eon ⇒ 101.5 degrees

∴ cosθ eoff = - b off = 0.2 θ offn ⇒ 78.46 degrees

∴ Differenti al phase shift = 101.5 - 78.46 = 23 degrees

Zo 50
Equivalent line impedance = = = 51Ω
1- b2 1 - 0.2 2
N 50
L= = = 9.9nH
ω .B 2π .4x10 9.0.2

B 0.2
C= = = 0.159pF
2πf.N 2π 4 x10 9.50

The ADS simulation shown in Figure 4 shows the switched line attenuator using a 90-degree
micro-strip line designed for 4GHz. For one simulation the inductors are connected resulting
in the plots shown in Figure 6 and the other simulation the capacitors are connected resulting
in the plots shown in Figure 5.
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MSub

MSUB
S-PARAMETERS
MSub1
H=0.625 mm
S_Param
Er=9.6
SP1
Mur=1
Start=3.0 GHz
Cond=1.0E+50
Stop=5.0 GHz
Hu=1.0e+033 mm
Step=4 MHz
T=0 mm
TanD=0
Rough=0 mm

Term Term
Term1 MLIN Term2
Num=1 TL1 Num=2
Z=50 Ohm Subst="MSub1" Z=50 Ohm
W=0.65 mm
L=7.4 mm
C L L C
C1 L1 L2 C2
C=0.159 pF L=9.9 nH L=9.9 nH C=0.159 pF
R= R=

Figure 4 ADS simulation of the improved switched-line phase shifter given in the
example. In this case the inductors have been de-activated to leave the capacitors in
circuit resulting in a phase shift of 101.5 degrees.
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m1
freq=3.996GHz
phase(S(2,1))=-102.295
-70

-80

phase(S(2,1))
-90
m1
-100

-110

-120

-130
3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0

freq, GHz
m2
0.0 -10

-20
-0.1

-30
dB(S(1,1))
dB(S(2,1))

-40
-0.3
-50 m3
-60

-0.5 -70
3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0

freq, GHz freq, GHz


m2 m3
freq=3.996GHz freq=4.000GHz
dB(S(2,1))=-0.006 dB(S(1,1))=-57.989

Figure 5 Improved switched-line phase shifter with capacitors switched in circuit.

m1
freq=3.996GHz
phase(S(2,1))=-79.747
-50

-60
phase(S(2,1))

-70
m1
-80

-90

-100

-110
3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0

freq, GHz
m2
0.0 -10

-20
-0.1

-30
dB(S(1,1))
dB(S(2,1))

m3
-40
-0.3
-50

-60

-0.5 -70
3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0

freq, GHz freq, GHz


m2 m3
freq=3.996GHz freq=4.000GHz
dB(S(2,1))=-0.008 dB(S(1,1))=-40.955

Figure 6 Improved switched-line phase shifter with inductors switched in circuit.


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Reflection Phase shifter


Reflection phase shifters work by having switchable terminations which, create switchable
reflection coefficients. The main type of reflection phase shifter uses switched line lengths
either by using a PIN switch or by a variable reactance (eg varactor) to alter electrical length.
In both cases the signal incurs twice the extra electrical length as the signal is reflected back.

Switched Line reflection phase shifter

The simplest example is to use a 90-degree hybrid (eg Lange or Rat-race) and two PIN
diodes to either short to ground bypassing line length 2 or switched out thus adding line
length 2 and adding a longer path for the signal to travel. The schematic of the circuit is
shown in Figure 7.

90 degree hybrid coupler

Line length 1 Line length 1

Line length 2
∆φ/2
Line length 2
∆φ/2

Figure 7 Reflection phase shifter using two PIN diodes to switch in or out the
additional line lengths 2.

ΓON = e jφ

ΓOFF = e j(φ+ ∆φ )
ie ΓON = e - j(φ+ ∆φ )
*
For best operation ΓON = ΓOFF

Giving : φ = -(φ + ∆φ ) + 2kπ ⇒ 2kπ − ∆φ , where k = 0,1,2,3...

