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1 44 ICTON 2006
1. INTRODUCTION
Sensing systems, optoelectronics, nanotechnology: these vast fields of research are growing together and new
applications characterized by extremely low dimensions and the combination of new materials and technologies
are proposed in various systems such as nanostructures and nanomachines, microreactors, displays, chemical
biochips, telecommunications, human/machine interfaces, miniaturized medical and surgery equipments, sensor
systems. The interest in microsensors [1] is dramatically increased during the last decade of 20th century, due to
the fact that they guarantee a relatively stable price-performance ratio. An ambitious goal of the Research in last
years has been the fabrication of monolithic or integrated chips that can not only sense (with microsensors) but
also actuate (with microactuators), that is, the fabrication of a microsystem that encompasses the information-
processing triptych. In the last years, micro-electro-mechanical (MEMS) and micro-opto-electro-mechanical
systems (MOEMS) technologies have been considerably developed and the expansion of the application fields
can be expected to grow both in terms of academic and commercial interest [2-4]. Before the development of
micromechanical devices, macroscopic-force sensors were used in many instruments. MEMS devices enabled
a completely new approach to many common instruments and the opportunity of miniaturization enables force
sensing to become important in many new applications [5]. In general, miniaturization of the dimensions of
a force sensor imposes a reduction in the force to be detected. Therefore, miniature sensors are generally
required to detect smaller forces than macrosensors. One of the key components of a force sensor is the
displacement transducer that is used to detect the induced deflection. Many transduction mechanics have been
explored: among them it is important to recall piezoresistive [6] magnetomotive [7], tunneling-based transducers
[8] and so on. MOEMS applications include proximity sensors, force transducers, magnetic/electric field sensors
or temperature or strain or pressure or mass flow accelerometers, chemical sensors and so on.
However the possibilities for new sensor concepts have been hardly explored, so the field of sensing
applications is also expanding scientifically. There is a need for other properties in sensors which are not yet
possible in MEMS devices such as fast responsivity, high sensitivity and wireless features. Integrated optics has
been one of the most interesting research fields due to the clear advantages that it has as compared to the
traditional microelectronics: its capability to resist harsh environments, immunity to electromagnetic
interference, safety in explosive media, electrical passivity, measurement without direct contact, good sensitivity
with high dynamic range and low-cost manufacturing. The importance of optical sensors in future sensing
systems has been widely recognized [9-14]. Different configurations of optical sensors are reported in literature,
based on interferometric waveguiding devices, such as Mach Zehnder [15] or Michelson [16] or which exploit
intermodal interference between modes having different polarization [17]. Recently, a pressure and acceleration
sensor based on anti-resonant waveguides in which the displacement of a mass produce a misalignment of three
waveguides has been proposed [18].
The Photonic Crystal (PhC) technology [19-21] can be useful exploited for sensing purpose. It is well known
that a PhC slab, consisting of a two-dimensional periodic index contrast introduced into a high-index guiding
layer, supports in-plane guided modes that are completely confined by the slab without any coupling to external
radiation. In addition to in-plane waveguiding, photonic crystal slabs can also interact with external radiations in
complex and interesting ways [22]. Of particular importance for sensing applications is the possibility to tune
the operating wavelength of a PhC-based device by changing the refractive index of the materials of the PhC.
It has been demonstrated that it is possible to induce changes in the refractive index of material by means of
thermo-optical effect [23], carrier plasma effect [24], electro-optical effect [25]. Moreover, the modulation of
the optical properties of photonic crystals has been obtained by the infiltration of conducting polymers,
photoresponsive organic materials and liquid-crystals [26]. The optical properties of a photonic crystal structure
can be also changed by modifying its geometrical parameters. This can be accomplished if the PhC materials can
be bent, deformed or compressed. In this case the unit cell of the PhC structure and its energy dispersion
diagram are modified and the transmittance and reflectance of the device result to be altered.
