Reimagine
Power
Conversion


TRANSPHORM
CONFIDENTIAL

 Introduction to Transphorm
•  Transphorm’s power modules eliminate up to 90% of electric
conversion losses (e.g. AC-DC, DC-AC, DC-DC power
conversion)
•  Electric conversion inefficiencies result in 100s of Terawatt-
hours (TWh) of lost energy
•  Transphorm is the first company to address energy efficiency
at a sub-system & platform level
•  Founded by proven entrepreneurs & technology pioneers
•  Partnered with leading global customers
•  Funded with $38M+ from premier energy investors
•  Voted one the ten best clean tech start-ups in 2011

Google Ventures

TRANSPHORM
CONFIDENTIAL
 2

 The Hidden Tax of Electricity

Other
 Wind/Solar

Hydro

CONVERSION
LOSSES
$40B
economic
cost

318
coal
power









plant‐equivalent

Nuclear

Coal


Nat.
Gas


U.S.
Electricity
Genera0on

The amount of energy we can save by eliminating conversion losses
is larger than all the energy generated from wind and solar 3

 Want Watts? Waste Not

SFO:

NYC:

6
TWh
 Vegas:

50
TWh

33
TWh


The West Coast consumes 270 TWh

Transphorm savings potential over 300TWh
TRANSPHORM
CONFIDENTIAL
 4

 Inside
a
Hybrid
Vehicle


Internal Combustion Engine

Active Battery
cooling for
electronics

Electrical power handling

 
GaN
in
Hybrid
Power
systems


•  Increased
Efficiency

•  Reduced
size
and
weight

•  EliminaQon
of
acQve
cooling




•  Less
dependence
on
inefficient

I.C.E.

•  Electronics
radiator
can
be

removed

•  ResulQng
in
greater
use
and

efficiency
of
electrical
drive

 Industrial Motor Drive Data Server Power Supply

230V AC 207TWh 230V AC 220V

52TWh 24V DC
AC
ENERGY ENERGY
IN OUT IN OUT
SAVINGS SAVINGS

Transphorm eliminates upto 90% of

power conversion losses


Solar Power Inverter

120V
48V DC 1.6TWh
AC
Solar Inverter Electric Motor Inverter
ENERGY
230V IN
202V OUT
650V
LOSS
48V DC 1.6TWh 1.3TWh
AC DC AC
ENERGY ENERGY
IN OUT IN OUT
SAVINGS TRANSPHORM
CONFIDENTIAL

SAVINGS
7

 Transphorm eliminates over 90% of the losses
in power conversion across major markets (C green + $ green)

$1.0B
 $1.1B

SAM
 SAM


Industrial
&
Building

 Data
Center

Mo1on
Control
 Power
Supplies


Solar
Power
Inverters
 HEV
/
EV
Inverters


$1.0B
 $0.4B

SAM
 SAM


TRANSPHORM
CONFIDENTIAL
 8

 Comparison of the materials properties of Si, SiC and GaN

Material
 Si
 SiC
 GaN


Bandgap
 1.1
 3.3
 3.4


(eV)



Breakdown
 0.3
 3
 3

Field
(MV/
cm)



Mobility
 700(bulk)
 700(bulk)
 2200

(cm2V‐1s‐1)
 100
 100

(inversion)
 (inversion)

S. Rajan
Moore’s Law for Energy Efficiency is a Relay Race with the
Baton handed off to better technologies: It is now
Transphorm-Gallium Nitride’s turn

Made
possible
by
Transphorm’s
low‐loss,
high‐frequency
GaN
operaQon



Industry
Power
Density
Roadmap


TRANSPHORM
CONFIDENTIAL
 10

 Breakdown
voltage
vs.
Lgd
spacing

(Linear
in
GaN,


sub‐linear
in
other
materials
or
higher
resistance)


2000 OFF-state IV curves

pulsed IV curves Trenchgates withF 20.0m
Drain Current (mA/mm)

1k 200ns 50ohmLL 1800 Trenchgates withoutF

200ns 165ohmLL 1600 Beforepassiv withF Vgs = -7V to -1V
800 dc 15.0m delVgs = +2V
1400 Vbr = (86.7 * Lgd) - 3.7

Current (A)
MaxVg = 1V
600 1200
del Vg= -1V 10.0m

Vbr (V)
1000
400 800
5.0m
600
200
400
0 200 0.0
0 400 800 1200 1600 2000
0 5 10 15 20 25 30 0 Voltage (V)
Drain Voltage (V) 0 5 10 15 20
Lgd (um)

At Transphorm with low

dispersion 600V for 18 microns

• Vbr increases linearly with Lgd.