φ
⇒ φ = kπ − ∆
2
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Example

Switched line reflection phase shifter to give 45 degrees phase shift at 8GHz. Lange coupler
length will be ~4mm long.

ΓON = Γo ∠φ1

ΓOFF = Γo ∠φ 2

∆φ = φ 2 − φ1 = 45

*
For best return loss performanc e ΓON = ΓOFF

∆φ ∆φ 45
φ 1 = kπ − If k = 0 then φ1 = − =− = - 22.5 degrees
2 2 2

∆φ = φ 2 − φ1 = 45 ∴ ∆φ + φ = φ 2 = 45 − 22.5 = 22.5 degrees

The ADS simulation for this circuit is shown in

MSub

MSUB
S-PARAMETERS
MSub1
H=0.625 mm
S_Param
Er=9.6
SP1
Mur=1
Start=7.0 GHz MLANG
Cond=1.0E+50
Stop=9.0 GHz Lang1
Hu=1.0e+033 mm
Step=4 MHz Subst="MSub1"
T=0 mm
W=0.05 mm
TanD=0.001
S=0.05 mm
Rough=0 mm
L=3.9 mm

Term Term
Term1 Term2
Num=1 Num=2
Z=50 Ohm Z=50 Ohm
MLIN MLIN
TL1 TL2
Subst="MSub1" Subst="MSub1"
W=0.625 mm W=0.625 mm
L=0.91 mm L=0.91 mm
MLIN MLIN
TL3 TL4
Subst="MSub1" Subst="MSub1"
W=0.625 mm W=0.625 mm
L=0.91 mm L=0.1 mm

Figure 8 ADS simulation of the switched line reflection phase shifter given in the
example. In this case we are simulating the PIN diodes on and shorted to ground by
the two ground points at the end of 22.5 degree micro-strip lines TL1 and TL2. The
resulting simulation of this circuit is shown in Figure 9. The other case is with the
grounds disabled simulating the PINs switched off and the signal having to travel
additionally along TL3 & TL4 (and of course back again). The resulting simulation of
this is shown in
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m1
freq=8.000GHz
phase(S(2,1))=47.133
70

60

phase(S(2,1))
50
m1

40

30

20
7.0 7.2 7.4 7.6 7.8 8.0 8.2 8.4 8.6 8.8 9.0

freq, GHz
m2
-0.02 -20

-0.03 -22 m3
freq=8.004GHz
dB(S(2,1))

dB(S(1,1))
-0.04
dB(S(1,1))=-26.405
m2 -24
freq=7.992GHz
-0.05 dB(S(2,1))=-0.023 m3
-26

-0.06 -28
7.0 7.2 7.4 7.6 7.8 8.0 8.2 8.4 8.6 8.8 9.0 7.0 7.2 7.4 7.6 7.8 8.0 8.2 8.4 8.6 8.8 9.0

freq, GHz freq, GHz

Figure 9 Resulting simulation from the circuit shown in Figure 8 with the diodes
switched on – shorting to ground and effectively switching out TL3 & TL4.

m1
freq=8.000GHz
phase(S(2,1))=-1.628
40

20
phase(S(2,1))

m1
0

-20

-40
7.0 7.2 7.4 7.6 7.8 8.0 8.2 8.4 8.6 8.8 9.0

freq, GHz
-0.04 -18
m2
-0.05
-19 m3
freq=8.004GHz
dB(S(2,1))

dB(S(1,1))

-0.06
dB(S(1,1))=-21.355
m2 -20
-0.07 freq=7.992GHz
dB(S(2,1))=-0.049 -21 m3
-0.08

-0.09 -22
7.0 7.2 7.4 7.6 7.8 8.0 8.2 8.4 8.6 8.8 9.0 7.0 7.2 7.4 7.6 7.8 8.0 8.2 8.4 8.6 8.8 9.0

freq, GHz freq, GHz

Figure 10 Resulting simulation from the circuit shown in Figure 8 with the diodes
switched off (by disabling the grounds at the end of TL1 & TL2) – adding TL3 & TL4
transmission lines.
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As can be seen there is approximately a 45 degree phase shift (the accuracy of this depends
on the Lange coupler dimensions).

