Q1 When transistors are used in digital circuits they usually operate in the:

A.active region
B.breakdown region
C.saturation and cutoff regions
D.linear region

Q2 Three different Q points are shown on a dc load line. The upper Q point represents the:

A.minimum current gain

B.intermediate current gain
C.maximum current gain
D.cutoff point

3.A transistor has a of 250 and a base current, IB, of 20 A. The collector current, IC, equals:

A.500 A
B.5 mA
C.50 mA
D.5 A
4.

A current ratio of IC/IE is usually less than one and is called:

A.beta B.theta
C.alpha D.omega

5.With the positive probe on an NPN base, an ohmmeter reading between the other transistor
terminals should be:

A.open
B.infinite
C.low resistance
D.high resistance
6.

In a C-E configuration, an emitter resistor is used for:

A.stabilization
B.ac signal bypass
C.collector bias
D.higher gain
7.

Voltage-divider bias provides:

A.an unstable Q point
B.a stable Q point
C.a Q point that easily varies with changes in the transistor's current gain
D.a Q point that is stable and easily varies with changes in the transistor’s current gain
8.

To operate properly, a transistor's base-emitter junction must be forward biased with reverse bias
applied to which junction?

A.collector-emitter B.base-collector
C.base-emitter D.collector-base
9.

The ends of a load line drawn on a family of curves determine:

A.saturation and cutoff

B.the operating point
C.the power curve
D.the amplification factor
10.

11. If VCC = +18 V, voltage-divider resistor R1 is 4.7 k , and R2 is 1500 , what is the base bias
voltage?

A.8.70 V
B.4.35 V
C.2.90 V
D.0.7 V
12.

The C-B configuration is used to provide which type of gain?

A.voltage B.current
C.resistance D.power
13.

The Q point on a load line may be used to determine:

A.VC B.VCC
C.VB D.IC
14.

A transistor may be used as a switching device or as a:

A.fixed resistor
B.tuning device
C.rectifier
D.variable resistor
15.

Which is beta's current ratio?

A.IC/IB B.IC/IE
C.IB/IE D.IE/IB
16.

A collector characteristic curve is a graph showing:

emitter current (IE) versus collector-emitter voltage (VCE) with (VBB) base bias voltage held
A.
constant
collector current (IC) versus collector-emitter voltage (VCE) with (VBB) base bias voltage held
B.
constant
collector current (IC) versus collector-emitter voltage (VC) with (VBB) base bias voltage held
C.
constant
collector current (IC) versus collector-emitter voltage (VCC) with (VBB) base bias voltage held
D.
constant
17..

With a PNP circuit, the most positive voltage is probably:

A.ground B.VC
C.VBE D.VCC

18..

Which of the following configurations has the lowest output impedance?

A.Fixed-bias
B.Voltage-divider
C.Emitter-follower
D.None of the above

The C-B configuration is used to provide which type of gain?

A.voltage B.current
C.resistance D.power
Which is beta's current ratio?

A.IC/IB B.IC/IE
C.IB/IE D.IE/IB

When a silicon diode is forward biased, what is VBE for a C-E configuration?

A.voltage-divider bias
B.0.4 V
C.0.7 V
D.emitter voltage

With a PNP circuit, the most positive voltage is probably:

A.ground B.VC
C.VBE D.VCC

In a transistor, collector current is controlled by:

A.collector voltage
B.base current
C.collector resistance
D.all of the above

A JFET

A.is a current-controlled device

B.has a low input resistance
C.is a voltage-controlled device
D.is always forward-bias

The Enhance-mode MOSFET

A.can operate with only positive gate voltages

B.can operate with only negative gate voltages
C.cannot operate in the ohmic region
D.can operate with positive as well as negative gate voltages

Intrinsic semiconductor material is characterized by a valence shell of how many electrons?

A.1 B.2
C.4 D.6
What causes the depletion region?

A.doping
B.diffusion
C.barrier potential
D.ions

For normal operation of a pnp BJT, the base must be ________ with respect to the emitter and
________ with respect to the collector.

A.positive, negative
B.positive, positive
C.negative, positive
D.negative, negative

When a transistor is used as a switch, it is stable in which two distinct regions?

A.saturation and active

B.active and cutoff
C.saturation and cutoff
D.none of the above

The term BJT is short for

A.base junction transistor.

B.binary junction transistor.
C.both junction transistor.
D.bipolar junction transistor.

What are the two types of bipolar junction transistors?

A.npn and pnp

B.pnn and nnp
C.ppn and nnp
D.pts and stp

What is the ratio of IC to IE?

A. DC
B. DC /( DC + 1)
C. DC
D.either DC /( DC + 1) or , but not
DC DC

Which of the following is true for an npn or pnp transistor?

A.IE = IB + IC
B.IB = IC+ IE
C.IC = IB + IE
D.none of the above

What is the order of doping, from heavily to lightly doped, for each region?

A.base, collector, emitter

B.emitter, collector, base
C.emitter, base, collector
D.collector, emitter, base

The SCR can be triggered on by a pulse at the

A.gate.
B.anode.
C.cathode.
D.none of the above

How many terminals does a silicon-controlled Rectifier (SCR) device have?

A.2 B.3
C.4 D.5

Which of the following transistors is an SCR composed of?

A.npn, pnp
B.npn, npn
C.pnp, pnp
D.None of the above
An emitter-follower is also known as a

A.common-emitter amplifier.
B.common-base amplifier.
C.common-collector amplifier.
D.Darlington pair.

You have a need to apply an amplifier with a very high power gain. Which of the following
would you choose?

A.common-collector B.common-base
C.common-emitter D.emitter-follower

When the bypass capacitor is removed from a common-emitter amplifier, the voltage gain

A.increases.
B.decreases.
C.has very little effect.
D. No effect

In a common-base amplifier, the input signal is connected to the

A.base. B.collector.
C.emitter. D.output.

The ________ has a physical channel between the drain and source.

A.D-MOSFET B.E-MOSFET
C.V-MOSFET D.[NIL]

Which of the following devices has the highest input resistance?

A.diode
B.JFET
C.MOSFET
D.bipolar junction transistor
The three terminals of the JFET are the ________, ________, and ________.

A.gate, collector, emitter

B.base, collector, emitter
C.gate, drain, source
D.gate, drain, emitter

The BJT is a ________ device. The FET is a ________ device.

A.bipolar, bipolar
B.bipolar, unipolar
C.unipolar, bipolar
D.unipolar, unipolar

At which of the following is the level of VDS equal to the pinch-off voltage?

A.When ID becomes equal to IDSS

B.When VGS is zero volts
C.IG is zero
D.All of the above

Which transistor bias circuit arrangement provides good stability ?

A. Fixed bias
B.Collector-feedback bias
C.Voltage-divider bias
D.Emitter bias

Which transistor bias circuit arrangement has poor stability because its Q-point varies widely
with DC?

A.base bias
B.collector-feedback bias
C.voltage-divider bias
D.emitter bias

At saturation the value of VCE is nearly ________, and IC = ________.

A.zero, zero
B.VCC, IC(sat)
C.zero, I(sat)
D.VCC, zero