• On-resistance is lowest from any semiconductor
 Transphorm delivers application-specific
power modules to customers

Motor
Drives


Power
Supplies


Gallium
Nitride

 Transistor
Fab
&

Technology
 Circuit
Design
 Modules

Solar
Inverters




• Vertical integration captures value and drives market

acceptance EV
Motor
Inverters

• Can respond to customers at the appropriate pain-point:
eliminates the duct tape approach to problem solving
• Critical IP across the full value chain helps create a profitable
business
TRANSPHORM
CONFIDENTIAL

The Device Team for Your Next Generation PFC

+ L1 +
D1
D
G
VIN C1 VOUT
S
Q1

•  Fastest switching 600 V transistor

•  Teamed with the lowest loss Gallium Nitride diode
•  Typical performance: 200 V to 400 V, 300 watt, 100 kHz,
boost converter efficiency = 99.2%

13

Proprietary and Confidential Information
 EZ-GaNTM achieves 99% efficiency in dc boost

Efficiency
(%)

Loss
(W)

+ L1 +
D1 Pout
(W)

D
G
VIN C1 VOUT
200
V
dc
 Q1
S
400
V
dc


Proprietary and Confidential Information

 Keys
to
the
sustained
viability
of
a

new
semiconductor
technology


•  The
technology
offers
soluQons
that
cannot
be
provided
by
Si
now
and

hopefully
not
in
the
next
decade;
beber
yet
never
(example
direct

bandgap
applicaQons;
LighQng,
opQcal
storage)


•  The
breadth
of
applicability
is
large
enabling
economies
of
scale
in
all

segments
of
the
value
chain;
materials,
process,
applicaQons
(LighQng,

Power
Electronics,
Microwave
Power
Transmibers,
Sensors
etc)


•  Should
not
be
too
disrupQve
(so
that
people
know
how
to
use
it)


•  Luck




 







 Gallium
Nitride



 




 Industry-proven team brings together technical, market,
manufacturing & business experience
World’s
largest
concentraQon
of
GaN
power
device
experQse;
Commercial
GaN
innovators
behind

Nitres




60+
 14
 200+
 100+


Employees Ph.D.s Publications Years experience

Umesh Mishra, Ph.D. - CEO, Co-Founder
•  Founder, Nitres (1st GaN startup, acquired by
Cree)
•  National Academy of Engineering
•  Internationally recognized GaN expert, 20+ years
Primit Parikh, Ph.D. – President, Co-Founder
•  Business area, P&L and technical GaN leadership at
Nitres (1st GaN startup) and Cree
•  12+ years GaN and entrepreneurial experience
•  IP and technical marketing experience

Carl Blake - VP Marketing Jim Hartman - VP Manufacturing, Wafer Fab

•  30+ years senior marketing and sales •  20+ years semiconductor manufacturing
(International Rectifier) •  Process, Equipment, Manufacturing,
•  Power supply, business management experience International Rectifier, OMM, Atomate
•  B.S. electrical engineering •  B.S., MBA

Yifeng Wu, Ph.D. – VP Product Development Heber Clement - VP Manufacturing, Backend

•  15+ years experience in GaN devices, •  30+ years semiconductor assembly, packaging
circuits, reliability at Nitres, Cree and operations manufacturing
•  World-leading developments including 1st •  Cypress, Dallas Semiconductor, CMD
GaN RF device
 LED historical development
US$ 7B market and growing
185 lm/W CREE Dec 2009
U
100
Luminous Efficiency (lm/W)

AlInGaP/GaP
Fluorescent (red, orange, yellow)
Compact Fluorescent AlInGaP/GaP
(red, orange)
Incandescent bulb AlGaAs/GaAs
10 (red)
GaAsP:N
(red, yellow) InGaN
(green) 150 lm/W
InGaN with 3.6V DC
168 lm/W pulsed
(blue)
Thomas Edison’s CCT 4002K by UCSB
first bulb
1 GaP,Zn:O
InGaN
(blue)
SiC
(blue)
GaAsP

0.1
1965 1970 1975 1980 1985 1990 1995 2000 2005 2010
Time (years)
 Spinning‐out
companies
out
of


UC
Santa
Barbara

•  We
are
in
GaN
valley
(the
new
Silicon
Valley)

•  The
philosophy
of
doing
some
things
right
and
not

everything
average
is
the
key
to
effecQve
spin‐offs.

The
market
is
brutal
and
does
not
treat
amateurs

kindly

•  
SupporQve
administraQon
and
the
Technology

Transfer
Office

•  Research
at
UCSB
funded
primarily
by
the
ONR
over

the
past
15
years
(+DARPA,
AFOSR)

•  Transphorm
licensed
technology
from
UC
Santa

Barbara
when
it
was
founded
in
2007

Reimagine
Power
Conversion


TRANSPHORM
CONFIDENTIAL