Variable reactance reflection phase shifter

This circuit again uses a 90-degree hybrid but instead of switched line lengths variable
reactances are used. A variable reactance is in effect a variable electrical length therefore,
using a variable reactance such as a varactor we can form a variable phase shifter. The
schematic of the variable reactance reflection phase shifter is shown in Figure 11.

90 degree hybrid coupler

Vbias Varctor 1 Vbias


Varctor 2

If you require a negative bias on the


varactor then use another bias circuit here,
and replace DC short circuit with a RF
short circuit eg stub

Figure 11 Variable reactance reflection phase shifter, using varactors as the variable
reactance.

Each varactor is bias via a choke with the same bias. There may be a requirement to use a
varactor reference instead of 0V (caused by the DC ground). In this situation the DC ground is
replaced by a RF short eg a quarter-wave capacitive stub and another bias circuit added.

For example calculate the phase shift of a 4GHz variable reactance reflection phase shifter
using Macom varactors type MA46422.
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The MA46422 has a capacitance range of 0.6pF to 6pF (20V to 0.1V). The electrical length
needs to be calculated for each capacitor value remembering that the phase is doubled due
to the signal reflecting back from the short circuit on the other end of the varactor.

From the Micro-strip tutorial we found the following relationship for a shunt capacitor:-

Capacitor C Micro-strip Zo

= θ

tan θ
ωC =
Zo
⎛ λ op ⎞
Where θ < 90 0 ⎜⎜ 90 0 ⎟

⎝ 4 ⎠

(1) Capacitor set to 6pF (ie Control voltage of 0V)

tanφ
Rearrange ωC =
Zo

( )
φ 6pF = 2 * tan -1 (ω.C.Zo) = 2 * tan -1 2π .4x10 9.6x10 -12.50 = 164 o

(2) Capacitor set to 0.6pF (ie Control voltage of 20V)

( )
φ 0.6pF = 2 * tan -1 (ω.C.Zo ) = 2 * tan -1 2π .4x10 9.0.6x10 -12.50 = 74 o

Therefore, ∆φ = φ 6pF − φ 0.6pF = 164 - 74 = 90 degrees

The ADS simulation in Figure 12 was initially run with the varactors set to 6pF and the
PhaseShift element was then set to give 0 degree phase shift at 4GHz to set a reference. The
simulation was then run again this time with the varactors set to 0.6pF resulting in the plots
shown in Figure 13.
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MSub

MSUB
S-PARAMETERS
MSub1
H=0.625 mm
S_Param
Er=9.6
SP1
Mur=1
Start=3.0 GHz MLANG
Cond=1.0E+50
Stop=5.0 GHz Lang1
Hu=1.0e+033 mm
Step=4 MHz Subst="MSub1"
T=0 mm
W=0.05 mm
TanD=0.001
S=0.05 mm
Rough=0 mm
L=7.8 mm

Term Term
Term1 Term2
Num=1 PhaseShiftSML Num=2
Z=50 Ohm PS1 Z=50 Ohm
Phase=-109.78
ZRef=50. Ohm
C C
C1 C2
C=.6 pF C=.6 pF

Figure 12 Variable reactance reflection phase shifter. The phase shift was set to give
zero phase shift with the varactors set to 6pF (0V) as a reference, then the simulation
was run again this time setting the varactors to 0.6pF (20V). The result of the second
simulation is shown in Figure 13.

140

120
phase(S(2,1))

100 m1
80
m1
60 freq=4.000GHz
phase(S(2,1))=86.568
40
3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0

freq, GHz

Figure 13 Simulation from ADS schematic shown in Figure 12, with capacitors now set
to 0.6pF (from 6pF) to show that maximum phase shift available if using the MaCOM
MA46473 diodes.

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