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IRF1010E
HEXFET® Power MOSFET
l Advanced Process Technology D
l Ultra Low On-Resistance VDSS = 60V
l Dynamic dv/dt Rating
l 175°C Operating Temperature RDS(on) = 12mΩ
l Fast Switching G
l Fully Avalanche Rated ID = 84A
S
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.75
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62
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IRF1010E
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.064 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 12 mΩ VGS = 10V, ID = 50A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 69 ––– ––– S VDS = 25V, ID = 50A
––– ––– 25 VDS = 60V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 130 ID = 50A
Qgs Gate-to-Source Charge ––– ––– 28 nC VDS = 48V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 44 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 12 ––– VDD = 30V
tr Rise Time ––– 78 ––– ID = 50A
ns
td(off) Turn-Off Delay Time ––– 48 ––– RG = 3.6Ω
tf Fall Time ––– 53 ––– VGS = 10V, See Fig. 10
Between lead, D
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance ––– 7.5 –––
and center of die contact S
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 50A, VGS = 0V
trr Reverse Recovery Time ––– 73 110 ns TJ = 25°C, IF = 50A
Qrr Reverse Recovery Charge ––– 220 330 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature. (See fig. 11)
This is a typical value at device destruction and represents
Starting TJ = 25°C, L = 260µH operation outside rated limits.
RG = 25Ω, IAS = 50A, VGS =10V (See This is a calculated value limited to TJ = 175°C .
Figure Calculated continuous current based on maximum allowable
ISD ≤12)
50A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C junction temperature. Package limitation current is 75A.
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IRF1010E
100
4.5V
10
4.5V
1000 3.0
I D = 84A
R DS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)
2.5
TJ = 25 ° C
2.0
(Normalized)
TJ = 175 ° C
100 1.5
1.0
0.5
V DS = 25V
20µs PULSE WIDTH VGS = 10V
10 0.0
4 5 6 7 8 9 10 11 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C)
6000 20
VGS = 0V, f = 1 MHZ ID = 50A
Ciss = Cgs + Cgd, Cds SHORTED
VDS = 48V
4000 Ciss
12
3000
Coss
8
2000
1000 Crss 4
1000 1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ISD , Reverse Drain Current (A)
100
TJ = 175 ° C
100
100µsec
10
10 1msec
TJ = 25 ° C
1
Tc = 25°C
Tj = 175°C 10msec
V GS = 0 V Single Pulse
0.1 1
0.0 0.6 1.2 1.8 2.4 1 10 100 1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
100 RD
VDS
LIMITED BY PACKAGE
VGS
80 D.U.T.
RG
I D , Drain Current (A)
+
-VDD
60
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
40
1
Thermal Response (Z thJC )
D = 0.50
0.20
0.1 0.10
0.05 P DM
SINGLE PULSE t1
0.02
(THERMAL RESPONSE) t2
0.01
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
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IRF1010E
800
1 5V
ID
RG D .U .T +
- VD D
IA S A
400
2V0GS
V
tp 0 .0 1 Ω
V (B R )D SS
tp
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
50KΩ
12V .2µF
QG .3µF
VGS +
V
D.U.T. - DS
QGS QGD
VGS
VG 3mA
IG ID
Charge Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
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IRF1010E
Peak Diode Recovery dv/dt Test Circuit
+
- +
-
RG • dv/dt controlled by RG +
• ISD controlled by Duty Factor "D" VDD
-
• D.U.T. - Device Under Test
VGS
[VGS=10V ] ***
Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5% [ ISD ]
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Visit us at www.irf.com for sales contact information. 3/01
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