SB120-SB1100

SB120 - SB1100

Features
• 1.0 ampere operation at TA = 75°C
with no thermal runaway.
• For use in low voltage, high frequency
inverters free wheeling, and polarity
protection applications.
DO-41
COLOR BAND DENOTES CATHODE

Schottky Rectifiers
Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

120 130 140 150 160 180 1100
VRRM Maximum Repetitive Reverse Voltage 20 30 40 50 60 80 100 V
IF(AV) Average Rectified Forward Current 1.0 A
.375 " lead length @ TA = 75°C
IFSM Non-repetitive Peak Forward Surge Current
30 A
8.3 ms Single Half-Sine-Wave
Tstg Storage Temperature Range -65 to +125 °C
TJ Operating Junction Temperature -65 to +125 °C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics
Symbol Parameter Value Units
PD Power Dissipation 1.25 W
RθJA Thermal Resistance, Junction to Ambient 80 °C/W

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Device Units

120 130 140 150 160 180 1100
VF Forward Voltage @ 1.0 A 500 700 850 mV
IR Reverse Current @ rated VR TA = 25°C 0.5 mA
TA = 100°C 10 mA
Irr Maximum Full Load Reverse Current, Full Cycle 30 mA
TA = 75°C
Total Capacitance 110 pF
CT
VR = 4.0 V, f = 1.0 MHz

2001 Fairchild Semiconductor Corporation SB120-SB1100, Rev. C

 SB120-SB1100
Schottky Rectifier
(continued)

Typical Characteristics
Average Rectified Forward Current, IF [A]

1 20

10 SB120

Forward Current, IF [A]

0.75
SB1100
SINGLE PHASE
0.5 HALF WAVE
60Hz SB150-SB160
RESISTIVE OR 1
INDUCTIVE LOAD
0.25 .375" 9.5mm
LEAD LENGTHS T J = 25ºC
µS
Pulse Width = 300µ
1% Duty Cycle
0
0 20 40 60 80 100 120 140 0.1
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Lead Temperature [ºC]
Forward Voltage, VF [V]
Figure 1. Forward Current Derating Curve Figure 2. Forward Voltage Characteristics

30 400
Peak Forward Surge Current, IFSM [A]

Total Capacitance, C T [pF]

24 200
T J = 25ºC

18 100
80
60
12 40

6 20

0 10
1 2 4 6 8 10 20 40 60 100 0.1 0.5 1 5 10 40 60 100
Number of Cycles at 60Hz Reverse Voltage, VR [V]

Figure 3. Non-Repetitive Surge Current Figure 4. Total Capacitance

2001 Fairchild Semiconductor Corporation SB120-SB1100, Rev. C

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™ FAST  OPTOLOGIC™ SMART START™ VCX™
Bottomless™ FASTr™ OPTOPLANAR™ STAR*POWER™
CoolFET™ FRFET™ PACMAN™ Stealth™
CROSSVOLT™ GlobalOptoisolator™ POP™ SuperSOT™-3
DenseTrench™ GTO™ Power247™ SuperSOT™-6
DOME™ HiSeC™ PowerTrench  SuperSOT™-8
EcoSPARK™ ISOPLANAR™ QFET™ SyncFET™
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EnSignaTM MicroFET™ QT Optoelectronics™ TruTranslation™
FACT™ MicroPak™ Quiet Series™ UHC™
FACT Quiet Series™ MICROWIRE™ SILENT SWITCHER  UltraFET 
STAR*POWER is used under license
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failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H4
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