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Received 3 December 2005; received in revised form 6 October 2007; accepted 9 December 2007
Available online 3 January 2008
Abstract
This paper presents the fabrication process of a SEPTIC (SEnsing of Phage-Triggered Ion Cascades) chip, consisting of two Ti con-
tact pads and a 150 nm wide Ti nanowell device on LiNbO3 substrate. The patterning was fulfilled by combining electron beam lithog-
raphy, contact photolithography and reactive ion etching. When connected to an external preamplifier and spectrum analyzer, the
nanowell can probe nano-scale electric field fluctuations. The use of this chip as nano-scale electric field probe was demonstrated by
detecting the transitory ion efflux from bacteria being infected by phage. Our experiment showed that the electric field noise follows
1/f 2 power spectrum when the bacteria are sensitive to the phage, whereas 1/f noise corresponds to bacteria resistant to the phage.
The use of fluctuation-enhanced sensing can provide sensitivity orders of magnitude higher than conventional sensing that detects
changes only in the mean value of electrical signals.
Ó 2008 Published by Elsevier B.V.
Keywords: Nanofabrication; Biochip; Nanowell; Lithography; Reactive ion etching; Electric field fluctuation; Power spectrum; Bacteria; Bacteriophage;
Ion efflux
[4,5], etc [6–10]. For practical solid-state biosensors, how- power spectral density (PSD) of 1/f shape. In the case of
ever, several issues need to be considered, such as the lim- sensitive bacteria (infection occurred), much larger voltage
ited sensitivity due to the poor charge variation caused by fluctuations of 1/f 2 shape were observed. No false alarm or
biological processes, non-specific response due to interfer- missed detection was observed. The biological experiment
ing ions or other substances present in the solution, and was described in details in Ref. [14]. The detection limit
the limited stability of the electrochemically active mem- of SEPTIC based on linear response theory was also dis-
brane on the gate of the specific MOSFET [11]. cussed by the authors [26]. This paper is focused on the pat-
In fact, the detection capability of a solid-state sensor terning process of the biochip described in Section 2. The
can be dramatically improved by the aid of fluctuation- experimental configuration, procedures and results are
enhanced sensing (FES) [12]. The interaction between a briefly discussed in Section 3. Final conclusions are pre-
sensing probe and an analyte is always a dynamic stochas- sented in Section 4.
tic process. Micro-fluctuations that result from this interac-
tion carry a ‘‘stochastic fingerprint” of the analyte, and 2. Nanowell structure and fabrication process
contain much more information than the mean value
alone. Thus fluctuation-enhanced sensing can improve sen- The fabrication of the nanowell device includes two
sitivity, selectivity, and reduce false alarm rates by orders lithography processes: first, electron beam lithography
of magnitude over conventional sensor systems that only (EBL) was used to write a gap, 150 nm wide and 60 lm
measure the average values [12]. In the simplest version long; then contact photolithography was used to pattern
of FES, the power spectrum density (PSD) of the detected two large contact pads (5 mm 5 mm) and a bridge
fluctuations is used as the detected signal [13]. (100 lm long, 4 lm wide) connecting the two pads. The
Recently, the authors have developed and demonstrated gap interrupts the bridge and forms a nanowell, 150 nm
a novel sensing technology, named SEPTIC (SEnsing of in width and 4 lm in length. The pads were used for elec-
Phage-Triggered Ion Cascades), which combines the speci- trical connections with external circuitry and the bridge
ficity and fast response of the bacteriophage with the sensi- connected the pads with the nanowell. The top-down view
tivity of the nano-scale fluctuation-enhanced sensing [14]. of the chip is illustrated in Fig. 1, in which the nanowell is
Bacteriophages (‘‘phages”; viruses that specifically detect indicated.
and kill bacteria), have become a focus of interest for diag- Fig. 2 illustrates the fabrication of the nanowell. First,
nosis, therapy and prophylaxis of bacterial disease in 100 nm thick Ti layer was deposited on the surface of lith-
humans, animals, and plants [15–21]. Typically, when a ium niobate (LiNbO3) wafer by DC sputtering system with
phage infects a bacterium, the phage injects its DNA in 3200 V/40 lF under the pressure of 5 10 6 Torr. Next,
the host cell. At the end of the vegetative growth cycle, host 3% PMMA, 950K (MCB), which had molecule weight
lysis occurs and the progeny virions, typically 100–300 par- 950K and diluted with the solvent monochlorobenzene
ticles, are released. Many double-stranded DNA bacterio- made by Brewer Science Inc., was spin coated on the
phages cause massive, transitory ion leakages from host deposited Ti layer. The spinning took 30 s at 2000 rpm, fol-
cells as a consequence of the phage DNA injection process lowed by soft baking for 90 s at 185 °C, which resulted in a
[22,23]. This phenomenon is an ideal opportunity for bac- 200 nm thick PMMA layer. Finally, a 150 nm wide, 60 lm
terial diagnostics, because it not only takes advantage of long trench is written on the PMMA film by EBL and the
the well-known specificity available in bacteriophage but PMMA resist is developed in the mixture of MIB-
it can occur, given sufficient phage concentration, within K:IPA(1:3), for 1 min. The cross-section of the completed
seconds after admixture of the virions and cells [24]. More- wafer is shown in Fig. 2a.