The possibility to modify dynamically the geometrical parameters of the PhC structure makes thus possible
the realization of sensitive optical device and thus the 2DPhC technology extremely attractive for the fabrication
of physical sensors.
has been used to analyze the nature of the resonant modes and to evaluate the Q factor of the PhC resonant
cavity. For all simulations, a grid size has been chosen equal to a/20, whereas the temporal step size is
3.178.10-17 s, corresponding to 90% of the Courant limit, and uniaxial perfectly matched layers (UPML) are
used to limit the computational domain. At first, an input pulse having a Gaussian temporal behavior,
characterized by a wide spectrum centered at λ = 1310 nm, is launched towards the photonic crystal in order to
excite the modes supported by the cavity. Then a Gaussian temporal shaped pulse, having smaller spectrum
centered at λ = 1310 nm, is launched onto the structure in order to analyze the field distribution and the
symmetry of each supported resonant mode of the cavity lying in the wavelength range 1300 – 1400 nm.
The PhC pressure sensor under consideration consists of a PhC cavity, realized in a GaAs/AlGaAs
waveguide, shown in Fig. 1a. The starting waveguide is constituted by a 300 nm thick GaAs core grown onto
a substrate of Al0.70GaAs0.30. The modal analysis of the waveguide at the wavelength λ = 1310 nm reveals that
the waveguide is single mode for both TE and TM polarization.
Wavelength [µm]
Fig.1. (a) Sketch of the PhC microcavity pressure sensor; (b) transmission spectrum
of the unperturbed microcavity.
Curva di calibrazione
1335
Monitor value [a.u.]
1330
Spectral position of resonant pick [nm]
1325
1320
1315
1310
1305
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Applied pressure [GPa]
Wavelength [µm]
Figure.2. (a) Transmission spectrum of the resonant cavity in presence of an applied force,
(b) Resonant peak position as a function of the applied pressure.
A triangular lattice of air holes, having period a = 400 nm and radius r = 0.35a is patterned in the
GaAs/Al0.70GaAs0.30 waveguide. The height of the air columns has been fixed, by 3D simulations, equal to
800 nm, value that guarantees a good resolution of the band gap and smaller losses. The PhC exhibits a large
band gap for TM polarization (magnetic field component parallel to air hole axis) between 1150 – 1800 nm
whereas a smaller stop band is observed for TE polarization between 1650 – 1850 nm. Therefore the following
analysis only concerns the TM polarization. An opportunely designed cavity, made by reducing the radius of
the hole in the PhC center till to r = 0.2a and varying the radius of the six surrounding holes from r = 0.35a to
r = 0.325a, is introduced in the regular lattice. The cavity, in absence of applied pressure, shows a localized
mode (see Fig. 1b) resonant at the wavelength λ = 1308 nm.
ICTON 2006 47 Mo.D2.1
To model the pressure action, the change of the dielectric impermeability tensor b of the GaAs and AlGaAs,
accounting for the strain and stress effects acting on the lattice of the PhC, has been evaluated by the following
expression:
∆b = (pE:s – rT . gT): Τ, (1)
where p is the photoelastic fourth-order tensor at constant electric field; s is the fourth-rank elastic compliance
sensor, rT = rS + p: dS is the electrooptic third-rank tensor at constant stress in which rS is the third-order
electrooptic tensor at constant strain u and dS is the third-rank piezoelectric tensor at constant strain; gT is the
third-rank piezoelectric tensor at constant stress, and T is the stress tensor.
By applying a force normal to the plane of photonic crystal, the refractive index change is principally due to
the photoelastic effect.
Fig. 2a shows the localized mode in the microcavity, evaluated when a pressure varying between
0.25 – 5 GPa is applied. The resonant mode changes its spectral position, following a linear law as it can be
noticed in Fig. 2b showing the shift of the resonant peak as a function of the applied force. By considering an
area of application of the force equal to 1 µm2, the numerical simulations indicate that the detectable minimum
force is equal to 0.25 mN.
4. CONCLUSIONS
In this paper, a detailed, even if not exhaustive, state of the art of the sensing applications is reported.
The design of a photonic crystal microcavity, etched in a GaAs/AlGaAs waveguide, for force/pressure
measurements is illustrated. The device is under fabrication.
ACKNOWLEDGMENT
This work was supported by MIUR – PRIN 2005, in the framework of the National research project “Photonic
band gap nanosensors”.
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