over, it requires no culturing of the analyte culture but only
that the target cells be physiologically viable (i.e. have ener-
gized membranes or intact membranes capable of energiza-
tion) [23]. Nanowell
To detect the ion efflux due to the DNA injection of a 150nm (150nm*4μm)
siphophage or myophage, we constructed a biochip sensor
system, comprising a nanowell for probing electric field
Pad 1 Pad 2
fluctuations, a preamplifier for signal amplification, and a
(5mm*5 (5mm*5
fast Fourier transform (FFT) spectral analyzer for per- mm) mm)
forming the simplest FES. A nanowell device, consisting 4μm
of two metal electrodes with a gap of 5–200 nm in between,
100μm
is capable of probing nano-scale electrical fields and has
been used to study electron transport in molecules. [25]
This chip was exposed to a droplet of the analyte solution
Ti LiNbO3
containing bacteria and phages. When the bacteria were
resistant to the phages (uninfected bacteria), small voltage Fig. 1. Top-down view of the chip with nanowell, contact pads and
fluctuations were observed in the nanowell displaying a bridges connecting between the pads and the nanowell.
1486 S. Seo et al. / Microelectronic Engineering 85 (2008) 1484–1489
a b R.I.E.
PMMA PMMA
Ti (100nm) Ti (100nm)
LiNbO3 LiN bO3
c d R.I.E.
AZ5214
Ti (20nm)
LiNbO3
e f Nanowell
Sensing Area
Pad 1 Nanowell Pad 2
AZ5214
Ti (20nm)
LiNbO 3 LiNbO 3
With PMMA as hard mask, a 150 nm wide, 60 lm long Fig. 3a shows a 200 optical microscope picture of the
trench in the Ti layer was etched anisotropically by reactive fabricated chip with one nanowell device, two contact pads
ion etching (RIE) at the pressure of 2 10 5 Torr with and two connection bridges. The nanowell was hardly vis-
Ar(3 SCCM)/CHF3(30 SCCM)/He(7.5 SCCM) gases. ible. Fig. 3b shows a scanning electron micrograph (SEM)
Since the etching selectivity of Ti to PMMA is only 0.1, of a fabricated nanowell device on silicon substrate, which
two successive RIE steps were employed. First, all the is identical to the nanowell on LiNbO3 substrate. However,
200 nm PMMA film and 20 nm of the unprotected Ti layer the SEM images of the nanowell on LiNbO3 had very poor
were etched, resulting in a thickness of 80 nm in the unpro- contrast, which may be due to the severe charging effect
tected Ti region, and 100 nm in the protected region. In the due to the insulating substrate. When writing the nanowell
second step, 80 nm Ti was etched, so finally 20 nm Ti layer with EBL, the charging effect was not an issue because of
remained in the region originally protected by PMMA. For the 100 nm thick Ti film covering all of the LiNbO3. But
the efficient removal of Ti residue, 10 min sonication clean- when taking SEM of the nanowell, which had only 20 nm
ing process was used after each RIE step. The cross-section thick Ti film covering a small portion of the LiNbO3, the
of the wafer after the RIE is shown in Fig. 2b. charging effect became a severe factor limiting the SEM
Next, the whole chip was cleaned by stripper AZ300T at quality.
95 °C for 15 min. Contact pads were defined by conven- It should be noted that the effective device is a Ti-on-
tional contact photolithography with positive resist LiNbO3 structure. The LiNbO3 substrate, as an insulator,
AZ5214 on a Karl Suss MJB-6 mask aligner. The pads prevents direct current flow through the nanowell. In this
were exposed to an illuminating power of 11.0 mW/cm2 sense, a silicon substrate, although less expensive, cannot
for 5.8 s without filter (Fig. 2c). The resist processing be used. An oxidized Si wafer may be usable, but would
parameters were as follows: spinning 5000 rpm for 30 s, complicate the fabrication process. LiNbO3 substrate does
soft baking 99 °C for 2 min on hot plate. After developing not require a thermal oxidation step, nor any treatment
AZ5214 resist, the Ti layer outside the contact pads was before Ti deposition. Moreover, LiNbO3 has a stronger
etched by RIE (Fig. 2d) using the above protocol and the resistance to the employed RIE than SiO2 does, which pre-
resist layer was stripped by AZ300T at 95 °C for 15 min vents the possible etching into the substrate.
(Fig. 2e). Finally, the whole chip was spin coated with
AZ5214 resist and an 8 6 lm2 window around the nano- 3. Experiment of probing bacteriophage infection-associated
well was opened by photolithography using mask aligner ion efflux
MJB-6. The resist processing parameters are 5000 rpm
and 30 s spinning, 99 °C and 2 min soft baking in hot plate This biochip was used to perform initial experiments
and 135 °C and 12 min hard baking in oven (Fig. 2f). with bacteriophages kS105 (k Dstf, tfa::CamR cI857
S. Seo et al. / Microelectronic Engineering 85 (2008) 1484–1489 1487
Fig. 3. (a) Optical microscope pictures of the fabricated nanowell device and contact pads (200); (b) SEM picture of the nanowell (7720). To improve
image contrast, this nanowell was patterned on silicon substrate. The nanowell used in detecting bacteria/phage was patterned on LiNbO3 substrate.
S105). As kS and kR strains low motility Escherichia coli Fig. 3a. Two probes, providing input to an external voltage
(E. coli) W3110 DfhuF and W3110 DfhuF DlamB were used, amplifier, were firmly pressed on the contact pads. In order
respectively. The experimental details and results are pre- to prevent short circuit between the two pads and reduce
sented in Ref. [14]. The basic experimental protocol was unwanted noise caused by background ions in the solution,
to mix the purified phage stock (about 2 1010 pfu/ml) the surface of the chip, except for the nanowell sensing
with the host cells (mid-log phase cells, washed and resus- area, was covered with resist AZ5214. A 6 lm 8 lm rect-
pended in 5 mM MgSO4), incubate at 37 °C for various angular window was then opened by photolithography.
times and measure the voltage fluctuations in the nanowell. Finally, the resist was hard baked. This way only the
The isogenic host mutant strain (E. coli W3110 DfhuF opened sensing window outlined in Fig. 3a was exposed
DlamB) was used as negative control, for which we did to liquid during experiment. Fig. 4 shows the schematic
not anticipate injection leakage of ions. representation of the experimental apparatus. The voltage
During the experiment, a 5 ll droplet of the analyte fluctuations induced on the nanowell device by the electri-
containing bacteria and bacteriophage was placed in and cal field was amplified by a low-noise preamplifier SR560
around the nanowell, as indicated by the dotted circle in with high input impedance (100 MX) and fed into signal
1488 S. Seo et al. / Microelectronic Engineering 85 (2008) 1484–1489
PREAMPLIFIER **
8 um
150 nm
Probe 1 Probe 2
Pad 1 Pad 2
10 5
10 Hz, which is conjectured to be due to the ion efflux from
the bacteria and possibly the Brownian motion of the 10 4
charged bacteria. Further investigation is ongoing to study
10 3
the nature of the observed 1/f 2 noise. Fig. 5 shows an
example of PSD plots corresponding to sensitive and resis- 10 2
tant bacteria that were incubated for 3 min and then mixed
with kS105 phages. 10 1
Note that other sources of electric field noise may also
exist, including temperature fluctuations, background ions, 10 0
Bipolar JFET JFETpreamp
etc. However, our experiment showed that these effects preamp preamp with thermal
were much weaker than the transitory ion leakage due to noise reduction
phage invasion. Therefore, our fluctuation-enhanced nano- Fig. 6. Projected sensitivities, based on the assumption of linear response
scale electric field detection system was successfully applied with the bacteriophage kUR. Figure is based on data extracted from [26].
in all our experiments. With some types of phages, the sensitivity limits are about 100 times lower.
S. Seo et al. / Microelectronic Engineering 85 (2008) 1484–1489 1489
100 times less [26]. The theoretical exploration on the in part by the US Army Medical Research and Material
detection sensitivity was detailed in Ref. [26]. Command Disaster Relief and Emergency Medical Ser-
vices program and by a Program of Excellence award (Pro-
4. Conclusion gram of Membrane Structure and Function) from the
TAMU Life Sciences Task Force to RY. The nano-well
During a phage infection process, the myophage or developments have been supported by funds from the Col-
siphophage injects its DNA into the host cell, resulting in lege of Engineering to MC.
a transitory, massive ion efflux. This phenomenon provides
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